Datasheet MBR160 Datasheet (Motorola)

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SEMICONDUCTOR TECHNICAL DATA

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by MBR150/D

  

. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.

• Low Reverse Current

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are

Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case

• Shipped in plastic bags, 1000 per bag

• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suf fix to the

part number

• Polarity: Cathode Indicated by Polarity Band

• Marking: B150, B160

MAXIMUM RATINGS

Rating Symbol MBR150 MBR160 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage
RMS Reverse Voltage V
Average Rectified Forward Current (2)

(V

R(equiv)

see Note 3, TA = 55°C)
Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C)
Operating and Storage Junction Temperature Range (Reverse Voltage applied) TJ, T
Peak Operating Junction Temperature (Forward Current applied) T

THERMAL CHARACTERISTICS (Notes 3 and 4)

Thermal Resistance, Junction to Ambient R

ELECTRICAL CHARACTERISTICS (T

Maximum Instantaneous Forward Voltage (1)

(iF = 0.1 A)

(iF = 1 A)

(iF = 3 A)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)

(TL = 25°C)

(TL = 100°C)

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.

v 0.2 VR(dc), TL = 90°C, R

Characteristic Symbol Max Unit

Characteristic Symbol Max Unit

= 80°C/W, P.C. Board Mounting,

θJA

= 25°C unless otherwise noted) (2)

L

V

RRM

V

RWM

V

R

R(RMS)

I

O

I

FSM

stg

J(pk)

θJA

v

F

i

R




MBR160 is a

Motorola Preferred Device

SCHOTTKY BARRIER

RECTIFIERS

1 AMPERE

50, 60 VOL TS

CASE 59–04

PLASTIC

50 60 Volts

35 42 Volts

1 Amp

25 (for one cycle) Amps

*

65 to +150 °C

150 °C

80 °C/W

0.550

0.750

1.000

0.5
5

Volt

mA

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 1

Rectifier Device Data

 Motorola, Inc. 1996

1

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10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

TJ = 150°C

100°C

25°C

10

5.0

2.0

1.0

0.5

0.2

TJ = 150°C

125°C

100°C

75°C

0.1

0.05

0.02

0.01

, REVERSE CURRENT (mA)

R

I

0.005

25°C

0.002

0.001
50 6010 20 30

40 700

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. T ypical Reverse Current*

*The curves shown are typical for the highest voltage device in the volt­age grouping. Typical reverse current for lower voltage selections can
be estimated from these same curves if VR is sufficiently below rated VR.

5.0

0.1

, INSTANTANEOUS FORWARD CURRENT (AMPS)

F

i

4.0

0.07

, AVERAGE FORW ARD

F(AV)

P

3.0

2.0

1.0

POWER DISSIPATION (WATTS)

0

p

5

10

IPK/IAV = 20

1.00

I

, AVERAGE FORW ARD CURRENT (AMPS)

F(AV )

2.0

3.0 4.0 5.0

Figure 3. Forward Power Dissipation

0.05

0.03

0.02

0

0.60.2 0.4 0.8 1.0

1.2

1.4

1.6

vF, INSTANTANEOUS VOLTAGE (VOLTS)

Figure 1. T ypical Forward Voltage

THERMAL CHARACTERISTICS

1.0

0.7

0.5

0.3

0.2

0.1

0.07

(NORMALIZED)

0.05

0.03

0.02

r(t), TRANSIENT THERMAL RESIST ANCE

0.01

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k
t, TIME (ms)

Figure 4. Thermal Response

Z

= Z

θ

JL

P

pk

t

1

[D + (1 – D)

θ

JL

• r(t)

•

P

pk

DUTY CYCLE, D = tp/t
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.

TIME

r(t1 + tp) + r(tp) – r(t1)]

θ

JL(t)

t

p

∆

TJL = Ppk • R

where

∆

TJL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, from Figure 4, i.e.:

r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t

1

+ tp.

1

SQUARE

WAVE

dc

2

Rectifier Device Data

90

g

R

80
70

°

60
50
40

, THERMAL RESISTANCE,

30

JL

q

JUNCTION–TO–LEAD ( C/W)

R

20
10

Figure 5. Steady–State Thermal Resistance Figure 6. T ypical Capacitance

200

BOTH LEADS TO HEA T SINK,

EQUAL LENGTH

100

C, CAPACITANCE (pF)

80
70

60
50

40

30

20

MAXIMUM

TYPICAL

3/81/8 1/4 1/2 5/8 7/8 1.0 60 7010 20 30 40

L, LEAD LENGTH (INCHES)

3/40

 

TJ = 25°C
f = 1 MHz

50 800

VR, REVERSE VOLTAGE (VOLTS)

10090

NOTE 3 — MOUNTING DATA:

Data shown for thermal resistance junction–to–ambient

(R

for the mounting shown is to be used as a typical

θJA)

guideline values for preliminary engineering or in case the tie
point temperature cannot be measured.

T ypical Values for R

Mounting

Method

1 52 65 72 85 °C/W
2 67 80 87 100 °C/W
3 — 50 °C/W

Lead Length, L (in)

1/8 1/4 1/2 3/4

in Still Air

θJA

θJA

NOTE 4 — THERMAL CIRCUIT MODEL:

(For heat conduction through the leads)

T

C(K)

R

θ

L(K)Rθ

T

L(K)

T

S(K)

A(K)

R

θ

S(A)Rθ

T

A(A)

T

L(A)

L(A)Rθ

T

C(A)TJ

J(A)

R

P

θJ(K)

D

Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For a
given total lead length, lowest values occur when one side of
the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:

TA = Ambient Temperature TC = Case Temperature
TL = Lead Temperature TJ = Junction Temperature
RθS = Thermal Resistance, Heat Sink to Ambient
RθL = Thermal Resistance, Lead to Heat Sink
RθJ = Thermal Resistance, Junction to Case
PD = Power Dissipation

Mounting Method 1

P.C. Board with
1–1/2″ x 1–1/2″
copper surface.

LL

Mounting Method 2

LL

VECTOR PIN MOUNTING

Mounting Method 3

P.C. Board with
1–1/2″ x 1–1/2″
copper surface.

L = 3/8

″

BOARD GROUND

PLANE

(Subscripts A and K refer to anode and cathode sides,
respectively.) Values for thermal resistance components are:
RθL = 100°C/W/in typically and 120°C/W/in maximum.
RθJ = 36°C/W typically and 46°C/W maximum.

NOTE 5 — HIGH FREQUENCY OPERATION:

Since current flow in a Schottky rectifier is the result of ma­jority carrier conduction, it is not subject to junction diode for­ward and reverse recovery transients due to minority carrier
injection and stored charge. Satisfactory circuit analysis work
may be performed by using a model consisting of an ideal
diode in parallel with a variable capacitance. (See Figure 6.)

Rectification efficiency measurements show that operation
will be satisfactory up to several megahertz. For example,
relative waveform rectification efficiency is approximately 70
percent at 2 MHz, e.g., the ratio of dc power to RMS power in
the load is 0.28 at this frequency, whereas perfect rectifica­tion would yield 0.406 for sine wave inputs. However, in con­trast to ordinary junction diodes, the loss in waveform effi­ciency is not indicative of power loss: it is simply a result of
reverse current flow through the diode capacitance, which
lowers the dc output voltage.

Rectifier Device Data

3

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P ACKAGE DIMENSIONS

B

K

D

A

NOTES:

1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO–41 OUTLINE SHALL APPLY.

2. POLARITY DENOTED BY CATHODE BAND.

3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.

DIM MIN MAX MIN MAX

A 5.97 6.60 0.235 0.260
B 2.79 3.05 0.110 0.120
D 0.76 0.86 0.030 0.034
K 27.94 ––– 1.100 –––

INCHESMILLIMETERS

K

CASE 59–04

ISSUE M

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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Rectifier Device Data

MBR150/D