Datasheet mb2623 DATASHEETS (Philips)

INTEGRATED CIRCUITS

MB2623

16-bit transceiver with dual enable, non-inverting (3-State)

Product specification Supersedes data of 1993 Aug 24 IC23 Data Handbook

 

1998 Jan 16

Philips Semiconductors Product specification

È È

16-bit transceiver with dual enable, non-inverting (3-State)

FEA TURES

•Two 8-bit bidirectional bus interfaces

•3-State buffers

•Power-up 3-State

•Multiple V

and GND pins minimize switching noise

CC

•Output capability: +64mA/–32mA

•Latch-up protection exceeds 500mA per Jedec Std 17

•ESD protection exceeds 2000 V per MIL STD 883 Method 3015

and 200 V per Machine Model

•Inputs are disabled during 3-State mode

QUICK REFERENCE DATA

SYMBOL PARAMETER

t

PLH

t

PHL

C C I

CCZ

IN

I/O

Propagation delay nAx to nBx, or nBx to nAx

Input capacitance VI = 0V or V I/O capacitance VO = 0V or VCC; 3-State 7 pF Total supply current Outputs disabled; VCC =5.5V 50 µA

CL = 50pF; VCC = 5V

DESCRIPTION

The MB2623 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

The MB2623 is a 16-bit transceiver featuring non-inverting 3-State bus compatible outputs in both send and receive directions. The MB2623 is designed for asynchronous two-way communication between data buses.

The control function implementation allows for maximum flexibility in timing. This device allows data transmission from the A bus to the B bus or from the B bus to the A bus, depending upon the logic levels at the Enable inputs (nOEBA be used to disable the device so that the buses are effectively isolated.

CONDITIONS

T

= 25°C; GND = 0V

amb

CC

MB2623

and nOEAB). The Enable inputs can

TYPICAL UNIT

3.2

3.1 4 pF

ns

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER

52–pin plastic Quad Flat Pack –40°C to +85°C MB2623 BB MB2623 BB SOT379-1

LOGIC SYMBOL

1B3

1B2

GND

1B1

1B0

1OEAB

GND

1OEBA

1A0

1A1

GND

1A2

47 4446 434950 41 40425152 4548

1

V

CC

1B4

2

1B5

3

GND

4

1B6

5

1B7

GND

2B0 2B1

GND

2B2 2B3

V

CC

6 7 8

9

10

11 12 13

52-pin PQFP

19 2220 231716 25 262A51514 2118

1A3

39

V

CC

1A4

38

1A5

37

GND

36

1A6

35

1A7

34

GND

33

2A0

32 31

2A1

30

GND

29

2A2

28

2A3

27

V

CC

PIN DESCRIPTION

PIN NUMBER SYMBOL FUNCTION

44, 43, 41, 40, 38, 37, 35, 34, 32, 31, 29, 28,

26, 25, 23, 22

48, 49, 51, 52,

2, 3, 5, 6,

8, 9, 11, 12,

14, 15, 17, 18

47, 19 1OEAB, 2OEAB

45, 21 1OEBA, 2OEBA

4, 7, 10, 16,

20, 24, 30, 33,

36, 42, 46, 50

1, 13, 27, 39 V

1A0 – 1A7 2A0 – 2A7

1B0 – 1B7 2B0 – 2B7

Data inputs/outputs (A side)

Data inputs/outputs (B side)

Output enable inputs (active-High)

Output enable inputs (active-Low)

GND Ground (0V)

CC

Positive supply voltage

2B4

2B5

2B6

2B7

GND

2OEBA

1998 Jan 16 853–1575 18869

GND

2OEBA

2A7

2A6

GND

2A5

2A4

SB00104

2

Philips Semiconductors Product specification

16-bit transceiver with dual enable, non-inverting (3-State)

FUNCTION TABLE

INPUTS OUTPUTS

nOEBA nOEAB nAx nBx

L L A = B Inputs H H Inputs B = A H L Z Z

L H A = B B = A

H = High voltage level L = Low voltage level Z = High impedance “off” state

PIN CONFIGURATION

1OEAB

1A0

1A1

1A2

1A3

1A4

1A5

1A6

1A7

MB2623

47

44

43

41

40

38

37

35

34

45

48

49

51

52

2

3

5

6

1OEBA

1B0

1B1

1B2

1B3

1B4

1B5

1B6

1B7

2OEAB

2A0

2A1

2A2

2A3

2A4

2A5

2A6

2A7

19

32

31

29

28

26

25

23

22

21

8

9

11

12

14

15

17

18

2OEBA

2B0

2B1

2B2

2B3

2B4

2B5

2B6

2B7

LOGIC SYMBOL (IEEE/IEC)

47

45

44

43

41

10

38

37

35

EN1

EN2

SB00105

19

21

1

2

48

32

49

31

51

29

52

28

2

26

3

25

5

23

6

2234

EN1

EN2

1

2

8

9

11

12

14

15

17

18

SB00106

1998 Jan 16

3

Philips Semiconductors Product specification

16-bit transceiver with dual enable, non-inverting

CC

MB2623

V

(3-State)

ABSOLUTE MAXIMUM RATINGS

SYMBOL

V

I

CC

I

IK

V

I

OK

OUT

T

stg

DC supply voltage –0.5 to +7.0 V DC input diode current VI < 0 –18 mA DC input voltage

I

DC output diode current VO < 0 –50 mA DC output voltage DC output current output in Low state 128 mA Storage temperature range –65 to 150 °C

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

PARAMETER CONDITIONS RATING UNIT

3

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNIT

V

CC

V

I

OH

I

OL

∆t/∆v Input transition rise or fall rate 0 10 ns/V

T

amb

DC supply voltage 4.5 5.5 V Input voltage 0 V

I

High-level input voltage 2.0 V

IH

Low-level Input voltage 0.8 V

IL

High-level output current –32 mA Low-level output current 64 mA

operating free-air temperature range –40 +85 °C

1, 2

–1.2 to +7.0 V

output in Off or High state –0.5 to +5.5 V

Min Max

1998 Jan 16

4

Philips Semiconductors Product specification

16-bit transceiver with dual enable, non-inverting (3-State)

DC ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER TEST CONDITIONS T

V

I

OFF

I

PU/IPD

IIH + I

IIL + I

I

CEX

I

CCH

I

CCL

I

CCZ

∆I

I

Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V

IK

VCC = 4.5V; IOH = –3mA; VI = VIL or V

High-level output voltage VCC = 5.0V; IOH = –3mA; VI = VIL or V

OH

VCC = 4.5V; IOH = –32mA; VI = VIL or V

Low-level output voltage VCC = 4.5V; IOL = 64mA; VI = VIL or V

OL

I

Input leakage Control pins VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA

I

IH

current Data pins VCC = 5.5V; VI = GND or 5.5V ±5 ±100 ±100 µA Power-off leakage current VCC = 0.0V; VO or VI ≤ 4.5V ±5.0 ±50 ±50 µA Power-up/down 3-State

output current 3-State output High current VCC = 5.5V; VO = 2.7V; VI = VIL or V

OZH

3-State output Low current VCC = 5.5V; VO = 0.5V; VI = VIL or V

OZL

Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V

O

Output current

1

Quiescent supply current VCC = 5.5V; Outputs Low, VI = GND or V

VCC = 2.0V; VO = 0.5V; VI = GND or VCC; VOE = VCC; VOE = GND

IH

CC

VCC = 5.5V; VO = 2.5V –50 –100 –180 –50 –180 mA VCC = 5.5V; Outputs High, VI = GND or V

CC

VCC = 5.5V; Outputs 3-State; V

= GND or V

Additional supply current per

CC

input pin

2

I

VCC = 5.5V; one input at 3.4V, other inputs at VCC or GND

CC

MB2623

LIMITS

T

= –40°C

= +25°C

amb

Min Typ Max Min Max

2.5 2.9 2.5 V

3.0 3.4 3.0 V

2.0 2.4 2.0 V

0.42 0.55 0.55 V

±5.0 ±100 ±100 µA

5.0 50 50 µA

–5.0 –50 –50 µA

5.0 50 50 µA

50 100 100 µA 48 60 60 mA

50 100 100 µA

0.5 1.5 1.5 mA

amb

to +85°C

UNIT

NOTES:

1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.

2. This is the increase in supply current for each input at 3.4V.

AC CHARACTERISTICS

GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω

LIMITS

SYMBOL PARAMETER WAVEFORM

t t

PLH PHL

PZH PZL

PHZ PLZ

Propagation delay An to Bn or Bn to An

Output enable time to High and Low level

Output disable time from High and Low level

1

2

1998 Jan 16

T

= +25oC

amb

VCC = +5.0V

Min Typ Max Min Max

1.2

1.5

1.7

1.5

1.4

3.2

3.1

4.8

5.4

4.7

4.2

4.5

6.5

6.8

6.5

5.8

5

T

V

CC

1.2

1.5

1.7

1.5

1.4

= -40 to

amb

+85oC

= +5.0V ±0.5V

5.1

7.2

7.8

7.2

6.5

UNIT

ns

Philips Semiconductors Product specification

16-bit transceiver with dual enable, non-inverting (3-State)

AC WAVEFORMS

VM = 1.5V, VIN = GND to 3.0V

nOEBA

INPUT

OUTPUT

V

M

t

PHL

V

M

V

M

t

PLH

Waveform 1. Waveforms Showing the Input to Output

Propagation Delays

V

M

SB00044

nOEAB

INPUT

OUTPUT

Waveform 2. Waveforms Showing the 3-State Output Enable

V

M

t

PZL

V

t

PZH

V

and Disable Times

MB2623

V

M

t

PLZ

M

t

PHZ

M

3.5V

V

+ 0.3V

OL

V

OL

V

OH

V

OH

0V

SB00107

– 0.3V

TEST CIRCUIT AND WAVEFORM

V

CC

V

PULSE

GENERATOR

SWITCH POSITION

TEST SWITCH

t

PLZ

t

PZL

All other open

DEFINITIONS

= Load resistor; see AC CHARACTERISTICS for value.

R

L

C

= Load capacitance includes jig and probe capacitance; see AC

L

CHARACTERISTICS for value.

= Termination resistance should be equal to Z

R

T

IN

D.U.T.

R

T

Test Circuit for 3-State Outputs

closed closed

V

OUT

C

L

of pulse generators.

OUT

t

90%

7.0V NEGATIVE

R

L

R

L

PULSE

POSITIVE PULSE

10%

FAMILY

MB 3.0V 1MHz 500ns 2.5ns 2.5ns

V

M

10% 10%

t

THL

t

TLH

90% 90%

V

M

Amplitude Rep. Rate t

W

V

M

(tF)

(tR)t

V

M

t

W

= 1.5V

V

M

Input Pulse Definition

INPUT PULSE REQUIREMENTS

W

90%

10%

t

R

AMP (V)

0V

t

(tR)

TLH

(tF)

THL

AMP (V)

0V

t

F

1998 Jan 16

SB00010

6

Philips Semiconductors Product specification

16-bit transceiver with dual enable, non-inverting (3-State)

t

vs Temperature (T

PLH

= 50pF , 1 Output Switching

C

L

nAx to nBx

6

5

4

3

ns

2

1

0

–55 –35 –15 5 25 45 65 85 105 125

°C

t

vs Temperature (T

PHL

= 50pF , 1 Output Switching

C

L

nAx to nBx

7

6

5

4

ns

3

2

1

0

–55 –35 –15 5 25 45 65 85 105 125

°C

amb

)

4

MAX

4.5V

CC

5.5V

CC

MIN

)

MAX

4.5V

CC

5.5V

CC

MIN

3

2

1

Offset in ns

0

–1

–2

0 50 100 150 200

4

3

2

1

Offset in ns

0

–1

–2

0 50 100 150 200

Load Capacitance and # of Outputs Switching

Adjustment of t

nAx to nBx

Adjustment of t

nAx to nBx

for

PLH

pF

for

PHL

pF

MB2623

16 switching 8 switching 1 switching

t

vs Temperature (T

PZH

C

= 50pF , 1 Output Switching

L

nOEAB to nBx or nOEBA 9 8 7 6 5

ns

4 3 2 1 0

–55 –35 –15 5 25 45 65 85 105 125

°C

)

amb

to nAx

MAX

4.5V

5.5V

MIN

Load Capacitance and # of Outputs Switching

5

4

CC CC

3

2

1

Offset in ns

0

–1

–2

0 50 100 150 200

Adjustment of t

nOEAB to nBx or nOEBA

for

PZH

to nAx

16 switching 8 switching

1 switching

pF

SB00108

1998 Jan 16

7

Philips Semiconductors Product specification

16-bit transceiver with dual enable, non-inverting (3-State)

t

vs T emperature (T

PZL

= 50pF, 1 Output Switching

C

L

nOEAB to nBx or nOEBA

9 8 7 6 5

ns

4 3 2 1 0

–55 –35 –15 5 25 45 65 85 105 125

°C

t

vs T emperature (T

PHZ

= 50pF, 1 Output Switching

C

L

nOEAB to nBx or nOEBA

9 8 7 6 5

ns

4 3 2 1 0

–55 –35 –15 5 25 45 65 85 105 125

°C

)

amb

to nAx

)

amb

to nAx

MAX

4.5V

5.5V

MIN

MAX

4.5V

5.5V

MIN

4

CC CC

CC

3

2

1

Offset in ns

0

–1

–2

0 50 100 150 200

6 5 4 3 2

Offset in ns

1

0 –1 –2

0 50 100 150 200

Load Capacitance and # of Outputs Switching

Adjustment of t

nOEAB to nBx or nOEBA

Adjustment of t

nOEAB to nBx or nOEBA

for

PZL

to nAx

pF

for

PHZ

to nAx

pF

MB2623

16 switching 8 switching

1 switching

16 switching 8 switching 1 switching

t

vs T emperature (T

PLZ

C

= 50pF, 1 Output Switching

L

nOEAB to nBx or nOEBA

8 7 6 5 4

ns

3 2 1 0

–55 –35 –15 5 25 45 65 85 105 125

°C

)

amb

to nAx

MAX

4.5V

5.5V

MIN

Load Capacitance and # of Outputs Switching

6 5 4

CC

3 2

Offset in ns

1

0 –1 –2

0 50 100 150 200

Adjustment of t

nOEAB to nBx or nOEBA

for

PLZ

to nAx

16 switching 8 switching 1 switching

pF

SB00109

1998 Jan 16

8

Philips Semiconductors Product specification

16-bit transceiver with dual enable, non-inverting (3-State)

t

vs Temperature (T

TLH

= 50pF , 1 Output Switching

C

4

3

ns

2

1

–55 –35 –15 5 25 45 65 85 105 125

3.0

2.5

2.0

ns

1.5

1

–55 –35 –15 5 25 45 65 85 105 125

L

°C

t

vs Temperature (T

THL

= 50pF , 1 Output Switching

C

L

°C

amb

)

9 8 7 6

4.5V

CC

5.5V

CC

)

4.5V

CC

5.5V

CC

5 4 3 2

Offset in ns

1

0 –1 –2 –3

0 50 100 150 200

5

4

3

2

1

Offset in ns

0

–1

–2

0 50 100 150 200

Load Capacitance and # of Outputs Switching

Adjustment of t

for

TLH

pF

for

THL

pF

MB2623

16 switching 8 switching 1 switching

and V

V

OHV

4.0

3.5

3.0

2.5

2.0

1.5

volts

1.0

0.5

0.0

–0.5

–1

0 50 100 150 200

vs Load Capacitance

OLP

= 5V, VIN = 0 to 3V

V

CC

pF pF

125°C 25°C –55°C

V

and V

OHP

6

5

4

3

2

volts

1

0

–1

–2

0 50 100 150 200

vs Load Capacitance

OLV

= 5V, VIN = 0 to 3V

V

CC

125°C 25°C –55°C

SB00110

1998 Jan 16

9

Philips Semiconductors Product specification

16-bit transceiver with dual enable, non-inverting (3-State)

QFP52: plastic quad flat package; 52 leads (lead length 1.6 mm); body 10 x 10 x 2.0 mm SOT379-1

MB2623

1998 Jan 16

10

Philips Semiconductors Product specification

16-bit transceiver with dual enable, non-inverting (3-State)

NOTES

MB2623

1998 Jan 16

11

Philips Semiconductors Product specification

16-bit transceiver with dual enable, non-inverting (3-State)

Data sheet status

Objective specification

Preliminary specification

Product specification

Product status

Development

Qualification

Production

Definition

This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product.

This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

[1]

MB2623

[1] Please consult the most recently issued datasheet before initiating or completing a design.

Definitions

Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Disclaimers

Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can

reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381

 Copyright Philips Electronics North America Corporation 1998

print code Date of release: 05-96 Document order number: 9397-750-03513

 

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