Datasheet MB2541BB Datasheet (Philips)

INTEGRATED CIRCUITS

MB2541

Dual octal buffer line driver (3-State)

Product specification
Supersedes data of 1993 Aug 18
IC23 Data Handbook

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1998 Jan 16

Philips Semiconductors Product specification

MB254116-bit buffer/line drivers (3-State)

FEA TURES

•Two 8-bit bus interfaces

•Power-up 3-State

•Multiple V

and GND pins minimize switching noise

CC

•Provides ideal interface and increases fan-out of MOS

Microprocessors

•3-State buffers sink 64mA and source 32mA

•Latch-up protection exceeds 500mA per Jedec Std 17

•ESD protection exceeds 2000 V per MIL STD 883 Method 3015

and 200 V per Machine Model

•Inputs are disabled during 3-State mode

QUICK REFERENCE DATA

SYMBOL PARAMETER

C

t

PLH

t

PHL

C

OUT

I

CCZ

IN

Propagation delay
nIx to nYx

CL = 50pF; VCC = 5V

Input capacitance VI = 0V or V
Output capacitance VO = 0V or VCC; 3-State 7 pF
Total supply current Outputs disabled; VCC =5.5V 65 µA

DESCRIPTION

The MB2541 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.

The MB2541 has two 8-bit buffers that are ideal for driving bus lines.
The outputs are all capable of sinking 64mA and sourcing 32mA.

CONDITIONS

T

= 25°C; GND = 0V

amb

CC

TYPICAL UNIT

3.0

3.1
4 pF

ns

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER

52–pin plastic Quad Flat Pack –40°C to +85°C MB2541 BB MB2541 BB SOT379-1

PIN CONFIGURATION

1Y3

1Y2

GND

1Y1

1

V

CC

2

1Y4
1Y5

3

GND

4

1Y6

5

1Y7

6

GND

7

2Y0

8

2Y1

9

GND

10

2Y2

11

2Y3

12
13

V

CC

2Y4

2Y5

2Y6

GND

1Y0

1OE0

GND

47 4446 434950 41 40425152 4548

52–pin PQFP

19 2220 231716 25 26241514 2118

2Y7

2OE0

GND

1OE1

2OE1

1A0

2A7

1A1

2A6

GND

GND

1A2

2A5

1A3

39
38
37
36

35
34
33
32
31
30
29
28

27

2A4

V

CC

1A4
1A5
GND
1A6
1A7
GND
2A0
2A1
GND
2A2
2A3
V

CC

SB00082

PIN DESCRIPTION

PIN NUMBER SYMBOL NAME AND FUNCTION

44, 43, 41, 40,
38, 37, 35, 34,
32, 31, 29, 28,

26, 25, 23, 22

48, 49, 51, 52,

2, 3, 5, 6,

8, 9, 11, 12,

14, 15, 17, 18

47, 45, 19, 21

4, 7, 10, 16,

20, 24, 30, 33,

36, 42, 46, 50

1, 13, 27, 39 V

1A0 – 1A7
2A0 – 2A7

1Y0 – 1Y7,

2Y0 – 2Y7

1OE0, 1OE1,

2OE0, 2OE1

Data inputs

Data outputs

Output enables

GND Ground (0V)

CC

Positive supply voltage

1998 Jan 16 853–1574 18869

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Philips Semiconductors Product specification

MB254116-bit buffer/line drivers (3-State)

LOGIC SYMBOL

47

0

1OE

45

1

1OE

1A0

1A1

1A2

1A3

1A4

1A5

1A6

1A7

44

43

41

40

38

37

35

34

48

1Y0

49

1Y1

51

1Y2

52

1Y3

2

1Y4

3

1Y5

5

1Y6

6

1Y7

FUNCTION TABLE

INPUTS OUTPUTS

nOE0 nOE1 nIx nYx

L L L L

L L H H
X H X Z
H X X Z

2OE

2OE

0

1

2A0

2A1

2A2

2A3

2A4

2A5

2A6

2A7

LOGIC SYMBOL (IEEE/IEC)

19

21

32

31

29

28

26

25

23

22

8

2Y0

9

2Y1

11

2Y2

12

2Y3

14

2Y4

15

2Y5

17

2Y6

18

2Y7

SB00083

47
45

44
43
41
40
38
37
35
34

&

EN

48
49
51
52

19

&

21

32
31
29
28
26

2

25

3

23

5

22

6

EN

8

9
11
12
14
15
17
18

SB00084

ABSOLUTE MAXIMUM RA TINGS

SYMBOL

V

CC

I

IK

V

I

I

OK

V

OUT

I

OUT

T

stg

DC supply voltage –0.5 to +7.0 V
DC input diode current VI < 0 –18 mA
DC input voltage
DC output diode current VO < 0 –50 mA
DC output voltage
DC output current output in Low state 128 mA
Storage temperature range –65 to 150 °C

PARAMETER CONDITIONS RATING UNIT

3

3

1, 2

–1.2 to +7.0 V

output in Off or High state –0.5 to +5.5 V

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

1998 Jan 16

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Philips Semiconductors Product specification

MB254116-bit buffer/line drivers (3-State)

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNIT

Min Max

V

CC

V
V
V
I

OH

I

OL

∆t/∆v Input transition rise or fall rate 0 10 ns/V

T

amb

DC ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER TEST CONDITIONS T

V

IK

V

OH

V

OL

I

I

OFF

IPU/I

I

OZH

I

OZL

I

CEX

I

O

I

CCH

I

CCL

I

CCZ

∆I

CC

NOTES:

1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.

2. This is the increase in supply current for each input at 3.4V.

DC supply voltage 4.5 5.5 V
Input voltage 0 V

I

High-level input voltage 2.0 V

IH

Low-level Input voltage 0.8 V

IL

CC

High-level output current –32 mA
Low-level output current 64 mA

Operating free-air temperature range –40 +85 °C

LIMITS

T

amb

= +25°C

amb

to +85°C

Min Typ Max Min Max

Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V

VCC = 4.5V; IOH = –3mA; VI = VIL or V

High-level output voltage VCC = 5.0V; IOH = –3mA; VI = VIL or V

VCC = 4.5V; IOH = –32mA; VI = VIL or V
Low-level output voltage VCC = 4.5V; IOL = 64mA; VI = VIL or V
Input leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA

I

IH

IH

IH

IH

2.5 2.9 2.5 V

3.0 3.4 3.0 V

2.0 2.4 2.0 V

0.42 0.55 0.55 V

Power-off leakage current VCC = 0.0V; VO or VI ≤ 4.5V ±5.0 ±100 ±100 µA
Power-up/down 3-State

PD

output current
3-State output High current VCC = 5.5V; VO = 2.7V; VI = VIL or V
3-State output Low current VCC = 5.5V; VO = 0.5V; VI = VIL or V
Output high leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V
Output current

1

Quiescent supply current VCC = 5.5V; Outputs Low, VI = GND or V

Additional supply current per
input pin

2

VCC = 2.0V; VO = 0.5V; VI = GND or VCC;

VOE = V

CC

IH

IH

CC

±5.0 ±50 ±50 µA

5.0 50 50 µA

–5.0 –50 –50 µA

5.0 50 50 µA
VCC = 5.5V; VO = 2.5V –50 –70 –180 –50 –180 mA
VCC = 5.5V; Outputs High, VI = GND or V

VCC = 5.5V; Outputs 3-State;
VI = GND or V

CC

Outputs enabled, one input at 3.4V , other
inputs at VCC or GND; VCC = 5.5V

CC

CC

65 250 250 µA
48 60 60 mA

65 250 250 µA

0.5 1.5 1.5 mA

= –40°C

V

UNIT

1998 Jan 16

4

Philips Semiconductors Product specification

MB254116-bit buffer/line drivers (3-State)

AC CHARACTERISTICS

GND = 0V; tR = tF = 2.5ns; CL = 50pF, RL = 500Ω

LIMITS

T

SYMBOL PARAMETER WAVEFORM

t

PLH

t

PHL

t

PZH

t

PZL

t

PHZ

t

PLZ

Propagation delay
nIx to nYx

Output enable time
to High and Low level

Output disable time
from High and Low level

1

2

2

AC WAVEFORMS

VM = 1.5V, VIN = GND to 3.0V

= +25°C

amb

VCC = +5.0V

Min Typ Max Min Max

1.2

1.2

1.3

2.1

1.8

1.7

3.0

3.1

3.6

4.7

4.3

4.0

4.5

4.5

5.2

6.1

6.2

5.4

T

= –40°C to +85°C

amb

VCC = +5.0V ±0.5V

1.2

1.2

1.3

2.1

1.8

1.7

5.1

5.1

5.8

7.1

6.8

5.9

UNIT

ns

ns

ns

nIx INPUT

nYx OUTPUT

V

M

t

PLH

V

M

V

M

t

PHL

V

M

SB00085

Waveform 1. W aveforms Showing the Input (An) to Output (Yn)

Propagation Delays

nOEn INPUT

nYx OUTPUT

nYx OUTPUT

V

M

t

PZL

V

M

t

PZH

V

M

V

M

t

PLZ

t

PHZ

3.5V

V

OL

V

OL

V

OH

V

OH

0V

SB00086

+ 0.3V

– 0.3V

Waveform 2. Waveforms Showing the 3-State Output Enable

and Disable Times

1998 Jan 16

5

Philips Semiconductors Product specification

MB254116-bit buffer/line drivers (3-State)

TEST CIRCUIT AND WAVEFORMS

V

CC

V

OUT

C

L

PULSE

GENERATOR

V

IN

D.U.T.

R

T

Test Circuit for 3-State Outputs

SWITCH POSITION

TEST SWITCH

t

PLZ

t

PZL

closed
closed

All other open

DEFINITIONS

= Load resistor; see AC CHARACTERISTICS for value.

R

L

C

= Load capacitance includes jig and probe capacitance; see AC

L

CHARACTERISTICS for value.

= Termination resistance should be equal to Z

R

T

of pulse generators.

OUT

t

90%

7.0V
NEGATIVE

R

L

PULSE

V

M

10% 10%

t

R

L

POSITIVE
PULSE

t

90% 90%

V

M

10%

W

V

M

(tF)

THL

(tR)t

TLH

V

M

t

W

= 1.5V

V

M

Input Pulse Definition

90%

10%

AMP (V)

0V

t

(tR)

TLH

(tF)

THL

AMP (V)

0V

INPUT PULSE REQUIREMENTS

FAMILY

Amplitude Rep. Rate t

t

W

t

R

F

MB 3.0V 1MHz 500ns 2.5ns 2.5ns

SB00010

1998 Jan 16

6

Philips Semiconductors Product specification

MB254116-bit buffer/line drivers (3-State)

t

vs T emperature (T

PLH

= 50pF, 1 Output Switching

C

L

nIx to nYx

6

amb

)

Load Capacitance and # of Outputs Switching

Adjustment of t

nIx to nYx

PLH

for

4

5

4

3

ns

2

1

0

–55 –35 –15 5 25 45 65 85 105 125

°C

t

vs T emperature (T

PHL

= 50pF, 1 Output Switching

C

L

nIx to nYx

amb

)

7

6

5

4

ns

3

2

1

0

–55 –35 –15 5 25 45 65 85 105 125

°C

MAn

4.5V

5.5V

MIN

MAn

4.5V

5.5V

MIN

3

CC
CC

2

1

Offset in ns

0

16 switching
8 switching
1 switching

–1

–2

0 50 100 150 200

pF

Load Capacitance and # of Outputs Switching

Adjustment of t

nIx to nYx

PHL

for

4

3

2

CC
CC

1

Offset in ns

0

16 switching
8 switching
1 switching

–1

–2

0 50 100 150 200

pF

t

vs T emperature (T

PZH

C

= 50pF, 1 Output Switching

L

nOE

n to nYx

amb

)

7

6

5

4

ns

3

2

1

0

–55 –35 –15 5 25 45 65 85 105 125

°C

MAn

4.5V

5.5V

MIN

Load Capacitance and # of Outputs Switching

Adjustment of t

nOE

n to nYx

PZH

for

5

4

3

CC

CC

2

1

Offset in ns

16 switching
8 switching

1 switching

0

–1

–2

0 50 100 150 200

pF

SB00087

1998 Jan 16

7

Philips Semiconductors Product specification

MB254116-bit buffer/line drivers (3-State)

t

vs T emperature (T

PZL

= 50pF, 1 Output Switching

C

L

nOE

n to nYx

8

7

6

5

ns

4

3

2

1

–55 –35 –15 5 25 45 65 85 105 125

°C

t

vs T emperature (T

PHZ

= 50pF, 1 Output Switching

C

L

nOE

n to nYx

8
7
6
5
4

ns

3
2
1
0

–55 –35 –15 5 25 45 65 85 105 125

°C

amb

amb

)

Load Capacitance and # of Outputs Switching

Adjustment of t

n to nYx

nOE

PZL

for

4

MAn

4.5V

5.5V

3

CC

CC

2

1

Offset in ns

0

16 switching
8 switching

1 switching

MIN

–1

–2

0 50 100 150 200

pF

)

Load Capacitance and # of Outputs Switching

Adjustment of t

n to nYx

nOE

PHZ

for

6

MAn

4.5V

5.5V

MIN

5
4

CC
CC

3
2

Offset in ns

1
0

16 switching
8 switching
1 switching

–1
–2

0 50 100 150 200

pF

t

vs T emperature (T

PLZ

C

= 50pF, 1 Output Switching

L

nOE

n to nYx

amb

)

7

6

5

4

ns

3

2

1

0

–55 –35 –15 5 25 45 65 85 105 125

°C

MAn

4.5V

5.5V

MIN

n to nYx

PLZ

for

Load Capacitance and # of Outputs Switching

Adjustment of t

nOE

6
5
4

CC
CC

3

16 switching
8 switching
1 switching

2

Offset in ns

1

0
–1
–2

0 50 100 150 200

pF

SB00088

1998 Jan 16

8

Philips Semiconductors Product specification

MB254116-bit buffer/line drivers (3-State)

t

vs T emperature (T

TLH

= 50pF, 1 Output Switching

C

L

4

3

ns

2

1

–55 –35 –15 5 25 45 65 85 105 125

°C

t

vs T emperature (T

THL

= 50pF, 1 Output Switching

C

L

3.0

2.5

2.0

ns

1.5

1

–55 –35 –15 5 25 45 65 85 105 125

°C

amb

amb

)

Load Capacitance and # of Outputs Switching

Adjustment of t

TLH

for

9

4.5V

5.5V

8
7
6

CC
CC

5
4
3
2

Offset in ns

1

16 switching
8 switching
1 switching

0

–1
–2
–3

0 50 100 150 200

pF

)

Load Capacitance and # of Outputs Switching

Adjustment of t

THL

for

5

4

16 switching
8 switching
1 switching

4.5V

5.5V

3

CC

CC

2

1

Offset in ns

0

–1

–2

0 50 100 150 200

pF

and V

V

OHV

vs Load Capacitance

OLP

= 5V, VIN = 0 to 3V

V

CC

4.0

3.5

3.0

2.5

2.0

1.5

volts

1.0

0.5

0.0

–0.5

–1

0 50 100 150 200

pF pF

125°C
25°C
–55°C

125°C
25°C
–55°C

V

and V

OHP

vs Load Capacitance

OLV

= 5V, VIN = 0 to 3V

V

CC

6
5
4
3
2

volts

1

0
–1
–2

0 50 100 150 200

125°C
25°C
–55°C

125°C
25°C
–55°C

SB00089

1998 Jan 16

9

Philips Semiconductors Product specification

Dual octal buffer line driver (3-State)

QFP52: plastic quad flat package; 52 leads (lead length 1.6 mm); body 10 x 10 x 2.0 mm SOT379-1

MB2541

1998 Jan 16

10

Philips Semiconductors Product specification

Dual octal buffer line driver (3-State)

MB2541

NOTES

1998 Jan 16

11

Philips Semiconductors Product specification

Dual octal buffer line driver (3-State)

Data sheet status

Data sheet
status

Objective
specification

Preliminary
specification

Product
specification

Product
status

Development

Qualification

Production

Definition

This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.

This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.

[1]

MB2541

[1] Please consult the most recently issued datasheet before initiating or completing a design.

Definitions

Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.

Disclaimers

Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can

reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.

Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone [phone]

 Copyright Philips Electronics North America Corporation 1998

All rights reserved. Printed in U.S.A.

print code Date of release: 05-96
Document order number: 9397-750-03512




1998 Jan 16

12