Datasheet mb2374 DATASHEETS (Philips)

ADVANCED BiCMOS PRODUCTS

MB2374

Dual octal D-type flip-flop; positive-edge trigger (3-State)

Product specification August 23, 1993 IC23

Philips Semiconductors

Philips Semiconductors Product specification

È

MB237416-bit D-type flip-flop; positive-edge trigger (3-State)

FEA TURES

•Two 8-bit positive edge triggered registers

•Live insertion/extraction permitted

•Power-up 3-State

•Power-up reset

•Multiple V

and GND pins minimize switching noise

CC

•3-State output buffers

•Output capability: +64mA/–32mA

•Latch-up protection exceeds 500mA per Jedec Std 17

•ESD protection exceeds 2000V per MIL STD 883 Method 3015

and 200V per Machine Model

QUICK REFERENCE DATA

SYMBOL PARAMETER

C

t

PLH

t

PHL

C

OUT

I

CCZ

IN

Propagation delay nCP to nQx

Input capacitance VI = 0V or V Output capacitance VO = 0V or VCC; 3-State 7 pF Total supply current Outputs disabled; VCC = 5.5V 120 µA

DESCRIPTION

The MB2374 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

The MB2374 has two 8-bit, edge triggered registers, with each register coupled to eight 3-State output buffers. The two sections of each register are controlled independently by the clock (nCP) and Output Enable (nOE

Each register is fully edge triggered. The state of each D input, one set-up time before the Low-to-High clock transition, is transferred to the corresponding flip-flop’s Q output.

The 3-State output buffers are designed to drive heavily loaded 3-State buses, MOS memories, or MOS microprocessors. Each active-Low Output Enable (nOE its register independent of the clock operation.

When nOE register. When nOE High-impedance “OFF” state, which means they will neither drive nor load the bus.

CONDITIONS

T

= 25°C; GND = 0V

amb

CL = 50pF; VCC = 5V

CC

) control gates.

) controls all eight 3-State buffers for

is Low, the stored data appears at the outputs for that

is High, the outputs for that register are in the

TYPICAL UNIT

3.4

3.6

ns

4 pF

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER

52–pin plastic Quad Flat Pack –40°C to +85°C MB2374 BB MB2374 BB SOT379-1

PIN CONFIGURATION

1Q3

1Q2

GND

1Q1

52

1

V

CC

1Q4

2

1Q5

3 4

GND

5

1Q6

6

1Q7

7

GND

8

2Q0

9

2Q1

10

GND

11

2Q2

12

2Q3

13

V

CC

2Q4

2Q5

2Q6

GND

1Q0

1OE

GND

47 4446 434950 41 404251 4548

52-pin PQFP

19 2220 231716 25 26241514 2118

2Q7

2OE

GND

1CP

2CP

1D0

2D7

1D1

2D6

GND

1D2

2D5

1D3

39 38 37 36 35 34 33 32

31 30 29 28

27

2D4

V

CC

1D4 1D5 GND 1D6 1D7 GND 2D0

2D1 GND 2D2 2D3

V

CC

SB00062

PIN DESCRIPTION

PIN NUMBER SYMBOL FUNCTION

44, 43, 41, 40, 38, 37, 35, 34, 32, 31, 29, 28,

26, 25, 23, 22

48, 49, 51, 52,

2, 3, 5, 6,

8, 9, 11, 12,

14, 15, 17, 18

47, 19 1OE, 2OE

45, 21 1CP, 2CP

4, 7, 10, 16, 20, 24,

30, 33, 36, 42, 46, 50

1, 13, 27, 39 V

1D0 – 1D7 2D0 – 2D7

1Q0 – 1Q7 2Q0 – 2Q7

Data inputs

Data outputs

Output enable inputs (active-Low)

Clock pulse inputs (active rising edge)

GND Ground (0V)

CC

Positive supply voltage

1993 Aug 23 853–1625 10583

2

Philips Semiconductors Product specification

MB237416-bit D-type flip-flop; positive-edge trigger (3-State)

LOGIC SYMBOL

45 47

21 19

1D0 1D1 1D2 1D3

1CP 1OE

1Q0 1Q1 1Q2

2D0 2D1 2D2 2D3

2CP 2OE

2Q0 2Q1 2Q2

LOGIC DIAGRAM

nD0

44 43 41 40

1Q3

4948

32 31 29 28

2Q3

98

38 37 35 34

1D4 1D5 1D6 1D7

1Q4 1Q5 1Q6651Q7

5251

1211

32

26 25 23 22

2D4 2D5 2D6 2D7

2Q4 2Q5 2Q6

1514

nD1

2Q7

1817

SB00063

nD2

nD3

LOGIC SYMBOL (IEEE/IEC)

47

EN

45

C1

44

1D

43

41

40

38

37

35

34

nD4

48

49

51

52

2

3

5

6

nD5

19

21

32

31

29

28

26

25

23

22

nD6

EN

C1

1D

nD7

8

9

11

12

14

15

17

18

SB00064

nCP

nOE

D

CP Q

nQ0

D

CP Q

nQ1 nQ2 nQ3 nQ4 nQ5 nQ6 nQ7

D

CP Q

D

CP Q

D

CP Q

D

CP Q

D

CP Q

D

CP Q

SB00065

1993 Aug 23

3

Philips Semiconductors Product specification

MB237416-bit D-type flip-flop; positive-edge trigger (3-State)

FUNCTION TABLE

INPUTS INTERNAL OUTPUTS OPERATING MODE

nOE nCP nDx REGISTER nQ0 – nQ7

L L

L ↑ X NC NC Hold

H H

H = High voltage level h = High voltage level one set-up time prior to the High-to-Low E transition L = Low voltage level l = Low voltage level one set-up time prior to the High-to-Low E transition NC= No change X = Don’t care Z = High impedance “off” state ↑ = Low-to-High clock transition

= Not a Low-to-High clock transition

↑

↑ ↑

h

X

nDx

l

L

H

NC

nDx

L

H

Z Z

Load and read register

Disable outputs

ABSOLUTE MAXIMUM RATINGS

SYMBOL

V

CC

I

IK

V

I

OK

V

OUT

I

OUT

T

stg

DC supply voltage –0.5 to +7.0 V DC input diode current VI < 0 –18 mA DC input voltage DC output diode current VO < 0 –50 mA DC output voltage DC output current output in Low state 128 mA Storage temperature range –65 to 150 °C

PARAMETER CONDITIONS RATING UNIT

3

1, 2

–1.2 to +7.0 V

output in Off or High state –0.5 to +5.5 V

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNIT

MIN MAX

V

CC

V V V I

OH

I

OL

∆t/∆v Input transition rise or fall rate 0 10 ns/V

T

amb

DC supply voltage 4.5 5.5 V Input voltage 0 V

I

High-level input voltage 2.0 V

IH

Low-level Input voltage 0.8 V

IL

High-level output current –32 mA Low-level output current 64 mA

Operating free-air temperature range –40 +85 °C

CC

V

1993 Aug 23

4

Philips Semiconductors Product specification

MB237416-bit D-type flip-flop; positive-edge trigger (3-State)

DC ELECTRICAL CHARACTERISTICS

LIMITS

T

= –40°C

SYMBOL PARAMETER TEST CONDITIONS T

MIN TYP MAX MIN MAX

V

RST

I

OFF

I

PU/PD

I

OZH

I

OZL

I

CEX

I

CCH

I

CCL

I

CCZ

∆I

Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V

IK

VCC = 4.5V; IOH = –3mA; VI = VIL or V

High-level output voltage VCC = 5.0V; IOH = –3mA; VI = VIL or V

OH

VCC = 4.5V; IOH = –32mA; VI = VIL or V

Low-level output voltage VCC = 4.5V; IOL = 64mA; VI = VIL or V

OL

Power-up output voltage

I

Input leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA

I

3

VCC = 5.5V; IO = 1mA; VI = GND or V

IH

CC

2.5 2.9 2.5 V

3.0 3.4 3.0 V

2.0 2.4 2.0 V

Power-off leakage current VCC = 0.0V; VO or VI ≤ 4.5V ±5.0 ±100 ±100 µA Power-up/down 3-State

output current

4

3-State output High current VCC = 5.5V; VO = 2.7V; VI = VIL or V 3-State output Low current VCC = 5.5V; VO = 0.5V; VI = VIL or V Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V

I

O

Output current

1

Quiescent supply current VCC = 5.5V; Outputs Low, VI = GND or V

VCC = 2.1V; VO = 0.5V; VI = GND or VCC, VOE = GND

IH

CC

VCC = 5.5V; VO = 2.5V –50 –70 –180 –50 –180 mA VCC = 5.5V; Outputs High, VI = GND or V

CC

VCC = 5.5V; Outputs 3-State;

Additional supply current per

CC

input pin

2

VI = GND or V VCC = 5.5V; one input at 3.4V,

other inputs at VCC or GND

CC

= +25°C

amb

0.42 0.55 0.55 V

0.13 0.55 0.55 V

±5.0 ±50 ±50 µA

5.0 50 50 µA

–5.0 –50 –50 µA

5.0 50 50 µA

120 250 250 µA

48 60 60 mA

120 250 250 µA

0.5 1.5 1.5 mA

amb

to +85°C

UNIT

NOTES:

1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.

2. This is the increase in supply current for each input at 3.4V.

3. For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.

4. This parameter is valid for any V transition time of up to 100µsec is permitted.

between 0V and 2.1V with a transition time of up to 10msec. From VCC = 2.1V to VCC = 5V ± 10% a

CC

AC CHARACTERISTICS

GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω

LIMITS

SYMBOL PARAMETER WAVEFORM

f

MAX

t

PLH

t

PHL

t

PZH

t

PZL

t

PHZ

t

PLZ

Maximum clock frequency 1 180 260 180 MHz Propagation delay

nCP to nQx Output enable time

to High and Low level Output disable time

from High and Low level

1 3

4 3

4

1993 Aug 23

T

= +25oC

amb

VCC = +5.0V

MIN TYP MAX MIN MAX

1.8

1.2

2.1

1.2

1.8

3.4

3.6

3.0

4.0

3.4

3.6

4.6

4.1

5.5

4.6

5.0

5

T

V

CC

1.8

1.2

2.1

1.2

1.8

= -40 to

amb

+85oC

= +5.0V ±0.5V

5.1

4.8

6.2

5.1

5.5

UNIT

ns

Philips Semiconductors Product specification

MB237416-bit D-type flip-flop; positive-edge trigger (3-State)

AC SETUP REQUIREMENTS

GND = 0V, tR = tF = 2.5ns, CL = 50pF, RL = 500Ω

LIMITS

T

SYMBOL PARAMETER WAVEFORM

ts(H) ts(L)

th(H) th(L)

tw(H) tw(L)

Setup time, High or Low nDx to nCP

Hold time, High or Low nDx to nCP

nCP pulse width High or Low

2

1

AC WAVEFORMS

VM = 1.5V, VIN = GND to 3.0V

1/f

MAX

nCP

nQx

V

M

tw(H) tw(L)

t

PHL

Waveform 1. Propagation Delay, Clock Input to Output,

Clock Pulse Width, and Maximum Clock Frequency

V

M

V

M

V

M

t

PLH

V

M

SB00066

= +25oC

amb

VCC = +5.0V

MIN TYP MIN

1.0

2.8

0.3

0.1

–0.1 –0.3

1.2

1.5

OE

nQx

Waveform 3. 3–State Output Enable Time to High Level and

Output Disable Time from High Level

T

= -40 to +85oC

amb

VCC = +5.0V ±0.5V

V

M

t

PZH

V

M

UNIT

1.0

2.8

V

M

t

PHZ

V

OH

–0.3V

V

OH

0V

SB00068

ns

V

nDx

t

(H) th(H) ts(L) th(L)

s

nCP

NOTE: The shaded areas indicate when the input is permitted

to change for predictable output performance.

V

M

V

M

Waveform 2. Data Setup and Hold Times

OE

V

M

nQx

V

M

V

M

t

PZL

V

M

t

PLZ

V

M

VOL +0.3V V

OL

SB00069

Waveform 4. 3–State Output Enable Time to Low Level and

Output Disable Time from Low Level

SB00067

1993 Aug 23

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Philips Semiconductors Product specification

MB237416-bit D-type flip-flop; positive-edge trigger (3-State)

TEST CIRCUIT AND WAVEFORM

V

CC

V

OUT

C

L

PULSE

GENERATOR

V

IN

D.U.T.

R

T

Test Circuit for 3-State Outputs

SWITCH POSITION

TEST SWITCH

t t

PLZ PZL

closed closed

All other open

DEFINITIONS

= Load resistor; see AC CHARACTERISTICS for value.

R

L

C

= Load capacitance includes jig and probe capacitance; see AC

L

CHARACTERISTICS for value.

= Termination resistance should be equal to Z

R

T

of pulse generators.

OUT

t

90%

7.0V NEGATIVE

R

L

R

L

PULSE

POSITIVE PULSE

V

M

10% 10%

t

THL

t

TLH

90% 90%

V

M

10%

W

V

M

(tF)

(tR)t

V

M

t

W

= 1.5V

V

M

Input Pulse Definition

90%

10%

t

TLH

THL

AMP (V)

0V

(tR)

(tF)

AMP (V)

0V

INPUT PULSE REQUIREMENTS

FAMILY

Amplitude Rep. Rate t

t

W

t

R

F

MB 3.0V 1MHz 500ns 2.5ns 2.5ns

SB00010

1993 Aug 23

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Philips Semiconductors Product specification

MB237416-bit D-type flip-flop; positive-edge trigger (3-State)

t

vs T emperature (T

PLH

= 50pF, 1 Output Switching

C

L

nCP to nQx

6

5

4

ns

3

2

1

–55 –35 –15 5 25 45 65 85 105 125

°C

t

vs T emperature (T

PHL

= 50pF, 1 Output Switching

C

L

nCP to nQx

6

amb

)

Load Capacitance and # of Outputs Switching

Adjustment of t

nCP to nQx

PLH

for

5

MAX

4.5V

5.5V

MIN

CC CC

4

3

2

1

Offset in ns

0

16 switching 8 switching 1 switching

–1

–2

0 50 100 150 200

pF

)

Load Capacitance and # of Outputs Switching

Adjustment of t

nCP to nQx

PHL

for

4

5

4

ns

3

2

1

–55 –35 –15 5 25 45 65 85 105 125

°C

t

vs T emperature (T

PZH

C

= 50pF, 1 Output Switching

L

nOE

to nQx

amb

)

6

5

4

3

ns

2

1

0

–55 –35 –15 5 25 45 65 85 105 125

°C

MAX

4.5V

5.5V

MIN

MAX

4.5V

5.5V

MIN

3

CC CC

2

1

Offset in ns

0

16 switching 8 switching 1 switching

–1

–2

0 50 100 150 200

pF

Load Capacitance and # of Outputs Switching

Adjustment of t

nOE

to nQx

PZH

for

5

4

3

CC

2

1

Offset in ns

16 switching 8 switching 1 switching

0

–1

–2

0 50 100 150 200

pF

SB00070

1993 Aug 23

8

Philips Semiconductors Product specification

MB237416-bit D-type flip-flop; positive-edge trigger (3-State)

t

vs T emperature (T

PZL

= 50pF, 1 Output Switching

C

L

nOE

to nQx

7

amb

)

Load Capacitance and # of Outputs Switching

Adjustment of t

to nQx

nOE

PZL

for

4

6

5

4

ns

3

2

1

–55 –35 –15 5 25 45 65 85 105 125

°C

t

vs T emperature (T

PHZ

= 50pF, 1 Output Switching

C

L

nOE

to nQx

amb

)

6

5

4

3

ns

2

1

0

–55 –35 –15 5 25 45 65 85 105 125

°C

MAX

4.5V

5.5V

MIN

MAX

4.5V

5.5V

MIN

3

CC

2

1

Offset in ns

0

16 switching 8 switching 1 switching

–1

–2

0 50 100 150 200

pF

Load Capacitance and # of Outputs Switching

Adjustment of t

nOE

to nQx

PHZ

for

6 5 4

CC CC

3 2

Offset in ns

1

16 switching 8 switching 1 switching

0 –1 –2

0 50 100 150 200

pF

t

vs T emperature (T

PLZ

C

= 50pF, 1 Output Switching

L

nOE

to nQx

amb

)

7

6

5

4

ns

3

2

1

–55 –35 –15 5 25 45 65 85 105 125

°C

MAX

4.5V

5.5V

MIN

to nQx

PLZ

for

Load Capacitance and # of Outputs Switching

Adjustment of t

nOE

6 5 4

16 switching 8 switching 1 switching

3

CC CC

2

Offset in ns

1

0 –1 –2

0 50 100 150 200

pF

SB00071

1993 Aug 23

9

Philips Semiconductors Product specification

MB237416-bit D-type flip-flop; positive-edge trigger (3-State)

t

vs T emperature (T

TLH

= 50pF, 1 Output Switching

C

L

4

3

ns

2

amb

)

Adjustment of t

Load Capacitance/# of Outputs

TLH

for

9

7

16 switching 8 switching 1 switching

5

4.5V

CC

5.5V

CC

3

Offset in ns

1

–1

1

–55 –35 –15 5 25 45 65 85 105 125

°C

t

vs T emperature (T

THL

C

= 50pF, 1 Output Switching

L

amb

)

3

2

ns

1

0

–55 –35 –15 5 25 45 65 85 105 125

°C

V

and V

OHV

vs Load Capacitance

OLP

= 5V, VIN = 0 to 3V

V

CC

4.0

3.5

3.0

2.5

2.0

Volts

1.5

1.0

0.5

0.0

–0.5

0 50 100 150 200

pF

4.5V

5.5V

125°C 25°C –55°C

–3

0 50 100 150 200

pF

Load Capacitance and # of Outputs Switching

Adjustment of t

THL

for

4

3

CC CC

2

1

Offset in ns

0

16 switching 8 switching 1 switching

–1

–2

0 50 100 150 200

pF

V

and V

OHP

vs Load Capacitance

OLV

= 5V, VIN = 0 to 3V

V

CC

6

5

Volts

4

3

2

125°C 25°C –55°C

1

0 –1

125°C 25°C –55°C

–2

0 50 100 150 200

pF

SB00072

1993 Aug 23

10

Philips Semiconductors Product specification

Dual octal D-type flip-flop; positive-edge trigger (3-State)

QFP52: plastic quad flat package; 52 leads (lead length 1.6 mm); body 10 x 10 x 2.0 mm SOT379-1

MB2374

1993 Aug 23

11

Philips Semiconductors Product specification

Dual octal D-type flip-flop; positive-edge trigger (3-State)

Data sheet status

Objective specification

Preliminary specification

Product specification

Product status

Development

Qualification

Production

Definition

This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice.

This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product.

This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.

[1]

MB2374

[1] Please consult the most recently issued datasheet before initiating or completing a design.

Definitions

Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Disclaimers

Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can

reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381

 Copyright Philips Electronics North America Corporation 1998

 

1993 Aug 23

12