Product specification
Supersedes data of 1993 Aug 18
IC23 Data Handbook
1998 Jan 16
Page 2
Philips SemiconductorsProduct specification
È
MB224116-bit buffer/line driver (3-State)
FEA TURES
•16–bit bus interface
•Power 3-State
•Multiple V
and GND pins minimize switching noise
CC
•3-State buffers
•Output capability: +64mA/–32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
•Inputs are disabled during 3-State mode
QUICK REFERENCE DATA
SYMBOLPARAMETER
C
t
PLH
t
PHL
C
OUT
I
CCZ
IN
Propagation delay
nAx to nYx
CL = 50pF;
VCC = 5V
Input capacitanceVI = 0V or V
Output capacitanceVO = 0V or V
Total supply currentOutputs disabled; VCC = 5.5V65µA
DESCRIPTION
The MB2241 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The MB2241 device is a 16-bit buffer that is ideal for driving bus
lines. The device features four Output Enables (1OE
4OE), each controlling four of the 3-State outputs.
CONDITIONS
T
= 25°C;
amb
GND = 0V
TYPICALUNIT
3.0
3.1
CC
3-State7pF
CC;
4pF
, 2OE, 3OE,
ns
ORDERING INFORMATION
PACKAGESTEMPERATURE RANGE OUTSIDE NORTH AMERICANORTH AMERICADWG NUMBER
52–pin plastic Quad Flat Pack–40°C to +85°CMB2241 BBMB2241 BBSOT379-1
PIN CONFIGURATION
1Y3
1Y2
GND
1Y1
1
V
CC
2
2Y0
3
2Y1
4
GND
5
2Y2
6
2Y3
7
GND
8
3Y0
9
3Y1
10
GND
11
3Y2
12
3Y3
13
V
CC
4Y0
4Y1
4Y2
GND
1Y0
1OE
GND
47444643495041 404251524548
52-pin PQFP
19222023171625 262415142118
4Y3
3OE
GND
20E
4OE
1A0
4A3
1A1
4A2
GND
GND
1A2
4A1
1A3
39
38
37
36
35
34
33
32
31
30
29
28
27
4A0
SB00024
V
CC
2A0
2A1
GND
2A2
2A3
GND
3A0
3A1
GND
3A2
3A3
V
CC
PIN DESCRIPTION
PIN NUMBERSYMBOLNAME AND FUNCTION
44, 43, 41, 40,
38, 37, 35, 34,
32, 31, 29, 28,
26, 25, 23, 22
14, 15, 17, 18,
8, 9, 11, 12,
2, 3, 5, 6,
48, 49, 51, 52
47, 45,
21, 19
4, 7, 10, 16,
20, 24, 30, 33,
36, 42, 46, 50
1, 13, 27, 39V
1A0 – 1A3,
2A0 – 2A3,
3A0 – 3A3,
Data inputs
4A0 – 4A3
4Y0 – 4Y3,
3Y0 – 3Y3,
2Y0 – 2Y3,
Data outputs
1Y0 – 1Y3
1OE, 2OE,
3OE, 4OE
Output enables
GNDGround (0V)
CC
Positive supply voltage
1998 Jan 16853–1571 18869
2
Page 3
Philips SemiconductorsProduct specification
MB224116-bit buffer/line driver (3-State)
LOGIC SYMBOL
1A0
44
1A1
43
1A2
41
1A3
40
1OE
47
2A0
38
2A1
37
2A2
35
2A3
34
2OE
45
1Y0
1Y1
1Y2
1Y3
2Y0
2Y1
2Y2
2Y3
48
49
51
52
2
3
5
6
LOGIC SYMBOL (IEEE/IEC)
47
44
43
41
40
EN1
3A0
32
3A1
31
3A2
29
3A3
28
3OE
19
4A0
26
4A1
25
4A2
23
4A3
22
4OE
21
1
3Y0
8
3Y1
9
3Y2
11
3Y3
12
4Y0
14
4Y1
15
4Y2
17
4Y3
18
SB00025
19
48
49
51
52
32
31
29
28
EN3
3
8
9
11
12
45
382
37
355
346
EN2
2
SB00026
3
21
2614
2515
2317
22
EN4
4
SB00027
18
FUNCTION TABLE
INPUTSOUTPUTS
1OE or 3OE1An or 3An2OE or 4OE2An or 4An1Yn or 3Yn2Yn or 4Yn
L
L
H
H = High voltage level
L = Low voltage level
Z = High voltage level-impedance ”OFF” state
L
H
X
H
H
L
L
H
X
L
H
Z
L
H
Z
1998 Jan 16
3
Page 4
Philips SemiconductorsProduct specification
MB224116-bit buffer/line driver (3-State)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
I
OUT
T
stg
DC supply voltage–0.5 to +7.0V
DC input diode currentVI < 0–18mA
DC input voltage
DC output diode currentVO < 0–50mA
DC output voltage
DC output currentoutput in Low state128mA
Storage temperature range–65 to 150°C
PARAMETERCONDITIONSRATINGUNIT
3
3
1, 2
–1.2 to +7.0V
output in Off or High state–0.5 to +5.5V
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
High-level output voltageVCC = 5.0V; IOH = –3mA; VI = VIL or V
OH
VCC = 4.5V; IOH = –32mA; VI = VIL or V
Low-level output voltageVCC = 4.5V; IOL = 64mA; VI = VIL or V
OL
I
Input leakage currentVCC = 5.5V; VI = GND or 5.5V±0.01±1.0±1.0µA
I
IH
IH
IH
IH
2.52.92.5V
3.03.43.0V
2.02.42.0V
Power-off leakage currentVCC = 0.0V; VO or VI ≤ 4.5V±5.0±100±100µA
Power-up/down 3-State
PU
output current
3-State output High currentVCC = 5.5V; VO = 2.7V; VI = VIL or V
3-State output Low currentVCC = 5.5V; VO = 0.5V; VI = VIL or V
Output high leakage currentVCC = 5.5V; VO = 5.5V; VI = GND or V
O
Output current
1
Quiescent supply currentVCC = 5.5V; Outputs Low, VI = GND or V
VCC = 2.0V; VO = 0.5V; VI = GND or VCC;
VOE = VCC; VOE = GND
IH
IH
CC
VCC = 5.5V; VO = 2.5V–50–70–180–50–180mA
VCC = 5.5V; Outputs High, VI = GND or V
CC
CC
VCC = 5.5V; Outputs 3-State;
V
= GND or V
Additional supply current per
CC
input pin
2
I
Outputs enabled, one input at 3.4V , other
inputs at VCC or GND; VCC = 5.5V
CC
= +25°C
amb
0.420.550.55V
±5.0±50±50µA
5.05050µA
–5.0–50–50µA
5.05050µA
65250250µA
486060mA
65250250µA
0.51.51.5mA
amb
to +85°C
UNIT
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
AC CHARACTERISTICS
GND = 0V; tR = tF = 2.5ns; CL = 50pF, RL = 500Ω
LIMITS
T
SYMBOLPARAMETERWAVEFORM
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
Propagation delay
nAx to nYx
Output enable time
to High and Low level
Output disable time
from High and Low level
1
2
2
= +25°C
amb
VCC = +5.0V
MinTypMaxMinMax
1.2
1.2
1.3
1.8
1.3
1.2
3.0
3.1
3.7
4.8
3.9
3.4
4.5
4.5
6.3
6.8
5.9
5.2
T
= –40°C to +85°C
amb
VCC = +5.0V ±0.5V
1.2
1.2
1.3
1.8
1.3
1.2
5.1
5.1
6.9
7.4
6.7
5.8
UNIT
ns
ns
ns
1998 Jan 16
5
Page 6
Philips SemiconductorsProduct specification
MB224116-bit buffer/line driver (3-State)
AC WAVEFORMS
VM = 1.5V, VIN = GND to 3.0V
nOE INPUT
nAx INPUT
nYx OUTPUT
V
M
t
PLH
V
M
V
M
t
PHL
V
M
SB00028
Waveform 1. W aveforms Showing the Input (nAx) to Output
(nYx) Propagation Delays
nOE INPUT
nYx OUTPUT
nYx OUTPUT
Waveform 2. Waveforms Showing the 3-State Output Enable
V
M
t
PZL
V
M
t
PZH
V
M
and Disable Times
V
M
t
PLZ
t
PHZ
3.5V
VOL + 0.3V
V
OL
V
OH
– 0.3V
V
OH
0V
SB00029
TEST CIRCUIT AND WAVEFORMS
V
CC
V
PULSE
GENERATOR
SWITCH POSITION
TESTSWITCH
t
PLZ
t
PZL
All otheropen
DEFINITIONS
=Load resistor; see AC CHARACTERISTICS for value.
R
L
CL =Load capacitance includes jig and probe capacitance; see AC
CHARACTERISTICS for value.
=Termination resistance should be equal to Z
R
T
IN
D.U.T.
R
T
Test Circuit for 3-State Outputs
closed
closed
V
OUT
OUT
R
L
C
L
of pulse generators.
R
L
t
90%
7.0V
NEGATIVE
PULSE
POSITIVE
PULSE
10%
FAMILY
MB3.0V1MHz500ns2.5ns2.5ns
V
M
10%10%
t
t
90%90%
V
M
AmplitudeRep. Ratet
W
V
M
(tF)
THL
(tR)t
TLH
V
M
t
W
V
= 1.5V
M
Input Pulse Definition
INPUT PULSE REQUIREMENTS
W
90%
10%
t
R
AMP (V)
0V
t
(tR)
TLH
(tF)
THL
AMP (V)
0V
t
F
1998 Jan 16
SB00010
6
Page 7
Philips SemiconductorsProduct specification
MB224116-bit buffer/line driver (3-State)
t
vs T emperature (T
PLH
= 50pF, 1 Output Switching
C
L
nAx to nYx
6
5
4
3
ns
2
1
0
–55 –35 –15525456585 105 125
°C
t
vs T emperature (T
PHL
= 50pF, 1 Output Switching
C
L
nAx to nYx
7
6
5
4
ns
3
2
1
0
–55 –35 –15525456585 105 125
°C
amb
amb
)
Load Capacitance and # of Outputs Switching
Adjustment of t
nAx to nYx
PLH
for
5
MAX
4.5V
5.5V
CC
CC
4
3
2
1
Offset in ns
16 switching
8 switching
1 switching
0
MIN
–1
–2
050100150200
pF
)
Load Capacitance and # of Outputs Switching
Adjustment of t
nAx to nYx
PHL
for
4
MAX
4.5V
5.5V
MIN
3
2
CC
CC
1
Offset in ns
0
–1
16 switching
8 switching
1 switching
–2
050100150200
pF
t
vs T emperature (T
PZH
C
= 50pF, 1 Output Switching
L
nOE
to nYx
amb
)
8
7
6
5
4
ns
3
2
1
0
–55 –35 –15525456585 105 125
°C
MAX
4.5V
5.5V
MIN
to nYx
PZH
for
Load Capacitance and # of Outputs Switching
Adjustment of t
nOE
5
4
3
2
CC
CC
1
Offset in ns
0
16 switching
8 switching
1 switching
–1
–2
050100150200
pF
SB00030
1998 Jan 16
7
Page 8
Philips SemiconductorsProduct specification
MB224116-bit buffer/line driver (3-State)
t
vs T emperature (T
PZL
= 50pF, 1 Output Switching
C
L
nOE
to nYx
9
8
7
6
5
ns
4
3
2
1
–55 –35 –15525456585 105 125
°C
t
vs T emperature (T
PHZ
= 50pF, 1 Output Switching
C
L
nOE
to nYx
8
7
6
5
4
ns
3
2
1
0
–55 –35 –15525456585 105 125
°C
amb
amb
)
Load Capacitance and # of Outputs Switching
Adjustment of t
to nYx
nOE
PZL
for
4
MAX
4.5V
5.5V
MIN
CC
CC
3
2
1
Offset in ns
0
–1
16 switching
8 switching
1 switching
–2
050100150200
pF
)
Load Capacitance and # of Outputs Switching
Adjustment of t
to nYx
nOE
PHZ
for
7
6
MAX
4.5V
5.5V
MIN
5
CC
CC
4
3
2
Offset in ns
1
0
16 switching
8 switching
1 switching
–1
–2
050100150200
pF
t
vs T emperature (T
PLZ
C
= 50pF, 1 Output Switching
L
nOE
to nYx
amb
)
7
6
5
4
ns
3
2
1
0
–55 –35 –15525456585 105 125
°C
MAX
4.5V
5.5V
MIN
to nYx
PLZ
for
Load Capacitance and # of Outputs Switching
Adjustment of t
nOE
6
5
4
CC
CC
3
2
Offset in ns
1
16 switching
8 switching
1 switching
0
–1
–2
050100150200
pF
SB00031
1998 Jan 16
8
Page 9
Philips SemiconductorsProduct specification
MB224116-bit buffer/line driver (3-State)
t
vs T emperature (T
TLH
= 50pF, 1 Output Switching
C
L
4
3
ns
2
1
–55 –35 –15525456585 105 125
°C
t
vs T emperature (T
THL
= 50pF, 1 Output Switching
C
L
3.0
amb
amb
)
Load Capacitance and # of Outputs Switching
Adjustment of t
TLH
for
8
4.5V
5.5V
7
6
5
CC
CC
4
3
2
Offset in ns
1
16 switching
8 switching
1 switching
0
–1
–2
–3
050100150200
pF
)
Load Capacitance and # of Outputs Switching
Adjustment of t
THL
for
4
2.5
2.0
ns
1.5
1
–55 –35 –15525456585 105 125
°C
and V
V
OHV
vs Load Capacitance
OLP
= 5V, VIN = 0 to 3V
V
CC
4.0
3.5
3.0
2.5
2.0
1.5
volts
1.0
0.5
0.0
–0.5
–1
050100150200
pFpF
4.5V
5.5V
125°C
25°C
–55°C
125°C
25°C
–55°C
3
2
CC
CC
1
Offset in ns
0
16 switching
8 switching
1 switching
–1
–2
050100150200
pF
V
and V
OHP
vs Load Capacitance
OLV
= 5V, VIN = 0 to 3V
V
CC
6
5
volts
4
3
2
125°C
25°C
–55°C
1
0
–1
125°C
25°C
–55°C
–2
050100150200
SB00032
1998 Jan 16
9
Page 10
Philips SemiconductorsProduct specification
16-bit buffer/line driver (3-State)
QFP52: plastic quad flat package; 52 leads (lead length 1.6 mm); body 10 x 10 x 2.0 mmSOT379-1
MB2241
1998 Jan 16
10
Page 11
Philips SemiconductorsProduct specification
16-bit buffer/line driver (3-State)
MB2241
NOTES
1998 Jan 16
11
Page 12
Philips SemiconductorsProduct specification
16-bit buffer/line driver (3-State)
Data sheet status
Data sheet
status
Objective
specification
Preliminary
specification
Product
specification
Product
status
Development
Qualification
Production
Definition
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1]
MB2241
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
print codeDate of release: 05-96
Document order number:9397-750-03804
1998 Jan 16
12
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