Datasheet MB2052BB Datasheet (Philips)

Philips Semiconductors Advanced BiCMOS Products Product specification

MB2052Dual octal registered transceiver (3-State)

1

August 23, 1993 853-1712 10586

FEATURES

•Two 8-bit registered transceivers

•Live insertion/extraction permitted

•Power-up 3-State

•Power-up reset

•Multiple V

CC

and GND pins minimize

switching noise

•Independent registers for A and B buses

•Output capability: +64mA/–32mA

•Latch-up protection exceeds 500mA per

Jedec JC40.2 Std 17

•ESD protection exceeds 2000V per MIL

STD 883 Method 3015 and 200V per
Machine Model

DESCRIPTION

The MB2052 high-performance BiCMOS
device combines low static and dynamic
power dissipation with high speed and high
output drive.

The MB2052 is a dual octal registered
transceiver. Two 8-bit registers store data
flowing in both directions between two
bidirectional buses. Data applied to the inputs
is entered and stored on the rising edge of
the Clock (nCPXX) provided that the Clock
Enable (nCEXX

) is Low. The data is then
present at the 3-State output buffers, but is
only accessible when the Output Enable
(nOEXX

) is Low. Data flow from A inputs to B
outputs is the same as for B inputs to A
outputs.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

T

amb

= 25°C; GND = 0V

TYPICAL UNIT

t

PLH

t

PHL

Propagation delay
nCPBA to nAx or
nCPAB to nBx

CL = 50pF; VCC = 5V 5.7 ns

C

IN

Input capacitance VI = 0V or V

CC

4 pF

C

I/O

I/O capacitance VO = 0V or VCC; 3-State 7 pF

I

CCZ

Total supply current Outputs disabled; VCC = 5.5V 120 nA

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE ORDER CODE DRAWING NUMBER

52-pin plastic Quad Flat Pack –40°C to +85°C MB2052BB 1418B

PIN CONFIGURATION LOGIC SYMBOL

46 4350 405152 48

1A6

2A1

1A7

2A2

GND

1A4

2A4
2A5

2A3

1A3

2A0

1A5

1A2

10
11
12

13

1
2
3
4
5
6
7

8
9

191715 20 2316 2614 2118

1B7

2B2

2B0

GND

1B5

1B4

2B4
2B5

2B3

1B3

2B1

1B6

1B239
38
37
36
35
34
33
32

31
30
29
28

27

Vcc

1A1

1A0

1CEAB

1CPAB

1OEAB

1OEBA

1CPBA

1CEBA

GND

1B0

1B1

Vcc

Vcc

2A6

2A7

GND

2CEAB

2CPAB

2OEAB

2OEBA

2CPBA

2CEBA

2B7

2B6

Vcc

22 2524

47 4449 414245

MB2052

52-pin PQFP

1A0 1A1 1A2 1A3 1A4 1A5 1A6 1A7
48
49

1CPAB
1CEAB

45
44

1CPBA
1CEBA

50 51 1 2 3 5 6 7

1B0 1B1 1B2 1B3 1B4 1B5 1B6 1B7

42 41 39 38 37 36 35 34

2A0 2A1 2A2 2A3 2A4 2A5 2A6 2A7
19
18

2CPAB
2CEAB

22
23

2CPBA
2CEBA

8 9 10 11 12 13 15 16

2B0 2B1 2B2 2B3 2B4 2B5 2B6 2B7

33 32 31 29 28 27 25 24

461OEBA
471OEAB

212OEBA
202OEAB

È

È

È

Philips Semiconductors Advanced BiCMOS Products Product specification

MB2052Dual octal registered transceiver (3-State)

August 23, 1993

2

LOGIC SYMBOL (IEEE/IEC)

33
32
31
29
28
27
25
24

8

9
10
11
12
13
15
16

22

19

20

21

23

18

C6

C5

C6

C5

47

46

44

49

50
51

1
2
3
5
6
7

42
41
39
38
37
36
35
34

1, 4, 5

45

2, 3, 6

48

EN4

EN3

EN2

EN1

1, 4, 52, 3, 6

EN4

EN3

EN2

EN1

PIN DESCRIPTION

PIN NUMBER SYMBOL NAME AND FUNCTION

48, 45
19, 22

1CPAB / 1CPBA
2CPAB / 2CPBA

Clock input A to B / Clock input B to A

49, 44
18, 23

1CEAB / 1CEBA
2CEAB / 2CEBA

Clock enable input A to B / Clock enable input B to A

50, 51, 1, 2, 3, 5, 6, 7

8, 9, 10, 11, 12, 13, 15, 16

1A0 – 1A7
2A0 – 2A7

Data inputs/outputs (A side)

42, 41, 39, 38, 37, 36, 35, 34
33, 32, 31, 29, 28, 27, 25, 24

1B0 – 1B7
2B0 – 2B7

Data inputs/outputs (B side)

47, 46
20, 21

1OEAB / 1OEBA
2OEAB / 2OEBA

Output enable inputs

4, 17, 30, 43 GND Ground (0V)

14, 26, 40, 52 V

CC

Positive supply voltage

FUNCTION TABLE for Register nAx or nBx

INPUTS INTERNAL OPERATING

nAx or nBx nCPXX nCEXX Q MODE

X X H NC Hold data
L

H

↑
↑

L
L

L

H

Load data

H =High voltage level
L =Low voltage level
↑ =Low-to-High transition
X = Don’t care
XX=AB or BA
NC=No change

Philips Semiconductors Advanced BiCMOS Products Product specification

MB2052Dual octal registered transceiver (3-State)

August 23, 1993

3

FUNCTION TABLE for Output Enable

INPUTS INTERNAL nAx or nBx OPERATING

nOEXX Q OUTPUTS MODE

H X Z Disable outputs
L

L

L
H

L

H

Enable outputs

H =High voltage level
L =Low voltage level
X = Don’t care
XX=AB or BA
Z =High impedance ”off” state

LOGIC DIAGRAM

nCEAB

CE

Q

CP

D

CE

Q

CP

D

DETAIL A

DETAIL A X 7

nCPAB

nOEAB

nA0

nA2

nCPBA

nOEBA

nB0

nA3
nA4
nA5
nA6
nA7

nCEBA

nB1
nB2
nB3
nB4
nB5
nB6
nB7

nA1

Philips Semiconductors Advanced BiCMOS Products Product specification

MB2052Dual octal registered transceiver (3-State)

August 23, 1993

4

ABSOLUTE MAXIMUM RATINGS

1, 2

SYMBOL

PARAMETER CONDITIONS RATING UNIT

V

CC

DC supply voltage –0.5 to +7.0 V

I

IK

DC input diode current VI < 0 –18 mA

V

I

DC input voltage

3

–1.2 to +7.0 V

I

OK

DC output diode current VO < 0 –50 mA

V

OUT

DC output voltage

3

output in Off or High state –0.5 to +5.5 V

I

OUT

DC output current output in Low state 128 mA

T

stg

Storage temperature range –65 to 150 °C

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNIT

MIN MAX

V

CC

DC supply voltage 4.5 5.5 V

V

I

Input voltage 0 V

CC

V

V

IH

High-level input voltage 2.0 V

V

IL

Low-level Input voltage 0.8 V

I

OH

High-level output current –32 mA

I

OL

Low-level output current 64 mA

∆t/∆v Input transition rise or fall rate 0 10 ns/V

T

amb

Operating free-air temperature range –40 +85 °C

Philips Semiconductors Advanced BiCMOS Products Product specification

MB2052Dual octal registered transceiver (3-State)

August 23, 1993

5

DC ELECTRICAL CHARACTERISTICS

LIMITS

SYMBOL PARAMETER TEST CONDITIONS T

amb

= +25°C

T

amb

= –40°C

to +85°C

UNIT

MIN TYP MAX MIN MAX

V

IK

Input clamp voltage VCC = 4.5V; IIK = –18mA –0.9 –1.2 –1.2 V

VCC = 4.5V; IOH = –3mA; VI = VIL or V

IH

2.5 2.9 2.5 V

V

OH

High-level output voltage VCC = 5.0V; IOH = –3mA; VI = VIL or V

IH

3.0 3.4 3.0 V

VCC = 4.5V; IOH = –32mA; VI = VIL or V

IH

2.0 2.4 2.0 V

V

OL

Low-level output voltage VCC = 4.5V; IOL = 64mA; VI = VIL or V

IH

0.42 0.55 0.55 V

V

RST

Power-up output low voltage3VCC = 5.5V; IOL = 1mA; VI = GND or V

CC

0.13 0.55 0.55 V

I

I

Input leakage Control pins VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA
current Data pins VCC = 5.5V; VI = GND or 5.5V 5 100 100 µA

I

OFF

Power-off leakage current VCC = 0V; VO or VI ≤ 4.5V ±5.0 ±100 ±100 µA

I

PU/PD

Power-up/down 3-State
output current

4

VCC = 2.1V; VO = 0.5V; VI = GND or VCC;
V

OE

= Don’t care

±5.0 ±50 ±50 µA

IIH + I

OZH

3-State output High current VCC = 5.5V; VO = 2.7V; VI = VIL or V

IH

5.0 50 50 µA

IIL + I

OZL

3-State output Low current VCC = 5.5V; VO = 0.5V; VI = VIL or V

IH

–5.0 –50 –50 µA

I

CEX

Output High leakage current VCC = 5.5V; VO = 5.5V; VI = GND or V

cc

5.0 50 50 µA

I

O

Output current

1

VCC = 5.5V; VO = 2.5V –50 –70 –180 –50 –180 mA

I

CCH

VCC = 5.5V; Outputs High, VI = GND or V

CC

120 250 250 µA

I

CCL

Quiescent supply current VCC = 5.5V; Outputs Low, VI = GND or V

CC

39 60 60 mA

I

CCZ

VCC = 5.5V; Outputs 3-State;
VI = GND or V

CC

120 250 250 µA

∆I

CC

Additional supply current per
input pin

2

VCC = 5.5V; one input at 3.4V,
other inputs at V

CC

or GND

0.5 1.5 1.5 mA

NOTES:

1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.

2. This is the increase in supply current for each input at 3.4V.

3. For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.

4. This parameter is valid for any V

CC

between 0V and 2.1V with a transition time of up to 10msec. From VCC = 2.1V to VCC = 5V ± 10% a

transition time of up to 100µsec is permitted.

AC CHARACTERISTICS

GND = 0V; tR = tF = 2.5ns; CL = 50pF, RL = 500Ω

LIMITS

SYMBOL PARAMETER WAVEFORM

T

amb

= +25°C

V

CC

= +5.0V

T

amb

= –40°C to +85°C

V

CC

= +5.0V ±0.5V

UNIT

MIN TYP MAX MIN MAX

f

MAX

Maximum clock frequency 1 200 250 200 MHz

t

PLH

t

PHL

Propagation delay
nCPBA to nAx, nCPAB to nBx

1

2.1

2.6

3.7

4.1

4.9

5.3

2.1

2.6

5.4

5.8

ns

t

PZH

t

PZL

Output enable time
nOEBA

to nAx, nOEAB to nBx

3
4

1.2

2.0

2.9

3.7

4.1

5.0

1.2

2.0

4.8

5.8

ns

t

PHZ

t

PLZ

Output disable time
nOEBA

to nAx, nOEAB to nBx

3
4

1.0

1.5

3.5

3.0

4.7

4.1

1.0

1.5

5.2

4.6

ns

Philips Semiconductors Advanced BiCMOS Products Product specification

MB2052Dual octal registered transceiver (3-State)

August 23, 1993

6

AC SETUP REQUIREMENTS

LIMITS

SYMBOL PARAMETER WAVEFORM

T

amb

= +25°C

V

CC

= +5.0V

T

amb

= –40°C to +85°C

V

CC

= +5.0V ±0.5V

UNIT

MIN TYP MIN

tS(H)

ts(L)

Setup time
nAx to nCPAB or nBx to nCPBA

2

2.5

01.5

0.8

0.0

2.5

1.5

ns

th(H)

t

h

(L)

Hold time
nAx to nCPAB or nBx to nCPBA

2

1.5

0.5

0.0

–0.8

1.5

0.5

ns

ts(H)

t

s

(L)

Setup time
nCEAB

to nCPAB, nCEBA to nCPBA

2

3.0

2.0

1.4

0.7

3.0

2.0

ns

th(H)

t

h

(L)

Hold time
nCEAB

to nCPAB, nCEBA to nCPBA

2

0.5

0.0

–0.7
–1.3

0.5

0.0

ns

tw(H)

t

w

(L)

nCPAB or nCPBA pulse width,
High or Low

1

2.5

3.5

1.4

2.1

2.5

3.5

ns

AC WAVEFORMS

VM = 1.5V, VIN = GND to 3.0V

V

M

V

M

Waveform 1. Propagation Delay, Clock Input to Output,

Clock Pulse Width, and Maximum Clock Frequency

V

M

V

M

V

M

1/f

MAX

tw(H) tw(L)

t

PHL

t

PLH

nCPBA or

nCPAB

nAx or nBx

V

M

nAx, nBx

nCEAB

, nCEBA

V

M

V

M

V

M

V

MVM

nCPAB, nCPBA

Waveform 2. Data Setup and Hold Times

ts(H) th(H) ts(L) th(L)

nOEAB,
nOEBA

V

M

t

PZH

t

PHZ

0V

V

OH

–0.3V

nAx, nBx

Waveform 3. 3-State Output Enable Time to High Level

and Output Disable Time from High Level

nOEAB,
nOEBA

t

PZL

t

PLZ

0V

V

OL

+0.3V

nAx, nBx

Waveform 4. 3-State Output Enable Time to Low Level

and Output Disable Time from Low Level

V

M

V

M

V

M

V

M

V

M

Philips Semiconductors Advanced BiCMOS Products Product specification

MB2052Dual octal registered transceiver (3-State)

August 23, 1993

7

TEST CIRCUIT AND WAVEFORMS

PULSE

GENERATOR

R

T

V

IN

D.U.T

V

OUT

C

L

R

L

V

CC

R

L

7.0V

Test Circuit for 3-State Outputs

V

M

V

M

t

W

AMP (V)

NEGATIVE
PULSE

10% 10%

90%

90%

0V

V

M

V

M

t

W

AMP (V)

POSITIVE
PULSE

90% 90%

10%

10%

0V

t

THL

(tF)

t

TLH

(tR) t

THL

(tF)

t

TLH

(tR)

VM = 1.5V

Input Pulse Definition

DEFINITIONS

RL = Load resistor; see AC CHARACTERISTICS for value.
C

L

= Load capacitance includes jig and probe capacitance;

see AC CHARACTERISTICS for value.

R

T

= Termination resistance should be equal to Z

OUT

of

pulse generators.

INPUT PULSE REQUIREMENTS

FAMILY

Amplitude Rep. Rate t

W

t

R

t

F

MB 3.0V 1MHz 500ns 2.5ns 2.5ns

SWITCH POSITION

TEST SWITCH

t

PLZ

closed

t

PZL

closed

All other open