Datasheet M50LPW041 Datasheet (SGS Thomson Microelectronics)

Page 1
3V Supply Low Pin Count Flash Memory
SUPPLY VOLTAGE
= 3V to 3.6V for Program, Erase and
CC
Read Operations
= 12V for Fast Program and Fast Erase
PP
LOW PIN COUNT (LPC)
– Standard Interface for embedded operation
with PC Chipsets that are without automap­ping memory features
ADDRESS/ADDRESS MULTIPLEXED
– A/A Mux Interface for programming equip-
ment compatibility
LOW PIN COUNT (LPC) HARDWARE
INTERFACE MODE – 5 Signal Communication Interface supporting
Read and Write Operations
– Hardware Write Protect Pins for Block Pro-
tection – Register Based Read and Write Protection – 5 Additional Ge neral Purp ose I nputs f or pla t-
form design flexibility – Synchronized with 33MHz PCI clock
BYTE PROGRAMMING TIME
– Single Byte Mode: 10µs (typical) – Quadruple Byte Mode: 2.5µs (typical)
8 UNIFORM 64 Kbyte MEMORY BLOCKS
PROGRAM/ERA SE CON TROLLER
– Embedded Byte Program and Block/Chip
Erase algorithms – Status Register Bits
PROGRAM and ERASE SUSPEND
– Read other Blocks during Program/Erase
Suspend – Program other Blocks during Erase Suspend
FOR USE in PC BIOS APPLICATIONS
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h – Device Code: 3Ch
M50LPW041
4 Mbit (512Kb x8, Un iform B lock )
PRELIMINARY DATA
PLCC32 (K)
TSOP40 (N)
10 x 20mm
Figure 1. Logic Diagram (LPC Interface)
V
ID0-ID3
GPI0-
GPI4
LFRAME
CLK
IC
RP
INIT
V
4
5
M50LPW041
V
CC
SS
PP
4
LAD0­LAD3
WP
TBL
AI05785
September 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/37
Page 2
M50LPW041
Figure 2. Logic Diagram (A/A Mux Interface)
V
A0-A10
RC
IC
W
RP
V
11
M50LPW041
G
V
CC
SS
PP
8
DQ0-DQ7
RB
AI05786
DESCRIPTION
The M50LPW041 is a 4 Mbit (512Kb x8) non­volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast pro gramming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times.
The memory is divided into blocks that can be erased independently so it is pos sible to pres erve valid data while old data is erased. Blocks can be protected individually to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the m emory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Two different bus interfaces are supported by t he memory. The primary interface is the Low Pin Count (or LPC) Standard Interface. This has been
Figure 3. PLCC Connections
A/A Mux A/A Mux
A7 A6 A5 A4 A3 A2 A1 A0
DQ0
Note: Pins 27 and 28 are not internally connected.
GPI1 GPI0
WP
TBL
ID3 ID2 ID1 ID0
LAD0
GPI2
9
LAD1
DQ1
RPA8VPPV
A9
RP
VPPV
GPI3
1
32
M50LPW041
17
SS
V
V
SS
RFU
LAD3
DQ3
DQ4
LAD2
DQ2
CC
CC
RC
CLK
RFU
DQ5
A10
GPI4
25
RFU
DQ6
IC (VIL) NC NC V
SS
V
CC
INIT LFRAME RFU RFU
IC (VIH) NC NC V
SS
V
CC
G W RB DQ7
A/A MuxA/A Mux
AI05788
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Page 3
Figure 4. TSOP Connections
M50LPW041
NC
IC (VIH)
NC NC NC NC
A10
NC RC
V
CC
V
PP
A/A Mux
RP NC NC
A9 A8 A7 A6 A5 A4 A3
NC
IC (VIL)
NC NC INIT NC RFU NC
GPI4
NC
CLK
V
CC
V
PP
RP NC
NC GPI3 GPI2 LAD0 GPI1 ID0 GPI0
WP
TBL
1
10
M50LPW041
11
20 21
40
31 30
V V LFRAME
RFU RFU RFU RFU V V V LAD3 LAD2 LAD1
ID1 ID2 ID3
SS CC
CC SS SS
V
SS
V
CC
W G RB DQ7 DQ6 DQ5 DQ4 V
CC
V
SS
V
SS
DQ3 DQ2 DQ1 DQ0 A0 A1 A2
A/A Mux
AI06872
designed to remove the need for the ISA bus in current PC Chipsets; the M50LPW041 acts as the PC BIOS on the Low P in Count bus for these P C Chipsets.
The secondary interface, the Address/Address Multiplexed (or A/A Mux) Int erface, is design ed t o be compatible with current Flash Programmers for production line programming prior to fitting to a PC Motherboard.
The memory is offered in a PLCC32 or TSOP40 (10mm x 20mm) package and is supplied with all the bits erased (set to 1).
System Memory Mapping
The LPC address sequence is 32 bits long. The M50LPW041 responds to addresses mapped to the top of the 4 GByte memory space, from FFFF FFFFh. Address bits A31-A24 must be set to 1. A23 is set to 1 for array access, and to 0 for register access.
The M50LPW041 also responds to addresses mapped to the bottom of the 4 GByte memory space, from 0000 0000h. Address bits A31-A24 must be set to 0. A23 is set to 0 for array access, and to 1 for register access.
For A22-A19, see Table 2. A18-A0 are for array addresses.
Table 1. Signal Names (LPC Interface) Memory
LAD0-LAD3 Input/Output Communications LFRAME ID0-ID3 Identification Inputs GPI0-GPI4 General Purpose Inputs IC Interface Configuration RP INIT CLK Clock TBL WP
RFU
V
CC
V
PP
V
SS
NC Not Connected Intern ally
Input Communication Frame
Interface Reset CPU Reset
Top Block Lock Write Protect Reserved for Future Use. Leave
disconnected or set at V Supply Voltage Optional Supply Voltage for Fast
Erase Operations Ground
or VIH.
IL
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Page 4
M50LPW041
SIGNAL DESCRIPTIONS
There are two different bus interfaces available on this part. The active interface is selected before power-up or during Reset using the Interface Con­figur a tion Pin, IC.
The signals for each interface are discussed in the Low Pin Count (LPC) Signal Descriptions section and the Address/Address M ultiplexed (A/A Mux) Signal Descriptions section below. The supply sig­nals are discussed in the Supply S ignal Descrip­tions section below.
Low Pin Count (LPC) Signal Descriptions
For the Low Pin Count (LPC) Interface see Figure 1, Logic Diagram, and Table 1, Signal Names.
Input/Output Communications (LAD0-LAD3). All Input and Output Communication with the memory take place on these pi ns. Addresses and Data for Bus Read and Bus W rite operations are en coded on these pins.
Input Communication Frame (LFRAME
Input Communication Frame (LFRAME
). The
) signals the start of a bus operation. When Input Commu­nication Frame is Low, V
, on the rising edge of
IL
the Clock a new bus operat ion is in itiated. If Input Communication Frame is L ow, V
, during a bus
IL
operation then the operation is aborted. When In­put Communication Frame is High, V
, the cur-
IH
rent bus operation is proceeding or the bus is idle. Identification Inputs (ID0-ID3). The Identification
Inputs (ID0-ID3) allow to address up to 16 memories on a bus. The value on addresses A19­A22 is compared to the hardware strapping on the ID0-ID3 pins to select which memory is being addressed, as shown in Table 2.
General Purpose Inputs (GPI0-GPI4). The Gener­al Purpose Inputs can be used as digital inputs for the CPU to read. The General Purpose Input Reg­ister holds the values on these pins. The pins must have stable data from before the start of the cycle that reads the General Purpose Input Register un­til after the cycle is complete. These pins must not be left to float, they should be driven Low, V High, V
.
IH
IL,
or
Interface Configuration (IC). The Interface Con­figuration input selects whether the Low Pin Count (LPC) or the Address/Address Multiplexed (A/A Mux) Interface is used. The chosen interface must be selected before power-up or during a Reset and, thereafter, cannot be change d. The state of the Interface Configuration, IC, should not be changed during operation.
Table 2. Memory Identification Input Configuration
Memory Number
1 (Boot)
2 3 4 5 6 7 8
9 10 11 12 13 14 15 16
ID2 ID2 ID1 ID0
or floating VIL or floating VIL or floating VIL or floating
V
IL
V
or floating VIL or floating VIL or floating V
IL
V
or floating VIL or floating V
IL
V
or floating VIL or floating V
IL
V
or floating V
IL
V
or floating V
IL
V
or floating V
IL
V
or floating V
IL
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
IH IH
IH IH
VIL or floating VIL or floating VIL or floating VIL or floating VIL or floating V VIL or floating V VIL or floating V
V
IH
V
IH
V
IH
V
IH
IH IH
VIL or floating VIL or floating VIL or floating V
V
IH
V
IH
IH IH
VIL or floating VIL or floating VIL or floating V
V
IH
V
IH
VIL or floating
VIL or floating
VIL or floating
VIL or floating
Top Bottom
A 22A 21A 20A 19A 22A 21A 20A
11110001
IH
V
IH
IH
V
IH
IH
V
IH
IH
V
IH
11100000 11010011 11000010 10110101 10100100 10010111 10000110 01111001 01101000 01011011 01001010 00111101 00101100 00011111 00001110
19
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M50LPW041
Table 3. System Memory Map
A31:24
Top FFh 1 0
Bottom 00h 0 1
A23
Array Register
To select the Low Pin Count (LPC) Interface the Interface Configuration pin should be left to float or driven Low, V
; to select the Address/Address
IL
Multiplexed (A/A Mux) Interface t he pin should be driven High, V included with a value of R current of I
. An internal pull-down resistor is
IH
through each pin when pulled to VIH;
LI2
; there will be a leakage
IL
see Table 21.
Interface Reset (RP
). The Interface Reset (RP)
input is used to reset the memory. When Interface Reset (RP
) is set Low, VIL, the memor y i s i n R ese t mode: the outputs are put to high impedance and the current consumption is minimized. When RP set High, V
, the memory is in no rmal operat ion.
IH
is
After exiting Reset mode, the memory enters Read mode.
CPU Reset (INIT
). The CPU Reset, INIT, pin is
used to Reset the memory when the CPU is reset. It behaves identically to Interface Reset, RP
, and the internal Reset lin e is the logical OR (elec tric al AND) of RP
and INIT.
Clock (CLK). The Clock, CLK, input is used to clock the signals in and out of the Input/Output Communication Pins, LAD0-LAD3. The Clock conforms to the PCI specification.
Top Block Lock (TB L
). The Top Block Lock
input is used to pre vent the Top Block (Block 7) from being chan ged. When Top Block Loc k, TBL is set Low, V
, Program and Block Erase
IL
operations in the Top Block have no effect, regardless of the state of the Lock Register. When Top Block Lock, TBL
, is set High, VIH, the protection of the Block is determined by the Lock Register. The state of Top Block Lock, TBL
, does not affect the protection of the Main Blocks (Blocks 0 to 6).
Top Block Lock, TBL
, must be set prior to a Pro­gram or Block Erase operation is initiated and must not be changed until the operation completes or unpredictable results may occur. Care should be taken to avoid unpredictable behavior by changing TBL
Write Protect (WP
during Program or Erase Suspend.
). The Write Protect input is used to prevent the Main Blocks (Blocks 0 to 6) from being changed. W hen Write P rotect, WP set Low, V
, Program and Block Erase operations
IL
, is
in the Main Blocks have no effect, regardless of the state of the Lock Register. When Write Protect,
, is se t H i g h , VIH, the protection of the Block is
WP determined by the Lock Register. The state of Write Protect, WP
, does not affect the protection of
the Top Block (Block 7). Write Protect, WP
, must be set prior to a Program or Block Erase operation is initiated and must not be changed until the o peration completes or un­predictable results may occur. Care should be tak­en to avoid unpredictable behavior by changing WP
during Program or Erase Suspend.
Reserved for Future Use (RFU). These pins do not have assigned func t ions i n this revision of the part. They may be left disconnected or driven Low,
, or High, VIH.
V
IL
Address/Address Multiplexed (A/A Mux) Signal Descriptions
For the Address/Address Multiplexed (A/A Mux) Interface see Figure 2, Logi c Diagram, and Table 4, Signal Names.
Address Inputs (A0-A10). The Address Inputs are used to set the Row Address bits (A0-A10) and the Column Address bits (A11-A18). They are latched during any bus operation by the Row/ Col­umn Address Select input, RC
.
Data Inputs/Outputs (DQ0-DQ7). The Data In­puts/Outputs hold the data that is written to or read from the memory. They output the data s tored at the selected address during a Bus Read opera­tion. During Bus Write operations they represent the commands sent to the C ommand Interface of the internal state machine. The Data I nputs/Out­puts, DQ0-DQ7, are latched during a Bus Write operation.
Output Enable (G
). The Output Enable, G, con-
trols the Bus Read operation of the memory.
Write Enable (W
,
the Bus Write operation of the memory’s Com-
). The Write Enable, W, controls
mand Interf a c e .
Row/Column Address Select (RC
). The Row/
Column Address Select input selects whether the Address Inputs should be latched into the Row Address bits (A0-A10) or the Column Address bits (A11-A18). The Row Address bits are latched on the falling edge of RC
whereas the Column
Address bits are latched on the rising edge.
Ready/Busy Output (RB
). The Ready/Busy pin
gives the status of the memory’s Program/Erase Controller. When Ready/Busy is Low, V memory is busy with a Program or Erase operation and it will not accept any additional Program or Erase command except the Program/Erase Suspend command. When Ready/Busy is High, V
, the memory is ready for any Rea d, Program
OH
or Erase operation.
OL
, the
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Page 6
M50LPW041
Supply Signal Descriptions
The Supply Signals are the same for both interfac­es.
Supply Voltage. The VCC Supply Voltage
V
CC
supplies the power for all operations (Read, Pro­gram, Erase etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than t he Lockout Voltage, V
. This prevents Bus Write operations from
LKO
accidentally damaging the da ta during power up, power down and power surges. If the Program/ Erase Controller is programming or erasing during this time then the operation aborts and the memory contents being altered will be invalid. After V
becomes valid the Command Interface
CC
is reset to Read mode.
A 0.1µF capacitor should be connected betwe en the V
Supply Voltage pins and t he VSS Ground
CC
pin to decouple the current surges from the power supply. Both V
Supply Voltage pins must be
CC
connected to the power supply. The PCB track widths must be sufficient to carry the currents required during program and erase operations.
Optional Supply Voltage. The VPP Optional
V
PP
Supply Voltage pin is used to select the Fast Program (see the Quadruple Byte Program Command desc ription) and F ast Erase options of the me mor y . V V
Fast Program (if a Quadruple Byte Program
PPH
can be left floating. When VPP=
PP
Command is performed) and Fast Erase operations are used.
should not be set to V
V
PP
for more than 80
PPH
hours during the life of the memory.
V
Ground. VSS is the reference for all t he volt-
SS
age measurements.
BUS OPERATIONS
The two interfaces have similar bus operations but the signals and timings are completely different. The Low Pin Count (LPC) Interface is the usual interface and all of t he functionality of the part is available through this interface. Only a subset of functions are available through the Address/ Address Multiplexed (A/A Mux) Interface.
Follow the section Low Pin Count (LPC) Bus Operations below and the section Address/ Address Multiplexed (A/A Mux) Interface Bus Operations below for a description of the bus operations on each interface.
Low Pin Count (LPC) Bus Operations
The Low Pin Count (LPC) Interface consists of four data signals (LAD0-LAD3), one control line (LFRAME
) and a clock (CLK). In addition protection against accidental or malicious data corruption can be achieved using two further signals (TBL
and WP). Finally two reset signals
Table 4. Signal Names (A/A Mux Interface)
IC Interface Configuration A0-A10 Address Inputs DQ0-DQ7 Data Inputs/Outputs G W RC RB RP V
CC
V
PP
V
SS
NC Not Connected Intern ally
Output Enable Write Enable Row/Column Address Select Ready/Busy Output Interface Reset Supply Voltage Optional Supply Voltage for Fast
Program and Fast Erase Operations
Ground
(RP and INIT) are available to put the memory into a known state.
The data signals, control signal and clock are designed to be compatible with PCI electrical specifications. The interface operates with clock speeds up to 33MHz.
The following operations can be performed using the appropriate bus cycles: Bus Read, Bus Write, Standby, Reset and Block Protection.
Bus Read. Bus Read operations read from the memory cells, specific registers in the Command Interface or Low Pin Count Registers. A valid Bus Read operation starts when Input Communication Frame, LFRAME
, is Lo w, VIL, as Clock rises and the correct Start cycle is on LAD0-LAD3. On the following clock cycles the Host will send the Cycle Type + Dir, Address and other control bits on LAD0-LAD3. The memory responds by outputting Sync data until the wait-states have elapsed followed by Data0-Data3 and Data4-Data7.
Refer to Table 7, LPC Bus Read Field Definitions, and Figure 5, LPC Bus Read Waveforms, for a de­scription of the Field definitions for each clock cy­cle of the transfer. See Table 23, LPC Interface AC Signal Timing Characteristics and Fi gure 10, LP C Interface AC Signal Timing Waveforms, for details on the timings of the signals.
Bus Write. Bus Write operations write to the Command Interface or Low Pin Count Registers. A valid Bus Write operation starts when Input
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Page 7
M50LPW041
Table 5. Absolute Maximum Ratings
Symbol Parameter Value Unit
T
A
T
BIAS
T
STG
(2)
V
IO
V
CC
V
PP
Note: 1. Exc ept for the rating "Operating T em perature R ange", str esses above those listed in the T able "Absol ute Maxim um Ratings " may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indi cated in t he Operating sect i ons of thi s specifi cation i s not impl i ed. Exposure to Absolute M aximum Rating c ondi­tions for extended per iods may aff ect device reliabilit y. Refer also to the STMicroel ectronics SURE Program an d other relevan t qual ­ity docum en ts .
2. Minimum Vo l tage may undershoot to -2V and for less than 20ns duri ng trans iti ons. Maxim um Voltage may overshoot t o V and for less th an 20ns duri ng t ransitions.
Ambient Operating Temperature (Temperature Range Option 1) 0 to 70 °C
Temperature Under Bias –50 to 125 °C Storage Temperature –65 to 150 °C Input or Output Voltage Supply Voltage –0.6 to 4 V Program Voltage –0.6 to 13 V
Communication Frame, LFRAME, is Low, VIL, as Clock rises and the correct Start cycle is on LAD0­LAD3. On the following Clock cycles the Host will send the Cycle Type + Dir, Add ress, other c ontrol bits, Data0-Data3 and Data4-Data7 on LAD0­LAD3. The memory outputs Sync data until the wait-states have elapsed.
Refer to Table 8, LPC Bus Write Field Definitions, and Figure 6, LPC Bus Write Waveforms, for a description of the Field definitions for each clock cycle of the transfer. See Table 23, LPC Interface AC Signal Timing Characteristics and Figure 10, LPC Interface AC Signal Timing Wa veforms, for details on the timings of the signals.
Bus Abort. The Bus Abort operation can be used to immediately abort the current bus operation. A Bus Abort occurs when LFRAME V
, during the bus o peration; the m emory wi ll tri-
IL
state the Input/Output Communication pins, LAD0-LAD3.
Note that, during a Bus Write operation, the Command Interface starts executing the command as soon a s the data is f ully received; a Bus Abort during the final TAR cycles is not guaranteed to abort the command; the bus, however, will be released immediately.
Standby. When LFRAME
is High, VIH, the memory is put into Standb y mode where LA D0­LAD3 are put into a high-impedance state and the Supply Current is reduced to the Standby level,
.
I
CC1
Reset. During Reset mode all internal circuits are switched off, the memory is deselected and the outputs are put in high-impedance. The memory is in Reset mode when Interface Reset, RP Rese t, IN IT
, is Low, VIL. RP or IN IT must be held
(1)
is driven Low,
, or CPU
Low, V
, for t
IL
–0.6 to V
. The memory resets to Read
PLPH
CC
+ 0.6
V
CC
+2V
mode upon return from Res et mo de and the Lock Registers return to their default states regardless of their state before Reset, see Table 16. If RP INIT
goes Low, VIL, during a Program or Erase
or
operation, the operation is aborted and the memory cells affected no longer contain valid data; the memory can take up to t
PLRH
to abort a
Program or Erase operation. Block Protection. Block Protection can be
forced using the signals Top Block Lock, TBL Write Protect, WP
, regardless of the state of the
, and
Lock Registers.
Address/Address Multiplexed (A/A Mux) Bus Operations
The Address/Address Multiplexed (A/A Mux) Interface has a more traditional style interface. The signals consist of a multiplexed address signals (A0-A10), data signals, (DQ0-DQ7) and three control signals (RC signal, RP
, can be used to reset the memory.
, G, W). An additional
The Address/Address Multiplexed (A/A Mux) Interface is included for use by Flash Programming equipment for faster factory programming. Only a subset of the features available to the Low Pin Count (LPC) Interface are available; these include all the Commands but exclude the Security features and other registers.
The following operations can be performed using the appropriate bus cycles: Bus Read, Bus Write, Output Disable and Reset.
When the Address/Address Multiplexed (A/A Mux) Interface is selected all the blocks are unprotected. It is not possible to protect any blocks through this interface.
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Page 8
M50LPW041
Table 6. Block Addresses
Size
(Kbytes)
64 70000h-7FFFFh 7 Top Block 64 60000h-6FFFFh 6 Main Block 64 50000h-5FFFFh 5 Main Block 64 40000h-4FFFFh 4 Main Block 64 30000h-3FFFFh 3 Main Block 64 20000h-2FFFFh 2 Main Block 64 10000h-1FFFFh 1 Main Block 64 00000h-0FFFFh 0 Main Block
Note: For A19 value, refer to Table 2.
Address Range
Block
Number
Block Type
Bus Read. Bus Read operations are used to
output the contents of the Memory Array, the Electronic Signature and the Status Register. A valid Bus Read operation begins by latching the Row Address and Column Address signals into the memory using the Address Inputs, A0-A10, and the Row/Column Address Select RC Write Enable (W be High, V
) and Interface Reset (RP) must
, and Output Enable, G, Low, VIL, in
IH
. Then
order to perform a Bus Read operation. The Data Inputs/Outputs will output the value, see Figure 12, A/A Mux Interface Read AC Waveforms , and Table 25, A/A Mux Interface Read AC Characteristics, for details of when the output becomes valid.
Bus Write. Bus Write operations write to the Command Interface. A valid Bus Write operation begins by latching the Row Address and Column Address signals into the memory using the Address Inputs, A0-A10, and the Row/Column Address Select RC the Data Inputs/Outputs; Output Enable, G Interface Reset, RP Enable, W
, must be Low, VIL. The Data Inputs/
. The data should be set up on
, and
, must be High, VIH and Write
Outputs are latched on the rising edge of Write Enable, W
. See Figure 13, A/A Mux Interface Write AC Waveforms, and Table 26, A/A Mux Interface Write AC Characteristics, for details of the timing requirements.
Output Disa bl e . The data outputs are high-im­pedance when the Output Enable, G
, is at VIH.
Reset. During Reset mode all internal circuits are switched off, the memory is deselected and the outputs are put in high-impedance. The memory is in Reset mode when RP held Low, V
for t
IL
is Low, VIL. RP must be
. If RP is goes Low, VIL,
PLPH
during a Program or Erase operation, the operation is aborted and the memory cells affected
no longer contain valid data; the memory can take up to t
to abort a Program or Erase operation.
PLRH
COMMAND INTERFACE
All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations.
After power-up or a Reset operation the memory enters Read mode.
The commands are summarized in Table 12, Commands. Refer to Tab le 1 2 in conjun ction with the text descriptions below.
Read Memory A rray Command. The Read Mem­ory Array command returns the memory to its Read mode where it behaves like a ROM or EPROM. One Bus Write cycle is required to issue the Read Memory Array command and return the memory to Read mode. Once the command is is­sued the memory remains in Read mode until an­other command is issued. From Read mode Bus Read operations will access the memory array.
While the Program/Erase Controller is executing a Program or Erase operation the m emory will not accept the Read Memory Array command until the operation completes.
Read Statu s Registe r Co mm an d . The Read Sta­tus Register command is used to read the Status Register. One Bus Write cycle is required to issue the Read Status Register command. Once the command is issued subsequent Bus Read opera­tions read the Status Register until another com­mand is issued. See the section on the Status Register for details on the definitions of the Status Register bits.
Read Electronic S i g natu re Comma nd . The Read Electronic Signature command is used to read the Manufacturer Code and the Device Code. One Bus Write cycle is required to issue the Read Electronic Signature command. Once the command is issued subsequent Bus Read operations read the Manufacturer Code or the Device Code until another command is issued.
After the Read Electronic Signature Command is issued the Manufacturer Code and Devi ce Code can be read using Bus Read op erations us ing the addresses in Table 11.
Program Command. The Program command can be used to program a value to one address in the memory array at a time. Two Bus Write operations are required to issue the command; the second Bus Write cycle latches the address and data in the internal state m achine and starts the Program/Erase Controller. Once the command is issued subsequent Bus R ead operations read the Status Register. See the section on the Status
8/37
Page 9
Table 7. LPC Bus Read Field Definitions
Clock Cycle
Number
Clock
Cycle
Count
Field
LAD0-
LAD3
Memory
I/O
M50LPW041
Description
1 1 START 0000b I
CYCTY
21
PE +
0100b I
DIR
3-10 8 ADDR XXXX I
11 1 TAR 1111b I
12 1 TAR
1111b
(float)
13-14 2 WSYNC 0101b O
15 1 RSYNC 0000b O
16-17 2 DATA XXXX O
18 1 TAR 1111b O
On the rising edge of CLK with LFRAME
Low, the contents of LAD0-LAD3 must be 0000b to indicate the start of a LPC cycle.
Indicates the type of cycle. Bits 3:2 must be 01b. Bit 1
indicates the direction of transfer: 0b for read. Bit 0 is ‘0’.
A 32-bit address phase is transferred starting with the most significant nibble first. See Tables 3, 2 and 6 for the field description.
The host drives LAD0-LAD3 to 1111b to indicate a turnaround cycle.
The LPC Flash Memory takes control of LAD0-LAD3 during
O
this cycle. The LPC Flash Memory drives LAD0-LAD3 to 0101b (short
wait-sync) for two clock cycles, indicating that the data is not yet available. Two wait-states are always included.
The LPC Flash Memory drives LAD0-LAD3 to 0000b, indicating that data will be available during the next clock cycle.
Data transfer is two CLK cycles, starting with the least significant nibble.
The LPC Flash Memory drives LAD0-LAD3 to 1111b to indicate a turnaround cycle.
19 1 TAR
1111b
(float)
Figure 5. LPC Bus Read Waveforms
CLK
LFRAME
LAD0-LAD3
Number of clock cycles
START
CYCTYPE
+ DIR
1182322
N/A
ADDR TAR SYNC DATA TAR
The LPC Flash Memory floats its outputs, the host takes control of LAD0-LAD3.
AI04429
9/37
Page 10
M50LPW041
Table 8. LPC Bus Write Field Definitions
Clock Cycle
Number
Clock
Cycle
Count
Field
LAD0-
LAD3
Memory
I/O
Description
1 1 START 0000b I
CYCTY
21
PE +
011Xb I
DIR
3-10 8 ADDR XXXX I
11-12 2 DATA XXXX I
13 1 TAR 1111b I
14 1 TAR
1111b
(float)
15 1 SYNC 0000b O
16 1 TAR 1111b O
17 1 TAR
1111b
(float)
N/A
On the rising edge of CLK with LFRAME
Low, the contents of LAD0-LAD3 must be 0000b to indicate the start of a LPC cycle.
Indicates the type of cycle. Bits 3:2 must be 01b. Bit 1
indicates the direction of transfer: 1b for write. Bit 0 is don’t care (X).
A 32-bit address phase is transferred starting with the most significant nibble first. See Tables 3, 2 and 6 for the field description.
Data transfer is two cycles, starting with the least significant nibble.
The host drives LAD0-LAD3 to 1111b to indicate a turnaround cycle.
The LPC Flash Memory takes control of LAD0-LAD3 during
O
this cycle. The LPC Flash Memory drives LAD0-LAD3 to 0000b,
indicating it has received data or a command. The LPC Flash Memory drives LAD0-LAD3 to 1111b,
indicating a turnaround cycle. The LPC Flash Memory floats its outputs and the host takes
control of LAD0-LAD3.
Figure 6. LPC Bus Write Waveforms
CLK
LFRAME
START
1182212
10/37
LAD0-LAD3
Number of clock cycles
CYCTYPE
+ DIR
ADDR DATA TAR SYNC TAR
AI04430
Page 11
Table 9. A/A Mux Bus Operations
Operation G W RP
Bus Read Bus Write Output Disable Reset
V
IL
V
IH
V
IH
V
or V
IL
IH
V
IH
V
IL
V
IH
VIL or V
Table 10. Manufacturer and Device Codes
Operation G
Manufacturer Code Device Code
V
IL
V
IL
W RP A18-A1 A0 DQ7-DQ0
V
IH
V
IH
M50LPW041
V
PP
V
IH
V
IH
V
IH
IH
V
IL
V
IH
V
IH
Don’t Care Data Output
Float or VCC or V
Don’t Care Hi-Z Don’t Care Hi-Z
V
IL
V
IL
PPH
V
V
IL
IH
DQ7-DQ0
Data Input
20h
3Ch
Register for details on the definitions of the Status Register bits.
If the address falls in a pro tected block then the Program operation will abort, the data in the memory array will no t be changed and the S tatus Register will output the error.
During the Program operation the memory will only accept the Read Status Register command and the Program/Erase Suspend command. All other commands will be ignored. Typical Program times are given in Table 13.
Note that the Program command cannot change a
bit set at ‘0’ back to ‘1’ and attempting to do so will not cause any modification on its value. One of the Erase commands must be used to set all of the bits in the block to ‘1’.
See Figure 14, Program Flowchart and Pseudo Code, for a suggested flowchart on using the Program command.
Quadruple Byte Program Command. The Qua­druple Byte Program Comman d c an be only used in A/A Mux mode to program four adjacent bytes in the memory array at a time. The four bytes must differ only for the addresses A0 and A1. Programming should not be attempted when V is not at V
is below V
if V
PP
. The operation can also be executed
PPH
, but result could be uncertain.
PPH
PP
Five Bus Write operations are required to issue the command. The second, the third and the fourth Bus Write cycle latches respectively the address and data of the first, the second and the third byte in the internal state machine. The fifth Bus Write cycle latches the address and data of the fourth byte in the internal state machine and starts the Program/Erase Controller. Once the command is issued subsequent Bus R ead operations read the Status Register. See the section on the Status
Register for details on the definitions of the Status Register bits.
During the Quadruple Byte Program operation the memory will only accept the Read Status register command and the Program/Erase Suspe nd com­mand. All other commands will be ignored. Typical Quadruple Byte Program times are given in Table
13. Note that the Quadruple Byte Program comm and
cannot change a bit set to ‘0’ back to ‘1’ and attempting to do so will not cause any modification on its value. One of the Erase commands must be used to set all of the bits in the block to ‘1’.
See Figure 15, Quadruple Byte Program Flow­chart and Pseudo Code, for a suggested flowchart on using the Quadruple Byte Program command.
Chip Erase Command. The Chip Erase Com­mand can be only used in A/A Mux mode to erase the entire chip at a time. Erasing should not be at­tempted when V can also be executed if V
is not at V
PP
PPH
is b elow V
PP
. The operation
, but re-
PPH
sult could be uncertain. Two Bus Write operations are required to issue the com mand and start the Program/Erase Controller. Once the command is issued subsequent Bus R ead operations read the Status Register. See the section on the Status Register for details on the definitions of the Status Register bits. During the Chip Erase operation the memory will only accept the Read Status Register command. All other commands will be ignored. Typical Chip Erase times are given in T able 13. The Chip Erase command sets all of the bits in the memory to ‘1’. See Figure 17, Chip Erase Flow­chart and Pseudo Code, for a suggested flowchart on using the Chip Erase command.
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M50LPW041
Block Erase Command. The Block Erase com-
mand can be used to erase a block. Two Bus Write operations are required to issue the command; the second Bus Write cycle latches the block address in the internal stat e machine and starts th e Pro­gram/Erase Controller. Once the command is is­sued subsequent Bus Read ope rations read the Status Register. See the section on the Status Register for details on the definitions of the Status Register bits.
If the block is protected then the Block Erase operation will abort, the data in the block will not be changed and the Status Register will output the error.
During the Block Erase operation the me mory wi ll only accept the Read Status Register command and the Program/Erase Suspend command. All other commands will be ignored. Typical Block Erase times are given in Table 13.
The Block Erase command sets all of the bits in
the block to ‘1’. All previous data in the block is lost.
See Figure 18, Block Erase Flowchart and Pseudo Code, for a suggested flowchart on using the Block Erase command.
Clear Status Register Command. The Clear St a­tus Register command can be used to reset bits 1, 3, 4 and 5 in the Status Register to ‘0’. One Bus Write is required to issue the Clear Status Register command. Once the command is issued the mem­ory returns to its previous mode, subs equent Bus Read operations continue to output the same data.
The bits in the Status Register are stic ky and do not automatically return to ‘0’ when a new Program or Erase command is issued. If an error occurs then it is essential to clear any error bits in the Sta­tus Register by issuing the Clear Status Register command before attempting a new Program or Erase command.
Program/Erase Suspend Command. The Pro­gram/Erase Suspend command can be used to pause a Program or B lock Erase operation. O ne Bus Write cycle is required to issue the Program/ Erase Suspend command and pause the Pro­gram/Erase Controller. Once the command is is­sued it is necessary to poll the Program/Erase Controller Status bit to find out when the Program/ Erase Controller has paused; no other commands will be accept ed until the Pro gram/ Erase Cont rol­ler has paused. After the Program/Erase Cont rol­ler has paused, the memory will continue to output the Status Register until another command is is­sued.
During the polling period between issuing the Program/Erase Suspend command and the Program/Erase Controller pausing it is possible for the operation to complete. Once Program/Erase
Table 11. Read Electronic Signature
Code Address Data
Manufacturer Code 00000h 20h Device Code 00001h 3Ch
Note: For A19 v al ue, see Tabl e 2.
Controller Status bit indicates that the Program/ Erase Controller is no longer active, the Program Suspend Status bit or the Erase Suspend Status bit can be used to d etermine if the opera tion has completed or is suspended. For timing on the delay between issuing the Program/Erase Suspend command and the Program/Erase Controller pausing see Table 13.
During Program/Erase Suspend the Read Memory Array, Read Status Register, Read Electronic Signature and Program/Erase Resume commands will be accepted by the Command Interface. Additionally, if the suspe nded operation was Block Erase then the Program com mand will also be accepte d; only the blocks no t being erased may be read or programmed correctly.
See Figures 16, Program Suspend & Resume Flowchart and Pseudo Code, and 19, Erase Suspend & Resume Flowchart and Pseudo Code, for suggested flowcharts on using the Program/ Erase Suspend command.
Program / Erase Resum e Command. The Pro­gram/Erase Resume com m and c an be used to re­start the Program/Erase Controller after a Program/Erase Suspend has p aused it. One Bus Write cycle is required to issue the Program/Erase Resume command. O nc e the command is iss ued subsequent Bus Read operations read the Status Register.
STATUS REGISTER
The Status Register provides information on the current or previous Program or Erase operation. Different bits in the Status Register convey different information and errors on the operation.
To read the Status Register the Read Status Register command can be issued. The Status Register is automatically read after Program, Erase and Program/Erase Resume commands are issued. The Status Register c an be read from any address.
The Status Register bits are summarized in Table 14, Status Register Bits. Refer to Table 14 in con­junction with the text descriptions below.
Program/Erase Controller Status (Bit 7). The Pro­gra m/Erase Controller Status bit indicates whether the Program/Erase Controller is active or inactive. When the Program/Erase Controller Status bit is
12/37
Page 13
M50LPW041
Table 12. Commands
Bus Write Operations
Command
Cycles
Read Memory Array 1 X FFh Read Status Register 1 X 70h
Read Electronic Signature
1X 90h 1X 98h 2X 40hPAPD
Program
2X 10hPAPD Quadruple Byte Program 5 X 30h Chip Erase 2 X 80h Block Erase 2 X 20h BA D0h Clear Status Register 1 X 50h Program/Erase Suspend 1 X B0h Program/Erase Resume 1 X D0h
1X 00h
1X 01h Invalid/Reserved
1X 60h
1X2Fh
1XC0h
Note: X Don’t Care, PA Program Address, PD Program Data, A
Read Memory Array. After a Read M em ory Array command, read the memory as normal unti l another comm and is issued. Read Status Register. After a Read Status Register command, read the Status Register as normal until another command is issued. Read Electronic Signature. Af t er a Read Electronic Signature command, read Manufacturer Code, Device Code until another co m -
mand is issued. Block Erase, Program. After th ese com man ds re ad t he S tat us Re gist er un t il th e comm an d comp l etes and an othe r c omma nd is is ­sued. Quadruple Byte Program. This command is only valid in A/A Mux mode. Addresses A
differing only for address bit A0 and A1. After this command read the Status Register until the command completes and another com­mand is issued.
Chip Er ase. This command is only valid in A /A Mux mode. After this command read the St atus Registe r until t he c ommand complete s and another command is issued.
Clear Status Register. After the Clear St atus Register command bits 1, 3, 4 and 5 in the Stat us Register a re reset to ‘0’. Program/Erase Susp end. After the Program /Erase Sus pend command has been accept ed, issue Read Mem ory Array, Read Status
Register, Program (during Era se suspend ) and Program/ Erase resum e commands. Program/Erase Resu me. After the Program/Erase Resume command the suspended Program/Erase operation resumes, read the
Status Register unti l the Program/ E rase Contr ol l er completes and the mem ory returns to Read Mode.
Invalid/Reserved . Do not use In valid or Res erved commands.
1st 2nd 3rd 4th 5th
Addr Data Addr Data Addr Data Addr Data Addr Data
A
PD
1
X
10h
Consecut i ve Addresses, BA Any address in the Block.
1,2,3,4
A
PD
2
, A2, A3 and A4 must be consecutive addresses
1
A
PD
3
A
PD
4
13/37
Page 14
M50LPW041
Table 13. Program and Erase Times
= 0 to 70°C; VCC = 3.0 to 3.6V)
(T
A
Parameter Interface Test Condition Min
Byte Program 10 200
V
Quadruple Byte Program A/A Mux
Chip Erase A/A Mux
Block Program
Block Erase
Program/Erase Suspend to Program pause Program/Erase Suspend to Block Erase pause
Note: 1. TA = 25°C, VCC = 3.3V
2. This time is obt ai ned executi ng the Quadruple Byte Prog ram Comma nd.
3. Sampled only, not 100% tested.
(3)
A/A Mux
(3)
= 12V ± 5%
PP
V
= 12V ± 5%
PP
V
= 12V ± 5%
PP
< 12V – 5%
V
PP
= 12V ± 5%
V
PP
V
< 12V – 5%
PP
(1)
Typ
10 200
0.1
0.4 5 sec
0.75 8 sec
Max Unit
5sec
(2)
110sec
30
s
µ
s
µ
sec
5
5
s
µ
s
µ
‘0’, the Program/Erase Controller is active; when the bit is ‘1’, the Program/Erase Controller is inac­tive.
The Program/Erase Controller Status is ‘0’ imme­diately after a Program/Erase Su spend c om m and is issued until the Program/Erase Controller paus­es. After the Program/Erase Controller pauses the bit is ‘1’.
During Program and Erase operation the Pro­gram/Erase Controller Status bit can be pol led to find the end of the operation. The other bits in the Status Register should not be tested until the Pro­gram/Erase Controller completes the operation and the bit is ‘1’.
After the Program/Erase Cont roller completes its operation the Erase S tatus, Program Status and Block Protection Status bits should be tested for errors.
Erase Suspend Status (Bit 6). The Erase Sus­pend Status bit indicates that a Block E rase oper­ation has been suspended and is waiting to be resumed. The Erase Suspend Status should only be considered valid when the Program/Erase Controller Status bit is ‘1’ (Program/Erase Control­ler inactive); after a Program/Erase Suspend com­mand is issued the memory may still complete the operation rather than entering the Suspend mode.
When the Erase Suspend Status bit is ‘0’ the Pro­gram/Erase Controller is active or has com pleted its operation; when the bit is ‘1’ a Program/Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command.
When a Program/Erase Re sume command is is­sued the Erase Suspend Status bit returns to ‘0’.
Erase Status (Bit 5). The Erase Status bit can be used to identify if the memory has applied the maximum number of erase pulses to the block(s) and still failed to verify that the block(s) has erased correctly. The Erase Status bit should be read once the Program/Erase Controller Status bit is ‘1’ (Program/Erase Controller inactive).
When the Erase Status bit is ‘0’ the memory has successfully verified that the block(s) has erased correctly; when the Erase Status bit is ‘ 1’ the P ro­gram/Erase Controller has applied the maximum number of pulses to the block(s) an d still failed to verify that the block(s) has erased correctly.
Once the Erase Status bit is set to ‘1’ it can only be reset to ‘0’ by a Clear Status Register command or a hardware reset. If it is set to ‘1’ it should be reset before a new Program or Erase command is is­sued, otherwise the new command will appear to fail.
Program Status (Bit 4). The Program Status bit can be used to identify if the memory has applied the maximum number of program pulses to the byte and still failed to verify that the byte has pro­grammed correctly. The Program Status bit should be read once the Program/Erase Controller Status bit is ‘1’ (Program/Erase Controller inactive).
When the Program Status bit is ‘0’ the memory has successfully verified that the byte has pro­grammed correctly; when the Program Status bit is ‘1’ the Program/Erase Controller has applied the maximum number of pulses to the byte an d still failed to verify that the byte has program med c or­rectly.
14/37
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M50LPW041
Table 14. Status Register Bits
Operation Bit 7 Bit 6 Bit 5 Bit 4 Bit 2 Bit 1
(1)
Program active 0 Program suspended 1 Program completed successfully 1 Program failure due to Block Protection (LPC Interface only) 1 Program failure due to cell failure 1
Erase active 000000 Block Erase suspended 1 1 0000 Erase completed successfully 1 0 0000 Block Erase failure due to Block Protection (LPC Interface only) 1 0 0001 Erase failure due to failed cell(s) 1 0 1000
Note: 1. F or Program o perations during Erase Suspend Bit 6 is ‘1’, otherwise Bi t 6 is ‘0’.
X X X X X
0000
(1)
0010
(1)
0000
(1)
0001
(1)
0100
Once the Program Status bit is set to ‘1’ it can only be reset to ‘0’ by a Clear Status Register com­mand or a hardware reset. If it is set to ‘1’ it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail.
Reserved (Bit 3). This status bit is reserved for future use. Its value should be masked out when­ever the status register is read.
Program Suspend Status (Bit 2). The Program Suspend Status bit indicates that a Program oper­ation has been suspended and is waiting to be re­sumed. The Program Suspend Status should only be considered valid when the Program/Erase Controller Status bit is ‘1’ (Program/Erase Control­ler inactive); after a Program/Erase Suspend com­mand is issued the memory may still complete the operation rather than entering the Suspend mode.
When the Program Suspend Status bit is ‘0’ the Program/Erase Controller is active or has complet­ed its operation; when the bit is ‘1’ a Program/ Erase Suspend command has been issued and the memory is waiting for a Program/Erase Re­sume command.
When a Program/Erase Re sume command is is­sued the Program Suspend Status bit returns to ‘0’.
Block Protection Status (Bit 1). The Block Pro­tection Status bit can be used to identify if the Pro­gram or Block Erase operation has tried to modify the contents of a protected block. When the Block Protection Status bit is to ‘0’ no Program or Block Erase operations have been attempted to protect­ed blocks since the last Clear Status Register command or hardware reset; when the Block Pro-
tection Status bit is ‘ 1’ a Program or B lock Erase operation has been attempted on a protected block.
Once it is set to ‘1’ t he Block Protection Status bit can only be reset to ‘0’ by a Clear Status Register command or a ha rdware reset. If it is set to ‘1’ it should be reset before a ne w Program or Block Erase command is issued, otherwise the new command will appear to fail.
Using the A/A Mux Interface the Block Protection Status bit is always ‘0’.
Reserved (Bit 0). Bit 0 of the Status Register is reserved. Its value should be masked.
LOW PIN COUNT (LPC) INTERFACE CONFIGURATION REGISTERS
When the Low Pin Count Interface is selected sev­eral additional registe rs can be accessed. These registers control the protection status of the Blocks and read the General Purpose Input pins. See Ta­ble 15 for an example of the Register Configura­tion map, valid f or the boot mem ory, that is, ID0­ID3 can be left floating or driven Low, V
.
IL
Lock Registers
The Lock Registers control the protection status of the Blocks. Ea ch Bl o ck h as i ts own Lock Register. Three bits within each Lock Register control the protection of each block, the Write Lock Bit, the Read Lock Bit and the Lock Down Bit.
The Lock Registers can be read and written, though care should be taken when writing as, once the Lock D own Bit is set , ‘1’ , fu rther m odifications to the Lock Register cannot be made until cleared, to ‘0’, by a reset or power-up.
15/37
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M50LPW041
See Table 16 for details on the bit definitions of the Lock Registers.
Write Lock. The Write Lock Bit determines whether the contents of the Block can be modified (using the Program or Block Erase Command).
When the Write Lock Bit is set, ‘1’, the block is write protected; any operations that attempt to change the data in the block will fail and the Status Register will report the error. When the Write Lock Bit is reset, ‘0’, the block is not write protected through the Lock Register and may be modified unless write protected through some other means.
If Top Bloc k Lock, TB L Block (Block 7) is write protected and cannot be modified. Similarly, if Write Protect, WP V
, then the Ma in Blocks (Blocks 0 to 6) are write
IL
protected and cannot be modified. After power-up or reset the Write Lock Bit is al-
ways set to ‘1’ (write protected). Read Lock. The Read Lock bit determines
whether the contents of the Block can be read (from Read mode). When the Read Lock Bit is set, ‘1’, the block is read prot ected; an y operat ion that attempts to read the contents of the block will read 00h instead. When the Read Lock Bit is reset, ‘0’, read operations in the Block return the data pro­grammed into the block as expected.
After power-up or reset the Read Lock B it is al­ways reset to ‘0’ (not read protected).
Lock Down. The Lock Down Bit provides a mechanism for protecting software data from sim­ple hacking and malicious attack. When the Lock Down Bit is set, ‘1’, further modification to the Write Lock, Read Lock and Lock Down Bits cannot be performed. A reset or power-up is required be­fore changes to these bits can be made. When the Lock Down Bit is reset, ‘0’, the Write L ock, Read Lock and Lock Down Bits can be changed.
General Purpose Input Register
The General Purpose Input Register holds the state of the General Purpose Input pins, GPI0­GPI4. When this register is read, the state of these pins is returned. This register is read-only and writ­ing to it has no effect.
The signals on the General Purpose Input pins should remain constant throughout the whole Bus Read cycle in order to guarantee that the correct data is read.
, is Low, VIL, then the T op
, is Low,
16/37
Page 17
M50LPW041
Table 15. Low Pin Count Register Configuration Map
Mnemonic Register Name
T_BLOCK_LK Top Block Lock Register (Block 7) FF7F0002h 008F0002h 01h R/W T_MINUS01_LK Top Block [-1] Lock Register (Block 6) FF7E0002h 008E0002h 01h R/W T_MINUS02_LK Top Block [-2] Lock Register (Block 5) FF7D0002h 008D0002h 01h R/W T_MINUS03_LK Top Block [-3] Lock Register (Block 4) FF7C0002h 008C0002h 01h R/W T_MINUS04_LK Top Block [-4] Lock Register (Block 3) FF7B0002h 008B0002h 01h R/W T_MINUS05_LK Top Block [-5] Lock Register (Block 2) FF7A0002h 008A0002h 01h R/W T_MINUS06_LK Top Block [-6] Lock Register (Block 1) FF790002h 00890002h 01h R/W T_MINUS07_LK Top Block [-7] Lock Register (Block 0) FF780002h 00880002h 01h R/W
GPI_REG General Purpose Input Register FF7C0100h 008C0100h N/A R
Note: 1. Thi s map is referred to the boo t memory (I D0-ID3 fl oating or dri ven, Low).
(1)
Memory Address
Top Bottom
Default
Value
Access
17/37
Page 18
M50LPW041
Tabl e 16. Lock R egister Bit Defini t i ons
(1)
Bit Bit Name Value Function
7-3 Reserved
‘1’ Bus Read operations in this Block always return 00h.
2 Read-Lock
Bus read operations in this Block return the Memory Array contents. (Default
‘0’
value). Changes to the Read-Lock bit and the Write-Lock bit cannot be performed. Once a
‘1’
‘1’ is written to the Lock-Down bit it cannot be cleared to ‘0’; the bit is always reset
1 Lock-Down
to ‘0’ following a Reset (using RP Read-Lock and Write-Lock can be changed by writing new values to them. (Default
‘0’
value). Program and Block Erase operations in this Block will set an error in the Status
‘1’
Register. The memory contents will not be changed. (Default value).
or INIT) or after power-up.
0 Write-Lock
Program and Block Erase operations in this Block are executed and will modify the
‘0’
Block contents.
Note: 1. Applies to Top Block Lock Register (T_BLOCK_LK) and Top Block [-1] Lock Register (T_MINUS01_LK) to Top Block [-7] Lock Reg-
Table 17. General Purpose Input Regi s te r D ef i ni tion
ister (T_MINUS07_LK).
(1)
Bit Bit Name Value Function
7-5 Reserved
Input Pin GPI4 is at V
‘1’
4 GPI4
Input Pin GPI4 is at V
‘0’
Input Pin GPI3 is at V
‘1’
3 GPI3
Input Pin GPI3 is at V
‘0’
Input Pin GPI2 is at V
‘1’
2 GPI2
Input Pin GPI2 is at V
‘0’
Input Pin GPI1 is at V
‘1’
1 GPI1
Input Pin GPI1 is at V
‘0’
Input Pin GPI0 is at V
‘1’
0 GPI0
Input Pin GPI0 is at V
‘0’
Note: 1. App l i e s to t h e General Purpose Input Regis t er (GPI_REG).
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
18/37
Page 19
M50LPW041
Table 18. LPC Interface AC Measurement Conditions
Parameter Value Un it
V
Supply Voltage
CC
Load Capacitance (C
)
L
Input Rise and Fall Times
3.0 to 3.6 V 10 pF
1.4 ns
Input Pulse Voltages Input and Output Timing Ref. Voltages
Figure 7. LPC Interface AC Testing Input Output Waveforms
0.6 V
CC
0.2 V
CC
Input and Output AC Testing Waveform
IO < I
LO
Output AC Tri-state Testing Waveform
IO > I
LO
IO < I
0.4 V
LO
AI03404
0.2 V
CC
and 0.6 V
CC
0.4 V
CC
CC
V V
19/37
Page 20
M50LPW041
Table 19. A/A Mux Interface AC Measurement Conditions
Parameter Value Unit
V
Supply Voltage
CC
3.0 to 3.6 V Load Capacitance (C Input Rise and Fall Times
)
L
30 pF
10 ns
Input Pulse Voltages 0 to 3 V Input and Output Timing Ref. Voltages 1.5 V
Figure 8. A/A Mux I nte rfac e AC Testing In put Output Wav ef orm
3V
1.5V
0V
AI01417
Table 20. Impedance (T
= 25 °C, f = 1 MHz)
A
Symbol Parameter Test Condition Min Max Unit
(1)
C
IN
(1)
C
CLK
(2)
L
PIN
Note: 1. Sampled only, not 100% tested.
2. See PCI Specification.
Input Capacitance Clock Capacitance
Recommended Pin Inductance
V
= 0V
IN
V
= 0V
IN
312pF
13 pF
20 nH
20/37
Page 21
M50LPW041
Table 21. DC Characteristics
(T
= 0 to 70°C; VCC = 3.0 to 3.6V)
A
Symbol Parameter Interface Test Condition Min Max Unit
V V
V
V
V
(INIT)
IH
(INIT)
IL
I
LI
I
R
V
V
I
V
LKO
I
CC1
IH
IL
(2)
LI2
IL
OH
OL
LO
PPH
Input High Voltage
Input Low Voltage
Input High Voltage LPC 1.35
INIT
Input Low Voltage LPC –0.5
INIT Input Leakage Current
IC, IDx Input Leakage Current
IC, IDx Input Pull Low Resistor
Output High Voltage
Output Low Voltage
Output Leakage Curren t
VPP Voltage (Fast Program/Fast Erase)
(1)
VCC Lockout Volt age
Supply Current (Standby) LPC
LPC
A/A Mux
0.5 V
0.7 V
LPC –0.5
CCVCC
CCVCC
+ 0.5 + 0.3
0.3 V
CC
A/A Mux -0.5 0.8 V
V
+ 0.5
CC
0.2 V
CC
0V ≤ V
IC, ID0, ID1, ID2, ID3 = V
IN
≤ V
CC
CC
±10
µA
200 µA
20 100 k
LPC I
A/A Mux I
LPC
A/A Mux
0V ≤ V
= –500µA
OH
= –100µA
OH
I
= 1.5mA 0.1 V
OL
I
= 1.8mA
OL
≤ V
OUT
CC
0.9 V
V
CC
CC
– 0.4
CC
0.45 V ±10
µA
11.4 12.6 V
1.8 2.3 V
LFRAME
All other inputs 0.9 VCC to 0.1 V
= 0.9 V
CC
CC
100
µ
VCC = 3.6V, f(CLK) = 33MHz
V V
V
V V
V
V V
A
I
CC2
Supply Current (Standby) LPC
LFRAME
All other inputs 0.9 VCC to 0.1 V
= 0.1 V
CC
VCC = 3.6V, f(CLK) = 33MHz
= VCC max
Supply Current
I
CC3
I
CC4
I
CC5
I
PP
I
PP1
Note: 1. Sampled only, not 100% tested.
(Any internal operation active)
Supply Current (Read) A/A Mux Supply Current
(1)
(Program/Erase) VPP Supply Current
(Read/Standby) VPP Supply Current
(1)
(Program/Erase active)
2. Input leakag e currents include Hig h-Z output leakage for all bi -directi onal buffers wi th tri-state output s.
LPC
A/A Mux Program/Erase Controller Active 20 mA
V
CC
f(CLK) = 33MHz
= 0mA
I
OUT
G
= VIH, f = 6MHz
V
V
>
PP
CC
V
= V
PP
CC
V
= 12V ± 5%
PP
CC
10 mA
60 mA
20 mA
400
5
15 mA
21/37
A
µ
A
µ
Page 22
M50LPW041
Table 22. LPC Interface Clock Characteristics
(T
= 0 to 70°C; VCC = 3.0 to 3.6V)
A
Symbol Parameter Test Condition Value Unit
t
CYC
CLK Cycle Time
(1)
Min 30 ns
t
HIGH
t
LOW
CLK High Time Min 11 ns CLK Low Time Min 11 ns
Min 1 V/ns
CLK Slew Rate peak to peak
Max 4 V/ns
Note: 1. Devi ces on the PC I Bus must work with a ny clock frequency be tween DC an d 33MHz. Be l ow 16MHz dev i ces may be guarantee d
by design rather than tested. Refer to PCI Specification.
Figure 9. LPC Interface Clock Waveform
tCYC
tHIGH tLOW
0.6 V
CC
0.5 V
0.4 V
0.3 V
0.2 V
CC CC CC CC
0.4 VCC, (minimum)
p-to-p
AI03403
22/37
Page 23
Table 23. LPC Interface AC Signal Timing Characteristics
(T
= 0 to 70 °C; VCC = 3.0 to 3.6V)
A
Symbol
PCI
Symbol
Parameter Test Condition Value Unit
M50LPW041
t
CHQV
(1)
t
CHQX
t
CHQZ
t
AVCH
t
DVCH
t
CHAX
t
CHDX
Note: 1. The timing measurements for Active/Float transitions are defined when the current through the pin equals the leakage current spec-
ification.
2. Applies to all inputs except CLK.
t
t
t
CLK to Data Out
val
CLK to Active
on
(Float to Active Delay) CLK to Inactive
off
(Active to Float Delay)
t
su
Input Set-up Time
t
h
Input Hold Time
(2)
(2)
Min 2 ns
Max 11 ns
Min 2 ns
Max 28 ns
Min 7 ns
Min 0 ns
Figure 10. LPC Interface AC Signal Timing Waveforms
CLK
LAD0-LAD3
tCHQV
VALID OUTPUT DATA FLOAT OUTPUT DATA VALID INPUT DATA
tCHQZ tCHQX
tDVCH
tCHDX
VALID
AI04431
23/37
Page 24
M50LPW041
Table 24. Reset AC Characteristics
(T
= 0 to 70°C; VCC = 3.0 to 3.6V)
A
Symbol Parameter Test Condition Value Unit
t
PLPH
t
PLRH
t
PHFL
t
PHWL
t
PHGL
Note: 1. See Chapter 4 of the PCI Specif i cation.
RP or INIT Reset Pulse Width Min 100 ns
RP or INIT Low to Reset
or INIT Slew Rate
RP
(1)
RP or INIT High to LFRAME Low LPC Interface only Min 30 RP High to Write Enable or Output
Enable Low
Figure 11. Reset AC Waveforms
RP, INIT
W, G, LFRAME
Program/Erase Inactive Max 100 ns
Program/Erase Active Max 30
Rising edge only Min 50 mV/ns
A/A Mux Interface only Min 50
tPLPH
tPHWL, tPHGL, tPHFL
tPLRH
s
µ
s
µ
s
µ
RB
AI04432
24/37
Page 25
M50LPW041
Table 25. A/A Mux Interface Read AC Characteristics
(T
= 0 to 70°C; VCC = 3.0 to 3.6V)
A
Symbol Parameter Test Condition Value Unit
t
AVAV
t
AVCL
t
CLAX
t
AVCH
t
CHAX
t
CHQV
t
GLQV
t
PHAV
t
GLQX
t
GHQZ
t
GHQX
Note: 1. G may be delayed up to t
Read Cycle Time Min 250 ns Row Address Valid to RC Low Min 50 ns RC Low to Row Address Transition Min 50 ns Column Address Valid to RC high Min 50 ns RC High to Column Address Transition Min 50 ns
(1)
RC High to Output Valid Max 150 ns
(1)
Output Enable Low to Output Valid Max 50 ns RP High to Row Address Valid Min 1
Output Enable Low to Output Transition Min 0 ns Output Enable High to Output Hi-Z Max 50 ns Output Hold from Output Enable High Min 0 ns
– t
CHQV
after the ri si ng edge of RC without impact on t
GLQV
Figure 12. A/A Mux Interface Read AC Waveforms
tAVAV
CHQV
s
µ
.
A0-A10
RC
G
DQ0-DQ7
W
RP
ROW ADDR VALID NEXT ADDR VALID
tAVCL tAVCH
tCLAX tCHAX
tPHAV
COLUMN ADDR VALID
tCHQV
tGLQV tGLQX
tGHQZ tGHQX
VALID
AI03406
25/37
Page 26
M50LPW041
Table 26. A/A Mux Interface Write AC Characteristics
(T
= 0 to 70°C; VCC = 3.0 to 3.6V)
A
Symbol Parameter Test Condition Value Unit
t
WLWH
t
DVWH
t
WHDX
t
AVCL
t
CLAX
t
AVCH
t
CHAX
t
WHWL
t
CHWH
t
WHGL
t
WHRL
Write Enable Low to Write Enable High Min 100 ns Data Valid to Write Enable High Min 50 ns Write Enable High to Data Transition Min 5 ns Row Address Valid to RC Low Min 50 ns RC Low to Row Address Transition Min 50 ns Column Address Valid to RC High Min 50 ns RC High to Column Address Transition Min 50 ns Write Enable High to Write Enable Low Min 100 ns RC High to Write Enable High Min 50 ns Write Enable High to Output Enable Low Min 30 ns Write Enable High to RB Low Min 0 ns
26/37
Page 27
Figure 13. A/A Mux Interface Write AC Waveforms
M50LPW041
A0-A10
RC
W
G
RB
DQ0-DQ7
Write erase or program setup
R1
tAVCL
tWLWH
C1
tCLAX
tWHWL
Write erase confirm or valid address and data
R2 C2
tAVCH
tCHAX
D
IN1
tWHRL
Automated erase or program delay
tCHWH
D
IN2
tWHGL
tWHDXtDVWH
Read Status
Register Data
VALID SRD
Ready to write
another command
AI06817
27/37
Page 28
M50LPW041
Figure 14. Program Flow c hart and Ps e ud o C ode
Start
LPC
Interface
Only
Write 40h or 10h
Write Address
& Data
Read Status
Register
b7 = 1
YES
b4 = 0
YES
b1 = 0
YES
End
NO
NO
NO
NO
Suspend
Program to Protected
Block Error (1, 2)
YES
Suspend
Program
Error (1, 2)
Program command: – write 40h or 10h – write Address & Data (memory enters read status state after the Program command)
do: –read Status Register if Program/Erase Suspend command given execute suspend program loop
Loop
while b7 = 1
If b4 = 1, Program error: – error handler
If b1 = 1, Program to protected block error: – error handler
AI06818
Note: 1. A Status check of b1 (Protected Block) and b4 (Program Error) can be made after each Program operation by following the correct
command sequence.
2. If an error is found, the Stat us Registe r must be clea red before fu rt her Program / Erase Con troller operations.
28/37
Page 29
M50LPW041
Figure 15. Quadruple Byte Program Flowchart and Pseudo Code (A/A Mux Interface Only)
Start
Write 30h
Write Address 1
Write Address 2
Write Address 3
Write Address 4
Read Status
& Data 1
& Data 2
& Data 3
& Data 4
Register
b7 = 1
b4 = 0
(3)
(3)
(3)
(3)
YES
NO
NO
NO
Suspend
YES
Suspend
Program
Error (1, 2)
Loop
Quadruple Byte Program command: – write 30h – write Address 1 & Data 1 – write Address 2 & Data 2 – write Address 3 & Data 3 – write Address 4 & Data 4 (memory enters read status state after the Quadruple Byte Program command)
do: – read Status Register if Program/Erase Suspend command given execute suspend program loop
while b7 = 1
If b4 = 1, Program error: – error handler
(3) (3) (3) (3)
YES
End
Note: 1. A St atus check of b4 (Program Er ror) can be ma de after eac h Program operation by f ol l owing the correct command sequence.
2. If an error is found, the Stat us Register must be cleared befor e further Program/Erase Contr ol l er operations.
3. Address 1, Address 2, Address 3 and Address 4 must be consecuti ve addresse s differing only for addre ss bits A0 and A 1.
AI06819
29/37
Page 30
M50LPW041
Figure 16. Program Suspend and Resume Flowchart, and Pseudo Code
Start
Write B0h
Program/Erase Suspend command:
Write 70h
Read Status
Register
– write B0h – write 70h
do: – read Status Register
b7 = 1
YES
b2 = 1
YES
Write a read
Command
Read data from
another address
Write D0h
Program Continues
NO
NO
Program Complete
Write FFh
Read Data
while b7 = 1
If b2 = 0 Program completed
Program/Erase Resume command: – write D0h to resume the program – if the Program operation completed then this is not necessary. The device returns to Read as normal (as if the Program/Erase suspend was not issued).
AI03408
30/37
Page 31
Figure 17. Chip Erase Flowchart and Pseudo Code (A/A Mux Interface Only)
Start
M50LPW041
Write 80h
Write 10h
Read Status
Register
YES
YES
YES
NO
NO
NO
Command
Sequence Error (1)
b7 = 1
b4, b5 = 0
b5 = 0 Erase Error (1)
End
Chip Erase command: – write 80h – write 10h (memory enters read Status Register after the Chip Erase command)
do: – read Status Register
while b7 = 1
If b4, b5 = 1, Command sequence error: – error handler
If b5 = 1, Erase error: – error handler
AI06820
Note: 1. If an error is found, the Status Register must be cleared befor e further Program/Erase Contr ol l er operations.
31/37
Page 32
M50LPW041
Figure 18. Block Erase Flowchart and Pseudo Code
Start
LPC
Interface
Only
Write 20h
Write Block Address
& D0h
Read Status
Register
b7 = 1
b4, b5 = 0
b5 = 0 Erase Error (1)
b1 = 0
End
NO
YES
NO
YES
NO
YES
NO
YES
Suspend
Sequence Error (1)
Erase to Protected
NO
YES
Command
Block Error (1)
Block Erase command: – write 20h – write Block Address & D0h (memory enters read Status Register after the Block Erase command)
do: – read Status Register – if Program/Erase Suspend command given execute suspend erase loop
Suspend
Loop
while b7 = 1
If b4, b5 = 1, Command sequence error: – error handler
If b5 = 1, Erase error: – error handler
If b1 = 1, Erase to protected block error: – error handler
AI04434
Note: 1. If an error is found, the Status Register must be cleared befor e further Program/Erase Contr ol l er operations.
32/37
Page 33
Figure 19. Erase Suspend and Resume Flow chart, and Pseudo Code
Start
Write B0h
Program/Erase Suspend command:
Write 70h
– write B0h – write 70h
M50LPW041
Read Status
Register
b7 = 1
YES
b6 = 1
YES
Read data from
another block
or
Program
Write D0h
Erase Continues
NO
NO
Erase Complete
Write FFh
Read Data
do: – read Status Register
while b7 = 1
If b6 = 0, Erase completed
Program/Erase Resume command: – write D0h to resume erase – if the Erase operation completed then this is not necessary. The device returns to Read as normal (as if the Program/Erase suspend was not issued).
AI03410
33/37
Page 34
M50LPW041
Table 27. Ordering Information Scheme
Example: M50LPW041 K 1 T
Device Type
M50
Architecture
LP = Low Pin Count Interface
Operating Voltage
W = 3.0 to 3.6V
Device Function
041 = 4 Mbit (512Kb x8), Uniform Block
Package
K = PLCC32 N = TSOP40: 10 x 20 mm
Temperature Range
1 = 0 to 70 °C
Option
T = Tape & Reel Packing
For a list of available options or for furt her information on any aspect of this device, please contact the ST Sales Office nearest to you.
Table 28. Revision History
Date Version Revision Details
07-Jun-2002 -01 First Issue
24-Jul-2002 -02 Temperature Range 5 removed, and document promoted to “Preliminary Data”
16-Sep-2002 2.1
TSOP40 package added. Revision numbering modified: a minor revision will be indicated by incrementing the digit after the dot, and a major revision, by incrementing the digit before the dot (revision version 02 equals 2.0).
34/37
Page 35
PLCC32 – 32 lead Plastic Leaded Chip Carrier, Package Outline
M50LPW041
E3
Note: Drawing is not to scale.
D
D1
1 N
D3
D2 D2
E1 E
F
0.51 (.020)
1.14 (.045)
R
A1 A2
B1
E2
e
B
E2
A
CP
PLCC-A
PLCC32 – 32 lead Plastic Leaded Chip Carrier, Package Mechanical Data
Symbol
Typ Min Max Typ Min Max
A 3.18 3.56 0.125 0 .140 A1 1.53 2.41 0.060 0.095 A2 0.38 0.015
B 0.33 0.53 0.013 0 .021 B1 0.66 0.81 0.026 0.032 CP 0.10 0.004
D 12.32 12.57 0.485 0.495 D1 11.35 11.51 0.447 0.453 D2 4.78 5.66 0.188 0.223 D3 7.62 0.300
E 14.86 15.1 1 0.585 0.595 E1 13.89 14.0 5 0.547 0.553 E2 6.05 6.93 0.238 0 .273 E3 10.16 0.400
e 1.27 0.050
F 0.00 0.13 0. 000 0.005 N32 32 R 0.89 0.035
millimeters inches
35/37
Page 36
M50LPW041
TSOP40 – 40 lead Plastic Thin Small Outline, 10 x 20mm, Package Outline
A2
Note: Drawing is not to scale.
1 N
N/2
DIE
TSOP-a
D1
D
E
A
C
e
B
CP
LA1 α
TSOP40 – 40 lead Plastic Thin Small Outline, 10 x 20mm, Package Mechan ic al Data
Symbol
Typ Min Max Typ Min Max
millimeters inches
A 1.20 0 0.0472
A1 0.050 0.15 0 0.0020 0.0059 A2 0.950 1.05 0 0.0374 0.0413
B 0.170 0.27 0 0.0067 0.0106 C 0.100 0.210 0.0039 0.0083 D 19.800 20.200 0.7795 0.7953
D1 18.300 18.500 0.7205 0.7283
E 9.900 10.100 0.3 898 0.3976
e 0.500 0.0197
L 0.500 0.700 0.0197 0.0276
α
N40 40
CP 0.100 0 .0039
36/37
Page 37
M50LPW041
Information furnished is believed to be ac curate and reli able. Howev er, STMicroel ectronics assumes no responsibilit y for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implic ation or otherwise under any patent or patent rights of STMi croelectr onics. Specifications mentioned in thi s publicati on are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as cri tical comp onents in life support dev i ces or systems wi t hout express written ap proval of STMi croelect ro nics.
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