Datasheet M4N37 Datasheet (Motorola)

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SEMICONDUCTOR TECHNICAL DATA

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The M4N37 device consists of a gallium arsenide infrared emitting diode

optically coupled to a monolithic silicon phototransistor detector.

• Current Transfer Ratio — 100% Minimum @ Specified Conditions

• Guaranteed Switching Speeds

• Meets or Exceeds All JEDEC Registered Specifications

Applications

• General Purpose Switching Circuits

• Interfacing and coupling systems of different potentials and impedances

• Regulation Feedback Circuits

• Monitor & Detection Circuits

• Solid State Relays

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by M4N37/D

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STYLE 1 PLASTIC

STANDARD THRU HOLE

SCHEMATIC

MAXIMUM RATINGS

INPUT LED

Reverse Voltage V Forward Current — Continuous I LED Power Dissipation @ TA = 25°C

with Negligible Power in Output Detector

Derate above 25°C

OUTPUT TRANSISTOR

Collector–Emitter Voltage V Emitter–Base Voltage V Collector–Base Voltage V Collector Current — Continuous I Detector Power Dissipation @ TA = 25°C

with Negligible Power in Input LED

Derate above 25°C

TOTAL DEVICE

Isolation Source Voltage

(Peak ac Voltage, 60 Hz, 1 sec Duration)

Total Device Power Dissipation @ TA = 25°C

Derate above 25°C Ambient Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec, 1/16″ from case) T

1. Isolation surge voltage is an internal device dielectric breakdown rating.

1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

(TA = 25°C unless otherwise noted)

Rating

(1)

(2)

Symbol Value Unit

6 Volts

60 mA

100

1.41

30 Volts

7 Volts 70 Volts 50 mA

150

1.76

7500 Vac(pk)

250

2.94 –55 to +100 °C –55 to +150 °C

260 °C

mW/°C

CEO EBO CBO

ISO

stg

2 3

PIN 1. LED ANODE

2. LED CATHODE

3. N.C.

4. EMITTER

5. COLLECTOR

6. BASE

5 4

Motorola Optoelectronics Device Data

 Motorola, Inc. 1997

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M4N37

(

ELECTRICAL CHARACTERISTICS

Characteristic

INPUT LED

Forward Voltage (IF = 10 mA) TA = 25°C

Reverse Leakage Current (VR = 6 V) I Capacitance (V = 0 V, f = 1 MHz) C

OUTPUT TRANSISTOR

Collector–Emitter Dark Current (VCE = 10 V, TA = 25°C)

Collector–Base Dark Current (VCB = 10 V) TA = 25°C

Collector–Emitter Breakdown Voltage (IC = 1 mA) V Collector–Base Breakdown Voltage (IC = 100 µA) V Emitter–Base Breakdown Voltage (IE = 100 µA) V DC Current Gain (IC = 2 mA, VCE = 5 V) h Collector–Emitter Capacitance (f = 1 MHz, VCE = 0) C Collector–Base Capacitance (f = 1 MHz, VCB = 0) C Emitter–Base Capacitance (f = 1 MHz, VEB = 0) C

COUPLED

Output Collector Current TA = 25°C

(IF = 10 mA, VCE = 10 V) TA = –55°C

Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA) V Turn–On Time Turn–Off Time Rise Time Fall Time t Isolation Voltage (f = 60 Hz, t = 1 sec) V Isolation Current Isolation Resistance (V = 500 V) Isolation Capacitance (V = 0 V , f = 1 MHz)

1. Always design to the specified minimum/maximum electrical limits (where applicable).

2. Current Transfer Ratio (CTR) = IC/IF x 100%.

3. For test circuit setup and waveforms, refer to Figure 14.

4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

(4)

= 1500 Vpk) I

I–O

(TA = 25°C unless otherwise noted)

TA = –55°C TA = 100°C

(VCE = 30 V, TA = 100°C)

TA = 100°C

(IC = 2 mA, VCC = 10 V,

RL = 100 Ω)

(4)

(3)

(1)

Symbol Min Typ

CEO

CBO

(BR)CEO (BR)CBO (BR)EBO

FE CE CB EB

IC (CTR)

CE(sat)

off t

ISO

F 0.8

(2)

r f

0.9

0.7 — — 10 µA — 18 — pF

— —

— 0.2

30 45 — Volts 70 100 — Volts

— 400 — — — 7 — pF — 19 — pF — 9 — pF

10 (100)

4 (40) 4 (40)

— 0.14 0.3 Volts — 7.5 10 — 5.7 10 — 3.2 — — 4.7 —

7500 — — Vac(pk)

— 8 100 µA

— 0.2 2 pF

(1)

1.15

1.3

1.05

—

100

7 7.8 — Volts

30 (300)

— —

— — Ω

Max Unit

1.5

1.7

1.4

500

20 —

— — —

Volts

nA µA

mA (%)

µs

Motorola Optoelectronics Device Data

Page 3

1.4

1.3

1.2

1.1

TA = –55°C

TA = 25°C

1.5 NORMALIZED TO: VCE = 10 V IF = 10 mA TA = 25

1.0

CTR

CE(sat) VCE

= 0.4 V

NCTR

M4N37

(sat)

, FORWARD VOLTAGE (V)

1.0

0.9

0.8

0.7

TA = 85°C

0.5

NCTR, NORMALIZED CTR

1.0 1.0

IF, FORWARD CURRENT (mA)

10 1000.1

TA = 25°C

10 1000

IF, LED CURRENT (mA)

Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non–Saturated and

Saturated CTR, TA = 25°C vs. LED Current

1.5 NORMALIZED TO:

VCE = 10 V IF = 10 mA TA = 25

CTR

CE(sat) VCE

= 0.4 V

1.0

0.5

NCTR, NORMALIZED CTR

NCTR

TA = 50°C

NCTR

(sat)

1.5 NORMALIZED TO:

VCE = 10 V IF = 10 mA TA = 25

CTR

CE(sat) VCE

= 0.4 V

1.0

0.5

NCTR, NORMALIZED CTR

NCTR

TA = 70°C

NCTR

(sat)

1.0 IF, LED CURRENT (mA)

10 1000.1

Figure 3. Normalized Non–Saturated and Saturated

CTR, TA = 50°C vs. LED Current

1.5 NORMALIZED TO:

VCE = 10 V IF = 10 mA TA = 25

CTR

CE(sat) VCE

= 0.4 V

1.0 IF, LED CURRENT (mA)

1.0

0.5

NCTR, NORMALIZED CTR

1.0 IF, LED CURRENT (mA)

10 1000.1

Figure 4. Normalized Non–Saturated and Saturated

CTR, TA = 70°C vs. LED Current

NCTR

TA = 85°C

NCTR

(sat)

10 1000.1

Figure 5. Normalized Non–Saturated and Saturated

Motorola Optoelectronics Device Data

CTR, TA = 85°C vs. LED Current

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M4N37

, COLLECTOR CURRENT (mA)

5.0 0

25°C 50°C

85°C

70°C

100

IF, LED CURRENT (mA)

30 40 50 60

, COLLECTOR–EMITTER (nA)I

CEO

10 10

–1 –2

040–20

TA, AMBIENT TEMPERATURE (

TYPICAL

VCE = 10 V

60 10080

Figure 6. Collector–Emitter Current

vs. Temperature and LED Current

1.5 NORMALIZED TO:

IF = 10 mA VCB = 9.3 V TA = 25

1.0

, NORMALIZED CTR

0.5

CB CB

NCTR

25°C 50°C

70°C

Figure 8. Normalized CTRcb vs. LED

1.0 IF, LED CURRENT (mA)

10 1000.1

Current and Temperature

NORMALIZED TO: IF = 10 mA TA = 25

1.0

0.1

NORMALIZED PHOTOCURRENT

0.01

Figure 7. Collector–Emitter Leakage

Current vs. Temperature

–20°C

1.0 IF, LED CURRENT (mA)

25°C

50°C

10 1000.1

Figure 9. Normalized Photocurrent vs.

lF and T emperature

70°C

1.2 70°C 50°C

1.0 25°C

–20°C

0.8

, NORMALIZED H

FE FE

0.6

0.4

10 IB, BASE CURRENT (mA)

NORMALIZED TO: VCE = 10 V IB = 20

TA = 25

100 10001.0

Figure 10. Normalized Non–Saturated HFE vs. Base

Current and Temperature

Motorola Optoelectronics Device Data

Page 5

1.5

1.0

0.5

, NORMALIZED SATURATED H

FE(sat) FE

70°C

25°C

–20°C

VCE = 0.4 V

50°C

IB, BASE CURRENT (

NORMALIZED TO: VCE = 10 V IB = 20 TA = 25

100 10001.0

M4N37

1000

100

, PROPAGATION DELAY ( s)

1.0

RL, COLLECTOR LOAD RESISTOR (KW)

TA = 25°C IF = 10 mA VCC = 5.0 V VTH = 1.5 V

1.00.1

10 100

2.5

2.0

1.5

1.0

, PROPAGATION DELAY ( s)

Figure 1 1. Normalized HFE vs. Base Current

and Temperature

Figure 13. Switching Timing

Figure 12. Propagation Delay vs. Collector

Load Resistor

PLH

VTH = 1.5 V

PHL

Motorola Optoelectronics Device Data

VCC = 5.0 V

F = 10 KHz DF = 50%

IF = 10 mA

Figure 14. Switching Schematic

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M4N37

Package Dimensions in Inches (mm)

0.248 (6.30)

0.256 (6.50)

4 typ.

0.018 (0.45)

0.022 (0.55)

PIN ONE

ID.

0.335 (8.50)

0.343 (8.70)

0.039 (1.00) min.

0.130 (3.30)

0.138 (3.50)

0.031 (0.80) min.

0.031 (0.80)

0.035 (0.90)

0.100 (2.54) typ.

ANODE

CATHODE

0.010 (0.25) typ.

0.300 (7.62) typ.

18 typ.

0.300 (7.62)

0.347 (8.82)

BASE

COLLECTOR

EMITTER

0.114 (2.90)

0.130 (3.30)

Motorola Optoelectronics Device Data

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M4N37

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Motorola Optoelectronics Device Data

Page 8

M4N37

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Motorola Optoelectronics Device Data

M4N37/D