Datasheet M4N26 Datasheet (Motorola)

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SEMICONDUCTOR TECHNICAL DATA

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The M4N26 device consists of a gallium arsenide infrared emitting diode

optically coupled to a monolithic silicon phototransistor detector.

• Most Economical Optoisolator Choice for Medium Speed, Switching Applications

• Meets or Exceeds All JEDEC Registered Specifications

Applications

• General Purpose Switching Circuits

• Interfacing and coupling systems of different potentials and impedances

• I/O Interfacing

• Solid State Relays

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by M4N26/D

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STYLE 1 PLASTIC

6

1

STANDARD THRU HOLE

SCHEMATIC

MAXIMUM RATINGS

INPUT LED

Reverse Voltage V
Forward Current — Continuous I
LED Power Dissipation @ TA = 25°C

with Negligible Power in Output Detector

Derate above 25°C

OUTPUT TRANSISTOR

Collector–Emitter Voltage V
Emitter–Collector Voltage V
Collector–Base Voltage V
Collector Current — Continuous I
Detector Power Dissipation @ TA = 25°C

with Negligible Power in Input LED

Derate above 25°C

TOTAL DEVICE

Isolation Surge Voltage

(Peak ac Voltage, 60 Hz, 1 sec Duration)

Total Device Power Dissipation @ TA = 25°C

Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec, 1/16″ from case) T

1. Isolation surge voltage is an internal device dielectric breakdown rating.

1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.

(TA = 25°C unless otherwise noted)

Rating

(1)

(2)

(2)

Symbol Value Unit

3 Volts

60 mA

100

1.41

30 Volts

7 Volts
70 Volts
50 mA

150

1.76

7500 Vac(pk)

250

2.94
–55 to +100 °C
–55 to +150 °C

260 °C

mW/°C

mW/°C

mW/°C

P

CEO
ECO
CBO

P

V

ISO

P

T

T

R

F

D

C

D

D

A

stg

L

mW

mW

mW

1
2
3

PIN 1. LED ANODE

2. LED CATHODE

3. N.C.

4. EMITTER

5. COLLECTOR

6. BASE

6

5
4

Motorola Optoelectronics Device Data

 Motorola, Inc. 1997

1

M4N26

ELECTRICAL CHARACTERISTICS

Characteristic

INPUT LED

Forward Voltage (IF = 10 mA) TA = 25°C

Reverse Leakage Current (VR = 3 V) I
Capacitance (V = 0 V, f = 1 MHz) C

OUTPUT TRANSISTOR

Collector–Emitter Dark Current

(VCE = 10 V, TA = 25°C)

(VCE = 10 V, TA = 100°C) I
Collector–Base Dark Current (VCB = 10 V) I
Collector–Emitter Breakdown Voltage (IC = 1 mA) V
Collector–Base Breakdown Voltage (IC = 100 µA) V
Emitter–Collector Breakdown Voltage (IE = 100 µA) V
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0) C
Collector–Base Capacitance (f = 1 MHz, VCB = 0) C
Emitter–Base Capacitance (f = 1 MHz, VEB = 0) C

COUPLED

Output Collector Current (IF = 10 mA, VCE = 10 V) IC (CTR)
Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA) V
Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)
Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)
Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)
Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)
Isolation Voltage (f = 60 Hz, t = 1 sec)
Isolation Resistance (V = 500 V)
Isolation Capacitance (V = 0 V , f = 1 MHz)

1. Always design to the specified minimum/maximum electrical limits (where applicable).

2. Current Transfer Ratio (CTR) = IC/IF x 100%.

3. For test circuit setup and waveforms, refer to Figure 14.

4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

(TA = 25°C unless otherwise noted)

TA = –55°C
TA = 100°C

(3)
(3)

(3)

(3)

(4)

(4)

(4)

(1)

Symbol Min Typ

V

R

I

CEO
CEO

CBO
(BR)CEO
(BR)CBO
(BR)ECO

CE
CB
EB

CE(sat)

t

on

t

off
t

t

V

ISO

R

ISO

C

ISO

F —

J

(2)

r
f

2 (20) 7 (70) — mA (%)

7500 — — Vac(pk)
10

(1)

—
—

— — 100 µA
— 18 — pF

— 1 50 nA
— 1 — µA
— 0.2 — nA
30 45 — Volts
70 100 — Volts

7 7.8 — Volts
— 7 — pF
— 19 — pF
— 9 — pF

— 0.15 0.5 Volts
— 2.8 — µs
— 4.5 — µs
— 2 — µs
— 2 — µs

11

— 0.2 — pF

1.15

1.3

1.05

— — Ω

Max Unit

1.5
—
—

Volts

2

Motorola Optoelectronics Device Data

1.4

1.3

1.2

1.1

TA = –55°C

TA = 25°C

1.5
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25

1.0

CTR

°

C

CE(sat) VCE

= 0.4 V

NCTR

NCTR

M4N26

(sat)

, FORWARD VOLTAGE (V)

F

V

1.0

0.9

0.8

0.7

TA = 85°C

0.5

NCTR, NORMALIZED CTR

1.0 1.0

IF, FORWARD CURRENT (mA)

10 1000.1

0

TA = 25°C

10 1000

IF, LED CURRENT (mA)

Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non–Saturated and

Saturated CTR, TA = 25°C vs. LED Current

1.5
NORMALIZED TO:

VCE = 10 V
IF = 10 mA
TA = 25

°

CTR

CE(sat) VCE

C

= 0.4 V

1.0

0.5

NCTR, NORMALIZED CTR

NCTR

TA = 50°C

NCTR

(sat)

1.5
NORMALIZED TO:

VCE = 10 V
IF = 10 mA
TA = 25

°

CTR

CE(sat) VCE

C

= 0.4 V

1.0

0.5

NCTR, NORMALIZED CTR

NCTR

TA = 70°C

NCTR

(sat)

0

1.0
IF, LED CURRENT (mA)

10 1000.1

Figure 3. Normalized Non–Saturated and Saturated

CTR, TA = 50°C vs. LED Current

1.5
NORMALIZED TO:

VCE = 10 V
IF = 10 mA
TA = 25

°

CTR

CE(sat) VCE

C

= 0.4 V

1.0
IF, LED CURRENT (mA)

1.0

0.5

NCTR, NORMALIZED CTR

0

0

1.0
IF, LED CURRENT (mA)

10 1000.1

Figure 4. Normalized Non–Saturated and Saturated

CTR, TA = 70°C vs. LED Current

NCTR

TA = 85°C

NCTR

(sat)

10 1000.1

Figure 5. Normalized Non–Saturated and Saturated

Motorola Optoelectronics Device Data

CTR, TA = 85°C vs. LED Current

3

M4N26

5

35

30

25

20

15

10

, COLLECTOR CURRENT (mA)

CE

I

5.0
0

10

25°C
50°C

85°C

70°C

100

20

IF, LED CURRENT (mA)

30 40 50 60

, COLLECTOR–EMITTER (nA)I

CEO

10
10

10

10

10

10

10

–1
–2

4

3

2

1

0

040–20

20

TA, AMBIENT TEMPERATURE (

TYPICAL

VCE = 10 V

60 10080

°

C)

Figure 6. Collector–Emitter Current

vs. Temperature and LED Current

1.5
NORMALIZED TO:

IF = 10 mA
VCB = 9.3 V
TA = 25

°

1.0

, NORMALIZED CTR

0.5

CB CB

NCTR

0

C

25°C
50°C

70°C

Figure 8. Normalized CTRcb vs. LED

1.0
IF, LED CURRENT (mA)

10 1000.1

Current and Temperature

10

NORMALIZED TO:
IF = 10 mA
TA = 25

1.0

0.1

NORMALIZED PHOTOCURRENT

0.01

Figure 7. Collector–Emitter Leakage

Current vs. Temperature

–20°C

°

C

1.0
IF, LED CURRENT (mA)

25°C

50°C

10 1000.1

Figure 9. Normalized Photocurrent vs.

lF and T emperature

70°C

1.2
70°C
50°C

1.0
25°C

–20°C

0.8

, NORMALIZED H

FE FE

0.6

NH

0.4

10
IB, BASE CURRENT (mA)

NORMALIZED TO:
VCE = 10 V
IB = 20

m

A

TA = 25

°

C

100 10001.0

Figure 10. Normalized Non–Saturated HFE vs. Base

Current and Temperature

4

Motorola Optoelectronics Device Data

1.5

1.0

0.5

, NORMALIZED SATURATED H

FE(sat) FE

NH

0

70°C

25°C

–20°C

VCE = 0.4 V

50°C

10

IB, BASE CURRENT (

NORMALIZED TO:
VCE = 10 V
IB = 20
TA = 25

100 10001.0

m

A)

M4N26

1000

m

A

°

C

m

100

10

, PROPAGATION DELAY ( s)

LH

tp

1.0

tp

HL

tp

LH

RL, COLLECTOR LOAD RESISTOR (KW)

TA = 25°C
IF = 10 mA
VCC = 5.0 V
VTH = 1.5 V

1.00.1

10 100

2.5

2.0

1.5

1.0

m

, PROPAGATION DELAY ( s)

HL

tp

Figure 1 1. Normalized HFE vs. Base Current

and Temperature

I

F

V

O

Figure 13. Switching Timing

Figure 12. Propagation Delay vs. Collector

Load Resistor

t

D

t

R

t

PLH

VTH = 1.5 V

t

PHL

t

S

t

F

Motorola Optoelectronics Device Data

VCC = 5.0 V

F = 10 KHz
DF = 50%

IF = 10 mA

R

L

Figure 14. Switching Schematic

V

O

5

M4N26

Package Dimensions in Inches (mm)

0.248 (6.30)

0.256 (6.50)

_

4 typ.

0.018 (0.45)

0.022 (0.55)

1

23

46

5

PIN ONE

ID.

0.335 (8.50)

0.343 (8.70)

0.039 (1.00)
min.

0.130 (3.30)

0.138 (3.50)

0.031 (0.80)
min.

0.031 (0.80)

0.035 (0.90)

0.100 (2.54) typ.

ANODE

CATHODE

NC

0.010 (0.25)
typ.

3

0.300 (7.62)
typ.

18 typ.

_

0.300 (7.62)

0.347 (8.82)

BASE

61

COLLECTOR

52

EMITTER

4

0.114 (2.90)

0.130 (3.30)

6

Motorola Optoelectronics Device Data

M4N26

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Motorola Optoelectronics Device Data

7

M4N26

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Motorola Optoelectronics Device Data

M4N26/D