Datasheet M48Z129Y, M48Z129V Datasheet (SGS Thomson Microelectronics)

3.3V/5V 1 Mbit (128Kb x8) ZEROPOWER® SRAM

■ INTEGRATED ULTRA LOW POWER SRAM,

POWER-FAIL CONTROL CIRCUIT, and
BATTERY

■ AUTOMATIC POWER-FAIL CHIP DESELECT

AND WRITE PROTECTIO N

■ MICROPROCESSOR POWER-ON RESET

(RESET VALID EVEN DURING BATTERY
BACK-UP MODE)

■ BATTERY LOW PIN - PROVID ES WA RNI N G

OF BATTERY END-OF-LIFE

■ WRITE PROTECT VOLTAGES

= Power-fail Deselect Voltage):

(V

PFD

– M48Z129Y: 4.2V ≤ V
– M48Z129V: 2.7V ≤ V

■ CONVENTIONAL SRAM OPERATION;

UNLIMITED WRITE CYCLES

■ 10 YEARS OF DATA RETENTION IN THE

ABSENCE OF POWER

■ PIN AND FUNCTION COMPATIBLE WITH

JEDEC STANDARD 128Kb x 8 SRAMS

■ SELF CONTAINED BATTERY IN DIP

PACKAGE

Table 1. Signal Names

A0-A16 Address Inputs
DQ0-DQ7 Data Inputs / Outputs
E
G

Chip Enable
Output Enable

PFD
PFD

≤ 4.5V
≤ 3.0V

M48Z129Y
M48Z129V

32

1

PMDIP32 (PM)

Module

Figure 1. Logic Diagram

V

CC

17

A0-A16 DQ0-DQ7

W RST

E

G

M48Z129Y
M48Z129V

8

BL

W
RST

BL

V

CC

V

SS

Write Enable
Reset Output (Open Drain)
Battery Low Output (Open

Drain)
Supply Voltage
Ground

V

SS

AI02309

1/13June 2000

M48Z129Y, M48Z129V

Table 2. Absolute Maximum Ratings

Symbol Parameter Value Unit

T

A

T

STG

T

BIAS

(2)

T

SLD

V

IO

V

CC

Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress

rating only and functional opera tion of the dev i ce at these or any other conditions above thos e i ndi cated in th e operational section
of this spec ification is not im plied. Exposure t o the abso lute max imum rat ing cond itions for extende d period s of tim e may affe ct
reliability.

2. Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds).

CAUTION: Negative undershoots below –0. 3V are not allowed on any pin wh i l e i n the Batter y Back-up mod e.

Ambient Operating Temperature 0 to 70 °C
Storage Temperature (VCC Off)

Temperature Under Bias

Lead Solder Temperature for 10 seconds 260 °C
Input or Output Voltages

Supply Voltage M48Z129Y

Figure 2A. DIP Pin Connections

(1)

–40 to 70 °C
–10 to 70 °C

M48Z129V

–0.3 to V

–0.3 to 7.0
–0.3 to 4.6

CC

+0.3

V

V

128K x 8 SRAM. It also provides the non-volatility
of FLASH without any requirement for special
write timing or limitations on the number o f writes
that can be performed.

RST V

1

A16

2
3

A14

4

A12

5

A7

6

A6

7

A5

8

A4
A3
A2
A1
A0

DQ0

DQ2

SS

M48Z129Y
M48Z129V

9
10
11
12
13
14
15
16

32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17

AI02310

CC

A15
BL
W
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5DQ1
DQ4
DQ3V

The M48Z129Y/V also has its own Power-Fail De­tect circuit. This control circuitry constantly moni­tors the supply voltage for an out of tolerance
condition. When V

is out of tolerance, the circuit

CC

write protects the SRAM, providing data security in
the midst of unpredictable system operation. As
V

falls, the control circuit ry automatical ly switch-

CC

es to the battery, maintaining data until valid power
is restored.

READ MODE

The M48Z129Y/V is in the Read Mode whenever

(Write Enable) is high and E (Chip Enable) is

W
low. The unique addres s specified b y the 17 Ad­dress Inputs defines which one of the 131,072
bytes of data is to be accessed. Valid data will be
available at the Data I/O pins within t

AVQV

(Ad­dress Access Time) after the last address input
signal is stable, providing the E
times are also satisfied. If the E

and G access

and G access
times are not met, valid data will be available after
the latter of the Chip Enable Access Times (t
or Output Enable Access Time (t

GLQV

ELQV

).

The state of the eight t hree-s tate Da ta I/O s i gnals

DESCRIPTION

The M48Z129Y/V ZEROPOWER SRAM is a
1,048,576 bit non-volatile static RAM organized as
131,072 words by 8 bits. The device combines an
internal lithium battery, a CMOS SRAM and a con­trol circuit in a plastic 32 pin DIP Module. The

is controlled by E
ed before t
indeterminate state until t
puts are changed while E
output data will remain valid for t
Data Hold Time) but will go indeterminate until the
next Address Access .

and G. If the outputs are activat-

, the data lines will be driven to an

AVQV

. If the Address In-

AVQV

and G remain active,

AXQX

(Output

M48Z129Y/V directly replaces industry standard

)

2/13

M48Z129Y, M48Z129V

Table 3. Operating Modes

Mode

Deselect
Write
Read
Read

Deselect
Deselect

Note: 1. X = VIH or VIL; VSO = Battery Back-up Swit ch ov er Volta ge.

2. See T able 7 for details.

4.5V to 5.5V

(M48Z129Y)

3.0V to 3.6V
(M48Z129V)

V

to V

SO

(1)

V

CC

or

(2)

(min)

PFD

(2)

V

≤

SO

E G W DQ0-DQ7 Power

V

IH

V

IL

V

IL

V

IL

X X X High Z CMOS Standby
X X X High Z Battery Back-up Mode

Figure 3. Block Diagram

V

CC

E

VOLTAGE SENSE

AND

SWITCHING

CIRCUITRY

X X High Z Standby
X

V

IL

V

IH

POWER

E

V

IL

V

IH

V

IH

131,072 x 8

SRAM ARRAY

D

IN

D

OUT

High Z Active

Active
Active

A0-A16

DQ0-DQ7

W

INTERNAL

BATTERY

RST V

BL

WRITE MODE

The M48Z129Y/V is i n the Write M ode whenever
W

(Write Ena ble) and E (Chi p Enable) are active.
The start of a write is referenced from the latter oc­curring falling edge of W
ed by the earlier rising edge of W

or E. A write is terminat-

or E. The

addresses must be held valid t hroughout the cycle.

or W must return high for a minimum o f t

E
from Chip Enable or t

from Write Enable prior

WHAX

EHAX

to the initiation of another read or write cycle.
Data-in must be valid t
write and remain valid for t

prior to the end of

DVW H

afterward. G

WHDX

should be kept high during write cycles to avoid

G

SS

AI03608

bus contention; although, if the output bus has
been activated by a low on E
will disable the outputs t

and G a low on W

after W falls.

WLQZ

DATA RETENTION MODE

With valid V

applied, the M48Z129Y/V operates

CC

as a conventional BYTEWIDE static RAM. Should
the supply voltage de cay, the RA M will a utomati­cally deselect, write protecting itself when V
falls between V

PFD

(max), V

(min) window. All

PFD

CC

outputs become high impedance and all inputs are

treated as “don’t care”.

3/13

M48Z129Y, M48Z129V

Table 4. AC Measurement Conditions

Input Rise and Fall Times
Input Pulse Voltages 0 to 3V
Input and Output Timing Ref. Voltages 1.5V

Note that Output Hi-Z is defined as the point where data is no longer
driven.

≤

5ns

Note: A power failure during a write cycle may
corrupt data at the current addressed location, but

does not jeopardize the rest of the RAM’s content.
At voltages below V
in a write protected state, provided the V
time is not less than t
spond to transient noise s pi kes on V

(min), the memory will be

PFD

that cr os s

CC

CC

. The M48Z129Y/V may re-

F

fall

into the deselect window during the time the de­vice is sampling V

. Therefore, decoupling of the

CC

power supply lines is recommended.
When V

drops below VSO, the control circuit

CC

switches power to the internal b attery, preserving
data. The internal energy source will maintain
data in the M48Z129Y/V for an accumulated peri­od of at least 10 years at room temperature. As
system power rises above V

, the battery is dis-

SO

connected, and the power supply is switched to
external V
V

reaches V

CC

. Deselect continues for t

CC

PFD

(max).

REC

after

For more information on Battery Storage Life refer
to the Application Note AN1012.

POWER-ON RESET OUTPUT

All microprocessors have a reset input which forc­es them to a known state when starting. The
M48Z129Y/V has a reset output ( RST
is guaranteed to be low below V

PFD

) pin which

(min). This sig­nal is an open drain configuration. An appropriate
pull-up resistor should be chosen to control the
rise time. This signal will be valid for all voltage
conditions, even when V
exceeds the power failure detect voltage V
internal timer keeps RST

equals VSS. Once V

CC

low for t

to allow the

REC

PFD

CC

, an

power sup ply to s tabilize.

BATTERY LOW PIN

The M48Z129Y/V automatically performs battery
voltage monitoring upon power-up, and at factory-

Figure 4. AC Testing Load Circuit

DEVICE
UNDER

TEST

CL includes JIG capacitance

Note: 1. 50pF for M48Z129V (3.3V).

650Ω

CL = 100pF
or 50pF

(1)

1.75V

AI03630

programmed time intervals of 24 hours. The Bat­tery Low (BL

) pin will be asserted if the battery volt­age is found to be less than approximately 2.5V. If
a battery low is generated during a power-up se­quence, this indicates that the battery is below 2.5
volts and may not be able to maintain data integrity
in the SRAM. Data should be considered suspect,
and verified as correct.

If a battery low indication is generated during the
24-hour interval check, this indicates that the bat­tery is near end of life. However, data is not com­promised due to the fact that a nominal V

CC

is

supplied.
The M48Z129Y/V only monitors the battery when

a nominal V

is applied to the device. Thus ap-

CC

plications which require extensive durations in the
battery back-up mode should be powered-up peri­odically (at least once every few months) in order
for this technique to be beneficial. Additional ly, if
a battery low is indicated, data integrity s hould be
verified upon power-up via a checksum or other
technique. The BL

pin is an open drain output and
an appropriate pull-up resistor should be chosen
to control the rise time.

4/13

M48Z129Y, M48Z129V

Table 5. Capacitance

(T

= 25 °C, f = 1 MHz)

A

(1)

Symbol Parameter Test Condition Min Max Unit

V

V

IN

OUT

= 0V

= 0V

10 pF
10 pF

C

C

IO

Note: 1. Effective capacitance measured with po wer suppl y at 5V.

2. Outputs desele cted.

Input Capacitance

IN

(2)

Input / Output Capacitance

Table 6A. DC Characteristics

(T

= 0 to 70 °C; VCC = 4.5V to 5.5V)

A

Symbol Parameter Test Condition Min Max Unit

(1)

I

LI

I

LO

I

CC

I

CC1

I

CC2

V

V

IH

V

OL

V

OH

Note: 1. Outputs deselected.

Input Leakage Current

(1)

Output Leakage Current
Supply Current Outputs open 95 mA
Supply Current (Standby) TTL

Supply Current (Standby) CMOS
Input Low Voltage –0.3 0.8 V

IL

Input High Voltage 2.2
Output Low Voltage
Output High Voltage

0V ≤ V

IN

0V ≤ V

OUT

E

= V

E

= VCC – 0.2V

I

= 2.1mA

OL

I

= –1mA

OH

≤ V

≤ V

IH

CC

CC

±1 µA
±1 µA

7mA
4mA

V

+ 0.3

CC

0.4 V

2.4 V

V

Table 6B. DC Characteristics

(T

= 0 to 70 °C; VCC = 3.0V to 3.6V)

A

Symbol Parameter Test Condition Min Max Unit

(1)

I

LI

I

LO

I

CC

I

CC1

I

CC2

V

V

IH

V

OL

V

OH

Note: 1. Outputs deselected.

Input Leakage Current

(1)

Output Leakage Current
Supply Current Outputs open 50 mA
Supply Current (Standby) TTL

Supply Current (Standby) CMOS
Input Low Voltage –0.3 0.6 V

IL

Input High Voltage 2.2
Output Low Voltage
Output High Voltage

0V ≤ V

IN

0V ≤ V

OUT

E

= V

E

= VCC – 0.2V

I

= 2.1mA

OL

I

= –1mA

OH

≤ V

≤ V

IH

CC

CC

±1 µA
±1 µA

4mA
3mA

V

+ 0.3

CC

0.4 V

2.2 V

V

5/13

M48Z129Y, M48Z129V

Table 7. Power Down/Up Trip Points DC Characteristics

(1)

(TA = 0 to 70 °C)

Symbol Parameter Min Typ Max Unit

Power-fail Deselect Voltage (M48Z129Y) 4.2 4.35 4.5

V

PFD

V

SO

t

DR

Note: 1. All voltages referenced to VSS.

2. At 25 ° C.

Power-fail Deselect Voltage (M48Z129V) 2.7 2.9 3.0
Battery Back-up Switchover Voltage (M48Z129Y) 3.0
Battery Back-up Switchover Voltage (M48Z129V) 2.45

(2)

Expected Data Retention Time 10 YEARS

Table 8. Power Down/Up AC Characteristics

(T

= 0 to 70 °C)

A

Symbol Parameter Min Max Unit

(1)

V

t

F

(2)

t

FB

t

R

t

RB

(max) to V

PFD

V

(min) to VSS VCC Fall Time (M48Z129Y)

PFD

V

(min) to VSS VCC Fall Time (M48Z129V)

PFD

V

(min) to V

PFD

VSS to V

PFD

Write Protect Time (M48Z129Y) 40 150

t

WPT

Write Protect Time (M48Z129V) 40 250

(min) VCC Fall Time

PFD

(max) VCC Rise Time

PFD

(min) VCC Rise Time

300 µs

10

150

10 µs

1µs

V

V

µs

µs

t

REC

Note: 1. V

2. V

V

(max) to RST High

PFD

(max) to V

PFD

es V

(min).

PFD

(min) to VSS fall time of less than tFB may cause corruption of RAM data.

PFD

(min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass-

PFD

40 200 ms

6/13

Figure 5. Power Down/Up Mode AC Waveforms

V

CC

V

(max)

PFD

V

(min)

PFD

VSO

M48Z129Y, M48Z129V

tF

tFB

tWPT

E

OUTPUTS

RST

VALID VALID

(PER CONTROL INPUT) (PER CONTROL INPUT)

Table 9. Read Mode AC Characteristics

(T

= 0 to 70 °C; VCC = 4.5V to 5.5V or 3.0V to 3.6V)

A

Symbol Parameter

t

AVAV

(1)

t

AVQV

(1)

t

ELQV

(1)

t

GLQV

(2)

t

ELQX

(2)

t

GLQX

(2)

t

EHQZ

(2)

t

GHQZ

(1)

t

AXQX

Note: 1. CL = 100pF or 50pF (see Figur e 4).

= 5pF (see Figure 4).

2. C

L

Read Cycle Time 70 85 ns
Address Valid to Output Valid 70 85 ns

Chip Enable Low to Output Valid 70 85 ns
Output Enable Low to Output Valid 35 45 ns
Chip Enable Low to Output Transition 5 5 ns
Output Enable Low to Output Transition 3 5 ns
Chip Enable High to Output Hi-Z 30 40 ns
Output Enable High to Output Hi-Z 20 25 ns
Address Transition to Output Transition 5 5 ns

tR

tRB

DON'T CARE

HIGH-Z

tREC

RECOGNIZEDRECOGNIZED

M48Z129Y M48Z 129V

Min Max Min Max

AI03610

Unit-70 -85

7/13

M48Z129Y, M48Z129V

Figure 6. Address Controlled, Read Mode AC Waveforms.

tAVAV

A0-A16

DQ0-DQ7

Note: Chip Enabl e (E

tAVQV

tAXQX

DATA VALID

) and Output Enable (G) = Low, Write Ena ble (W) = High.

VALID

DATA VALID

Figure 7. Chip Enable or Output Enable Controlled, Read Mode AC Waveform

tAVAV

A0-A16

tAVQV tAXQX

tELQV

E

VALID

AI02324

tEHQZ

8/13

G

DQ0-DQ7

tELQX

tGLQX

tGLQV

tGHQZ

DATA OUT

AI01197

Table 10. Write Mode AC Characteristics

(T

= 0 to 70 °C; VCC = 4.5V to 5.5V or 3.0V to 3.6V)

A

Symbol Parameter

t

AVAV

t

AVWL

t

AVEL

t

WLWH

t

ELEH

t

WHAX

t

EHAX

t

DVWH

t

DVEH

t

WHDX

t

EHDX

(1, 2)

t

WLQZ

t

AVWH

t

AVEH

(1, 2)

t

WHQX

Note: 1. CL = 5pF (see Figure 4).

2. If E

goes low simultaneously with W goin g l ow, the output s remain in the high impedance state.

Write Cycle Time 70 85 ns
Address Valid to Write Enable Low 0 0 ns
Address Valid to Chip Enable Low 0 0 ns
Write Enable Pulse Width 55 65 ns
Chip Enable Low to Chip Enable High 55 75 ns
Write Enable High to Address Transition 5 5 ns
Chip Enable High to Address Transition 15 15 ns
Input Valid to Write Enable High 30 35 ns
Input Valid to Chip Enable High 30 35 ns
Write Enable High to Input Transition 0 0 ns
Chip Enable High to Input Transition 10 15 ns

Write Enable Low to Output Hi-Z 25 30 ns
Address Valid to Write Enable High 65 75 ns

Address Valid to Chip Enable High 65 75 ns
Write Enable High to Output Transition 5 5 ns

M48Z129Y, M48Z129V

M48Z129Y M48Z129V

Unit-70 -85

Min Max Min Max

Figure 8. Write Enable Controlled, Write AC Waveforms

tAVAV

A0-A16

tAVEL

E

tAVWL

W

tWLQZ

DQ0-DQ7

VALID

tAVWH

tWLWH

tDVWH

tWHAX

tWHQX

tWHDX

DATA INPUT

AI02382

9/13

M48Z129Y, M48Z129V

Figure 9. Chip Enable Controlled, Write AC Waveforms

tAVAV

A0-A16

tAVEL

E

tAVWL

W

DQ0-DQ7

Figure 10. Supply Voltage Protection

V

CC

V

CC

0.1µF DEVICE

V

SS

AI02169

VALID

tAVWH

tWLWH

tELEH

tDVWH

DATA INPUT

tEHAX

tWHDX

AI03611

POWER SUPPLY DECOUPLING AND
UNDERSHOOT PROTECTION

Icc transients, including those produced by output
switching, can produce voltage fluctuations, re­sulting in spikes on the V

bus. These transients

CC

can be reduced if capacitors are used to store en­ergy, which stabilizes the V

bus. The energy

CC

stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by­pass capacitor value of 0.1 microfarad is re com­mended in order to provide the needed filtering.

In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg­ative voltage spikes on V

that drive it to values

CC

below Vss by as much as one volt. These nega­tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recomm ended to con­nect a schottky diode from V
connected to V

, anode to Vss). (Schottky diode

CC

to Vss (cathode

CC

1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount).

10/13

M48Z129Y, M48Z129V

Table 11. Ordering Information Scheme

Example: M48Z129Y -70 PM 1

Supply Voltage and Write Protect Voltage

129Y = V
129V = V

Speed

-70 = 70ns (M48Z129Y)

-85 = 85ns (M48Z129V)

Package

PM = PMDIP32

Temperature Range

1 = 0 to 70 °C

For a list of available options (Speed, Pac kage, etc...) or for furthe r information on any aspect of this de­vice, please contact the STMicroelectronics Sales Office nearest to you.

= 4.5V to 5.5V; V

CC

= 3.0V to 3.6V; V

CC

= 4.2V to 4.5V

PFD

= 2.7V to 3.0V

PFD

Table 12. Revision History

Date Revision Details

December 1999 First Issue
03/30/00 From Preliminary Data to Data Sheet

changed for M48Z129Y (Table 9)

06/20/00

t

GLQX

11/13

M48Z129Y, M48Z129V

Table 13. PMDIP32 - 32 pin Plastic Module DIP, Package Mechanical Data

Symb

Typ Min Max Typ Min Max

A 9.27 9.52 0.365 0.375

A1 0.38 – 0.015 –

B 0.43 0.59 0.017 0.023
C 0.20 0.33 0. 008 0.013
D 42.42 43.18 1. 670 1.700

E 18.03 18.80 0.710 0.740
e1 2.29 2.79 0. 090 0.110
e3 34.29 41.91 1. 350 1.650
eA 14.99 16.00 0.590 0.630

L 3.05 3.81 0.120 0.150
S 1.91 2.79 0.075 0.110
N32 32

mm inches

Figure 11. PMDIP32 - 32 pin Plastic Module DIP, Package Outline

A1AL

S

Be1

e3

D

N

E

1

Drawing is not to scale.

C

eA

PMDIP

12/13

M48Z129Y, M48Z129V

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13/13