Datasheet LT1795 Datasheet (Linear Technology)

FEATURES
LT1795
Dual 500mA/50MHz
Current Feedback Line Driver
Amplifier
U
DESCRIPTIO
500mA Output Drive Current
50MHz Bandwidth, AV = 2, RL = 25
900V/µs Slew Rate, AV = 2, RL = 25
Low Distortion: –75dBc at 1MHz
High Input Impedance, 10M
Wide Supply Range, ±5V to ±15V
Full Rate, Downstream ADSL Supported
Power Enhanced Small Footprint Packages
TSSOP-20, S0-20 Wide
Low Power Shutdown Mode
Power Saving Adjustable Supply Current
Stable with CL = 10,000pF
U
APPLICATIO S
ADSL HDSL2, G.lite Drivers
Buffers
Test Equipment Amplifiers
Video Amplifiers
Cable Drivers
U
TYPICAL APPLICATION
The LT®1795 is a dual current feedback amplifier with high output current and excellent large signal characteristics. The combination of high slew rate, 500mA output drive and up to ±15V operation enables the device to deliver significant power at frequencies in the 1MHz to 2MHz range. Short-circuit protection and thermal shutdown insure the device’s ruggedness. The LT1795 is stable with large capacitive loads and can easily supply the large currents required by the capacitive loading. A shutdown feature switches the device into a high impedance, low current mode, reducing power dissipation when the de­vice is not in use. For lower bandwidth applications, the supply current can be reduced with a single external resistor.
The LT1795 comes in the very small, thermally enhanced, 20-lead TSSOP package for maximum port density in line driver applications.
, LTC and LT are registered trademarks of Linear Technology Corporation.
Low Loss, High Power Central Office ADSL Line Driver
+
V
+IN
+
1/2
LT1795
1k
165
1k
1/2
–IN
* MIDCOM 50215 OR EQUIVALENT
LT1795
+
V
12.5
1:2*
12.5
100
1795 TA01
1
LT1795
WW
W
ABSOLUTE AXI U RATI GS
U
(Note 1)
Supply Voltage ...................................................... ±18V
Input Current ...................................................... ±15mA
Output Short-Circuit Duration (Note 2)............ Indefinite
Operating Temperature Range ................ –40°C to 85°C
UUW
PACKAGE/ORDER I FOR ATIO
–IN +IN
SHDN
SHDNREF
+IN –IN
TOP VIEW
1
V
2
NC
3 4 5 6 7 8 9
NC
10
V
FE PACKAGE
20-LEAD PLASTIC TSSOP
T
= 150° C, θJA = 40°C/W (Note 4)
JMAX
20
V
19
NC
18
OUT
+
17
V
16
COMP
15
COMP
+
14
V
13
OUT
12
NC
11
V
ORDER PART
NUMBER
LT1795CFE LT1795IFE
Specified Temperature Range (Note 3)... – 40°C to 85°C
Junction Temperature........................................... 150°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
TOP VIEW
1
COMP
+
2
V
3
OUT
4
V
5
V
6
V
7
V
8
–IN
9
+IN
10
SHDN
S PACKAGE
20-LEAD PLASTIC SW
T
= 150° C, θJA 40°C/W (Note 4)
JMAX
20 19 18 17 16 15 14 13 12 11
COMP
+
V OUT
V
V
V
V –IN +IN SHDNREF
ORDER PART
NUMBER
LT1795CSW LT1795ISW
Consult factory for Military grade parts.
ELECTRICAL CHARACTERISTICS
The denotes the specifications which apply over the full specified temperature range, otherwise specifications are at TA = 25°C. VCM = 0V, ±5V ≤ VS ±15V, pulse tested, V
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
I
I
e +i –i
OS
+
IN
IN
n
n n
Input Offset Voltage ±3 ±13 mV
Input Offset Voltage Matching ±1 ±3.5 mV
Input Offset Voltage Drift 10 µV/°C Noninverting Input Current ±2 ±5 µA
Noninverting Input Current Matching ±0.5 ±2 µA
Inverting Input Current ±10 ±70 µA
Inverting Input Current Matching ±10 ±30 µA
Input Noise Voltage Density f = 10kHz, RF =1k, RG = 10Ω, RS = 0 3.6 nV/√Hz Input Noise Current Density f = 10kHz, RF =1k, RG = 10, RS = 10k 2 pA/√Hz Input Noise Current Density f = 10kHz, RF =1k, RG = 10, RS = 10k 30 pA/√Hz
SHDN
= 2.5V, V
SHDNREF
= 0V unless otherwise noted. (Note 3)
±4.5 ±17 mV
±1.5 ±5.0 mV
±8 ±20 µA
±1.5 ±7 µA
±20 ±100 µA
±20 ±50 µA
2
LT1795
ELECTRICAL CHARACTERISTICS
The denotes the specifications which apply over the full specified temperature range, otherwise specifications are at TA = 25°C. VCM = 0V, ±5V ≤ VS ±15V, pulse tested, V
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
+
R
IN
+
C
IN
CMRR Common Mode Rejection Ratio VS = ±15V, VCM = ±12V 55 62 dB
PSRR Power Supply Rejection Ratio VS = ±5V to ±15V 60 77 dB
A
V
R
OL
V
OUT
I
OUT
I
S
HD2, HD
3
SR Slew Rate (Note 7) AV = 4, RL = 400 400 900 V/µs
BW Small-Signal BW AV = 2, VS = ±15V, Peaking ≤ 1.5dB 65 MHz
Input Resistance VIN = ±12V, VS = ±15V 1.5 10 MΩ
Input Capacitance VIN = ±15V 2 pF Input Voltage Range (Note 5) VS = ±15V ±12 ±13.5 V
Inverting Input Current VS = ±15V, VCM = ±12V 110µA/V Common Mode Rejection V
Noninverting Input Current VS = ±5V to ±15V 30 500 nA/V Power Supply Rejection
Inverting Input Current VS = ±5V to ±15V 15µA/V Power Supply Rejection
Large-Signal Voltage Gain VS = ±15V, V
Transresistance, V
OUT
/I
IN
Maximum Output Voltage Swing VS = ±15V, RL = 25Ω±11.5 ±12.5 V
Maximum Output Current VS = ±15V, RL = 1 0.5 1 A Supply Current Per Amplifier VS = ±15V, V
Supply Current Per Amplifier, VS = ±15V 15 20 mA
= 51k, (Note 6) 25 mA
R
SHDN
Positive Supply Current, Shutdown VS = ±15V, V Output Leakage Current, Shutdown VS = ±15V, V Channel Separation VS = ±15V, V 2nd and 3rd Harmonic Distortion f = 1MHz, VO = 20V
Differential Mode
Slew Rate AV = 4, RL = 25 900 V/µs
SHDN
= 2.5V, V
SHDNREF
= 0V unless otherwise noted. (Note 3)
V = ±2V, VS = ±5V 0.5 5 MΩ
VS = ±5V ±2 ±3.5 V
VS = ±5V, VCM = ±2V 50 60 dB
= ±5V, VCM = ±2V 110µA/V
S
= ±10V, RL = 25 55 68 dB
= ±5V, V
V
S
VS = ±15V, V VS = ±5V, V
OUT
= ±2V, RL = 12 55 68 dB
OUT
= ±10V, RL = 25 75 200 k
OUT
= ±2V, RL = 12 75 200 kΩ
OUT
±10.0 ±11.5 V
VS = ±5V, RL = 12Ω±2.5 ±3V
±2.0 ±3V
= 2.5V 29 34 mA
SHDN
= 0.4V 1 200 µA
SHDN
= 0.4V 1 10 µA
SHDN
= ±10V, RL = 25 80 110 dB
OUT
, RL = 50, AV = 2 –75 dBc
P-P
42 mA
RF = RG = 910, RL = 100 AV = 2, VS = ±15V, Peaking ≤ 1.5dB 50 MHz
= RG = 820, RL = 25
R
F
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired.
Note 2: Applies to short-circuits to ground only. A short-circuit between the output and either supply may permanently damage the part when operated on supplies greater than ±10V.
Note 3: The LT1795C is guaranteed to meet specified performance from 0°C to 70°C and is designed, characterized and expected to meet these extended temperature limits, but is not tested at –40°C and 85°C. The LT1795I is guaranteed to meet the extended temperature limits.
Note 4: Thermal resistance varies depending upon the amount of PC board metal attached to the device. If the maximum dissipation of the package is exceeded, the device will go into thermal shutdown and be protected.
Note 5: Guaranteed by the CMRR tests. Note 6: R
is connected between the SHDN pin and V+.
SHDN
Note 7: Slew rate is measured at ±5V on a ±10V output signal while operating on ±15V supplies with R R
= 400Ω.
L
= 1k, RG = 333 (AV = +4) and
F
3
LT1795
W
UU
SMALL-SIGNAL BANDWIDTH
RSD = 0Ω, IS = 30mA per Amplifer, VS = ±15V, Peaking 1dB, RL = 25
A
V
R
F
–1 976 976 44
1 1.15k 53 2 976 976 48
10 649 72 46
R
G
–3dB BW
(MHz)
RSD = 51kΩ, IS = 15mA per Amplifer, VS = ±15V, Peaking 1dB, RL = 25
A
V
–1 976 976 30
1 1.15k 32 2 976 976 32
10 649 72 27
UW
TYPICAL PERFOR A CE CHARACTERISTICS
Supply Current vs Ambient Temperature
40
VS = ±15V
= 1
A
35
V
=
R
L
30
25
20
15
10
5
SUPPLY CURRENT PER AMPLIFIER (mA)
0
–50
–25 0
TEMPERATURE (°C)
RSD = 0
RSD = 51k
50 100 125
25 75
LT1795 G01
Output Saturation Voltage vs Junction Temperature
+
V
VS = ±15V
–1 –2 –3 –4
4 3 2
OUTPUT SATURATION VOLTAGE (V)
1
RL = 2k
V
–50
–25
RL = 2k
50
25
0
TEMPERATURE (°C)
RL = 25
RL = 25
75
100
LT1795 G02
125
R
F
R
G
Output Short-Circuit Current vs Junction Temperature
2.0
1.8
1.6
1.4
1.2
–50
SINKING
–25 0
1.0
0.8
OUTPUT SHORT-CIRCUIT CURRENT (A)
0.6
SOURCING
25 75
TEMPERATURE (°C)
–3dB BW
(MHz)
VS = ±15V
50 100 125
LT1795 G03
SHDN Pin Current vs Voltage
0.6 VS = ±15V
= 0V
V
SHDNREF
0.5
0.4
0.3
0.2
CURRENT INTO SHDN PIN (mA)
0.1
0
0
1 2 3 4 5
VOLTAGE APPLIED AT SHDN PIN (V)
4
1795 G04
Second Harmonic Distortion vs Frequency
–40
AV = 2 DIFFERENTIAL
= 20V
V
OUT
–50
VS = ±15V R I
Q
–60
–70
–80
DISTORTION (dBc)
–90
–100
10k
P-P
= 50
LOAD
PER AMPLIFIER
FREQUENCY (Hz)
IQ = 10mA
100k 1M
IQ = 5mA
IQ = 15mA
IQ = 20mA
LT1795 G05
Third Harmonic Distortion vs Frequency
–40
AV = 2 DIFFERENTIAL V
= 20V
OUT
–50
VS = ±15V R
I
Q
–60
–70
–80
DISTORTION (dBc)
–90
–100
10k
P-P
= 50
LOAD
PER AMPLIFIER
IQ = 20mA
FREQUENCY (Hz)
IQ = 10mA
100k 1M
IQ = 5mA
IQ = 15mA
LT1795 G06
UW
TYPICAL PERFOR A CE CHARACTERISTICS
LT1795
Second Harmonic Distortion vs Frequency
–40
AV = 10 DIFFERENTIAL
= 20V
V
OUT
–50
VS = ±15V R
I
Q
–60
–70
–80
DISTORTION (dBc)
–90
–100
10k
P-P
= 50
LOAD
PER AMPLIFIER
IQ = 15mA
IQ = 20mA
IQ = 5mA
100k 1M
FREQUENCY (Hz)
Third Harmonic Distortion vs Frequency
–40
AV = 2 DIFFERENTIAL V
= 20V
OUT
–50
VS = ±12V R
I
–60
–70
–80
DISTORTION (dBc)
–90
IQ = 10mA
–100
10k
P-P
= 50
LOAD
PER AMPLIFIER
Q
IQ = 20mA
100k 1M
FREQUENCY (Hz)
IQ = 5mA
IQ = 10mA
LT1795 G07
IQ = 15mA
LT1795 G10
Third Harmonic Distortion vs Frequency
–40
AV = 10 DIFFERENTIAL
= 20V
V
OUT
–50
VS = ±15V R
I
Q
–60
–70
–80
DISTORTION (dBc)
–90
–100
10k
P-P
= 50
LOAD
PER AMPLIFIER
IQ = 5mA
FREQUENCY (Hz)
IQ = 10mA
IQ = 15mA
100k 1M
Second Harmonic Distortion vs Frequency
–40
AV = 10 DIFFERENTIAL
= 20V
V
OUT
–50
VS = ±12V R
I
Q
–60
–70
–80
DISTORTION (dBc)
–90
–100
10k
P-P
= 50
LOAD
PER AMPLIFIER
IQ = 15mA
FREQUENCY (Hz)
IQ = 20mA
IQ = 5mA
100k 1M
IQ = 20mA
IQ = 10mA
LT1795 G08
LT1795 G11
Second Harmonic Distortion vs Frequency
–40
AV = 2 DIFFERENTIAL V
= 20V
OUT
–50
VS = ±12V R
I
Q
–60
–70
–80
DISTORTION (dBc)
–90
–100
10k
P-P
= 50
LOAD
PER AMPLIFIER
FREQUENCY (Hz)
IQ = 10mA
100k 1M
Third Harmonic Distortion vs Frequency
–40
AV = 10 DIFFERENTIAL V
= 20V
OUT
–50
VS = ±12V R
I
Q
–60
–70
–80
DISTORTION (dBc)
–90
–100
10k
P-P
= 50
LOAD
PER AMPLIFIER
IQ = 10mA
FREQUENCY (Hz)
IQ = 5mA
IQ = 15mA
100k 1M
IQ = 5mA
IQ = 15mA
IQ = 20mA
LT1795 G09
IQ = 20mA
LT1795 G12
Second Harmonic Distortion vs Frequency
–40
AV = 2 DIFFERENTIAL
= 4V
V
OUT
–50
–60
–70
–80
DISTORTION (dBc)
–90
–100
10k
P-P
VS = ±12V R
= 50
LOAD
PER AMPLIFIER
I
Q
IQ = 20mA
IQ = 10mA
IQ = 15mA
100k 1M
FREQUENCY (Hz)
IQ = 5mA
LT1795 G13
Third Harmonic Distortion vs Frequency
–40
AV = 2 DIFFERENTIAL
= 4V
V
OUT
VS = ±12V R
= 50
LOAD
PER AMPLIFIER
I
Q
P-P
100k 1M
FREQUENCY (Hz)
–50
–60
–70
–80
DISTORTION (dBc)
–90
–100
10k
IQ = 5mA
IQ = 10mA
IQ = 15mA
IQ = 20mA
LT1795 G14
Second Harmonic Distortion vs Frequency
–40
AV = 10 DIFFERENTIAL V
= 4V
OUT
–50
–60
–70
–80
DISTORTION (dBc)
–90
–100
10k
P-P
VS = ±12V R
= 50
LOAD
I
PER AMPLIFIER
Q
IQ = 5mA
IQ = 20mA
100k 1M
FREQUENCY (Hz)
IQ = 10mA
IQ = 15mA
LT1795 G15
5
LT1795
UW
TYPICAL PERFOR A CE CHARACTERISTICS
Third Harmonic Distortion vs Frequency
–40
AV = 10 DIFFERENTIAL V
= 4V
OUT
–50
–60
–70
–80
DISTORTION (dBc)
–90
–100
–110
10k
P-P
VS = ±12V R
= 50
LOAD
PER AMPLIFIER
I
Q
100k 1M
FREQUENCY (Hz)
–40
–50
–60
–70
–80
DISTORTION (dBc)
Second Harmonic Distortion vs Frequency
–40
AV = 2 DIFFERENTIAL
IQ = 5mA
IQ = 10mA
IQ = 15mA
IQ = 20mA
LT1795 G16
V
–50
VS = ±5V R
I
–60
–70
–80
DISTORTION (dBc)
–90
–100
10k
Second Harmonic Distortion vs Frequency
AV = 10 DIFFERENTIAL
= 4V
V
OUT
P-P
VS = ±5V
= 50
R
LOAD
PER AMPLIFIER
I
Q
IQ = 20mA
IQ = 15mA
IQ = 10mA
= 4V
OUT
P-P
= 50
LOAD
PER AMPLIFIER
Q
IQ = 20mA
IQ = 10mA
IQ = 15mA
100k 1M
FREQUENCY (Hz)
Third Harmonic Distortion vs Frequency
–40
AV = 2 DIFFERENTIAL V
–50
VS = ±5V R
I
–60
IQ = 5mA
LT1795 G17
–70
–80
DISTORTION (dBc)
–90
–100
10k
Third Harmonic Distortion vs Frequency
–40
AV = 10 DIFFERENTIAL
= 4V
V
OUT
–50
–60
–70
–80
DISTORTION (dBc)
P-P
VS = ±5V R
= 50
LOAD
PER AMPLIFIER
I
Q
= 4V
OUT
P-P
= 50
LOAD
PER AMPLIFIER
Q
IQ = 5mA
IQ = 10mA
IQ = 15mA
IQ = 5mA
IQ = 10mA
IQ = 15mA
IQ = 20mA
100k 1M
FREQUENCY (Hz)
LT1795 G18
10k
IQ = 5mA
100k 1M
FREQUENCY (Hz)
–90
–100
Slew Rate vs Supply Current
1200
1000
800
600
400
SLEW RATE (V/µs)
200
0
10 15
7.5 SUPPLY CURRENT PER AMPLIFIER (mA)
RISING
20 30
LT1795 G19
FALLING
VS = ±15V
=25°C
T
A
= 4
A
V
R
LOAD
= 1k
R
F
25
= 25
1795 • G21
–90
–100
10k
100k 1M
FREQUENCY (Hz)
–3dB Bandwidth vs Supply Current
50
45
40
35
–3dB BANDWIDTH (MHz)
30
25
10 15
7.5 SUPPLY CURRENT PER AMPLIFIER (mA)
IQ = 20mA
LT1795 G20
VS = ±15V
=25°C
T
A
= 4
A
V
= 25
R
LOAD
= 1k
R
F
20 30
25
1795 • G22
6
LT1795
10 SHDN
V
+
11 SHDNREF
1795 F03
R
SHDNREF
U
WUU
APPLICATIO S I FOR ATIO
The LT1795 is a dual current feedback amplifier with high output current drive capability. The amplifier is designed to drive low impedance loads such as twisted-pair trans­mission lines with excellent linearity.
SHUTDOWN/CURRENT SET If the shutdown/current set feature is not used, connect
SHDN to V+ and SHDNREF to ground.
The SHDN and SHDNREF pins control the biasing of the two amplifiers. The pins can be used to either turn off the amplifiers completely, reducing the quiescent current to less then 200µA, or to control the quiescent current in normal operation.
+
V
R
SHDN
10 SHDN
When V
SHDN
= V
SHDNREF
, the device is shut down. The device will interface directly with 3V or 5V CMOS logic when SHDNREF is grounded and the control signal is applied to the SHDN pin. Switching time between the active and shutdown states is about 1.5µs.
Figures 1 to 4 illustrate how the SHDN and SHDNREF pins can be used to reduce the amplifier quiescent current. In both cases, an external resistor is used to set the current. The two approaches are equivalent, however the required resistor values are different. The quiescent current will be approximately 115 times the current in the SHDN pin and 230 times the current in the SHDNREF pin. The voltage across the resistor in either condition is V+ – 1.5V. For example, a 50k resistor between V+ and SHDN will set the
11 SHDNREF
1795 F01
Figure 1. R
Connected Between V+ and SHDN (Pin 10);
SHDN
SHDNREF (Pin 11) = GND. See Figure 2
80
70
60
50
40
30
– mA (BOTH AMPLIFIERS)
20
SY
I
AMPLIFIER SUPPLY CURRENT,
10
0
0 25 50 75 100 125 150 175 200 225
R
SHDN
(k)
Figure 2. LT1795 Amplifier Supply Current vs R
TA = 25°C
= ±15V
V
S
1795 F02
SHDN
. R
SHDN
Connected Between V+ and SHDN, SHDNREF = GND (See Figure 1)
Figure 3. R
SHDNREF
Connected Between SHDNREF (Pin 11)
and GND; SHDN (Pin 10) = V+. See Figure 4
80
70
60
50
40
30
– mA (BOTH AMPLIFIERS)
20
SY
I
AMPLIFIER SUPPLY CURRENT,
10
0
50 100 150 200 250 300 350 400 450 500
R
SHDNREF
(k)
TA = 25°C
= ±15V
V
S
1795 F04
Figure 4. LT1795 Amplifier Supply Current vs R R
SHDNREF
Connected Between SHDNREF and GND,
SHDN = V+ (See Figure 3)
SHDNREF
.
7
LT1795
U
WUU
APPLICATIO S I FOR ATIO
quiescent current to 33mA with VS = ±15V. If ON/OFF control is desired in addition to reduced quiescent current, then the circuits in Figures 5 to 7 can be employed.
+
V
R
SHDN
R
OFF
ON
(0V)
(3.3V/5V)
Q1: 2N3904 OR EQUIVALENT
10k
B
Q1
Figure 5. Setting Amplifier Supply Current Level with ON/OFF Control, Version 1
R
SHDN1
R
B1
ON
OFF
10k
(0V) (0V)
Q1A, Q1B: ROHM IMX1 or FMG4A (W/INTERNAL R
Q1A
Figure 6. Setting Multiple Amplifier Supply Current Levels with ON/OFF Control, Version 2
OFF
10 SHDN
11 SHDNREF
ON
(3.3V/5V)(3.3V/5V)
R
PULLUP
R
R
B2
10k
B
1795 F05
>500k
SHDN2
)
INTERNAL LOGIC THRESHOLD ~1.4V
+
V
10 SHDN
11 SHDNREF
Q1B
1795 F06
Figure 8 illustrates a partial shutdown with direct logic control. By keeping the output stage slightly biased on, the output impedance remains low, preserving the line termi­nation. The design equations are:
V
R
1
R
2
115
=
II
S
() ()
ON
=
VVI I I
SHDN H S
( ) () ()
H
S
OFF
•–
VV
115
/•
CC SHDN
()
 
ON
OFF
+
S
()
OFF
S
where
VH = Logic High Level (IS)ON = Supply Current Fully On (IS) V
= Supply Current Partially On
OFF
= Shutdown Pin Voltage ≈1.4V
SHDN
VCC = Positive Supply Voltage
V
CC
R2
10
SHDN
11
SHDNREF
I
SY
CONTROL
1795 F08
INTERNAL LOGIC THRESHOLD ~ 1.4V
OFF
(0V)
ON
(3.3V/5V)
R1
ON
OFF
(0V)
(3.3V/5V)
0.5mA
I
PROG
= 0
FOR R
EXT
(SEE SHDN PIN
CURRENT vs
VOLTAGE
CHARACTERISTIC)
R
I
PROG
EXT
SHDN
10
SHDNREF
11
I
SY
CONTROL
Figure 7. Setting Amplifier Supply Current Level with ON/OFF Control, Version 3
8
INTERNAL LOGIC THRESHOLD ~ 1.4V
1795 F07
Figure 8. Partial Shutdown
THERMAL CONSIDERATIONS
The LT1795 contains a thermal shutdown feature that protects against excessive internal (junction) temperature. If the junction temperature of the device exceeds the protection threshold, the device will begin cycling between normal operation and an off state. The cycling is not harmful to the part. The thermal cycling occurs at a slow rate, typically 10ms to several seconds, which depends on the power dissipation and the thermal time constants of the package and heat sinking. Raising the ambient tempera-
LT1795
U
WUU
APPLICATIO S I FOR ATIO
ture until the device begins thermal shutdown gives a good indication of how much margin there is in the thermal design.
For surface mount devices, heat sinking is accomplished by using the heat spreading capabilities of the PC board and its copper traces. For the TSSOP package, power is dissipated through the exposed heatsink. For the SO package, power is dissipated from the package primarily through the V– pins (4 to 7 and 14 to 17). These pins should have a good thermal connection to a copper plane, either by direct contact or by plated through holes. The copper plane may be an internal or external layer. The thermal resistance, junction-to-ambient will depend on the total copper area connected to the device. For example, the thermal resistance of the LT1795 connected to a 2 × 2 inch, double sided 2 oz copper plane is 40°C/W.
CALCULATING JUNCTION TEMPERATURE
The junction temperature can be calculated from the equation:
TJ = (PD)(θJA) + T
where
TJ = Junction Temperature TA = Ambient Temperature PD = Device Dissipation
θJA = Thermal Resistance (Junction-to-Ambient)
Differential Input Signal Swing
The differential input swing is limited to about ±5V by an ESD protection device connected between the inputs. In normal operation, the differential voltage between the input pins is small, so this clamp has no effect. However, in the shutdown mode, the differential swing can be the same as the input swing. The clamp voltage will then set the maximum allowable input voltage.
A
ing 0.5A current peaks into the load, a 1 power supply impedance will cause a droop of 0.5V, reducing the available output swing by that amount. Surface mount tantalum and ceramic capacitors make excellent low ESR bypass elements when placed close to the chip. For frequencies above 100kHz, use 1µF and 100nF ceramic capacitors. If significant power must be delivered below 100kHz, capacitive reactance becomes the limiting factor. Larger ceramic or tantalum capacitors, such as 4.7µF, are recommended in place of the 1µF unit mentioned above.
Inadequate bypassing is evidenced by reduced output swing and “distorted” clipping effects when the output is driven to the rails. If this is observed, check the supply pins of the device for ripple directly related to the output waveform. Significant supply modulation indicates poor bypassing.
Capacitance on the Inverting Input
Current feedback amplifiers require resistive feedback from the output to the inverting input for stable operation. Take care to minimize the stray capacitance between the output and the inverting input. Capacitance on the invert­ing input to ground will cause peaking in the frequency response (and overshoot in the transient response), but it does not degrade the stability of the amplifier.
Feedback Resistor Selection
The optimum value for the feedback resistors is a function of the operating conditions of the device, the load imped­ance and the desired flatness of response. The Typical AC Performance tables give the values which result in less than 1dB of peaking for various resistive loads and oper­ating conditions. If this level of flatness is not required, a higher bandwidth can be obtained by use of a lower feedback resistor.
For resistive loads, the COMP pin should be left open (see Capacitive Loads section).
POWER SUPPLY BYPASSING
To obtain the maximum output and the minimum distor­tion from the LT1795, the power supply rails should be well bypassed. For example, with the output stage supply-
Capacitive Loads
The LT1795 includes an optional compensation network for driving capacitive loads. This network eliminates most of the output stage peaking associated with capacitive loads, allowing the frequency response to be flattened.
9
LT1795
U
WUU
APPLICATIONS INFORMATION
Figure 9 shows the effect of the network on a 200pF load. Without the optional compensation, there is a 6dB peak at 85MHz caused by the effect of the capacitance on the output stage. Adding a 0.01µF bypass capacitor between the output and the COMP pins connects the compensation
14
VS = ±15V
12
= 200pF
C
L
10
RF = 1k
8
COMPENSATION
6 4 2
VOLTAGE GAIN (dB)
0 –2 –4 –6
1
FREQUENCY (MHz)
Figure 9.
RF = 3.4k
NO
COMPENSATION
RF = 3.4k COMPENSATION
10 100
1795 F09
and greatly reduces the peaking. A lower value feedback resistor can now be used, resulting in a response which is flat to ±1dB to 45MHz. The network has the greatest effect for CL in the range of 0pF to 1000pF.
Although the optional compensation works well with capacitive loads, it simply reduces the bandwidth when it is connected with resistive loads. For instance, with a 25 load, the bandwidth drops from 48MHz to 32MHz when the compensation is connected. Hence, the compensation was made optional. To disconnect the optional compensa­tion, leave the COMP pin open.
DEMO BOARD
A demo board (DC261A) is available for evaluating the performence of the LT1795. The board is configured as a differential line driver/receiver suitable for xDSL applica­tions. For details, consult your local sales representative.
PACKAGE DESCRIPTIO
0.291 – 0.299** (7.391 – 7.595)
0.010 – 0.029
(0.254 – 0.737)
0.009 – 0.013
(0.229 – 0.330)
NOTE:
1. PIN 1 IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES ARE THE MANUFACTURING OPTIONS. THE PART MAY BE SUPPLIED WITH OR WITHOUT ANY OF THE OPTIONS
DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
*
DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
**
NOTE 1
0.016 – 0.050
(0.406 – 1.270)
U
Dimensions in inches (millimeters) unless otherwise noted.
SW Package
20-Lead Plastic Small Outline (Wide 0.300)
(LTC DWG # 05-08-1620)
0.496 – 0.512*
(12.598 – 13.005)
× 45°
° – 8° TYP
0
NOTE 1
0.093 – 0.104
(2.362 – 2.642)
19 1817161514 13
20
2345
1
0.050
(1.270)
TYP
0.014 – 0.019
(0.356 – 0.482)
TYP
6
78
1112
910
(0.940 – 1.143)
0.037 – 0.045
0.004 – 0.012
(0.102 – 0.305)
0.394 – 0.419
(10.007 – 10.643)
S20 (WIDE) 0396
10
PACKAGE DESCRIPTIO
U
Dimensions in millimeters (inches) unless otherwise noted.
FE Package
20-Lead Plastic TSSOP (4.4mm)
(LTC DWG # 05-08-1663)
6.40 – 6.60*
(0.252 – 0.260)
20 19 18 17 16 15
111214 13
LT1795
4.30 – 4.48** (0.169 – 0.176)
° – 8°
0
0.09 – 0.18
(0.0035 – 0.0071)
NOTE: DIMENSIONS ARE IN MILLIMETERS
*
DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.152mm (0.006") PER SIDE
**
DIMENSIONS DO NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.254mm (0.010") PER SIDE
0.50 – 0.70
(0.020 – 0.028)
3.0
(0.118)
(0.0256)
0.65
BSC
0.18 – 0.30
(0.0071 – 0.0118)
345678
2
5.12
(0.202)
6.25 – 6.50
(0.246 – 0.256)
9 101
1.15
(0.453)
MAX
0.05 – 0.15
(0.002 – 0.006)
FE20 TSSOP 0200
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen­tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
11
LT1795
SI PLIFIED
WW
SCHEMATIC
SHDN
SHDNREF
TO ALL CURRENT SOURCES
+
V
Q5
Q2
Q1
V
+
V
Q3
Q4
Q6
Q8
Q7
D1
Q9
V
C
C
R
C
+
V
Q12
D2
Q15
Q16
50
Q10
Q11
COMP–IN+IN
OUTPUT
Q14
Q13
V
1795 SS
RELATED PARTS
PART NUMBER DESCRIPTION COMMENTS
LT1497 Dual 125mA, 50MHz Current Feedback Amplifier 900V/µs Slew Rate LT1207 Dual 250mA, 60MHz Current Feedback Amplifier Shutdown/Current Set Function LT1886 Dual 200mA, 700MHz Voltage Feedback Amplifier Low Distortion: –72dBc at 200kHz
1795f LT/TP 4K 0200 • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1999
12
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
www.linear-tech.com
Loading...