Low Voltage and Current Noise Instrumentation
Amplifier Front Ends
■
Two and Three Op Amp Instrumentation Amplifiers
■
Active Filters
U
TYPICAL APPLICATIO
The LT®1792 achieves a new standard of excellence in
noise performance for a JFET op amp. The 4.2nV/√Hz
voltage noise combined with low current noise and
picoampere bias currents make the LT1792 an ideal choice
for amplifying low level signals from high impedance
capacitive transducers.
The LT1792 is unconditionally stable for gains of 1 or more,
even with load capacitances up to 1000pF. Other key
features are 600µV VOS and a voltage gain of over 4 million.
Each individual amplifier is 100% tested for voltage noise,
slew rate and gain bandwidth.
The design of the LT1792 has been optimized to achieve
true precision performance with an industry standard
pinout in the SO-8 package. Specifications are also provided for ±5V supplies.
, LTC and LT are registered trademarks of Linear Technology Corporation.
Low Noise Hydrophone Amplifier with DC Servo
2
3
–5V TO –15V
R8
100M
R7
1M
< 70°C
A
5V TO 15V
–
LT1792
+
R6
100k
7
6
4
C2
0.47µF
6
LT1097
R1*
100M
R2
200Ω
HYDRO-
PHONE
DC OUTPUT ≤ 2.5mV FOR T
OUTPUT VOLTAGE NOISE = 128nV/√Hz AT 1kHz (GAIN = 20)
C1 ≈ C
T
R3
3.9k
C1*
C
T
≈ 100pF TO 5000pF; R4C2 > R8CT; *OPTIONAL
1kHz Input Noise Voltage Distribution
VS = ±15V
40
= 25°C
T
A
OUTPUT
R4
1M
–
2
R5
1M
3
+
1792 TA01
30
20
PERCENT OF UNITS (%)
10
0
3.84.2
3.6
4.0
INPUT VOLTAGE NOISE (nV/√Hz)
270 OP AMPS TESTED
5.0
4.65.6
4.8
4.4
5.2
5.4
1792 TA02
1
Page 2
LT1792
A
W
O
LUTEXI TIS
S
A
WUW
U
ARB
G
(Note 1)
Supply Voltage ..................................................... ±20V
Differential Input Voltage ...................................... ±40V
Input Voltage (Equal to Supply Voltage)............... ±20V
The ● denotes specifications which apply over the temperature range
LT1792AC/LT1792AILT1792C/LT1792I
●–10.0 –10.5–10.0 –10.5V
Note 1: Absolute Maximum Ratings are those values beyond which the
life of a device may be impaired.
Note 2: Typical parameters are defined as the 60% yield of parameter
distributions of individual amplifiers.
Note 3: Warmed-up I
temperature of 32°C from 25°C measurements and 32°C characterization
data.
Note 4: Current noise is calculated from the formula:
i
= (2qIB)
n
where q = 1.6 • 10
swamps the contribution of current noise.
Note 5: Input voltage range functionality is assured by testing offset
voltage at the input voltage range limits to a maximum of 2.3mV
(A grade), to 2.8mV (C grade).
and IOS readings are extrapolated to a chip
B
1/2
–19
coulomb. The noise of source resistors up to 200M
Note 6: This parameter is not 100% tested.
Note 7: Slew rate is measured in AV = –1; input signal is ±7.5V, output
measured at ±2.5V.Note 8: The LT1792AC and LT1792C are guaranteed to meet specified
performance from 0°C to 70°C and are designed, characterized and
expected to meet these extended temperature limits, but are not tested at
–40°C and 85°C. The LT1792I is guaranteed to meet the extended
temperature limits. The LT1792AC and LT1792AI grade are 100%
temperature tested for the specified temperature range.
Note 9: The LT1792 is measured in an automated tester in less than one
second after application of power. Depending on the package used,
power dissipation, heat sinking, and air flow conditions, the fully
warmed-up chip temperature can be 10°C to 50°C higher than the
ambient temperature.
4
Page 5
LPER
F
0.1Hz to 10Hz Voltage Noise
VOLTAGE NOISE (1µV/DIV)
2
0
4
TIME (SEC)
O
6
R
LT1792
UW
ATYPICA
8
1792 G01
CCHARA TERIST
E
C
Voltage Noise vs Frequency
100
VS = ±15V
= 25°C
T
A
10
1/f CORNER
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
1
10
110
30Hz
FREQUENCY (Hz)
ICS
10010k1k
1792 G02
Voltage Noise
vs Chip Temperature
10
VS = ±15V
9
8
7
6
5
4
3
2
VOLTAGE NOISE (AT 1kHz) (nV/√Hz)
1
0
–75
–500
–25
TEMPERATURE (°C)
100
25
75
50
125
1792 G03
Input Bias and Offset Current
Over the Common Mode Range
400
TA = 25°C
= ±15V
V
S
NOT WARMED UP
300
200
BIAS CURRENT
100
INPUT BIAS AND OFFSET CURRENTS (pA)
0
–15
OFFSET CURRENT
–10–505
COMMON-MODE RANGE (V)
Common Mode Rejection Ratio
vs Frequency
120
100
80
60
40
20
COMMON MODE REJECTION RATIO (dB)
0
1k100k1M10M
10k
FREQUENCY (Hz)
1015
1792 G22
TA = 25°C
V
= ±15V
S
1792 G06
Input Bias and Offset Current
vs Chip Temperature
100
VS = ±15V
30
10
3
1
0.3
0.1
0.03
INPUT BIAS AND OFFSET CURRENT (nA)
0.01
–75
–252575–50050100
TEMPERATURE (°C)
I
B
Power Supply Rejection Ratio
vs Frequency
120
100
80
60
40
20
POWER SUPPLY REJECTION RATIO (dB)
0
10
–PSRR
1k10k 100k
100
FREQUENCY (Hz)
+PSRR
I
OS
1792 G04
TA = 25°C
1M10M
1792 G07
V
COMMON MODE LIMIT
V
125
Common Mode Limit
vs Temperature
+
0
–0.5
–1.0
–1.5
–2.0
4.0
3.5
3.0
REFERRED TO POWER SUPPLY (V)
2.5
–
+2.0
–60
–20
V+ = 5V TO 20V
V– = –5V TO –20V
20
TEMPERATURE (°C)
Voltage Gain vs Frequency
180
160
140
120
100
80
60
VOLTAGE GAIN (dB)
40
20
0
–20
0.01
1
FREQUENCY (Hz)
100
60
10k
100
1M
140
1792 G05
100M
1792 G08
5
Page 6
LT1792
LPER
Gain and Phase Shift
vs Frequency
50
40
30
20
10
VOLTAGE GAIN (dB)
PHASE
GAIN
UW
R
F
O
ATYPICA
TA = 25°C
= ±15V
V
S
= 10pF
C
L
CCHARA TERIST
E
C
Small-Signal Transient Response
80
100
PHASE SHIFT (DEG)
120
140
160
20mV/DIV
ICS
Large-Signal Transient Response
5V/DIV
0
–10
0.1
110100
FREQUENCY (MHz)
Output Voltage Swing
vs Load Current
V+ –0.8
–1.0
–1.2
–1.4
–1.6
2.0
1.8
1.6
1.4
OUTPUT VOLTAGE SWING (V)
1.2
–
V
+1.0
–8
–10
I
SINK
VS = ±5V TO ±20V
125°C
–55°C
–6 –4
OUTPUT CURRENT (mA)
Warm-Up Drift
90
VS = ±15V
= 25°C
T
A
75
60
25°C
–55°C
25°C
048
–2
SO-8 PACKAGE
125°C
2
6
1792 G09
I
SOURCE
1792 G12
180
200
10
AV = 1
= 10pF
C
L
= ±15V, ±5V
V
S
1µs/DIV
Capacitive Load Handling
50
VS = ±15V
= 25°C
T
A
≥ 10k
R
L
40
= 100mV
V
O
AV = 10
R
F
30
C
F
20
OVERSHOOT (%)
10
0
0.1
P-P
= 10k
= 20pF
A
= 1
V
= 10
A
V
1
CAPACITIVE LOAD (pF)
10
THD and Noise vs Frequency for
Noninverting Gain
1
ZL = 2k 15pF
= 20V
V
O
P-P
= 1, 10, 100
A
V
MEASUREMENT BANDWIDTH
0.1
= 10Hz TO 80kHz
100
1000
10000
1792 G13
1792 G10
AV = 1
C
= 10pF
L
= 2k
R
L
= ±15V
V
S
5µs/DIV
Slew Rate and Gain-Bandwidth
Product vs Temperature
6
VS = ±15V
5
4
3
SLEW RATE (V/µs)
2
1
0
–75
–2525
–500
TEMPERATURE (°C)
GBWP
50
THD and Noise vs Frequency for
Inverting Gain
1
ZL = 2k 15pF
= 20V
V
O
P-P
= –1, –10, – 100
A
V
MEASUREMENT BANDWIDTH
0.1
= 10Hz TO 80kHz
1792 G11
GAIN-BANDWIDTH PRODUCT (f
12
10
100
1792 G14
125
8
6
4
2
0
O
= 100kHz) (MHz)
SR
75
CHANGE IN OFFSET VOLTAGE (µV)
6
45
30
15
0
0
234
1
TIME AFTER POWER ON (MINUTES)
N8 PACKAGE
56
1792 G15
0.01
0.001
TOTAL HARMONIC DISTROTION + NOISE (%)
0.0001
20100
AV = 100
A
= 10AV = 1
V
NOISE FLOOR
FREQUENCY (Hz)
1k20k10k
1792 G16
0.01
0.001
TOTAL HARMONIC DISTROTION + NOISE (%)
0.0001
20100
AV = –100
AV = –10
NOISE FLOOR
1k20k10k
FREQUENCY (Hz)
AV = –1
1792 G17
Page 7
LPER
TEMPERATURE (°C)
–75
3
SUPPLY CURRENT (mA)
4
–255025
100
1792 G21
5
–500
75
125
VS = ±15V
VS = ±5V
LT1792
UW
R
F
O
ATYPICA
CCHARA TERIST
E
C
ICS
THD and Noise vs Output
Amplitude for Noninverting Gain
1
ZL = 2k 15pF, fO = 1kHz
A
= 1, 10, 100
V
MEASUREMENT BANDWIDTH
= 10Hz TO 22kHz
0.1
AV = 100
0.01
AV = 10
0.001
TOTAL HARMONIC DISTORTION + NOISE (%)
0.0001
0.3
AV = 1
11030
OUTPUT SWING (V
P-P
Short-Circuit Output Current
vs Temperature
40
V
= ±15V
S
35
30
SINKSOURCE
25
THD and Noise vs Output
Amplitude for Inverting Gain
1
ZL = 2k 15pF, fO = 1kHz
= –1, –10, – 100
A
V
MEASUREMENT BANDWIDTH
= 10Hz TO 22kHz
0.1
AV = –100
0.01
AV = –10
0.001
TOTAL HARMONIC DISTORTION + NOISE (%)
0.0001
)
1792 G18
0.3
AV = –1
11030
OUTPUT SWING (V
P-P
)
1792 G19
Supply Current vs Temperature
PPLICATI
A
The LT1792 may be inserted directly into OPA124, AD743,
AD745, AD645, AD544 and AD820 sockets with improved
noise performance. Offset nulling will be compatible with
these devices with the wiper of the potentiometer tied to
the negative supply (Figure 1a). No appreciable change in
offset voltage drift with temperature will occur when the
device is nulled with a potentiometer ranging from 10k to
200k. Finer adjustments can be made with resistors in
series with the potentiometer (Figure 1b).
Being a low voltage noise JFET op amp, the LT1792 can
replace many bipolar op amps that are used in amplifying
low level signals from high impedance transducers. The
20
OUTPUT CURRENT (mA)
15
10
–75
–500
–255025
TEMPERATURE (°C)
U
O
IFORATIO
S
75
100
125
1792 G20
WU
U
15V
–
2
3
7
6
+
1
5
50k
–15V
4
= ±10mV
∆V
OS
1792 F01a
15V
–
2
3
7
6
+
1
10k
5
10k
50k
–15V
4
∆V
= ±1mV
OS
1792 F01b
(b)(a)
Figure 1
7
Page 8
LT1792
SOURCE RESISTANCE (Ω)
100
1
10
1k
1k100M
1792 F02
100k
100
10M10k1M
RESISTOR NOISE ONLY
INPUT NOISE VOLTAGE (nV/
√
H
z)
Vn = AV √V
n2(OP AMP)
+ 4kTR + 2qIB • R
2
+
–
C
S
R
S
V
O
C
S
R
S
LT1007
LT1792
LT1007*
LT1792*
SOURCE RESISTANCE = 2RS = R
* PLUS RESISTOR
†
PLUS RESISTOR 1000pF CAPACITOR
LT1792
†
LT1007
†
PPLICATI
A
U
O
IFORATIO
S
WU
U
best bipolar op amps, with higher current noise, will
eventually lose out to the LT1792 when transducer impedance increases. The low voltage noise of the LT1792
allows it to surpass most single JFET op amps available.
For the best performance versus area available anywhere,
the LT1792 is offered in the SO-8 surface mount package
with no degradation in performance.
The low voltage and current noise offered by the LT1792
makes it useful in a wide range of applications, especially
where high impedance, capacitive transducers are used
such as hydrophones, precision accelerometers and photo
diodes. The total output noise in such a system is the gain
times the RMS sum of the op amp input referred voltage
noise, the thermal noise of the transducer, and the op amp
bias current noise times the transducer impedance.
Figure 2 shows total input voltage noise versus source
resistance. In a low source resistance (<5k) application
the op amp voltage noise will dominate the total noise.
This means the LT1792 will beat out any JFET op amp, only
the lowest noise bipolar op amps have the edge
at low source resistances. As the source resistance increases from 5k to 50k, the LT1792 will match the best
bipolar op amps for noise performance, since the thermal
noise of the transducer (4kTR) begins to dominate the
total noise. A further increase in source resistance, above
50k, is where the op amp’s current noise component (2qI
R
) will eventually dominate the total noise. At these
TRANS
B
high source resistances, the LT1792 will out perform
the lowest noise bipolar op amp due to the inherently low
Figure 2. Comparison of LT1792 and LT1007 Total Output
1kHz Voltage Noise Versus Source Resistance
current noise of FET input op amps. Clearly, the LT1792
will extend the range of high impedance transducers
that can be used for high signal-to-noise ratios. This
makes the LT1792 the best choice for high impedance,
capacitive transducers.
The high input impedance JFET front end makes the
LT1792 suitable in applications where very high charge
sensitivity is required. Figure 3 illustrates the LT1792 in its
inverting and noninverting modes of operation. A charge
amplifier is shown in the inverting mode example; here the
gain depends on the principal of charge conservation at
8
R1
TRANSDUCER
CSR
R
B
1792 F03
R
F
C
F
–
+
OUTPUT
CB = CFC
RB = RFR
Q = CV; = I = C
S
S
dQ
dV
dt
dt
R2
C
B
R
B
S
–
+
CB ≅ C
S
RB = R
S
RS > R1 OR R2
OUTPUT
CSR
TRANSDUCER
S
C
B
Figure 3. Noninverting and Inverting Gain Configurations
Page 9
LT1792
U
O
PPLICATI
A
the input of the LT1792. The charge across the transducer
capacitance, CS, is transferred to the feedback capacitor
CF, resulting in a change in voltage, dV, equal to dQ/CF.
The gain therefore is CF/CS. For unity gain, the CF should
equal the transducer capacitance plus the input capacitance of the LT1792 and RF should equal RS. In the
noninverting mode example, the transducer current is
converted to a change in voltage by the transducer capacitance; this voltage is then buffered by the LT1792 with a
gain of 1 + R1/R2. A DC path is provided by RS, which is
either the transducer impedance or an external resistor.
Since RS is usually several orders of magnitude greater
than the parallel combination of R1 and R2, RB is added to
balance the DC offset caused by the noninverting input
bias current and RS. The input bias currents, although
small at room temperature, can create significant errors at
higher temperature, especially with transducer resistances
of up to 100M or more. The optimum value for RS is
determined by equating the thermal noise (4kTRS) to the
current noise times RS, [(2qIB) • RS], resulting in
RB = 2VT/IB (VT = 26mV at 25°C). A parallel capacitor, CB,
is used to cancel the phase shift caused by the op amp
input capacitance and RB.
Reduced Power Supply Operation
The LT1792 can be operated from ±5V supplies for lower
power dissipation resulting in lower IB and noise at the
IFORATIO
S
WU
U
expense of reduced dynamic range. To illustrate this
benefit, let’s take the following example:
An LT1792CS8 operates at an ambient temperature of
25°C with ±15V supplies, dissipating 159mW of power
(typical supply current = 5.3mA). The SO-8 package has a
θJA of 190°C/W, which results in a die temperature in-
crease of 30.2°C or a room temperature die operating
temperature of 55.2°C. At ±5V supplies, the die temperature increases by only one third of the previous amount or
10.1°C resulting in a typical die operating temperature of
only 35.1°C. A 20 degree reduction of die temperature is
achieved at the expense of a 20V reduction in dynamic
range.
To take full advantage of a wide input common mode
range, the LT1792 was designed to eliminate phase reversal. Referring to the photographs shown in Figure 4, the
LT1792 is shown operating in the follower mode (AV = 1)
at ±5V supplies with the input swinging ±5.2V. The output
of the LT1792 clips cleanly and recovers with no phase
reversal. This has the benefit of preventing lock-up in
servo systems and minimizing distortion components.
High Speed Operation
The low noise performance of the LT1792 was achieved
by making the input JFET differential pair large to maximize the first stage gain. Increasing the JFET geometry
INPUT: ±5.2V Sine WaveLT1792 Output
1792 F04a1792 F03b
Figure 4. Voltage Follower with Input Exceeding the Common Mode Range ( V
= ±5V)
S
9
Page 10
LT1792
PPLICATI
A
U
O
IFORATIO
S
WU
U
also increases the parasitic gate capacitance, which if left
unchecked, can result in increased overshoot and ringing. When the feedback around the op amp is resistive
(RF), a pole will be created with RF, the source resistance
and capacitance (RS, CS), and the amplifier input capacitance (CIN = 27pF). In low gain configurations and with
RS and RF in the kilohm range (Figure 5), this pole can
create excess phase shift and even oscillation. A small
capacitor (CF) in parallel with RF eliminates this problem.
With RS(CS + CIN) = RFCF, the effect of the feedback pole
is completely removed.
U
O
PPLICATITYPICAL
SA
Accelerometer Amplifier with DC Servo
C1
1250pF
C
F
R
F
–
C
IN
R
C
S
S
+
OUTPUT
1792 F05
Figure 5
ACCELEROMETER
B & K MODEL 4381
OR EQUIVALENT
V
IN
TYPICAL OFFSET ≈ 0.8mV
1% TOLERANCES
FOR V
= – 6dB AT f = 16.3Hz
LOWER RESISTOR VALUES WILL RESULT IN LOWER THERMAL NOISE AND LARGER CAPACITORS
R1
100M
5V TO 15V
–
2
LT1792
+
3
–5V TO –15V
7
4
C2
R3
2µF
2k
–
2
6
LT1792
+
3
6
C3
2µF
R2
18k
R4
20M
R5
20M
1792 TA03
10Hz Fourth Order Chebyshev Lowpass Filter (0.01dB Ripple)
1. ASSUME VOLTAGE NOISE OF LT1792 AND 51Ω SOURCE RESISTOR = 4.3nV/√Hz
2. GAIN WITH n LT1792s IN PARALLEL = n × 200
3. OUTPUT NOISE = √n × 200 × 4.3nV/√Hz
4. INPUT REFERRED NOISE =
5. NOISE CURRENT AT INPUT INCREASES √n TIMES
2
3
–
LT1792
+
–15V
7
6
OUTPUT
4
OUTPUT NOISE = 4.3
n × 200 √n
nV/√H z
1792 TA04
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
11
Page 12
LT1792
PPLICATITYPICAL
Light Balance Detection CircuitUnity-Gain Buffer with Extended
I
1
PD1
I
2
PD2
V
= 1M × (I1 – I2)
OUT
PD1
PD2 = HAMAMATSU S1336-5BK
,
WHEN EQUAL LIGHT ENTERS PHOTODIODES, V
2pF TO 8pF
–
LT1792
+
PACKAGEDESCRIPTI
1M
R1
C1
O
O
U
SA
Load Capacitance Drive Capability
–
LT1792
+
V
IN
C1 = CL ≤ 0.1µF
OUTPUT SHORT-CIRCUIT CURRENT
(∼ 30mA) WILL LIMIT THE RATE AT WHICH THE
VOLTAGE CAN CHANGE ACROSS LARGE CAPACITORS
dV
I = C
()
dt
OUT
1792 TA07
< 3mV.
V
OUT
U
Dimensions in inches (millimeters) unless otherwise noted.
R2
1k
C1
R1
33Ω
C
L
1792 TA08
V
OUT
N8 Package
8-Lead PDIP (Narrow 0.300)
(LTC DWG # 05-08-1510)
0.400*
(10.160)
MAX
876
0.255 ± 0.015*
(6.477 ± 0.381)
1234
0.300 – 0.325
(7.620 – 8.255)
0.065
0.009 – 0.015
(0.229 – 0.381)
+0.035
0.325
–0.015
+0.889
8.255
()
–0.381
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)
(1.651)
TYP
0.100 ± 0.010
(2.540 ± 0.254)
0.045 – 0.065
(1.143 – 1.651)
5
0.130 ± 0.005
(3.302 ± 0.127)
0.125
(3.175)
MIN
0.018 ± 0.003
(0.457 ± 0.076)
0.020
(0.508)
MIN
N8 1197
S8 Package
8-Lead Plastic Small Outline (Narrow 0.150)
(LTC DWG # 05-08-1610)
0.228 – 0.244
(5.791 – 6.197)
0.010 – 0.020
(0.254 – 0.508)
0.008 – 0.010
(0.203 – 0.254)
DIMENSION DOES NOT INCLUDE MOLD FLASH.
*
MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
DIMENSION DOES NOT INCLUDE INTERLEAD FLASH.
**
INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
× 45°
0.016 – 0.050
0.406 – 1.270
0°– 8° TYP
0.053 – 0.069
(1.346 – 1.752)
0.014 – 0.019
(0.355 – 0.483)
0.189 – 0.197*
(4.801 – 5.004)
8
1
7
2
6
3
5
0.150 – 0.157**
(3.810 – 3.988)
4
0.004 – 0.010
(0.101 – 0.254)
0.050
(1.270)
TYP
SO8 0996
RELATED PARTS
PART NUMBERDESCRIPTIONCOMMENTS
LT1113Low Noise Dual JFET Op AmpDual Version of LT1792, V
LT1169Low Noise Dual JFET Op AmpDual Version of LT1793, IB = 10pA, V
LT1793Low Noise Single Op AmpLower IB Version of LT1792, IB = 10pA, V
Linear Technology Corporation
12
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear-tech.com
= 4.5nV/√Hz
NOISE
NOISE
1792f LTTP 0599 4K • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1999
= 6nV/√Hz
= 6nV/√Hz
NOISE
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