Datasheet L6562AT Datasheet (ST)

Page 1
Features
Guaranteed for extreme temperature range
(outdoor)
Proprietary multiplier design for minimum THD
protection
Ultra-low (30 μA) start-up current
Low (2.5 mA) quiescent current
Digital leading-edge blanking on current sense
Disable function on E/A input
1% (@ T
-600/+800 mA totem pole gate driver with
active pull-down during UVLO and voltage clamp

Figure 1. Block diagram

= 25 °C) internal reference voltage
J
L6562AT
Transition-mode PFC controller
SO-8DIP-8
DIP-8/SO-8 packages
Applications
PFC pre-regulators for:
Street lighting
IEC61000-3-2 compliant SMPS (Flat TV,
monitors, desktop PC, games)
Electronic ballast

Table 1. Device summary

Order codes Package Packaging
L6562ATN DIP-8 Tube
L6562ATD
L6562ATDTR Tape and reel
March 2009 Rev 2 1/25
SO-8
Tu be
www.st.com
25
Page 2
Contents L6562AT
Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Pin settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
6 Typical electrical characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
7 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
7.1 Overvoltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
7.2 Disable function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7.3 THD optimizer circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7.4 Operating with no auxiliary winding on the boost inductor . . . . . . . . . . . . 15
7.5 Comparison between the L6562AT and the L6562 . . . . . . . . . . . . . . . . . 16
8 Application examples and ideas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
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Page 3
Description L6562AT

1 Description

The L6562AT is a current-mode PFC controller operating in transition mode (TM). Coming with the same pin-out as its predecessors L6561 and L6562, it offers improved performance.
The highly linear multiplier includes a special circuit, able to reduce AC input current distortion, that allows wide-range-mains operation with an extremely low THD, even over a large load range.
The output voltage is controlled by means of a voltage-mode error amplifier and an accurate (1% @T
The device features extremely low consumption (60 µA max. before start-up and < 5.5 mA operating) and includes a disable function suitable for IC remote ON/OFF, which makes it easier to comply with energy saving requirements (Blue Angel, EnergyStar, Energy2000, etc.).
An effective two-step OVP enables to safely handle over-voltages either occurring at start­up or resulting from load disconnection.
The totem-pole output stage, capable of 600 mA source and 800 mA sink current, is suitable to drive high current MOSFETs or IGBTs. This, combined with the other features and the possibility to operate with the proprietary fixed-off-time control, makes the device an excellent low-cost solution for EN61000-3-2 compliant SMPS in excess of 350 W.
= 25 °C) internal voltage reference.
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3/25
Page 4
Pin settings L6562AT

2 Pin settings

2.1 Pin connection

Figure 2. Pin connection (top view)

2.2 Pin description

Table 2. Pin description

Pin N° Name Description
Inverting input of the error amplifier. The information on the output voltage of
1INV
2COMP
3MULT
4CS
5ZCD
the PFC pre-regulator is fed into this pin through a resistor divider. The pin doubles as an ON/OFF control input.
Output of the error amplifier. A compensation network is placed between this pin and INV to achieve stability of the voltage control loop and ensure high power factor and low THD.
Main input to the multiplier. This pin is connected to the rectified mains voltage via a resistor divider and provides the sinusoidal reference to the current loop.
Input to the PWM comparator. The current flowing in the MOSFET is sensed through a resistor, the resulting voltage is applied to this pin and compared with an internal sinusoidal-shaped reference, generated by the multiplier, to determine MOSFET’s turn-off. The pin is equipped with 200 ns leading-edge blanking for improved noise immunity.
Boost inductor’s demagnetization sensing input for transition-mode operation. A negative-going edge triggers MOSFET’s turn-on.
INV
COMP
MULT
CS
1
2
3
4
Vcc
8
GD
7
GND
6
ZCD
5
6 GND Ground. Current return for both the signal part of the IC and the gate driver.
Gate driver output. The totem pole output stage is able to drive power
7GD
8Vcc
4/25
MOSFET’s and IGBT’s with a peak current of 600 mA source and 800 mA sink. The high-level voltage of this pin is clamped at about 12 V to avoid excessive gate voltages in case the pin is supplied with a high Vcc.
Supply voltage of both the signal part of the IC and the gate driver. The supply voltage upper limit is extended to 22 V min. to provide more headroom for supply voltage changes.
Page 5
Maximum ratings L6562AT

3 Maximum ratings

Table 3. Absolute maximum ratings

Symbol Pin Parameter Value Unit
V
CC
I
GD
--- 1 to 4 Analog inputs and outputs -0.3 to 8 V
I
ZCD
8 IC supply voltage (ICC 20 mA) Self-limited V
7 Output totem pole peak current Self-limited A
5 Zero current detector max. current ±10 mA

4 Thermal data

Table 4. Thermal data

Symbol Parameter
R
P
T
thJA
TOT
T
STG
Max. thermal resistance, junction-to­ambient
Power dissipation @TA = 50 °C 0.65 1 W
Junction temperature operating range -40 to 150 °C
J
Storage temperature -55 to 150 °C
Val ue
Unit
SO8 DIP8
150 100 °C/W
5/25
Page 6
Electrical characteristics L6562AT

5 Electrical characteristics

-40 °C < TJ < +125 °C, VCC = 12 V, CO = 1 nF; unless otherwise specified

Table 5. Electrical characteristics

Symbol Parameter Test condition Min Typ Max Unit
Supply voltage
V
Vcc
Vcc
CC
Operating range After turn-on 10.5 22.5 V
Turn-on threshold
On
Turn-off threshold
Off
(1)
(1)
11.7 12.5 13.3 V
9.5 10 10.5 V
Hys Hysteresis 2.2 2.8 V
V
Zener voltage ICC = 20 mA 22.5 25 28 V
Z
Supply current
I
start-up
I
I
CC
I
Start-up current Before turn-on, VCC = 11 V 30 60 µA
Quiescent current After turn-on 2.5 3.9 mA
q
Operating supply current @ 70 kHz 3.5 5.5 mA
Quiescent current
q
During OVP (either static or dynamic)
150 mV
or V
INV
1.7 2.2 mA
Multiplier input
I
MULT
V
MULT
VcsΔ
---------------------
V
Δ
MULT
K Gain
Input bias current V
= 0 to 4 V -1 µA
MULT
Linear operation range 0 to 3 V
= 0 to 1 V,
V
Output max. slope
(2)
MULT
V
COMP
V
MULT
= 1 V, V
= Upper clamp
COMP
11.1 V/V
= 4 V, 0.32 0.38 0.47 V
Error amplifier
= 25 °C 2.475 2.5 2.525
T
V
I
INV
INV
Voltage feedback input threshold
Line regulation V
Input bias current V
J
10.5 V < V
= 10.5 V to 22.5 V 2 5 mV
CC
= 0 to 3 V -1 µA
INV
< 22.5 V
CC
(1)
2.44 2.545
Gv Voltage gain Open loop 60 80 dB
GB Gain-bandwidth product 1 MHz
I
COMP
V
COMP
V
INVdis
V
INVen
Source current V
Sink current V
Upper clamp voltage I
Lower clamp voltage I
Disable threshold 150 200 250 mV
Restart threshold 380 450 520 mV
COMP
COMP
SOURCE
= 0.5 mA
SINK
= 4 V, V
= 4 V, V
= 2.4 V -2 -3.5 -5 mA
INV
= 2.6 V 2.5 4.5 mA
INV
= 0.5 mA 5.1 5.7 6 V
(1)
2.12.252.4 V
6/25
V
Page 7
Electrical characteristics L6562AT
(
Table 5. Electrical characteristics (continued)
Symbol Parameter Test condition Min Typ Max Unit
Output overvoltage
I
OVP
Dynamic OVP triggering current
Hys Hysteresis
Static OVP threshold
Current sense comparator
td
Vcs
I
t
V
LEB
CS
(H-L)
CS
Input bias current VCS = 0 -1 µA
Leading edge blanking 100 200 300 ns
Delay to output 175 ns
Current sense clamp V
Current sense offset
offset
Zero current detector
V
V
V
V
ZCDH
ZCDL
ZCDA
ZCDT
Upper clamp voltage I
Lower clamp voltage I
Arming voltage (positive-going edge)
Triggering voltage (negative-going edge)
19.5 27 30.5 µA
(3)
(1)
= Upper clamp, Vmult = 1.5 V 1.0 1.08 1.16 V
COMP
V
= 0 25
MULT
= 2.5 V 5
V
MULT
= 2.5 mA 5.0 5.7 6.5 V
ZCD
= - 2.5 mA -0.5 0 0.5 V
ZCD
(3)
(3)
2.12.252.4 V
20 µA
1.4 V
0.7 V
mV
I
ZCDb
I
ZCDsrc
I
ZCDsnk
Input bias current V
= 1 to 4.5 V 2 µA
ZCD
Source current capability -1.5 mA
Sink current capability 1.5 mA
Starter
t
START
Start timer period 75 190 300 µs
Gate driver
V
OL
V
OH
I
srcpk
I
snkpk
t
t
V
Oclamp
1. All the parameters are in tracking
2. The multiplier output is given by:
3. Parameters guaranteed by design, functionality tested in production.
Output low voltage I
Output high voltage I
= 100 mA 0.6 1.2 V
sink
= 5 mA 9.5 10.3 V
source
Peak source current -0.6 A
Peak sink current 0.8 A
Voltage fall time 30 70 ns
f
Voltage rise time 60 130 ns
r
Output clamp voltage I
UVLO saturation Vcc = 0 to V
=
= 5 mA; Vcc = 20 V 10 12 15 V
source
, I
CCon
sink
COMPMULTcs
= 2 mA 1.1 V
)
5.2VVK V
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Page 8
Typical electrical characteristic L6562AT
pj
pj

6 Typical electrical characteristic

Figure 3. Supply current vs supply
10.00
1.00
0.10
Icc (mA)
0.01
0.00
0.00 5. 00 10. 00 15.00 20.00 25.00
Figure 5. IC consumption vs T
10
1
voltage
Vcc (V)
Co = 1 nF f = 70 kHz Tj = 25°C
J
Ope rat ing
Quiescent
Disabled or during OVP

Figure 4. Start-up and UVLO vs TJ

13
Vcc-ON
12
11
(V)
10
Vcc-OFF
9
-50 0 50 100 150
Figure 6. Vcc Zener voltage vs T
28
27
26
Tj (°C)
J
Icc (mA)
0.01
0.1
-50 0 50 100 150
Tj (°C)
Vcc = 12 V Co= 1 nF f = 70 kHz
Before start-up
8/25
25
VccZ (V)
24
23
22
-50 0 50 100 150
Tj (°C)
Page 9
Typical electrical characteristic L6562AT
j
Figure 7. Feedback reference vs T
2.6
Vcc = 12V
2.55
2.5
VREF (V)
2.45
2.4
-50 0 50 100 150
Figure 9. E/A output clamp levels vs TJFigure 10. Delay-to-output vs T
6
5
4
3
V COMP pin2 (V)
2
Tj (°C)
Uppe r cl am p
Vcc = 12V
Lower clam p
Figure 8. OVP current vs T
J
35
34
33
32
31
30
29
Iovp (uA)
28
27
26
25
24
23
-50 0 50 100 150
300
200
tD (H-L) (ns)
100
J
Tj (°C)
Vcc = 12V
J
Vcc = 12V
1
-50 0 50 100 150
Tj (°C)
9/25
0
-50 0 50 100 150 Tj (°C)
Page 10
Typical electrical characteristic L6562AT
p
V
pj
pj

Figure 11. Multiplier characteristic Figure 12. Vcs clamp vs T

1.2
Upper Volt. Clamp
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Vcs (pi n4) (V)
0.4
0.3
0.2
0.1
0.0
-0.1
Figure 13. ZCD clamp levels vs T
7
6
5
4
3
Vzcd (V)
2
5.75 V
5 V
4.5V
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
VMULT (pin3) (V)
V COMP (pin2) (V
4 V
J
Uppe r cl am p
Vcc = 12V
IZCD = ±2. 5 mA
3.5V
3 V
2.5
1.3
)
1.2
Vcsx (V)
1.1
1
-50 0 50 100 150
Tj (°C)
Figure 14. Start-up timer vs T
200
190
180
Tstart (us)
170
J
Vcc = 12V
VCOMP = Upper clamp
J
Vcc = 12V
1
0
-1
-50 0 50 100 150 Tj (°C)
Lower clam p
160
150
-50 0 50 100 150 Tj (°C)
10/25
Page 11
Typical electrical characteristic L6562AT
Figure 15. Gate-driver output low
5.00
4.00
3.00
Vpin7 (V)
2.00
1.00
0.00 0 200 400 600 800 1000
Figure 17. Gate-drive clamp vs T
13.5
13.25
13
Vpin 7 clamp (V)
12.75
saturation
I GD (mA)
Tj = 25 °C
Vcc = 12V
SINK
J
Vcc = 20V
Figure 16. Gate-drive output high
saturation
12.00
11.00
10.00
9.00
Vpin7 (V)
8.00
7.00
6.00
0 200 400 600
I GD (mA)
Figure 18. Output gate drive low
saturation vs T
1.1
1
Vcc = 11V
0.9
Vcc = 0V
0.8
Vpin7 (V)
0.7
0.6
during UVLO
J
Isink = 2 m A
Tj = 25 °C
Vcc = 12V
SOURCE
12.5
-50 0 50 100 150 Tj (°C)
11/25
0.5
-50 0 50 100 150 Tj (°C)
Page 12
Application information L6562AT

7 Application information

7.1 Overvoltage protection

Under steady-state conditions, the voltage control loop keeps the output voltage Vo of a PFC pre-regulator close to its nominal value, set by the resistors R1 and R2 of the output divider. Neglecting ripple components, the current through R1, I I
. Considering that the non-inverting input of the error amplifier is internally referenced at
R2
2.5 V, also the voltage at pin INV will be 2.5 V, then:
Equation 1
V
I
R2IR1
2.5
------- -
R2
O
--------------------- -===
2.5
R1
If the output voltage experiences an abrupt change ΔVo > 0 due to a load drop, the voltage at pin INV will be kept at 2.5 V by the local feedback of the error amplifier, a network connected between pins INV and COMP that introduces a long time constant to achieve high PF (this is why ΔVo can be large). As a result, the current through R2 will remain equal to 2.5/R2 but that through R1 will become:
, equals that through R2,
R1
Equation 2
VO2.5 VOΔ+
I'
--------------------------------------- -=
R1
R1
The difference current ΔIR1=I'R1-IR2=I'R1-IR1= ΔVo/R1 will flow through the compensation network and enter the error amplifier output (pin COMP). This current is monitored inside the device and if it reaches about 24 µA the output voltage of the multiplier is forced to decrease, thus smoothly reducing the energy delivered to the output. As the current exceeds 27 µA, the OVP is triggered (Dynamic OVP): the gate-drive is forced low to switch off the external power transistor and the IC put in an idle state. This condition is maintained until the current falls below approximately 7 µA, which re-enables the internal starter and allows switching to restart. The output ΔVo that is able to trigger the Dynamic OVP function is then:
Equation 3
Δ
VO = R1 · 20 · 10
- 6
An important advantage of this technique is that the OV level can be set independently of the regulated output voltage: the latter depends on the ratio of R1 to R2, the former on the individual value of R1. Another advantage is the precision: the tolerance of the detection current is 13%, i.e. 13% tolerance on ΔVo. Since ΔVo << Vo, the tolerance on the absolute value will be proportionally reduced.
Example: Vo = 400 V, ΔVo = 40 V. Then: R1 = 40 V/27 µA R2 = 1.5 MΩ ·2.5/(400-2.5) = 9.43 kΩ. The tolerance on the OVP level due to the L6562AT will be 40·0.13 = 5.3 V, that is ± 1.2 %.
12/25
1.5 MΩ;
Page 13
Application information L6562AT
When the load of a PFC pre-regulator is very low, the output voltage tends to stay steadily above the nominal value, which cannot be handled by the Dynamic OVP. If this occurs, however, the error amplifier output will saturate low; hence, when this is detected the external power transistor is switched off and the IC put in an idle state (static OVP). Normal operation is resumed as the error amplifier goes back into its linear region. As a result, the device will work in burst-mode, with a repetition rate that can be very low.
When either OVP is activated the quiescent consumption of the IC is reduced to minimize the discharge of the Vcc capacitor and increase the hold-up capability of the IC supply system.

7.2 Disable function

The INV pin doubles its function as a not-latched IC disable: a voltage below 0.2 V shuts down the IC and reduces its consumption at a lower value. To restart the IC, the voltage on the pin must exceed 0.45 V. The main usage of this function is a remote ON/OFF control input that can be driven by a PWM controller for power management purposes. However it also offers a certain degree of additional safety since it will cause the IC to shutdown in case the lower resistor of the output divider is shorted to ground or if the upper resistor is missing or fails open.

7.3 THD optimizer circuit

The device is equipped with a special circuit that reduces the conduction dead-angle occurring to the AC input current near the zero-crossings of the line voltage (crossover distortion). In this way the THD (total harmonic distortion) of the current is considerably reduced.
A major cause of this distortion is the inability of the system to transfer energy effectively when the instantaneous line voltage is very low. This effect is magnified by the high­frequency filter capacitor placed after the bridge rectifier, which retains some residual voltage that causes the diodes of the bridge rectifier to be reverse-biased and the input current flow to temporarily stop.
13/25
Page 14
Application information L6562AT
Figure 19. THD optimization: standard TM PFC controller (left side) and L6562AT
(right side)
Input current Input current
Rectified mains voltage Rectified mains voltage
Imains
Input current
MOSFET's drain voltage
Vdrain
Imains
Input current
MOSFET's drain voltage
Vdrain
To overcome this issue the circuit embedded in the device forces the PFC pre-regulator to process more energy near the line voltage zero-crossings as compared to that commanded by the control loop. This will result in both minimizing the time interval where energy transfer is lacking and fully discharging the high-frequency filter capacitor after the bridge. The effect of the circuit is shown in figure 2, where the key waveforms of a standard TM PFC controller are compared to those of the L6562AT.
Essentially, the circuit artificially increases the ON-time of the power switch with a positive offset added to the output of the multiplier in the proximity of the line voltage zero-crossings. This offset is reduced as the instantaneous line voltage increases, so that it becomes negligible as the line voltage moves toward the top of the sinusoid.
To maximally benefit from the THD optimizer circuit, the high-frequency filter capacitor after the bridge rectifier should be minimized, compatibly with EMI filtering needs. A large capacitance, in fact, introduces a conduction dead-angle of the AC input current in itself ­even with an ideal energy transfer by the PFC pre-regulator - thus making the action of the optimizer circuit little effective.
14/25
Page 15
Application information L6562AT
R

7.4 Operating with no auxiliary winding on the boost inductor

To generate the synchronization signal on the ZCD pin, the typical approach requires the connection between the pin and an auxiliary winding of the boost inductor through a limiting resistor. When the device is supplied by the cascaded DC-DC converter, it is necessary to introduce a supplementary winding to the PFC choke just to operate the ZCD pin.
Another solution could be implemented by simply connecting the ZCD pin to the drain of the power MOSFET through an R-C network as shown in figure 3: in this way the high­frequency edges experienced by the drain will be transferred to the ZCD pin, hence arming and triggering the ZCD comparator.
Also in this case the resistance value must be properly chosen to limit the current sourced/sunk by the ZCD pin. In typical applications with output voltages around 400 V, recommended values for these components are 22 pF (or 33 pF) for C R
. With these values proper operation is guaranteed even with few volts difference
ZCD
between the regulated output voltage and the peak input voltage

Figure 20. ZCD pin synchronization without auxiliary winding

ZCD
C
ZCD
and 330 kΩ for
ZCD
ZCD
5
L6562AT
15/25
Page 16
Application information L6562AT

7.5 Comparison between the L6562AT and the L6562

The L6562AT is not a direct drop-in replacement of the L6562, even if both have the same pin-out. One function (Disable) has been relocated. Table 2 compares the two devices, i.e. those parameters that may result in different values of the external components. The parameters that have the most significant impact on the design, i.e. that definitely require external component changes when converting an L6562­based design to the L6562AT, are highlighted in bold.

Table 6. L6562AT vs L6562

Parameter L6562 L6562AT
IC turn-on and turn-off thresholds (typ.) 12/9.5 V 12.5/10 V
Turn-off threshold spread (max.) ±0.8 V ±0.5 V
IC consumption before start-up (max.) 70 uA 60 uA
Multiplier gain (typ.) 0.6 0.38
Current sense reference clamp (typ.) 1.7 V 1.08 V
Current sense propagation delay (delay-to-output) (typ.) 200 ns 175 ns
Dynamic OVP triggering current (typ.) 40 µA 27 µA
ZCD arm/trigger/clamp thresholds (typ.) 2.1/1.4/0.7 V 1.4/0.7/0 V
Enable threshold (typ.) 0.3 V
Gate-driver internal drop (max.) 2.6 V 2.2 V
Leading-edge blanking on current sense No Yes
Reference voltage accuracy (overall) 2.4% 1.8%
1. Function located on pin 5 (ZCD)
2. Function located on pin 1 (INV)
(1)
0.45 V
(2)
The lower value (-36%) for the clamp level of the current sense reference voltage allows the use of a lower sense resistor for the same peak current, with a proportional reduction of the associated power dissipation. Essentially, the advantage is the reduction of the power dissipated in a single point (hotspot), which is a considerable benefit in applications where heat removal is critical, e.g. in adapters enclosed in a sealed plastic case. The lower value for the dynamic OVP triggering current allows the use of a higher resistance value (+48%) for the upper resistor of the divider sensing the output voltage of the PFC stage (keeping the same overvoltage level) with no significant increase of noise sensitivity. This reduction goes in favor of standby consumption in applications required to comply with energy saving regulations.
16/25
Page 17
Application examples and ideas L6562AT

8 Application examples and ideas

Figure 21. Demonstration board wide-range mains: electrical schematic

Vo=400V
Vo=400V
Po=80W
Po=80W
R11
R11
Ω
Ω
1M
1M
R12
R12 1M
1M
Ω
Ω
C6
C6
47 µF
47 µF 450V
450V
R13B
R13B 82 k
82 k
Ω
Ω
Ω
Ω
F1
F1
4A/250V
4A/250V
Vac
Vac 88V
88V
to
to
264V
264V
R4
R5
R4
R5
Ω
Ω
270 k
270 k
270 k
270 k
R1
R1
1 M
1 M
Ω
Ω
C1
P1
P1
+
+
W08
W08
-
-
Boost Inductor Spec (ITACOIL E2543/E)
Boost Inductor Spec (ITACOIL E2543/E)
C1
0.22 µF
0.22 µF 630V
630V
R2
R2
1 M
1 M
Ω
Ω
C2
C2
10nF
10nF
R3
R3
15 k
15 k
Ω
Ω
E25x13x7 core, N67 ferrite
E25x13x7 core, N67 ferrite
1.5 mm gap for 0. 7 mH primary induct ance
1.5 mm gap for 0. 7 mH primary induct ance Primary: 102 turns 20x0.1 mm
Primary: 102 turns 20x0.1 mm Secondary: 10 turns 0.1 mm
Secondary: 10 turns 0.1 mm
C29
C29
22 µF
22 µF
25V
25V
Ω
Ω
D8
D8
1N4148
1N4148
D2
D2
1N5248B
1N5248B
C5
C5
10 nF
10 nF
VCC
VCC
MULT
MULT
100 nF
100 nF
R14
R14
100
100
Ω
Ω
R6
R6
47 k
47 k
Ω
Ω
ZCD COMP INV
ZCD COMP INV
8
8
3
3
L6562A
GND
GND
C4
C4
T1
T1
C3 - 2200 nF
C3 - 2200 nF
5
21
5
21
L6562A
L6562A
6
6
C23
C23 150 nF
150 nF
CS
CS
R50 - 22 kΩ
R50 - 22 kΩ
GD
GD
7
7
4
4
R15
R15
SHORTED
SHORTED
R8
R8 47k
47k
D1
D1
NTC
NTC
STTH1L06
STTH1L06
2.5
2.5
Ω
Ω
R7
R7 33
33
Ω
Ω
Ω
Ω
R9
R9
0.68 Ω
0.68 Ω
0.25W
0.25W
STP8NM50FP
STP8NM50FP
R10
R10
0.68 Ω
0.68 Ω
0.25W
0.25W
Q1
Q1
R13
R13 15 k
15 k
17/25
Page 18
Application examples and ideas L6562AT
Figure 22. L6562A 80W TM PFC evaluation
board: compliance to EN61000-3-2
0. 1
0.0 1
0.001
Harmonic current (A)
0. 0001
Vin = 230 Vac - 50 Hz, Pout = 80 W THD = 10.48%, PF = 0.973
standard
Mea sur ements @ 230V ac Ful l load EN61000-3 -2 cl ass D li mit s
1
1 3 5 7 9 1113151719212325272931333537 39
Harmonic Order (n)
Figure 24. L6562A 80W TM PFC evaluation
board: input current waveform @230 V-50 Hz – 80W load
Figure 23. L6562A 80W TM PFC evaluation
board: compliance to JEIDA-MITI standard
Measu rem ent s @ 100Vac Full lo ad JEI DA - MITI c l ass D l im i t s
1
0. 1
0.0 1
0.001
Harm onic current (A)
0. 0001 1 3 5 7 9 1113151719212325272931333537 39
Harmonic Order (n)
Vin = 100 Vac - 50 Hz, Pout = 80 W THD = 3.18%, PF = 0.997
Figure 25. L6562A 80W TM PFC evaluation
board: input current waveform @100 V-50 Hz – 80 W load
18/25
Page 19
Application examples and ideas L6562AT
)
Figure 26. L6562A 80W TM PFC evaluation
1.00
0.95
0.90
PF
0.85
0.80
80 100 120 140 160 180 200 220 240 260
board: power factor vs Vin
Pout = 80W
Vin (Vac)
Figure 28. L6562A 80W TM PFC evaluation
board: efficiency vs Vin
100
95
90
85
EFFICIENCY ( %)
80
75
80 100 120 140 160 180 200 220 240 260
Pout = 80W
Vin (Vac)
Figure 27. L6562A 80W TM PFC evaluation
board: THD vs Vin
12
10
8
6
THD (%
4
2
0
80 10 0 12 0 140 160 180 200 220 240 260
Vin (Vac)
Pout = 80W
Figure 29. L6562A 80W TM PFC evaluation
board: static Vout regulation vs Vin
404
403.5
403
402.5
402
Vout (Vdc)
401.5
401
400.5
400
80 100 120 140 160 180 200 220 240 260
Pout = 80W
Vin (V ac)
19/25
Page 20
Application examples and ideas L6562AT
+

Figure 30. Demonstration board EVL6562A-400W, wide-range mains, FOT

12345
+400 Vdc
C7
330uF-450V
R2
NTC 2R5-S237
C6
470nF-630V
D3
STTH8R06
D1
1N5406
D7
1-25- 6
118
L4
PQ40-500uH
C10
33N
R5
47R
R3
180K
R4
D5
D4
LL4148
180K
LL4148
R36
3R9
BZX85-C15
Q2
STP12NM50FP
Q1
STP12NM50FP
D8
LL4148
R17
6R8
R18
6R8
R35
3R9
R23
0R68W
R22
0R39-1W
R21
0R39-1W
R20
0R39-1W
R19
1K0
C20
330pF
C5
470nF-630V
L3
DM-51uH-6A
C4
470nF-630V
C12
+
-
D2
D15XB6 0
~
~
C3
680nF-X2
L2
RES
JP101
JUMPER
1 2
C2
L1
CM-1. 5mH- 5A
C1
R1
F1
8A/250V
JP102
JUMPER
1 2
470nF-X2
470nF-X2
1M5
R10
+400Vdc
47uF/50V
C11
470nF/50V
R12
R11
750k
9.1k
680k
220nF
R14
39k
C13
C14
3.3uF
8
VCCGDGND
INV
123
COMP
D6
LL4148
R15
820
R16
C15
100pF
657
15K
C16
220pF
Q3
R31
1K5
BC857C
ZCD
L6562A
MULT
CS
4
C21
10nF
R34
10k
R33
620k
R32
620k
1
2
J1
90 - 265Vac
20/25
Page 21
Package mechanical data L6562AT

9 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
21/25
Page 22
Package mechanical data L6562AT

Table 7. DIP-8 mechanical data

mm Inch
Dim.
Min Typ Max Min Typ Max
A 3.32 0.131
a1 0.51 0.020
B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022
b1 0.204 0.304 0.008 0.012
D 10.92 0.430
E 7.95 9.75 0.313 0.384
e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300
F 6.6 0.260
I 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060

Figure 31. Package dimensions

22/25
Page 23
Package mechanical data L6562AT

Table 8. SO-8 mechanical data

Dim.
Min Typ Max Min Typ Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
A2 1.10 1.65 0.043 0.065
B 0.33 0.51 0.013 0.020
C 0.19 0.25 0.007 0.010
(1)
D
4.80 5.00 0.189 0.197
E 3.80 4.00 0.15 0.157
e 1.27 0.050
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050
k 0° (min.), 8° (max.)
ddd 0.10 0.004
1. Dimensions D does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15mm (.006inch) in total (both side).
mm. inch

Figure 32. Package dimensions

23/25
Page 24
Revision history L6562AT

10 Revision history

Table 9. Document revision history

Date Revision Changes
19-Jan-2009 1 First release
04-Mar-2009 2 Updated Table 5 on page 6
24/25
Page 25
L6562AT
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