The L6388E is a high voltage gate driver,
manufactured with the BCD ™ “offline”
technology, and able to drive a half-bridge of
power MOSFET/IGBT devices. The high-side
(floating) section is enabled to work with voltage
rail up to 600 V. Both device outputs can sink and
source 650 mA and 400 mA respectively and
cannot be simultaneously driven high thanks to an
integrated interlocking function. Further
prevention from outputs cross conduction is
guaranteed by the deadtime function.
The L6388E device has two input and two output
pins, and guarantees the outputs switch in phase
with inputs. The logic inputs are CMOS/TTL
compatible (3.3 V, 5 V and 15 V) to ease the
interfacing with controlling devices.
The bootstrap diode is integrated in the driver
allowing a more compact and reliable solution.
The L6388E device features the UVLO protection
on both supply voltages (V
ensuring greater protection against voltage drops
on the supply lines.
CC
and V
BOOT
)
Applications
Home appliances
Industrial applications and drives
Motor drivers
– DC, AC, PMDC and PMAC motors
Induction heating
HVAC
Factory automation
Lighting applications
Power supply systems
October 2015DocID13991 Rev 51/18
This is information on a product in full production.
The device is available in a DIP-8 tube and SO-8
tube, and tape and reel packaging options.
1. The circuit guarantees 0.3 V maximum on the pin (at I
“bleeder” resistor connected between the gate and the source of the external MOSFET normally used to
hold the pin low.
Table 6. DC operation electrical characteristics (continued)
Symbol PinParameter Test conditionMin.Typ.Max.Unit
Logic inputs
1. R
V
V
ih
I
ih
I
il
DS(on)
il
Low logic level input voltage1.1V
High logic level input voltage1.8V
1, 2
High logic level input currentVIN = 15 V2070A
Low logic level input currentVIN = 0 V-1A
is tested in the following way:
where:
I
is pin 8 current when V
1
BOOT
= V
BOOT1
, I2 when V
BOOT
= V
BOOT2
.
DocID13991 Rev 57/18
18
Page 8
Waveform definitionsL6388E
DT DT
DT
LIN
HIN
LVG
HVG
Interlocking function
5 Waveform definitions
Figure 3. Deadtime time waveform definition
Figure 4. Propagation delay waveform definition
8/18DocID13991 Rev 5
Page 9
L6388EInput logic
C
EXT
Q
gate
V
gate
-------------- -=
6 Input logic
Input logic is provided with an interlocking circuitry which avoids the two outputs (LVG, HVG)
being active at the same time when both the logic input pins (LIN, HIN) are at a high logic
level. In addition, to prevent cross conduction of the external MOSFETs, after each output is
turned off, the other output cannot be turned on before a certain amount of time (DT) (see
Figure 3).
7 Bootstrap driver
A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode (Figure 5 a). In the L6388E device,
a patented integrated structure replaces the external diode. It is realized by a high voltage
DMOS, driven synchronously with the low-side driver (LVG), with a diode in series, as
shown in Figure 5 b. An internal charge pump (Figure 5 b) provides the DMOS driving
voltage. The diode connected in series to the DMOS has been added to avoid an
undesirable turn-on.
C
BOOT
selection and charging
To choose the proper C
capacitor. This capacitor C
Equation 1
The ratio between the capacitors C
It must be:
E.g.: if Q
is 30 nC and V
gate
300 mV.
If HVG must be supplied for a long period, the C
losses into account.
E.g.: HVG steady-state consumption is typical 250 A, so, if HVG T
supply 1.25 C to C
EXT
The internal bootstrap driver offers important advantages: the external fast recovery diode
can be avoided (it usually has a high leakage current).
This structure can work only if V
LVG is on. The charging time (T
fulfilled and it must be long enough to charge the capacitor.
value, the external MOSFET can be seen as an equivalent
BOOT
is related to the MOSFET total gate charge:
EXT
is 10 V, C
gate
EXT
and C
C
BOOT
EXT
is proportional to the cyclical voltage loss.
BOOT
>>>C
EXT
is 3 nF. With C
selection must also take the leakage
BOOT
= 100 nF the drop is
BOOT
is 5 ms, C
ON
BOOT
. This charge on a 1 F capacitor means a voltage drop of 1.25 V.
is close to GND (or lower) and, at the same time, the
OUT
charge
) of the C
is the time in which both conditions are
BOOT
must
The bootstrap driver introduces a voltage drop due to the DMOS R
(typical value:
DS(on
)
125 ). This drop can be neglected at low switching frequency, but it should be taken into
account when operating at high switching frequency.
DocID13991 Rev 59/18
18
Page 10
Bootstrap driverL6388E
V
dropIcheargRdsonVdrop
Q
gate
T
chearg
------------------- R
dson
==
V
drop
30nC
5 s
-------------- - 125 0.8V=
TO LOAD
H.V.
HVG
a
b
LVG
HVG
LVG
C
BOOT
TO LOAD
H.V.
C
BOOT
D
BOOT
V
BOOT
V
S
V
S
V
OUT
V
BOOT
V
OUT
The following equation is useful to compute the drop on the bootstrap DMOS:
Equation 2
where Q
of the bootstrap DMOS, and T
is the gate charge of the external power MOSFET, R
gate
is the charging time of the bootstrap capacitor.
charge
is the on-resistance
DS(on
)
For example: using a power MOSFET with a total gate charge of 30 nC, the drop on the
bootstrap DMOS is about 1 V, if the T
charge
is 5 s.
In fact:
Equation 3
V
should be taken into account when the voltage drop on C
drop
is calculated: if this drop
BOOT
is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode
can be used.
Figure 5. Bootstrap driver
10/18DocID13991 Rev 5
Page 11
L6388ETypical characteristics
For both high and low side buffers @25˚C Tamb
012345 C (nF)
0
50
100
150
200
250
time
(nsec)
T
r
D99IN1054
T
f
0
246810 12 14 16 V
S
(V)
10
10
2
10
3
10
4
Iq
(μA)
D99IN1055
-45 -250255075100 125
5
6
7
8
9
10
11
12
13
V
BSth1
(V)
Tj (˚C
)
Typ.
@ Vcc = 15V
-45 -250255075100 125
6
7
8
9
10
11
Vccth2(V)
Tj (˚C
)
Typ.
-45 -250255075 100 125
6
7
8
9
10
11
12
13
14
Typ.
@ Vcc = 15V
V
BSth2
(V)
-45-250 255075100125
0
200
400
600
800
1000
current (mA)
Tj (˚C
)
Typ.
@ Vcc = 15V
8 Typical characteristics
Figure 6. Typical rise and fall times
Figure 8. V
vs. load capacitance
UV turn-on threshold
BOOT
vs. temperature
Figure 7. Quiescent current vs. supply
voltage
Figure 9. VCC UV turn-off threshold
vs. temperature
Figure 10. V
UV turn-off threshold
BOOT
vs. temperature
DocID13991 Rev 511/18
Figure 11. Output source current
vs. temperature
18
Page 12
Typical characteristicsL6388E
-45 -250255075100 125
7
8
9
10
11
12
13
Vccth1(V)
Tj (˚C
)
Typ.
-45 -250255075 100 125
0
200
400
600
800
1000
current (mA)
Tj (˚C
)
Typ.
@ Vcc = 15V
Figure 12. VCC UV turn-on threshold
vs. temperature
Figure 13. Output sink current
vs. temperature
12/18DocID13991 Rev 5
Page 13
L6388EPackage information
$0Y
9 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
9.1 DIP-8 package information
Figure 14. DIP-8 package outline
DocID13991 Rev 513/18
18
Page 14
Package informationL6388E
Table 7. DIP-8 package mechanical data
Dimensions (mm)
Symbol
Min.Typ.Max.
A 3.32
a1 0.51
B 1.15 1.65
b 0.356 0.55
b1 0.204 0.304
D 10.92
E 7.95 9.75
e 2.54
e3 7.62
e4 7.62
F 6.6
I 5.08
L 3.18 3.81
Z 1.52
14/18DocID13991 Rev 5
Page 15
L6388EPackage information
$0Y
9.2 SO-8 package information
Figure 15. SO-8 package outline
Table 8. SO-8 package mechanical data
Dimensions (mm)
Symbol
Min.Typ.Max.
A1.75
A10.100.25
A21.25
b0.280.48
c0.170.23
D4.804.905.00
E5.806.006.20
E13.803.904.00
e1.27
h0.250.50
L0.401.27
L11.04
k0°8°
ccc0.10
DocID13991 Rev 515/18
18
Page 16
Order codesL6388E
10 Order codes
Part numberPackagePackaging
L6388EDIP-8Tube
L6388EDSO-8Tube
L6388ED013TRSO-8Tape and reel
Table 9. Order codes
16/18DocID13991 Rev 5
Page 17
L6388ERevision history
11 Revision history
Table 10. Document revision history
DateRevisionChanges
11-Oct-20071First release
Updated Table 2, Table 7 and Section 6.1.
29-Feb-20122
DIP-8 mechanical data and package dimensions have been
updated.
SO-8 mechanical data and package dimensions have been updated.
31-Jan-20133Update note in Section 2.1.
Added Section : Applications on page 1.
Updated Section : Description on page 1 (replaced by new
description).
Updated Table 1: Device summary on page 1 (moved from page 17
to page 1, renamed title of Table 1).
Updated Figure 1: Block diagram on page 3 (moved from page 1 to
page 3, added Section 1: Block diagram on page 3).
19-Jun-20144
Updated Section 2.1: Absolute maximum ratings on page 4
(removed note below Table 2: Absolute maximum ratings).
Updated Table 5: Pin description on page 5 (added “Type” for
several pins).
Updated Section 9: Package information on page 14 (added/updated
titles, reversed order of Figure 14 and Tabl e 8 , Figure 15 and
,Tab le 9 minor modifications).
Minor modifications throughout document.
21-Oct-20155
Updated Table 1 on page 4 (added ESD row).
Updated note 1. below Table 6 on page 6 (replaced V
).
V
BOOTx
CBOOTx
by
Added Section 10: Order codes on page 16 (moved Table 9 from
page 1, updated title).
Minor modifications throughout document.
DocID13991 Rev 517/18
18
Page 18
L6388E
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