The L6386AD is an high-voltage device,
manufactured with the BCD "OFF-LINE"
technology. It has a driver structure that enables
to drive independent referenced Channel Power
MOS or IGBT. The high-side (floating) section is
enabled to work with voltage rail up to 600 V. The
Logic Inputs are CMOS/TTL compatible for ease
of interfacing with controlling devices.
Note:ESD immunity for pins 12, 13 and 14 is guaranteed up to 900V (Human Body Model)
1.2 Thermal data
Table 2.Thermal data
Symbol Parameter SO-14 Unit
Thermal Resistance Junction to ambient165°C/W
R
th(JA)
1.3 Recommended operating conditions
Table 3.Recommended operating conditions
Symbol Pin Parameter Test condition MinTypMaxUnit
V
V
BS
f
sw
V
T
1. If the condition V
2. VBS = V
12Output voltage
out
(2)
14Floating supply voltage
Switching frequency HVG,LVG load CL = 1 nF 400 kHz
cc
4Supply voltage 17V
J
Junction temperature -45 125 °C
- V
boot
- V
boot
out
< 18 V is guaranteed, V
out
can range from -3 to 580 V
out
3/17
(1)
(1)
17 V
580 V
Page 4
Pin connectionL6386AD
2 Pin connection
Figure 2.Pin connection (Top view)
1
2
3
4
5
6
7PGND
D97IN521A
14
13
12
11
10
9
8
Table 4.Pin description
LIN
SD
HIN
V
CC
DIAG
CIN
SGND
N°PinTypeFunction
1 LIN I Low-side driver logic input
2 SD
(1)
I Shut down logic input
3 HIN I High-side driver logic input
4 VCC Low voltage supply
5 DIAG O Open drain diagnostic output
6 CIN I Comparator input
7 SGND Ground
8 PGND Power ground
(1)
9 LVG
O Low-side driver output
10, 11 N.C. Not connected
V
boot
HVG
OUT
N.C.
N.C.
LVG
12 OUT O High-side driver floating driver
(1)
13 HVG
14 V
1. The circuit guarantees 0.3V maximum on the pin (@ Isink = 10 mA), with VCC >3V. This allows to omit the
"bleeder" resistor connected between the gate and the source of the external MOSFET normally used to
hold the pin low; the gate driver assures low impedance also in SD condition.
Note: SD active condition is latched until next negative IN edge.
D97IN522A
7/17
Page 8
Bootstrap driverL6386AD
4 Bootstrap driver
A bootstrap circuitry is needed to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode (Figure 4 a). In the L6386AD a patented
integrated structure replaces the external diode. It is realized by a high voltage DMOS,
driven synchronously with the low side driver (LVG), with in series a diode, as shown in
Figure 4 b. An internal charge pump (Figure 4 b) provides the DMOS driving voltage. The
diode connected in series to the DMOS has been added to avoid undesirable turn on of it.
4.1 C
To choose the proper C
capacitor. This capacitor C
The ratio between the capacitors C
It has to be:
e.g.: if Q
300 mV.
If HVG has to be supplied for a long time, the C
the leakage losses.
e.g.: HVG steady state consumption is lower than 200 µA, so if HVG T
to supply 1 µC to C
The internal bootstrap driver gives great advantages: the external fast recovery diode can
be avoided (it usually has great leakage current).
This structure can work only if V
LVG is on. The charging time (T
fulfilled and it has to be long enough to charge the capacitor.
BOOT
selection and charging
value the external MOS can be seen as an equivalent
BOOT
is related to the MOS total gate charge:
EXT
C
EXT
and C
EXT
C
is 30 nC and V
gate
. This charge on a 1 µF capacitor means a voltage drop of 1 V.
EXT
is 10 V, C
gate
charge
EXT
is close to GND (or lower) and in the meanwhile the
OUT
) of the C
Q
gate
-------------- -=
V
gate
is proportional to the cyclical voltage loss.
BOOT
>>>C
BOOT
EXT
is 3 nF. With C
BOOT
BOOT
= 100 nF the drop would be
BOOT
selection has to take into account also
is 5ms, C
ON
BOOT
has
is the time in which both conditions are
The bootstrap driver introduces a voltage drop due to the DMOS R
125 Ω). At low frequency this drop can be neglected. Anyway increasing the frequency it
must be taken in to account.
The following equation is useful to compute the drop on the bootstrap DMOS:
==
V
dropIcheargRdsonVdrop
where Q
bootstrap DMOS, and T
8/17
is the gate charge of the external power MOS, R
gate
is the charging time of the bootstrap capacitor.
charge
→
Q
gate
-------------------
T
chearg
(typical value:
DS(on)
R
dson
is the on resistance of the
dson
Page 9
L6386ADBootstrap driver
For example: using a power MOS with a total gate charge of 30 nC the drop on the
bootstrap DMOS is about 1 V, if the T
V
drop
V
has to be taken into account when the voltage drop on C
drop
is 5 µs. In fact:
charge
30nC
-------------- -
5µs
125Ω 0.8 V∼⋅=
is calculated: if this drop
BOOT
is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode
can be used.
Figure 4.Bootstrap driver
D
BOOT
V
S
HVG
LVG
ab
V
BOOT
H.V.
C
BOOT
V
OUT
TO LOAD
V
S
HVG
LVG
V
BOOT
H.V.
C
BOOT
V
OUT
TO LOAD
D99IN1056
9/17
Page 10
Typical characteristicL6386AD
5 Typical characteristic
Figure 5.Typical rise and fall times vs
time
(nsec)
250
200
150
100
50
0
load capacitance
D99IN1054
Tr
Tf
012345 C (nF)
For both high and low side buffers @25˚C Tamb
Figure 6.Quiescent current vs supply
Iq
(µA)
4
10
3
10
2
10
10
246810121416V
0
Figure 7.Turn on time vs temperatureFigure 8.V
250
200
150
Typ.
100
Ton (ns)
50
0
-45 -250255075 100 125
@ Vcc = 15V
Tj (°C)
15
14
13
Typ.
12
11
Vbth1 (V)
10
9
8
7
-45 -250255075100 125
voltage
UV turn on threshold
BOOT
vs temperature
@ Vcc = 15V
Tj (°C)
D99IN1057
(V)
S
Figure 9.Turn Off time vs temperature Figure 10. V
250
200
150
Typ.
100
Toff (ns)
50
0
-45 -250255075 100 125
10/17
@ Vcc = 15V
Tj (°C)
UV turn off threshold
BOOT
vs temperature
15
14
13
12
11
Vbth2 (V)
Typ.
10
9
8
7
-45 -250255075 100 125
@ Vcc = 15V
Tj (°C)
Page 11
L6386ADTypical characteristic
Figure 11. Shutdown time vs
250
200
150
tsd (ns0
100
temperature
@ Vcc = 15V
Typ.
50
0
-45 -250255075 100 125
Tj (°C)
Figure 13. VCC UV turn on threshold vs
15
14
13
12
Vccth1(V)
11
10
temperature
Typ.
Figure 12. V
3
UV hysteresis
BOOT
@ Vcc = 15V
2.5
Typ.
2
Vbhys (V)
1.5
1
-45 -250255075100 125
Tj (°C)
Figure 14. Output source current vs
temperature
1000
800
600
Typ.
current (mA)
400
200
@ Vcc = 15V
9
-45 -250255075100 125
Tj (°C)
Figure 15. VCC UV turn off threshold vs
12
11
10
Vccth2(V)
temperature
Typ.
9
8
7
-45 -250255075100 125
Tj (°C)
0
-45 -250255075 100 125
Tj (°C)
Figure 16. Output sink current vs
temperature
1000
800
Typ.
600
400
current (mA)
200
0
-45 -250255075 100 125
@ Vcc = 15V
Tj (°C)
11/17
Page 12
Typical characteristicL6386AD
Figure 17. VCC UV hysteresis vs
2.5
Vcchys (V)
1.5
temperature
3
Typ.
2
1
-45 -250255075 100 125
Tj (°C)
12/17
Page 13
L6386ADPackage mechanical data
6 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
13/17
Page 14
Package mechanical dataL6386AD
Figure 18. SO-14 mechanical data and package dimensions
DIM.
A1.351.75 0.0530.069
A10.100.30 0.0040.012
A21.101.65 0.0430.065
B0.330.51 0.0130.020
C0.190.25 0.0070.01
(1)
D
E3.804.00.1500.157
e1.270.050
H5.86.200.2280.244
h0.250.500.010.02
L0.401.270.0160.050
k0° (min.), 8° (max.)
ddd0.100.004
(1) “D” dimension does not include mold flash, protusions or gate
burrs. Mold flash, protusions or gate burrs shall not ex ceed
0.15mm per side.
mminch
MIN.TYP. MAX. MIN.TYP. MAX.
8.558.75 0.3370.344
OUTLINE AND
MECHANICAL DATA
SO-14
14/17
0016019 D
Page 15
L6386ADOrder codes
7 Order codes
Table 7.Order codes
Order codesPackagePackaging
L6386ADSO-14Tube
L6386AD013TRSO-14Tape and reel
15/17
Page 16
Revision historyL6386AD
8 Revision history
Table 8.Document revision history
DateRevisionChanges
14-Jul-20081First release
16/17
Page 17
L6386AD
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