Datasheet L6386AD Datasheet (ST)

Page 1
Features
L6386AD
High-voltage high and low side driver
■ High voltage rail up to 600 V
■ dV/dt immunity ±50 V/nsec in full temperature
range
– 400 mA source, – 650 mA sink
■ Switching times 50/30 nsec rise/fall with 1nF
load
■ CMOS/TTL Schmitt trigger inputs with
hysteresis and pull down
■ Under voltage lock out on lower and upper
driving section
■ Integrated bootstrap diode
■ Outputs in phase with inputs

Figure 1. Block diagram

BOOTSTRAP DRIVER
V
HIN
SD
LIN
SGND
CC
4
3
2
1
7 6
UV
DETECTION
UV
DETECTION
LEVEL
SHIFTER
LOGIC
SO-14
Description
The L6386AD is an high-voltage device, manufactured with the BCD "OFF-LINE" technology. It has a driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The high-side (floating) section is enabled to work with voltage rail up to 600 V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.
Vboot
VREF
R
R
S
-
+
LVG
DRIVER
V
CC
14
HVG
DRIVER
13
12
H.V.
HVG
OUT
LVG
9
PGND
8
DIAG
5
CIN
C
BOOT
TO LOAD
D97IN520D
July 2008 Rev 1 1/17
www.st.com
17
Page 2
Contents L6386AD
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 AC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 DC operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.3 Timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Bootstrap driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.1 CBOOT selection and charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Typical characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Page 3
L6386AD Electrical data

1 Electrical data

1.1 Absolute maximum ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit
V
V
V
V
V
V
V
dV
P
T
Output voltage -3 to V
out
Supply voltage - 0.3 to +18 V
cc
Floating supply voltage -1 to 618 V
boot
High-side gate output voltage - 1 to V
hvg
Low-side gate output voltage -0.3 to Vcc +0.3 V
lvg
V
Logic input voltage -0.3 to Vcc +0.3 V
i
Open drain forced voltage -0.3 to Vcc +0.3 V
diag
Comparator input voltage -0.3 to 10 V V
cin
/dt Allowed output slew rate 50 V/ns
out
Total power dissipation (TJ = 85 °C) 750 mW
tot
T
Junction temperature 150 °C
j
Storage temperature -50 to 150 °C
stg
- 18 V
boot
V
boot
Note: ESD immunity for pins 12, 13 and 14 is guaranteed up to 900V (Human Body Model)

1.2 Thermal data

Table 2. Thermal data

Symbol Parameter SO-14 Unit
Thermal Resistance Junction to ambient 165 °C/W
R
th(JA)

1.3 Recommended operating conditions

Table 3. Recommended operating conditions

Symbol Pin Parameter Test condition Min Typ Max Unit
V
V
BS
f
sw
V
T
1. If the condition V
2. VBS = V
12 Output voltage
out
(2)
14 Floating supply voltage
Switching frequency HVG,LVG load CL = 1 nF 400 kHz
cc
4 Supply voltage 17 V
J
Junction temperature -45 125 °C
- V
boot
- V
boot
out
< 18 V is guaranteed, V
out
can range from -3 to 580 V
out
3/17
(1)
(1)
17 V
580 V
Page 4
Pin connection L6386AD

2 Pin connection

Figure 2. Pin connection (Top view)

1
2
3
4
5
6
7 PGND
D97IN521A
14
13
12
11
10
9
8

Table 4. Pin description

LIN
SD
HIN
V
CC
DIAG
CIN
SGND
N° Pin Type Function
1 LIN I Low-side driver logic input
2 SD
(1)
I Shut down logic input
3 HIN I High-side driver logic input
4 VCC Low voltage supply
5 DIAG O Open drain diagnostic output
6 CIN I Comparator input
7 SGND Ground
8 PGND Power ground
(1)
9 LVG
O Low-side driver output
10, 11 N.C. Not connected
V
boot
HVG
OUT
N.C.
N.C.
LVG
12 OUT O High-side driver floating driver
(1)
13 HVG
14 V
1. The circuit guarantees 0.3V maximum on the pin (@ Isink = 10 mA), with VCC >3V. This allows to omit the "bleeder" resistor connected between the gate and the source of the external MOSFET normally used to hold the pin low; the gate driver assures low impedance also in SD condition.
O High-side driver output
Bootstrapped supply voltage
boot
4/17
Page 5
L6386AD Electrical characteristics

3 Electrical characteristics

3.1 AC operation

Table 5. AC operation electrical characteristcs (VCC = 15 V; TJ = 25 °C)
Symbol Pin Parameter Test condition Min Typ Max Unit
t
on
1,3 vs
t
off
t
sd
t
r
t
f
High/low-side driver turn-on propagation delay
9,13
High/low-side driver turn-off propagation delay
2 vs
Shut down to high/low side
9,13
propagation delay
Rise time C
9, 13
Fall time CL = 1000 pF 30 ns

3.2 DC operation

Table 6. DC operation electrical characteristcs (VCC = 15 V; TJ = 25 °C)
Symbol Pin Parameter Test condition Min Typ Max Unit
Low supply voltage section
V
ccth1
V
ccth2
V
cchys
I
qccu
I
qcc
Bootstrapped supply section
V
cc
Vcc UV turn off threshold 7.9 8.3 8.8 V
Vcc UV hysteresis 1.3 V
4
Undervoltage quiescent supply current
Quiescent current Vcc = 15 V 250 320 µA
110 150 ns
= 0 V
V
out
110 150 ns
105 150
= 1000 pF 50 ns
L
UV turn on threshold 9.1 9.6 10.1 V
≤ 9 V 200 µA
V
cc
V
bth1
V
V
bth2
V
V
I
qboot
R
DS(on)
bhys
I
14
lk
V
UV turn on threshold 8.5 9.5 10.5 V
boot
UV turn off threshold 7.2 8.2 9.2 V
boot
UV hysteresis 1.3 V
boot
V
quiescent current HVG ON 200 µA
boot
High voltage leakage current
Bootstrap driver on resistance
(1)
Vhvg = Vout = Vboot = 600 V
Vcc ≥ 12.5 V; Vin = 0 V
125 Ω
5/17
10 µA
Page 6
Electrical characteristics L6386AD
Table 6. DC operation electrical characteristcs (continued)(VCC = 15 V; TJ = 25 °C)
Symbol Pin Parameter Test condition Min Typ Max Unit
Driving buffers section
I
so
I
si
9, 13High/low side source short
9, 13High/low side sink short
Logic inputs
V
il
V
ih
1,2,
I
ih
I
il
3
Sense comparator
V
io
I
V
V
1. R
where I
io
ref
DS(on)
6 Input bias current V
2
ol
is tested in the following way:
is pin 14 current when V
1
= Vih (tp < 10 µs) 300 400 mA
V
circuit current
circuit current
IN
VIN = Vil (tp < 10 µs) 500 650 mA
Low level logic voltage 1.5 V
High level logic voltage
3.6 V
High level logic input current VIN = 15 V 50 70 µA
Low level logic input current VIN = 0 V 1 µA
Input offset voltage -10 10 mV
≥ 0.5 0.2 µA
cin
Open drain low level output voltage
Comparator reference voltage
V
R
DSON
CBOOT
CCVCBOOT1
------------------------------------------------------------------------------------------------------ -=
()I2VCC,V
I
1VCC,VCBOOT1
= V
CBOOT1
Iod = -2.5 mA 0.8 V
0.46 0.50 0.54 V
–()VCCV
, I2 when V
CBOOT
()–
= V
–()–
CBOOT2
CBOOT2
CBOOT2
6/17
Page 7
L6386AD Electrical characteristics

3.3 Timing diagram

Figure 3. Input/output timing diagram

HIN
LIN
SD
HOUT LOUT
V
REF
V
CIN
DIAG
Note: SD active condition is latched until next negative IN edge.
D97IN522A
7/17
Page 8
Bootstrap driver L6386AD

4 Bootstrap driver

A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode (Figure 4 a). In the L6386AD a patented integrated structure replaces the external diode. It is realized by a high voltage DMOS, driven synchronously with the low side driver (LVG), with in series a diode, as shown in
Figure 4 b. An internal charge pump (Figure 4 b) provides the DMOS driving voltage. The
diode connected in series to the DMOS has been added to avoid undesirable turn on of it.
4.1 C
To choose the proper C capacitor. This capacitor C
The ratio between the capacitors C It has to be:
e.g.: if Q 300 mV.
If HVG has to be supplied for a long time, the C the leakage losses.
e.g.: HVG steady state consumption is lower than 200 µA, so if HVG T to supply 1 µC to C
The internal bootstrap driver gives great advantages: the external fast recovery diode can be avoided (it usually has great leakage current).
This structure can work only if V LVG is on. The charging time (T fulfilled and it has to be long enough to charge the capacitor.
BOOT
selection and charging
value the external MOS can be seen as an equivalent
BOOT
is related to the MOS total gate charge:
EXT
C
EXT
and C
EXT
C
is 30 nC and V
gate
. This charge on a 1 µF capacitor means a voltage drop of 1 V.
EXT
is 10 V, C
gate
charge
EXT
is close to GND (or lower) and in the meanwhile the
OUT
) of the C
Q
gate
-------------- -=
V
gate
is proportional to the cyclical voltage loss.
BOOT
>>>C
BOOT
EXT
is 3 nF. With C
BOOT
BOOT
= 100 nF the drop would be
BOOT
selection has to take into account also
is 5ms, C
ON
BOOT
has
is the time in which both conditions are
The bootstrap driver introduces a voltage drop due to the DMOS R 125 Ω). At low frequency this drop can be neglected. Anyway increasing the frequency it must be taken in to account.
The following equation is useful to compute the drop on the bootstrap DMOS:
==
V
dropIch eargRdsonVdrop
where Q bootstrap DMOS, and T
8/17
is the gate charge of the external power MOS, R
gate
is the charging time of the bootstrap capacitor.
charge
→
Q
gate
-------------------
T
ch earg
(typical value:
DS(on)
R
dson
is the on resistance of the
dson
Page 9
L6386AD Bootstrap driver
For example: using a power MOS with a total gate charge of 30 nC the drop on the bootstrap DMOS is about 1 V, if the T
V
drop
V
has to be taken into account when the voltage drop on C
drop
is 5 µs. In fact:
charge
30nC
-------------- -
5µs
125Ω 0.8 V∼⋅=
is calculated: if this drop
BOOT
is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used.

Figure 4. Bootstrap driver

D
BOOT
V
S
HVG
LVG
ab
V
BOOT
H.V.
C
BOOT
V
OUT
TO LOAD
V
S
HVG
LVG
V
BOOT
H.V.
C
BOOT
V
OUT
TO LOAD
D99IN1056
9/17
Page 10
Typical characteristic L6386AD

5 Typical characteristic

Figure 5. Typical rise and fall times vs
time
(nsec)
250
200
150
100
50
0
load capacitance
D99IN1054
Tr
Tf
0 1 2 3 4 5 C (nF)
For both high and low side buffers @25˚C Tamb
Figure 6. Quiescent current vs supply
Iq
(µA)
4
10
3
10
2
10
10
246810121416V
0
Figure 7. Turn on time vs temperature Figure 8. V
250
200
150
Typ.
100
Ton (ns)
50
0
-45 -25 0 25 50 75 100 125
@ Vcc = 15V
Tj (°C)
15
14
13
Typ.
12
11
Vbth1 (V)
10
9
8
7
-45 -25 0 25 50 75 100 125
voltage
UV turn on threshold
BOOT
vs temperature
@ Vcc = 15V
Tj (°C)
D99IN1057
(V)
S
Figure 9. Turn Off time vs temperature Figure 10. V
250
200
150
Typ.
100
Toff (ns)
50
0
-45 -25 0 25 50 75 100 125
10/17
@ Vcc = 15V
Tj (°C)
UV turn off threshold
BOOT
vs temperature
15
14
13
12
11
Vbth2 (V)
Typ.
10
9
8
7
-45 -25 0 25 50 75 100 125
@ Vcc = 15V
Tj (°C)
Page 11
L6386AD Typical characteristic
Figure 11. Shutdown time vs
250
200
150
tsd (ns0
100
temperature
@ Vcc = 15V
Typ.
50
0
-45 -25 0 25 50 75 100 125 Tj (°C)
Figure 13. VCC UV turn on threshold vs
15
14
13
12
Vccth1(V)
11
10
temperature
Typ.
Figure 12. V
3
UV hysteresis
BOOT
@ Vcc = 15V
2.5
Typ.
2
Vbhys (V)
1.5
1
-45 -25 0 25 50 75 100 125 Tj (°C)
Figure 14. Output source current vs
temperature
1000
800
600
Typ.
current (mA)
400
200
@ Vcc = 15V
9
-45 -25 0 25 50 75 100 125 Tj (°C)
Figure 15. VCC UV turn off threshold vs
12
11
10
Vccth2(V)
temperature
Typ.
9
8
7
-45 -25 0 25 50 75 100 125
Tj (°C)
0
-45 -25 0 25 50 75 100 125 Tj (°C)
Figure 16. Output sink current vs
temperature
1000
800
Typ.
600
400
current (mA)
200
0
-45 -25 0 25 50 75 100 125
@ Vcc = 15V
Tj (°C)
11/17
Page 12
Typical characteristic L6386AD
Figure 17. VCC UV hysteresis vs
2.5
Vcchys (V)
1.5
temperature
3
Typ.
2
1
-45 -25 0 25 50 75 100 125 Tj (°C)
12/17
Page 13
L6386AD Package mechanical data

6 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
13/17
Page 14
Package mechanical data L6386AD

Figure 18. SO-14 mechanical data and package dimensions

DIM.
A 1.35 1.75 0.053 0.069
A1 0.10 0.30 0.004 0.012
A2 1.10 1.65 0.043 0.065
B 0.33 0.51 0.013 0.020
C 0.19 0.25 0.007 0.01
(1)
D
E 3.80 4.0 0.150 0.157
e 1.27 0.050
H 5.8 6.20 0.228 0.244
h 0.25 0.50 0.01 0.02
L 0.40 1.27 0.016 0.050
k 0° (min.), 8° (max.)
ddd 0.10 0.004
(1) “D” dimension does not include mold flash, protusions or gate
burrs. Mold flash, protusions or gate burrs shall not ex ceed
0.15mm per side.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
8.55 8.75 0.337 0.344
OUTLINE AND
MECHANICAL DATA
SO-14
14/17
0016019 D
Page 15
L6386AD Order codes

7 Order codes

Table 7. Order codes

Order codes Package Packaging
L6386AD SO-14 Tube
L6386AD013TR SO-14 Tape and reel
15/17
Page 16
Revision history L6386AD

8 Revision history

Table 8. Document revision history

Date Revision Changes
14-Jul-2008 1 First release
16/17
Page 17
L6386AD
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