Datasheet L6382D Datasheet (ST)

Page 1
Features
Integrated high-voltage start-up
4 drivers for PFC, half-bridge & pre-heating
3.3V microcontroller compatible
Fully integrate power management for all
operating modes
Internal two point V
Over-current protection with digital output
signal
Cross-conduction protection (interlocking)
Under voltage lock-out
Integrated bootstrap diode
regulator
CC
L6382D
Power management unit
for microcontrolled ballast
SO-20
Description
The L6382D is suitable for microcontrolled electronic ballasts embedding a PFC stage and a half-bridge stage. The L6382D includes 4 MOSFET driving stages (for the PFC, for the half bridge, for the preheating MOSFET) plus a power management unit (PMU) featuring also a reference able to supply the microcontroller in any condition.
Applications
Dimmable / non-dimmable ballast

Figure 1. Block diagram

Besides increasing the application efficiency, the L6382D reduces the bill of materials because different tasks (regarding drivers and power management) are performed by a single IC, which improves the application reliability.
µ
March 2007 Rev 6 1/22
www.st.com
22
Page 2
Contents L6382D
Contents
1 Device description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Pin settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Typical electrical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.1 Power management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.1.1 START-UP mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.1.2 SAVE Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6.1.3 OPERATING Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6.1.4 Shut down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Block description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7.1 Supply section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7.2 3.3V reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
7.3 Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
7.4 Internal logic, over current protection (OCP) and interlocking function . . 17
8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
9 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
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Page 3
L6382D Device description

1 Device description

Designed in High-voltage BCD Off-line technology, the L6382D is a PFC and ballast controller provided with 4 inputs pin and a high voltage start-up generator conceived for applications managed by a microcontroller providing the maximum flexibility. It allows the designer to use the same ballast circuit for different lamp wattage/type by simply changing the µC software.
The digital input pins - able to receive signals up to 400KHz - are connected to level shifters that provide the control signals to their relevant drivers; in particular the L6382D embeds one driver for the PFC pre-regulator stage, two drivers for the ballast half-bridge stage (High Voltage, including also the bootstrap function) and the last one to provide supplementary features like preheating of filaments supplied through isolated windings in dimmable applications.
A precise reference voltage (+3.3V ±1%) able to provide up to 30mA is available to supply the µC: this current is obtained thanks to the on-chip high voltage start-up generator that, moreover, keeps the consumption before start-up below 150µA.
The chip has been designed with advanced power management logic to minimize power losses and increase the application reliability.
In the half-bridge section, a patented integrated bootstrap section replaces the external bootstrap diode.
The L6382D integrates also a function that regulates the IC supply voltage (without the need of any external charge pump) and optimizes the current consumption.

Figure 2. Typical system block diagram

3/22
Page 4
Pin settings L6382D

2 Pin settings

2.1 Pin connection

Figure 3. Pin connection (top view)

2.2 Pin description

Table 1. Pin description
Name Pin N° Description
1PFI
2LSI
3HSI
Digital input signal to control the PFC gate driver. This pin has to be connected to a TTL compatible signal.
Digital input signal to control the half-bridge low side driver. This pin has to be connected to a TTL compatible signal.
Digital input signal to control the half-bridge high side driver. This pin has to be connected to a TTL compatible signal.
PFI
PFI LSI
LSI
HSI
HSI HEI
HEI
PFG
PFG N.C.
N.C. TPR
TPR
GND
GND
LSG
LSG VCC
VCC
1
1 2
2 3
3 4
4 5
5 6
6 7
7 8
8 9
9 10
10
20
20 19
19 18
18 17
17 16
16 15
15 14
14 13
13 12
12 11
11
VREF
VREF CSI
CSI CSO
CSO HEG
HEG N.C.
N.C. HVSU
HVSU N.C.
N.C. OUT
OUT HSG
HSG BOOT
BOOT
4HEI
5PFG
6 N.C. Not connected
7TPR
8GND
4/22
Digital input signal to control the HEG output. This pin has to be connected to a TTL compatible signal.
PFC Driver Output. This pin is intended to be connected to the PFC power MOSFET gate. A resistor connected between this pin and the power MOS gate can be used to reduce the peak current. An internal 10K resistor toward ground avoids spurious and undesired MOSFET turn-on. The totem pole output stage is able to drive the power MOS with a peak current of 120mA source and 250mA sink.
Input for two point regulator; by coupling the pin with a capacitor to a switching circuit, it is possible to implement a charge circuit for the Vcc.
Chip ground. Current return for both the low-side gate-drive currents and the bias current of the IC. All of the ground connections of the bias components should be tied to a trace going to this pin and kept separate from any pulsed current return.
Page 5
L6382D Pin settings
Table 1. Pin description
Name Pin N° Description
Low Side Driver Output. This pin must be connected to the gate of the half­bridge low side power MOSFET. A resistor connected between this pin and the power MOS gate can be used to reduce the peak current.
9LSG
10 Vcc Supply Voltage for the signal part of the IC and for the drivers.
11 BOOT
12 HSG
13 OUT
14 N.C. Not connected
An internal 20K resistor toward ground avoids spurious and undesired MOSFET turn-on. The totem pole output stage is able to drive power with a peak current of 120mA source and 120mA sink.
High-side gate-drive floating supply Voltage. The bootstrap capacitor connected between this pin and pin 13 (OUT) is fed by an internal synchronous bootstrap diode driven in phase with the low-side gate-drive. This patented structure normally replaces the external diode.
High Side Driver Output. This pin must be connected to the gate of the half bridge high side power MOSFET . A resistor connected between this pin and the power MOS gate can be used to reduce the peak current. An internal 20K resistor toward OUT pin avoids spurious and undesired MOSFET turn-on The totem pole output stage is able to drive the power MOS with a peak current of 120mA source and 120mA sink.
High-side gate-drive floating ground. Current return for the high-side gate-drive current. Layout carefully the connection of this pin to avoid too large spikes below ground.
15 HVSU
16 N.C.
17 HEG
18 CSO
19 CSI
20 VREF
High-voltage start-up. The current flowing into this pin charges the capacitor connected between pin Vcc and GND to start up the IC. Whilst the chip is in
mode, the generator is cycled on-off between turn-on and save mode
save voltages. When the chip works in operating and it is re-enabled when the Vcc voltage falls below the UVLO threshold. According to the required V
rectified mains voltage either directly or through a resistor.
High-voltage spacer. The pin is not connected internally to isolate the high­voltage pin and comply with safety regulations (creepage distance) on the PCB.
Output for the HEI block; this driver can be used to drive the MOS employed in isolated filaments preheating. An internal 20K resistor toward ground avoids spurious and undesired MOSFET turn-on.
Output of current sense comparator, compatible with TTL logic signal; during
operating
triggered (CSI> 0.5V typ.) the pin latches high.
Input of current sense comparator, it is enabled only during operating mode; when the pin voltage exceeds the internal threshold, the CSO pin is forced high and the half bridge drivers are disabled. It exits from this condition by either cycling the Vcc below the UVLO or with LGI=HGI=low simultaneously.
Voltage reference. During normal mode an internal generator provides an accurate voltage reference that can be used to supply up to 30mA (during operating mode) to an external circuit. A small film capacitor (0.22µF min.), connected between this pin and GND is recommended to ensure the stability of the generator and to prevent noise from affecting the reference.
mode, the pin is forced low whereas whenever the OC comparator is
pin current, this pin can be connected to the
REF
mode the generator is shut down
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Page 6
Maximum ratings L6382D

3 Maximum ratings

3.1 Absolute maximum ratings

Table 2. Absolute maximum ratings
Symbol Pin Parameter Value Unit
V
CC
V
HVSU
V
BOOT
V
OUT
I
TPR(RMS)
I
TPR(PK)
V
TPR
10 IC supply voltage (ICC = 20mA) Self-limited
15 High voltage start-up generator voltage range -0.3 to 600 V
11 Floating supply voltage
-1 to V
HVSU+VCC
13 Floating ground voltage -1 to 600 V
7 Maximum TPR RMS current ±200 mA
7 Maximum TPR peak current ±600 mA
7
Maximum TPR voltage
(1)
14 V
19 CSI input voltage -0.3 to 7 V
1, 2,
Logic input voltage -0.3 to 7 V
3, 4
9, 12,
Operating frequency 15 to 400 KHz
17
V
5 Operating frequency 15 to 600 KHz
Tstg Storage temperature -40 to +150 °C
T
J
1. Excluding operating mode

3.2 Thermal data

Table 3. Thermal data
Symbol Parameter Value Unit
R
thJA
Maximum thermal resistance junction-ambient 120 °C/W
Ambient temperature operating range -40 to +125 °C
6/22
Page 7
L6382D Electrical characteristics

4 Electrical characteristics

Table 4. Electrical characteristcs (TJ = 25°C, VCC = 13V, C
unless otherwise specified)
DRIVER
= 1nF
Symbol Pin Parameter Test condition Min Typ Max Unit
Supply voltage
V
CCON
V
CCOFF
V
CCSM
VSMhys 10
V
REF(OFF)
10 Turn-on voltage 13 14 15 V
10 Turn-off voltage 7.5 8.25 9.2 V
10 Save mode voltage 12.75 13.8 14.85 V
Save mode hysteresys
0.12 0.16 0.2 V
10 Reference turn-off 5.7 6 6.4 V
IvccON 10 Start-up current 150 µA
IvccSM 10
Ivcc 10
Save Mode current consumption
Quiescent current in operating mode
(1) 150 230 µA
LGI = HGI = high; no load on VREF.
190 µA
2mA
Vz 10 Internal Zener 16.5 17 18 V
High voltage start-up
> 50V
IMSS 15 Maximum current
ILSS 15
Leakage current off state
V
HVSU
V
HVSU
= 600V
20 mA
40 µA
Two point regulator (TPR) protection
T
PR
st
PR
T
(ON)
T
PR
(OFF)
Vcc Protection
10
level
10 Vcc Turn-on level
10 Vcc Turn-off level
Output voltage on
7
state
Forward voltage
7
drop Diode
Leakage current off
7
state
Operating mode 14.0 14.5 15.0 V
Operating mode; after
the first falling edge on
12.5 13 13.5 V
LSG
Operating mode; after the first falling edge on
12.45 12.95 13.48 V
LSG
= 200mA
I
TPR
@ 600mA forward current.
V
= 13V
TPR
2V
2.3 V
A
7/22
Page 8
Electrical characteristics L6382D
Table 4. Electrical characteristcs (TJ = 25°C, VCC = 13V, C
unless otherwise specified)
(continued)
DRIVER
= 1nF
Symbol Pin Parameter Test condition Min Typ Max Unit
LSG, HEG & PFG drivers
V
OH(LS
V
OL(LS)
5, 9
)
17 IHEG = 2.5mA
5, 9
17 IHEG = 2.5mA
HIGH Output Voltage
LOW Output Voltage
Source Current Capability
ILSG = IPFG = 10mA
12.5 V
ILSG=IPFG=10mA
0.5 V
LSG and PFG 120 mA
HEG 50 mA
LSG 120 mA Sink Current Capability
HEG 70
PFG 250
LSG 115 ns
T
RISE
Rise time
HEG 300 ns
PFG 60 ns
LSG 75 ns
T
FAL L
Fall time
HEG 110 ns
PFG 40 ns
LSG; high to low and low
to high
300 ns
T
DELAY
R
B
Propagation delay (input to output)
Pull down Resistor
HSG driver (voltages referred to OUT)
V
OH(HS)
V
OL(HS)
T
RISE
T
FAL L
HIGH Output
12
Voltage
LOW Output
12
Voltage
Sink Current
12
Capability
Source Current
12
Capability
12 Rise time Cload = 1nF 115 ns
12 Fall time Cload = 1nF 75 ns
HEG; high to low and low
to high
200 ns
PFG; high to low 250 ns
PFG; low to high 200 ns
LSG 20 K
HEG 50 K
PFG 10 K
IHSG = 10 mA 12.5 V
IHSG = 10 mA 0.5 V
120 mA
120 mA
8/22
Page 9
L6382D Electrical characteristics
Table 4. Electrical characteristcs (TJ = 25°C, VCC = 13V, C
unless otherwise specified)
(continued)
DRIVER
= 1nF
Symbol Pin Parameter Test condition Min Typ Max Unit
T
DELAY
Propagation delay
12
(LGI to LSG)
R
B
12 Pull down Resistor to OUT 20 K
high to low and low to
high
300 ns
High-side floating gate-driver supply
I
LKBOOT
I
LKOUT
11
current
OUT pin leakage
13
current
BOOT
V
BOOT
V
OUT
= 580V
= 562V
A
A
V
pin leakage
Synchronous
R
DS(on)
bootstrap diode on-
V
LVG
= HIGH
150 W
resistance
V
REF
V
REF
Forward Voltage Drop
Forward Current
20 Reference voltage 15mA load. 3.267 3.3 3.366 V
at 10 mA forward current 2.4 V
at 5V forward voltage
drop
20 mA
20 Load regulation IRef = -3 to +30 mA -20 2 mV
20 Voltage change
15mA load; Vcc = 9V to
15V
15 mV
V
REF
protection
V
REF
@3mA
Current Drive Capability
I
REF
20
20
20
Overcurrent buffer stage
V
CSI
I
CSI
19 Comparator Level 0.537 0.56 0.582 V
19 Input Bias Current 500 nA
Propagation delay CSO turn off to LSG low 200 ns
18 High output voltage
18 Low output voltage
latched
Clamp
2V
from 0 to V
V
CC
during start-up;Vcc from
V
REF(OFF)
shut-down; V
to 0 during
ref
CCON
<2V
1.2 1.4 V
-3 +30 mA
Save mode -3 +10 mA
V
-
I
I
CSO
CSO
= 200µA
= -150µA
REF
0.5V
0.5 V
9/22
Page 10
Electrical characteristics L6382D
Table 4. Electrical characteristcs (TJ = 25°C, VCC = 13V, C
unless otherwise specified)
Symbol Pin Parameter Test condition Min Typ Max Unit
DIM
T
ED
Logic input
1 to 4
1 to 4
LGI Pull down resistor 100 K
(continued)
Normal Mode Time Out
Vref enabling drivers
Time enabling drivers
Low Level Logic Input Voltage
High Level Logic Input Voltage
DRIVER
= 1nF
70 100 130 µs
3.0 V
10 µs
0.8 V
2.2 V
10/22
Page 11
L6382D Typical electrical performance

5 Typical electrical performance

Figure 4. UVLO thresholds [V] vs. T
15
14
13
12
11
10
9
8
7
-40 -25 0 25 50 75 100 125
Figure 6. VREF [V] vs. T
3.5
3.5
3.45
3.45
3.4
3.4
3.35
3.35
3.3
3.3
3.25
3.25
3.2
3.2
3.15
3.15
3.1
3.1
-40 -25 0 25 50 75 100 125
-40 -25 0 25 50 75 100 125
Vcc(on)
Vcc(off)
J
J
Figure 5. VCC zener voltage [V] vs. T
21
21
20
20
19
19
18
18
17
17
16
16
15
15
14
14
-40 -25 0 25 50 75 100 125
-40 -25 0 25 50 75 100 125
Figure 7. Overcurrent protection
threshold [V] vs. T
600
580
560
540
520
500
-40-25 0 25 50 75100125
J
J
Figure 8. Propagation delays [ns] high
300
250
200
150
100
50
0
-40 - 25 0 25 5 0 75 100 125
to low vs. T
HS
J
LS
PF
11/22
Figure 9. Propagation delays [ns] low to
high vs. T
300
250
200
150
100
50
0
HS
-40 -25 0 25 50 75 100 125
J
LS
PF
Page 12
Application information L6382D

6 Application information

6.1 Power management

The L6382D has two stable states (SAVE MODE and OPERATING MODE) and two additional states that manage the Start-up and fault conditions (Figure 10): the Over Current Protection is a parallel asynchronous process enabled when in operating
Following paragraphs will describe each mode and the condition necessary to shift between them.

Figure 10. State diagram

mode.
VCC>V
V
REF
>10µs
T
ED

6.1.1 START-UP mode

With reference to the timing diagram of figure 11, when power is first applied to the converter, the voltage on the bulk capacitor builds up and the HV generator is enabled to operate drawing about 10mA. This current, diminished by the IC consumption (less than 150µA), charges the bypass capacitor connected between pin Vcc and ground and makes its voltage rise almost linear.
START-UP
CC(ON)
SAVE MODE
>3V
&
OPERATING
MODE
VCC<V
REF(OFF)
LGI low
for more
than 100µs
V
CC<VCC(ON)
VCC<V
V
REF(OFF)
SHUT DOWN
< V
CC
CC(OFF)
or
V
<2V
REF
During this phase, all IC's functions are disabled except for:
the current sinking circuit on VREF pin that maintains low the voltage by keeping
disabled the microcontroller connected to this pin;
the High-Voltage Start-Up (HVSU) that is ON (conductive) to charge the external
capacitor on pin Vcc.
As the Vcc voltage reaches the start-up threshold (14V typ.) the chip starts operating and the HV generator is switched off.
12/22
Page 13
L6382D Application information
Summarizing:
the high-voltage start-up generator is active;
–V
is disabled with additional sinking circuit on pin V
REF
enabled;
REF
TPR is disabled;
OCP is disabled;
the drivers are disabled.

6.1.2 SAVE Mode

This mode is entered after the Vcc voltage reaches the turn-on threshold; the V enabled in low current source mode to supply the µC connected to it, whose wake-up required current must be less than 10mA: if no switching activity is detected at LGI input, the high voltage start-up generator cycles ON-OFF keeping the Vcc voltage between VccON and VccSM.
Summarizing:
the high-voltage start-up generator is cycling;
–V
is enabled in low source current capability (I
REF
TPR circuit is disabled;
OCP is disabled;
the drivers are disabled.
If the Vcc voltage falls below the V

6.1.3 OPERATING Mode

After 10µs in save mode and only if the voltage at V edge on the HGI input, the drivers are enabled as well as all the IC's functions; this is the mode correspondent to the proper lamp behavior.
Summarizing:
HVSU is OFF
–V
TPR circuit is enabled
OCP is enabled
the drivers are enabled
is enabled in high source current mode (I
REF
REF(OFF)
is
REF
10mA);
REF
threshold, the device enters the start-up mode.
is higher than 3.0V, on the falling
REF
< 30mA)
REF
If there is no switching activity on LGI for more than 100µs, the IC returns in save

6.1.4 Shut down

This state permits to manage the fault conditions in operating mode and it is entered by the occurrence on one of the following conditions:
1. Vcc<VccOff (Under Voltage fault on Supply),
2. V
<2.0V (Under Voltage fault on V
REF
mode.
)
REF
13/22
Page 14
Application information L6382D
In this state the functions are:
The HVSU generator is ON
–V
is enabled in low source current mode (I
REF
< 10mA)
REF
–TPR is disabled
OCP is disabled
the drivers are disabled
In this state if Vcc reaches VccOn, the device enters the save Vcc<V
REF(OFF)
, also the µC is turned off and the device will be ready to execute the Start-up
sequence.

Figure 11. Timing sequences: TPR behavior

mode otherwise, if
14/22
Page 15
L6382D Application information

Figure 12. Timing sequences: save mode and operating mode

Vcc
Vcc
VCCon
VCCon
VccSM
VccSM
VccOFF
VccOFF
VREF
VREF
LGI
LGI
HGI
HGI
HVSU
HVSU
TPR Switching
TPR Switching
10ms
10ms
µ
OPERATING MODE
OPERATING MODE
15/22
Page 16
Block description L6382D

7 Block description

7.1 Supply section

µPUVLO (µPower Under Voltage Lock Out): This block controls the power
management of the L6382D ensuring the right current consumption in each operating state, the correct V up generator switching. During Start-up the device sinks the current necessary to charge the external capacitor on pin V
from the high voltage bus; in this state the other IC's functions are disabled
CC
and the current consumption of the whole IC is less than 150µA. When the voltage on V µPUVLO block controls Vcc between VccON and VccSM by switching ON/OFF the high voltage start-up generator.
HVSU (High-Voltage Start-Up generator): a 600V internal MOS transistor structure
controls the Vcc supply voltage during start-up reduces the power losses during operating The transistor has a source current capability of up to 30mA.
current capability, the driver enabling and the high-voltage start-
REF
pin reaches VccON, the IC enters the save mode where the
CC
and save mode conditions and it
Mode by switching OFF the MOS transistor.
TPR (Two Point Regulator) & PWS: during normal mode, the TPR block controls the
PSW switch in order to regulate the IC supply voltage (V between TPR(ON) and TPR(OFF) by switching ON and OFF the PSW transistor
Figure 11.
Vcc > TPRst: the PSW is switched ON immediately;
TPR(ON) < Vcc < TPRst: the PSW is switched ON at the following falling edge of
LGI;
Vcc < TPR(OFF): the PSW is switched OFF at the following falling edge on LGI.
When the PSW switch is OFF, the diodes build a charge pump structure so that, connecting the TPR pin to a switching voltage (through a capacitor) it is possible to supply the low voltage section of the chip without adding any further external component. The diodes and the switch are designed to withstand a current of at least 200mA

7.2 3.3V reference voltage

This block is used to supply the microcontroller; this source is able to supply 10mA in save mode and 30mA in operating available, an additional circuit is ensures that, even sinking 3mA, the pin voltage doesn't exceed 1.2V.
The reference is available until Vcc is above V additional sinking circuit is enabled again.
mode; moreover, during start-up when V
REF(OFF)
) to a value in the range
CC
.
RMS
is not yet
REF
; below that it turns off and the
16/22
Page 17
L6382D Block description

7.3 Drivers

LSD (Low Side Driver): it consists of a level shifter from 3.3V logic signal (LSI) to Vcc
MOS driving level; conceived for the half-bridge low-side power MOS, it is able to source and sink 120mA (min).
HSD (Level Shifter and High Side Driver): it consists of a level shifter from 3.3V logic
signal (HGI) to the high side gate driver input up to 600V. Conceived for the half-bridge high-side power MOS, the HSG is able to source and sink 120mA.
PFD (Power Factor Driver): it consists of a level shifter from 3.3V logic signal (PFI) to
Vcc MOS driving level: the driver is able to source 120mA from Vcc to PFG (turn-on) and to sink 250mA to GND (turn-off); it is suitable to drive the MOS of the PFC pre­regulator stage.
HED (Heat Driver): it consists of a level shifter from 3.3V logic signal (HEI) to Vcc MOS
driving level; the driver is able to source 30mA from Vcc to HEG and to sink 75mA to GND and it is suitable for the filament heating when they are supplied by independent winding.
Bootstrap Circuit: it generates the supply voltage for the high side Driver (HSD).
A patented integrated bootstrap section replaces an external bootstrap diode. This section together with a bootstrap capacitor provides the bootstrap voltage to drive the high side power MOSFET. This function is achieved using a high voltage DMOS driver which is driven synchronously with the low side external power MOSFET. For a safe operation, current flow between BOOT pin and Vcc is always inhibited, even though ZVS operation may not be ensured.

7.4 Internal logic, over current protection (OCP) and interlocking function

The DIM (Digital Input Monitor) block manages the input signals delivered to the drivers ensuring that they are low during the described start-up procedure; the DIM block controls the L6382D behaviour during both save
When the voltage on pin CSI overcomes the internal reference of 0.5V (typ.) the block latches the fault condition: in this state the OCP block forces low both HSG and LSG signals while CSO will be forced high. This condition remains latched until LSI and HSI are simultaneously low and CSI is below 0.5V. This function is suitable to implement an over current protection or hard-switching detection by using an external sense resistor. As the voltage on pin CSI can go negative, the current must be limited below 2mA by external components.
Another feature of the DIM block is the internal interlocking that avoids cross-conduction in the half-bridge FET's: if by chance both HGI and LGI input's are brought high at the same time, then LSG and HSG are forced low as long as this critical condition persists.
and operating modes.
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Package mechanical data L6382D

8 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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L6382D Package mechanical data
Table 5. SO-20 Mechanical data
Dim.
mm. inch
Min Typ Max Min Typ Max
A 2.35 2.65 0.093 0.104
A1 0.10 0.30 0.004 0.012
B 0.33 0.51 0.013 0.200
C 0.23 0.32 0.009 0.013
D (1)
12.60 13.00 0.496 0.512
E 7.40 7.60 0.291 0.299
e 1.27 0.050
H 10.0 10.65 0.394 0.419
h 0.25 0.75 0.010 0.030
L 0.40 1.27 0.016 0.050
k 0° (min.), 8° (max.)
ddd 0.10 0.004
Figure 13. Package dimensions
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Order codes L6382D

9 Order codes

Table 6. Order codes
Part number Package Packaging
L6382D SO-20 Tube
L6382DTR SO-20 Tape & Reel
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L6382D Revision history

10 Revision history

Table 7. Revision history
Date Revision Changes
15-Nov-2004 1 First Issue
03-Jan-2005 2 Changed from “Preliminary Data” to “Final Datasheet”
23-Oct-2005 3 Many modified
19-Apr-2006 4 New template
22-May-2006 5 Typo error in block diagram, updated values in electrical
charcteristics Ta b l e 4 .
21-Mar-2007 6 Typo on Ta b le 2
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L6382D
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