The L6382D is suitable for microcontrolled
electronic ballasts embedding a PFC stage and a
half-bridge stage. The L6382D includes 4
MOSFET driving stages (for the PFC, for the half
bridge, for the preheating MOSFET) plus a power
management unit (PMU) featuring also a
reference able to supply the microcontroller in any
condition.
Applications
■ Dimmable / non-dimmable ballast
Figure 1.Block diagram
Besides increasing the application efficiency, the
L6382D reduces the bill of materials because
different tasks (regarding drivers and power
management) are performed by a single IC, which
improves the application reliability.
Designed in High-voltage BCD Off-line technology, the L6382D is a PFC and ballast
controller provided with 4 inputs pin and a high voltage start-up generator conceived for
applications managed by a microcontroller providing the maximum flexibility. It allows the
designer to use the same ballast circuit for different lamp wattage/type by simply changing
the µC software.
The digital input pins - able to receive signals up to 400KHz - are connected to level shifters
that provide the control signals to their relevant drivers; in particular the L6382D embeds
one driver for the PFC pre-regulator stage, two drivers for the ballast half-bridge stage (High
Voltage, including also the bootstrap function) and the last one to provide supplementary
features like preheating of filaments supplied through isolated windings in dimmable
applications.
A precise reference voltage (+3.3V ±1%) able to provide up to 30mA is available to supply
the µC: this current is obtained thanks to the on-chip high voltage start-up generator that,
moreover, keeps the consumption before start-up below 150µA.
The chip has been designed with advanced power management logic to minimize power
losses and increase the application reliability.
In the half-bridge section, a patented integrated bootstrap section replaces the external
bootstrap diode.
The L6382D integrates also a function that regulates the IC supply voltage (without the need
of any external charge pump) and optimizes the current consumption.
Figure 2.Typical system block diagram
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Page 4
Pin settingsL6382D
2 Pin settings
2.1 Pin connection
Figure 3.Pin connection (top view)
2.2 Pin description
Table 1. Pin description
NamePin N°Description
1PFI
2LSI
3HSI
Digital input signal to control the PFC gate driver. This pin has to be connected
to a TTL compatible signal.
Digital input signal to control the half-bridge low side driver. This pin has to be
connected to a TTL compatible signal.
Digital input signal to control the half-bridge high side driver. This pin has to be
connected to a TTL compatible signal.
PFI
PFI
LSI
LSI
HSI
HSI
HEI
HEI
PFG
PFG
N.C.
N.C.
TPR
TPR
GND
GND
LSG
LSG
VCC
VCC
1
1
2
2
3
3
4
4
5
5
6
6
7
7
8
8
9
9
10
10
20
20
19
19
18
18
17
17
16
16
15
15
14
14
13
13
12
12
11
11
VREF
VREF
CSI
CSI
CSO
CSO
HEG
HEG
N.C.
N.C.
HVSU
HVSU
N.C.
N.C.
OUT
OUT
HSG
HSG
BOOT
BOOT
4HEI
5PFG
6N.C.Not connected
7TPR
8GND
4/22
Digital input signal to control the HEG output. This pin has to be connected to a
TTL compatible signal.
PFC Driver Output. This pin is intended to be connected to the PFC power
MOSFET gate. A resistor connected between this pin and the power MOS gate
can be used to reduce the peak current. An internal 10KΩ resistor toward
ground avoids spurious and undesired MOSFET turn-on. The totem pole
output stage is able to drive the power MOS with a peak current of 120mA
source and 250mA sink.
Input for two point regulator; by coupling the pin with a capacitor to a switching
circuit, it is possible to implement a charge circuit for the Vcc.
Chip ground. Current return for both the low-side gate-drive currents and the
bias current of the IC. All of the ground connections of the bias components
should be tied to a trace going to this pin and kept separate from any pulsed
current return.
Page 5
L6382DPin settings
Table 1. Pin description
NamePin N°Description
Low Side Driver Output. This pin must be connected to the gate of the halfbridge low side power MOSFET. A resistor connected between this pin and the
power MOS gate can be used to reduce the peak current.
9LSG
10VccSupply Voltage for the signal part of the IC and for the drivers.
11BOOT
12HSG
13OUT
14N.C.Not connected
An internal 20KΩ resistor toward ground avoids spurious and undesired
MOSFET turn-on.
The totem pole output stage is able to drive power with a peak current of
120mA source and 120mA sink.
High-side gate-drive floating supply Voltage. The bootstrap capacitor
connected between this pin and pin 13 (OUT) is fed by an internal
synchronous bootstrap diode driven in phase with the low-side gate-drive. This
patented structure normally replaces the external diode.
High Side Driver Output. This pin must be connected to the gate of the half
bridge high side power MOSFET . A resistor connected between this pin and
the power MOS gate can be used to reduce the peak current.
An internal 20KΩ resistor toward OUT pin avoids spurious and undesired
MOSFET turn-on
The totem pole output stage is able to drive the power MOS with a peak
current of 120mA source and 120mA sink.
High-side gate-drive floating ground. Current return for the high-side gate-drive
current. Layout carefully the connection of this pin to avoid too large spikes
below ground.
15HVSU
16N.C.
17HEG
18CSO
19CSI
20VREF
High-voltage start-up. The current flowing into this pin charges the capacitor
connected between pin Vcc and GND to start up the IC. Whilst the chip is in
mode, the generator is cycled on-off between turn-on and save mode
save
voltages. When the chip works in operating
and it is re-enabled when the Vcc voltage falls below the UVLO threshold.
According to the required V
rectified mains voltage either directly or through a resistor.
High-voltage spacer. The pin is not connected internally to isolate the highvoltage pin and comply with safety regulations (creepage distance) on the
PCB.
Output for the HEI block; this driver can be used to drive the MOS employed in
isolated filaments preheating. An internal 20KΩ resistor toward ground avoids
spurious and undesired MOSFET turn-on.
Output of current sense comparator, compatible with TTL logic signal; during
operating
triggered (CSI> 0.5V typ.) the pin latches high.
Input of current sense comparator, it is enabled only during operating mode;
when the pin voltage exceeds the internal threshold, the CSO pin is forced
high and the half bridge drivers are disabled. It exits from this condition by
either cycling the Vcc below the UVLO or with LGI=HGI=low simultaneously.
Voltage reference. During normal mode an internal generator provides an
accurate voltage reference that can be used to supply up to 30mA (during
operating mode) to an external circuit. A small film capacitor (0.22µF min.),
connected between this pin and GND is recommended to ensure the stability
of the generator and to prevent noise from affecting the reference.
mode, the pin is forced low whereas whenever the OC comparator is
pin current, this pin can be connected to the
REF
mode the generator is shut down
5/22
Page 6
Maximum ratingsL6382D
3 Maximum ratings
3.1 Absolute maximum ratings
Table 2. Absolute maximum ratings
SymbolPinParameterValueUnit
V
CC
V
HVSU
V
BOOT
V
OUT
I
TPR(RMS)
I
TPR(PK)
V
TPR
10IC supply voltage (ICC = 20mA)Self-limited
15High voltage start-up generator voltage range-0.3 to 600V
11Floating supply voltage
-1 to V
HVSU+VCC
13Floating ground voltage-1 to 600V
7Maximum TPR RMS current ±200mA
7Maximum TPR peak current±600mA
7
Maximum TPR voltage
(1)
14V
19CSI input voltage-0.3 to 7V
1, 2,
Logic input voltage-0.3 to 7V
3, 4
9, 12,
Operating frequency15 to 400KHz
17
V
5Operating frequency15 to 600KHz
TstgStorage temperature -40 to +150°C
T
J
1. Excluding operating mode
3.2 Thermal data
Table 3. Thermal data
SymbolParameterValueUnit
R
thJA
Maximum thermal resistance junction-ambient 120°C/W
The L6382D has two stable states (SAVE MODE and OPERATING MODE) and two
additional states that manage the Start-up and fault conditions (Figure 10): the Over Current
Protection is a parallel asynchronous process enabled when in operating
Following paragraphs will describe each mode and the condition necessary to shift between
them.
Figure 10. State diagram
mode.
VCC>V
V
REF
>10µs
T
ED
6.1.1 START-UP mode
With reference to the timing diagram of figure 11, when power is first applied to the
converter, the voltage on the bulk capacitor builds up and the HV generator is enabled to
operate drawing about 10mA. This current, diminished by the IC consumption (less than
150µA), charges the bypass capacitor connected between pin Vcc and ground and makes
its voltage rise almost linear.
START-UP
CC(ON)
SAVE MODE
>3V
&
OPERATING
MODE
VCC<V
REF(OFF)
LGI low
for more
than 100µs
V
CC<VCC(ON)
VCC<V
V
REF(OFF)
SHUT DOWN
< V
CC
CC(OFF)
or
V
<2V
REF
During this phase, all IC's functions are disabled except for:
●the current sinking circuit on VREF pin that maintains low the voltage by keeping
disabled the microcontroller connected to this pin;
●the High-Voltage Start-Up (HVSU) that is ON (conductive) to charge the external
capacitor on pin Vcc.
As the Vcc voltage reaches the start-up threshold (14V typ.) the chip starts operating and
the HV generator is switched off.
12/22
Page 13
L6382DApplication information
Summarizing:
–the high-voltage start-up generator is active;
–V
is disabled with additional sinking circuit on pin V
REF
enabled;
REF
–TPR is disabled;
–OCP is disabled;
–the drivers are disabled.
6.1.2 SAVE Mode
This mode is entered after the Vcc voltage reaches the turn-on threshold; the V
enabled in low current source mode to supply the µC connected to it, whose wake-up
required current must be less than 10mA: if no switching activity is detected at LGI input, the
high voltage start-up generator cycles ON-OFF keeping the Vcc voltage between VccON
and VccSM.
Summarizing:
–the high-voltage start-up generator is cycling;
–V
is enabled in low source current capability (I
REF
–TPR circuit is disabled;
–OCP is disabled;
–the drivers are disabled.
If the Vcc voltage falls below the V
6.1.3 OPERATING Mode
After 10µs in save mode and only if the voltage at V
edge on the HGI input, the drivers are enabled as well as all the IC's functions; this is the
mode correspondent to the proper lamp behavior.
Summarizing:
–HVSU is OFF
–V
–TPR circuit is enabled
–OCP is enabled
–the drivers are enabled
is enabled in high source current mode (I
REF
REF(OFF)
is
REF
≤ 10mA);
REF
threshold, the device enters the start-up mode.
is higher than 3.0V, on the falling
REF
< 30mA)
REF
If there is no switching activity on LGI for more than 100µs, the IC returns in save
6.1.4 Shut down
This state permits to manage the fault conditions in operating mode and it is entered by the
occurrence on one of the following conditions:
1.Vcc<VccOff (Under Voltage fault on Supply),
2. V
<2.0V (Under Voltage fault on V
REF
mode.
)
REF
13/22
Page 14
Application informationL6382D
In this state the functions are:
–The HVSU generator is ON
–V
is enabled in low source current mode (I
REF
< 10mA)
REF
–TPR is disabled
–OCP is disabled
–the drivers are disabled
In this state if Vcc reaches VccOn, the device enters the save
Vcc<V
REF(OFF)
, also the µC is turned off and the device will be ready to execute the Start-up
sequence.
Figure 11. Timing sequences: TPR behavior
mode otherwise, if
14/22
Page 15
L6382DApplication information
Figure 12. Timing sequences: save mode and operating mode
Vcc
Vcc
VCCon
VCCon
VccSM
VccSM
VccOFF
VccOFF
VREF
VREF
LGI
LGI
HGI
HGI
HVSU
HVSU
TPR Switching
TPR Switching
10ms
10ms
µ
OPERATING MODE
OPERATING MODE
15/22
Page 16
Block descriptionL6382D
7 Block description
7.1 Supply section
●µPUVLO (µPower Under Voltage Lock Out): This block controls the power
management of the L6382D ensuring the right current consumption in each operating
state, the correct V
up generator switching.
During Start-up the device sinks the current necessary to charge the external capacitor
on pin V
from the high voltage bus; in this state the other IC's functions are disabled
CC
and the current consumption of the whole IC is less than 150µA.
When the voltage on V
µPUVLO block controls Vcc between VccON and VccSM by switching ON/OFF the
high voltage start-up generator.
●HVSU (High-Voltage Start-Up generator): a 600V internal MOS transistor structure
controls the Vcc supply voltage during start-up
reduces the power losses during operating
The transistor has a source current capability of up to 30mA.
current capability, the driver enabling and the high-voltage start-
REF
pin reaches VccON, the IC enters the save mode where the
CC
and save mode conditions and it
Mode by switching OFF the MOS transistor.
●TPR (Two Point Regulator) & PWS: during normal mode, the TPR block controls the
PSW switch in order to regulate the IC supply voltage (V
between TPR(ON) and TPR(OFF) by switching ON and OFF the PSW transistor
Figure 11.
–Vcc > TPRst: the PSW is switched ON immediately;
–TPR(ON) < Vcc < TPRst: the PSW is switched ON at the following falling edge of
LGI;
–Vcc < TPR(OFF): the PSW is switched OFF at the following falling edge on LGI.
When the PSW switch is OFF, the diodes build a charge pump structure so that, connecting
the TPR pin to a switching voltage (through a capacitor) it is possible to supply the low
voltage section of the chip without adding any further external component. The diodes and
the switch are designed to withstand a current of at least 200mA
7.2 3.3V reference voltage
This block is used to supply the microcontroller; this source is able to supply 10mA in save
mode and 30mA in operating
available, an additional circuit is ensures that, even sinking 3mA, the pin voltage doesn't
exceed 1.2V.
The reference is available until Vcc is above V
additional sinking circuit is enabled again.
mode; moreover, during start-up when V
REF(OFF)
) to a value in the range
CC
.
RMS
is not yet
REF
; below that it turns off and the
16/22
Page 17
L6382DBlock description
7.3 Drivers
●LSD (Low Side Driver): it consists of a level shifter from 3.3V logic signal (LSI) to Vcc
MOS driving level; conceived for the half-bridge low-side power MOS, it is able to
source and sink 120mA (min).
●HSD (Level Shifter and High Side Driver): it consists of a level shifter from 3.3V logic
signal (HGI) to the high side gate driver input up to 600V. Conceived for the half-bridge
high-side power MOS, the HSG is able to source and sink 120mA.
●PFD (Power Factor Driver): it consists of a level shifter from 3.3V logic signal (PFI) to
Vcc MOS driving level: the driver is able to source 120mA from Vcc to PFG (turn-on)
and to sink 250mA to GND (turn-off); it is suitable to drive the MOS of the PFC preregulator stage.
●HED (Heat Driver): it consists of a level shifter from 3.3V logic signal (HEI) to Vcc MOS
driving level; the driver is able to source 30mA from Vcc to HEG and to sink 75mA to
GND and it is suitable for the filament heating when they are supplied by independent
winding.
●Bootstrap Circuit: it generates the supply voltage for the high side Driver (HSD).
A patented integrated bootstrap section replaces an external bootstrap diode. This
section together with a bootstrap capacitor provides the bootstrap voltage to drive the
high side power MOSFET. This function is achieved using a high voltage DMOS driver
which is driven synchronously with the low side external power MOSFET. For a safe
operation, current flow between BOOT pin and Vcc is always inhibited, even though
ZVS operation may not be ensured.
7.4 Internal logic, over current protection (OCP) and interlocking
function
The DIM (Digital Input Monitor) block manages the input signals delivered to the drivers
ensuring that they are low during the described start-up procedure; the DIM block controls
the L6382D behaviour during both save
When the voltage on pin CSI overcomes the internal reference of 0.5V (typ.) the block
latches the fault condition: in this state the OCP block forces low both HSG and LSG signals
while CSO will be forced high. This condition remains latched until LSI and HSI are
simultaneously low and CSI is below 0.5V.
This function is suitable to implement an over current protection or hard-switching detection
by using an external sense resistor.
As the voltage on pin CSI can go negative, the current must be limited below 2mA by
external components.
Another feature of the DIM block is the internal interlocking that avoids cross-conduction in
the half-bridge FET's: if by chance both HGI and LGI input's are brought high at the same
time, then LSG and HSG are forced low as long as this critical condition persists.
and operating modes.
17/22
Page 18
Package mechanical dataL6382D
8 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
18/22
Page 19
L6382DPackage mechanical data
Table 5. SO-20 Mechanical data
Dim.
mm.inch
MinTypMaxMinTypMax
A 2.35 2.65 0.093 0.104
A1 0.10 0.30 0.004 0.012
B 0.33 0.51 0.013 0.200
C 0.23 0.32 0.009 0.013
D (1)
12.60 13.00 0.496 0.512
E 7.40 7.60 0.291 0.299
e 1.27 0.050
H 10.0 10.65 0.394 0.419
h 0.25 0.75 0.010 0.030
L 0.40 1.27 0.016 0.050
k 0° (min.), 8° (max.)
ddd 0.10 0.004
Figure 13. Package dimensions
19/22
Page 20
Order codesL6382D
9 Order codes
Table 6. Order codes
Part numberPackagePackaging
L6382DSO-20Tube
L6382DTRSO-20Tape & Reel
20/22
Page 21
L6382DRevision history
10 Revision history
Table 7. Revision history
DateRevisionChanges
15-Nov-20041First Issue
03-Jan-20052Changed from “Preliminary Data” to “Final Datasheet”
23-Oct-20053Many modified
19-Apr-20064New template
22-May-20065Typo error in block diagram, updated values in electrical
charcteristics Ta b l e 4 .
21-Mar-20076Typo on Ta b le 2
21/22
Page 22
L6382D
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