Page 1
0.038 (.97) NOM
45°
0.046 (1.16)
0.036 (0.92)
13
0.030 (0.76)
MAX
0.195 (4.96)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.500 (12.7)
MIN
Ø0.021 (0.53) 3X
0.210 (5.34)
MAX
2
0.050 (1.27)
0.100 (2.54) DIA.
0.100 (2.54)
PACKAGE DIMENSIONS
FEATURES
• Hermetically sealed package
• Wide reception angle
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The L14C1/L14C2 are silicon phototransistors mounted in a wide angle, TO-18 package.
2001 Fairchild Semiconductor Corporation
DS300305 6/01/01 1 OF 4 www.fairchildsemi.com
SCHEMATIC
HERMETIC SILICON PHOTOTRANSISTOR
L14C1 L14C2
(CONNECTED TO CASE)
COLLECTOR
3
BASE 2
1
EMITTER
Page 2
www.fairchildsemi.com 2 OF 4 6/01/01 DS300305
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
Storage Temperature T
STG
-65 to +150 °C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
Collector to Emitter Breakdown Voltage
V
CEO
50 V
Collector to Base Breakdown Voltage V
CBO
50 V
Emitter to Base Breakdwon Voltage V
EBO
7V
Power Dissipation(TA= 25°C)
(1)
P
D
300 mW
Power Dissipation(TC= 25°C)
(2)
P
D
600 mW
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Collector-Emitter Breakdown IC= 10 mA, Ee = 0 BV
CEO
50 — V
Emitter-Base Breakdown IE= 100 µA, Ee = 0 BV
EBO
7.0 — V
Collector-Base Breakdown IC= 100 µA, Ee = 0 BV
CBO
50 — V
Collector-Emitter Leakage VCE= 20 V, Ee = 0 I
CEO
— 100 nA
Reception Angle at 1/2 Sensitivity θ ±40 Degrees
On-State Collector Current L14C1 Ee = 0.5 mW/cm2, VCE= 5 V
(7,8)
I
C(ON)
.16 — mA
On-State Collector Current L14C2 Ee = 0.5 mW/cm2, VCE= 5 V
(7,8)
I
C(ON)
.08 — mA
On-State Collector Current L14C2 Ee = 1.0 mW/cm2, VCE= 5 V
(7,8)
I
C(ON)
.16 — mA
Turn-On Time IC= 2 mA, VCC= 10 V, RL=100 Ω t
on
5 µs
Turn-Off Time IC= 2 mA, VCC= 10 V, RL=100 Ω t
off
5 µs
Saturation Voltage IC= 0.40 mA, Ee = 6.0 mW/cm
2(7,8)
V
CE(SAT)
— 0.40 V
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip
1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm
2
is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm
2
.
HERMETIC SILICON PHOTOTRANSISTOR
L14C1 L14C2
Page 3
HERMETIC SILICON PHOTOTRANSISTOR
L14C1 L14C2
DS300305 6/01/01 3 OF 4 www.fairchildsemi.com
Figure 1. Light Current vs. Collector to Emitter Voltage
10
Ee = 20 mW/cm
Ee = 10 mW/cm
1.0
0.1
, NORMALIZED LIGHT CURRENT
I
I
.01
0.1
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1.0 10 100
Ee = 5 mW/cm
Ee = 2 mW/cm
NORMALIZED TO:
VCE = 5 V
Ee = 10 mW/cm
Figure 3. Dark Current vs. Temperature
1000
100
10
Figure 2. Normalized Light Current vs. Radiation
10
2
2
2
2
2
1.0
0.1
, NORMALIZED LIGHT CURRENT
L
I
.01
.01
1.0 100
- TOTAL IRRADIANCE IN mW/cm
E
e
NORMALIZED TO:
VCE = 5 V
Ee = 10 mW/cm
10
2
2
Figure 4. Switching Speed vs. Output Current
10
RL = 1KΩ
1.0
0.1
, DARK CURRENT (µA)
D
I
.01
.001
0
25 100 150125
Figure 5. Spectral Response
1.0
0.9
0.8
0.7
0.6
0.5
0.4
RELATIVE RESPONSE
0.3
0.2
0.1
0
500
600 900 11001000
VCE = 20 V
Ee = 0 mW/cm
50
T, TEMPERATURE (
700
λ, WAVE LENGTH (NANOMETERS
75
800
2
°C)
)
1.0
NORMALIZED TO:
VCE = 10 V
= 2 mA
I
C
= t
= 5 µsec
t
on
off
R
, NORMALIZED TURN ON AND TURN OFF TIMES
off
and t
on
t
= 100 Ω
L
.01
1 10 1001.0
I
, OUTPUT CURRENT (mA)
C
Figure 6. Angular Response Curve
130
120
110
100
90
80
70
60
50
40
RELATIVE OUTPUT (%)
30
20
10
-60 -40 -20 20 40 600
θ, ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
RL = 100Ω
RL = 10Ω
Page 4
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
www.fairchildsemi.com 4 OF 4 6/01/01 DS300305
HERMETIC SILICON PHOTOTRANSISTOR
L14C1 L14C2
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