Page 1
KSE5020
Feature
• High Voltage, High Quality High Speed Switching : tF=0.1µs
• WIDE SOA
KSE5020
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
IB
P
T
T
CBO
CEO
EBO
C
CP
C
J
STG
Collector-Base Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 7 V
Collector Current (DC) 3 A
Collector Current (Pulse) 6 A
Base Current (DC) 1 A
Collector Dissipation (TC=25°C) 30 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1=-IB2= 0.6A
VCEX
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1 V
CE
(sat) Base-Emitter Saturation Voltage IC = 1.5A, IB = 0.3A 1.5 V
V
BE
C
ob
f
T
t
ON
t
S
t
F
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V
Collector-Emitter Breakdown Voltage IC = 5mA, R
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
Turn ON Time V
Storage Time 3 µs
Fall Time 0.3 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
BE
L = 2mH, Clamped
= 500V, IE = 0 10 µA
CB
= 5V, IC = 0 10 µA
EB
= 5V, IC = 0.3A
CE
= 5V, IC = 1.5A
V
CE
= 10V, f = 1MHz 50 pF
CB
= 10V, IC = 0.3A 18 MHz
CE
= 200V
CC
5I
1 = -2.5IB2=IC=2A
B
RL = 100Ω
=∞ 500 V
500 V
15
50
8
0.5 µs
hFE Classification
Classification R O Y
h
FE1
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
15 ~ 30 20 ~ 40 30 ~ 50
Page 2
Typical Characteristics
KSE5020
=500mA
I
B
I
=400mA
B
=300mA
I
B
I
B
=100mA
I
B
IB=50mA
IB=20mA
IB=0
=200mA
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
0.0
012345678910
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
100
10
hFE, DC CURRENT GAIN
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat),V
BE
0.01
V
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IC=5I
B
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VBE[V], BASE-EMITTER VOLTAGE
VCE=5V
Figure 3. Collector-Emitter Saturation Voltage
Baser-Emitter Saturation Voltage
10
1
0.1
[us], FALL TIME
F
t
[us], STORAGE TIME
[us], TURN ON TIME
ON
t
STG
t
0.01
0.1 1 10
Figure 5. Turn On Time
©2001 Fairchild Semiconductor Corporation
IC[A], COLLECTOR CURRENT
VCC=200V
=5IB1=-2.5I
I
C
t
STG
t
ON
t
F
Figure 4. Base-Emitter On Voltage
B2
Rev. A1, June 2001
Page 3
Package Demensions
KSE5020
TO-126
ø3.20
0.75
1.60
0.75
2.28TYP
[2.28±0.20]
±0.10
3.90
±0.10
±0.10
±0.10
±0.10
8.00
#1
±0.30
2.28TYP
[2.28±0.20]
14.20MAX
±0.30
13.06
±0.20
11.00
(1.00)
±0.20
16.10
0.50
3.25
(0.50)
1.75
+0.10
–0.05
±0.20
±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
CEx™
A
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
®
UltraFET
VCX™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Loading...