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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSC5089
DESCRIPTION
·High Collector-Base Voltage-
: V
·High Switching Speed
APPLICATIONS
·Designed for use in high definition color display
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 1500V(Min)
CBO
horizontal deflection output application.
=25℃)
a
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
stg
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 8 A
Collector Current-Peak 15 A
B Base Current-Continuous 4 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
THERMAL CHARACTERISTICS
150 W
℃
℃
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance, Junction to Case 0.83
℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor KSC5089
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 5.0 V
Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 1.5 V
Collector Cutoff Current VCB= 800V; IE= 0 10
Emitter Cutoff Current VEB= 4V; IC=0 1 mA
DC Current Gain IC= 1A; VCE= 5V 8
DC Current Gain IC= 6A; VCE= 5V 5
Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V 3 MHz
Switching Times
t
s
tf
Storage Time 3.0
Fall Time
IC= 6A; IB1= 1.2A; IB2= -2.4A;
V
= 200V
CC
μA
μs
0.2
μs
isc Website：www.iscsemi.cn
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