Page 1
KSC5021F
High Voltage and High Reliability
• High Speed Switching : tF = 0.1µs(Typ.)
•Wide SOA
KSC5021F
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 7 V
Collector Current (DC) 5 A
Collector Current (Pulse) 10 A
Base Current 2 A
Collector Dissipation (TC=25°C) 40 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Uni ts
BV
CBO
BV
CEO
BV
EBO
V
CEX
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A 1.5 V
V
BE
C
ob
fT
t
ON
t
STG
t
F
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V
Collector-E mitte r Sust aini ng Voltag e IC = 5mA, IB = 0 500 V
Emitter-Base Breakd own Voltage IE = 1mA, IC = 0 7 V
(sus) Collec tor-E mitte r Sust ain ing Voltag e IC = 2.5A, IB1 = -IB2 = 1A
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Output Capacitance V
Current Gain Bandwidth Product V
Turn On Time V
Storage Time 3 µs
Fall Time 0.3 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
L = 1mH, Clamped
= 500V, IE = 0 10 µA
CB
= 5V, IC = 0 10 µA
EB
= 5V, IC = 0.6A
CE
V
= 5V, IC = 3A
CE
= 10V, IE = 0, f = 1MHz 80 pF
CB
= 10V, IC = 0.6A 15 MHz
CE
= 200V
CC
= 5IB1 = -2.5IB2 = 4A
I
C
= 50Ω
R
L
500 V
15
50
8
0.5 µs
hFE Classification
Classification R O Y
h
FE1
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
15 ~ 30 20 ~ 40 30 ~ 50
Page 2
Typical Characteristics
KSC5021F
5
IB = 800mA
4
IB = 1A
IB = 600mA
IB = 400mA
IB = 1.2A
3
2
[A], COLLECTOR CURRENT
C
1
I
IB = 200mA
IB = 100mA
IB = 50mA
1000
100
10
, DC CURRENT GAIN
FE
h
IB = 20mA
0
0246810
IB = 0
VCE[V], COLLECTOR-EMITTER V OLTAG E
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 5 I
B
10
1
s], TIME
µ
[
F
, t
STG
, t
0.1
ON
t
0.01
0.1 1 10
IC[A], COLLECTOR CURRENT
VCE = 5V
t
STG
t
ON
t
F
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
6
5
4
3
2
[A], COLLECTOR CURRENT
C
1
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Figure 4. Switching Time
100
VCE = 5V
ICP(max)
10
IC(max)
1
0.1
[A], COLLECTO R CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-E MI T TE R VOLT A GE
1ms
10ms
DC
50µs
500
µ
s
Rev. B1, December 2002
Page 3
KSC5021F
Typical Characteristics
100
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
10 100 1000 10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
(Continued)
IB2 = -1A
H
µ
L = 200
60
50
40
30
20
[W], POWER DIS S IPA TIO N
C
P
10
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
Page 4
Package Dimensions
±0.10
3.30
±0.20
15.80
10.16
(7.00)
TO-220F
±0.20
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54
(0.70)
KSC5021F
±0.20
±0.20
15.87
±0.30
9.75
MAX1.47
0.80
±0.10
0.35
±0.10
2.54TYP
±0.20
[2.54
(30°)
#1
0.50
+0.10
–0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
Page 5
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I
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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