Page 1
Power Amplifier Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Built-in Damper Diode at E-C
• Darlington TR
• Complement to KSD1222
KSB907
KSB907
1
I-PACK
1. Base 2. Collector 3. Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
IB
P
PC
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage - 60 V
Collector-Emitter Voltage - 40 V
Emitter-Base Voltage - 5 V
Collector Current(DC) - 3 A
Base Current - 0.3 A
Collector Dissipation (Ta=25°C) 15 W
Collector Dissipation (TC=25°C) 1 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
V
BE
tON
tSTG
tF
CEO
Collector- Emitter Breakdown Voltage IC = - 25mA, IB = 0 - 40 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 4mA - 1.5 V
(sat) Base-Emitter Saturation Voltage IC = - 2A, IB = - 4mA - 2 V
Turn ON Time V
Storage Time 0.6 µs
Fall Time 0.25 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 20 µA
CB
= - 5V, IC = 0 - 2.5 µA
EB
= - 2V, IC = - 1A
CE
V
= - 2V, IC = - 3A
CE
= - 30V , IC = - 3A
CC
= - IB2 = - 6mA
I
B1
= 10Ω
R
L
2000
1000
0.3 µs
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 2
Typical Characteristics
KSB907
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
(A), COLLECTOR CURRENT
C
I
-0.5
-0.0
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0
VCE(V), COLLECTOR EMITTER VOLTAGE
=-300uA
I
B
=-275uA
I
B
IB=-250uA
IB=-225uA
IB=-200uA
IB=-175uA
IB=0
10000
1000
, DC CURRENT GAIN
FE
h
100
-0.1 -1 -10
IC(A), COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
V
BE(SAT)
V
CE(SAT)
(V), SATURATION VOLTAGE
CE(SAT)
, V
BE(SAT)
-0.1
V
-0.1 -1 -10
IC(A), COLLECTOR CURRENT
IC=500I
B
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
(A), COLLECTOR CURRENT
C
I
-0.5
-0.0
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2
VBE(V), BASE EMITTER VOLTAGE
VCE=-2V
VCE=-2V
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
IC MAX (PULSE)
IC MAX. (DC)
-1
-0.1
(A), COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
VCE(V), COLLECTOR EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
10ms
DC
1ms
Figure 4. Base-Emitter On Voltage
20
18
16
14
12
10
8
6
4
(W), POWER DISSIPATION
D
P
2
0
0 255075100125150175
TC(℃) CASE TEMPERATURE
Rev. A, February 2000
Page 3
Package Demensions
6.60
5.34
(0.50) (0.50)(4.34)
±0.20
±0.20
I-PAK
2.30
0.50
KSB907
±0.20
±0.10
±0.20
0.60
±0.10
0.80
MAX0.96
0.76
±0.10
2.30TYP
[2.30±0.20]
±0.20
0.70
±0.20
1.80
2.30TYP
[2.30±0.20]
±0.20
6.10
±0.30
9.30
0.50
±0.30
16.10
±0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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