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KSB744/744A
Audio Frequency Power Amplifier
• Complement to KSD794/KSD794A
KSB744/744A
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
VEBO
IC
I
CP
IB
PC
P
C
Collector-Base Voltage -70 V
Collector-Emitter Voltage : KSB744
Emitter-Base Voltage -5 V
Collector Current (DC) -3 A
*Collector Current (Pulse) -5 A
Base Current -0.6 A
Collector Dissipation (Ta=25°C) 1 W
Collector Dissipation (TC=25°C) 10 W
TJ Junction Temperature 150 °C
T
STG
* PW≤10ms, Duty Cycle≤50%
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. T yp. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
(sat) * Collector-Emitter Saturation Voltage IC = -1.5A, IC = -0.15A -0.5 -2 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC = -1.5A, IB = -0.15A -0.8 -2 V
V
BE
f
T
C
ob
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
: KSB744A
TC=25°C unless otherwise noted
= -45V, IE = 0 -1 µA
CB
= -3V, IC = 0 -1 µA
EB
= -5V, IC = -20mA
CE
V
= -5V, IC = -0.5A
CE
= -5V, IC = -0.1A 45 MHz
CE
= -10V, IE = 0
CB
f = 1MHz
-45
-60
30
120
60
100 320
60 pF
V
V
hFE Cassification
Classification R O Y
h
FE2
©2000 Fairchild Semiconductor International Rev. A, February 2000
60 ~ 120 100 ~ 200 160 ~ 320
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Typical Characteristics
KSB744/744A
-1.6
IB = -20mA
-1.2
-0.8
IB = -18mA
IB = -16mA
IB = -14mA
IB = -12mA
IB = -10mA
IB = -8mA
IB = -6mA
-0.4
Ic[A], COLLECTOR CURRENT
0 -10 -20 -30 -40
IB = -4mA
IB = -2mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
VBE(sat)
-0.1
(sat)[V] SATURATION VOLTAGE
BE
VCE(sat)
(sat)[V],V
CE
V
-0.01
-0.001 -0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
IC = 10·I
-1000
-100
-10
, DC CURRENT GAIN
FE
h
-1
-0.001 -0.01 -0.1 -1 -10
VCE = -5V
IC[A], COLLECTOR CURRENT
B
1000
100
10
IE = 0
f=1.0MHz
Cob[pF], CAPACITANCE
1
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
1
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
-0.01 -0.1 -1
f
IC[A], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Figure 4. Collector Output Capacitance
DC
Dissipation
10ms
KSB744 V
KSB744A V
1ms
s/b Limited
100us
MAX
CEO
MAX
CEO
Rev. A, February 2000
VCE=5V
-10
Ic MAX(Pulse)
Ic MAX(DC)
-1
Limited
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
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KSB744/744A
Typical Characteristics
s/b Limited
Dissipation Limited
dT[%], Ic DERATING
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
(Continued)
16
14
12
10
8
6
4
[W], POWER DISSIPATION
C
P
2
0
25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Areas Figure 8. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Package Demensions
KSB744/744A
TO-126
ø3.20
0.75
1.60
0.75
2.28TYP
[2.28±0.20]
±0.10
3.90
±0.10
±0.10
±0.10
±0.10
8.00
#1
±0.30
2.28TYP
[2.28±0.20]
14.20MAX
±0.30
13.06
±0.20
11.00
(1.00)
±0.20
16.10
0.50
3.25
(0.50)
1.75
+0.10
–0.05
±0.20
±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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