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KSB707/708
Low Frequency Power Amplifier
• Low Speed Switching
• Industrial Use
• Complement to KSD568/569
KSB707/708
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
* PW≤300µs, Duty Cycle≤10%
Collector-Base Voltage - 80 V
Collector-Emitter Voltage : B707
Emitter-Base Voltage - 7.0 V
Collector Current (DC) - 7.0 A
*Collector Current (Pulse) - 15 A
Base Current (DC) - 3.5 A
Collector Dissipation (TC=25°C) 40 W
Collector Dissipation (Ta=25°C) 1.5 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat) * Collector-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 0.5 V
CE
(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 1.5 V
V
BE
* Pulse Test: PW≤350µs, Duty Cycle≤2%
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain
TC=25°C unless otherwise noted
: B708
TC=25°C unless otherwise noted
= - 60V , IE = 0 - 10 µA
CB
= - 5V, IC = 0 - 10 µA
EB
V
= - 1V, IC = - 3A
CE
= - 1V, IC = - 5A
V
CE
- 60
- 80
40
20
200
V
V
hFE Cassification
Classification R O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 60 ~ 120 100 ~ 200
Page 2
Typical Characteristics
KSB707/708
-1.0
-0.8
IB = -20mA
IB = -18mA
IB = -16mA
IB = -14mA
-0.6
IB = -12mA
IB = -10mA
-0.4
IB = -8mA
IB = -6mA
[A], COLLECTOR CURRENT
-0.2
C
I
0 -10 -20 -30 -40 -50
IB = -4mA
IB = -2mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V] SATURATION VOLTAGE
BE
(sat)[V],V
CE
V
-0.01
-0.001 -0.01 -0.1 -1 -10
VCE(sat)
IC[A], COLLECTOR CURRENT
VBE(sat)
IC = 10·I
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.001 -0.01 -0.1 -1 -10
VCE = -1V
IC[A], COLLECTOR CURRENT
B
-10
-1
Dissipation
Limited
100ms
10ms
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
300us
1ms
s/b Limited
100us
50us
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
Collector-Emitter Saturation Voltage
dT[%], Ic DERATING
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175 200
s/b Limited
Dissipation Limited
TC[oC], CASE TEMPERATURE
50
40
30
20
10
[W], POWER DISSIPATION
C
P
0
25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Page 3
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
KSB707/708
±0.20
13.08
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
©2000 Fairchild Semiconductor International
Dimensions in Millimeters
Rev. A, February 2000
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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