Page 1
KSB1149
Low Collector Saturation Voltage
Built-in Damper Diode at E-C
• High DC Current Gain
• High Power Dissipation : P
PNP Silicon Darlington Transistor
=1.3W (Ta=25°C)
C
1
TO-126
1. Emitter 2.Collector 3.Base
KSB1149
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
Collector-Base Voltage - 100 V
Collector-Emitter Voltage - 100 V
Emitter-Base Voltage - 8 V
Collector Current (DC) - 3 A
*Collector Current (Pulse) - 5 A
Collector Dissipation (Ta=25°C) 1.3 W
Collector Dissipation (TC=25°C) 15 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
V
BE
t
ON
t
STG
t
F
* Pulse test: PW≤350µs, duty Cycle≤2% Pulsed
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
= - 100V, IE = 0 - 10 µA
CB
= - 5V, IC = 0 - 2 mA
EB
= - 2V, IC = - 1.5A
CE
V
= - 2V, IC = - 3A
CE
2000
1000
20000
(sat) * Collector-Emitter Saturation Voltage IC = - 1.5A, IB = - 1.5mA - 0.9 - 1.2 V
(sat) * Base-Emitter Sat uration Voltage IC = - 1.5A, IB = - 1.5mA - 1.5 - 2 V
Turn ON Time V
Storage Time 2 µs
Fall Time 1 µs
= - 40V, IC = - 1.5A
CC
= - IB2 = - 1.5mA
I
B1
= 27Ω
R
L
0.5 µs
hFE Classification
Classification O Y G
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
2000 ~ 5000 4000 ~ 12000 6000 ~ 20000
Page 2
Typical Characteristics
KSB1149
-5
=-1mA
B
-4
IB=-900uA
IB=-800uA
IB=-700uA
IB=-600uA
-3
-2
-1
Ic[A], COLLECTOR CURRENT
-0
-0 -1 -2 -3 -4 -5
I
IB=-200uA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-100
-10
-1
(sat)[V], SATURATION VOLTA GE
CE
(sat), V
BE
V
-0.1
IC[A], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
-0.1 -1 -10
IB=-500uA
IB=-400uA
IB=-300uA
IB=-100uA
Ic = 1000 I
Pulsed
100000
VCE = -2V
Pulsed
10000
1000
, DC CURRENT GAIN
FE
h
100
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
200ms
10ms
1ms
s/b Limited
300us
100us
B
-10
Ic(Pulse)
Ic(DC)
Dissipation Limited
-1
-0.1
[A], COLLECTOR CURRENT
C
I
Tc=25oC
Single Pulse
-0.01
-1 -10 -100 500
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
Base-Emitter Saturation Voltage
[%], Ic DERATING
T
d
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175 200
s/b LIMITED
DISSIPATION LIMITED
TC[oC], CASE TEMPERATURE
20
15
10
5
[W], POWER DISSIPATION
C
P
0
0 25 50 7 5 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Page 3
Package Demensions
KSB1149
TO-126
ø3.20
0.75
1.60
0.75
2.28TYP
[2.28±0.20]
±0.10
3.90
±0.10
±0.10
±0.10
±0.10
8.00
#1
±0.30
2.28TYP
[2.28±0.20]
14.20MAX
±0.30
13.06
±0.20
11.00
(1.00)
±0.20
16.10
0.50
3.25
(0.50)
1.75
+0.10
–0.05
±0.20
±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production Th is datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Loading...