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Low Frequency Power Amplifier
• Low Speed Switchng Industrial Use
• Complement to KSD1588
KSB1097
KSB1097
1
TO-220F
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
* PW≤300µs, Duty Cycle≤10%
Collector-Base Voltage - 80 V
Collector-Emitter Voltage - 60 V
Emitter-Base Voltage - 7 V
Collector Current (DC) - 7 A
*Collector Current (Pulse) - 15 A
Base Current - 3.5 A
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 0.5 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 1.5 V
V
BE
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 10 µA
CB
= - 5V, IC = 0 - 10 µA
EB
= - 1V, IC = - 3A
CE
V
= - 1V, IC = - 5A
CE
40
20
200
hFE Classification
Classification R O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 60 ~ 120 100 ~ 200
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Typical Characteristics
KSB1097
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
[A], COLLECTOR CURRENT
C
I
-0.1
-0.0
-0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50
IB = -20mA
IB = -18mA
IB = -16mA
IB = -14mA
IB = -12mA
IB = -10mA
IB = -8mA
IB = -6mA
VCE [V], COLLECTOR-EMITTER VOLTAG E
IB = -4mA
IB = -2mA
1000
100
10
, DC CURRENT GAIN
FE
h
1
-1E-3 -0.01 -0.1 -1 -10
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristics Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
-1
-0.1
(sat) [V], SATURATION VOLTAGE
CE
(sat), V
-0.01
BE
-1E-3 -0.01 -0.1 -1 -10
V
VBE(sat)
VCE(sat)
IC [A], COLLECTOR CURRENT
IC=10I
B
40
35
30
25
20
15
10
[W], POWER DISSIPATION
D
P
5
0
0 25 50 75 100 125 150 175 200
Tc [oC], CASE TEMPERATURE
VCE = -1V
Figure 3. Saturation Voltage Figure 4. Power Derating
160
140
120
100
80
60
40
dT [%], Ic DERATING
20
DISSIPATION LIMITED
0
0 25 50 75 100 125 150 175 200
Tc [OC], CASE TEMPERATURE
Figure 5. Power Derating Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
s/b LIMITED
100mS
50uS
100uS
300uS
1mS
10mS
-100
-10
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100 -1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Rev. A, February 2000
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Package Demensions
±0.10
3.30
±0.20
15.80
10.16
(7.00)
TO-220F
±0.20
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54
(0.70)
KSB1097
±0.20
±0.20
15.87
±0.30
9.75
MAX1.47
0.80
±0.10
0.35
±0.10
2.54TYP
±0.20
[2.54
(30°)
#1
0.50
+0.10
–0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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