Page 1
Power Amplifier Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Complement to KSD1413
KSB1023
KSB1023
1
TO-220F
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
I
P
P
CBO
CEO
EBO
C
CP
B
C
C
Collector-Base Voltage - 60 V
Collector-Emitter Voltage - 40 V
Emitter-Base Voltage - 5 V
Collector Current (DC) - 3 A
Collector Current (Pulse) - 6 A
Base Current - 0.3 A
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 20 W
TJ Junction Temperature 150 °C
T
STG
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
Collector-Emitter Breakdown Voltage IC = - 25mA, IB = 0 - 40 V
CEO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 4mA - 1.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = - 2A, IB = - 4mA - 2 V
V
BE
t
ON
t
STG
t
F
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Turn ON Time V
Storage Time 0.6 µs
Fall Time 0.25 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 20 µA
CB
= - 5V, IC = 0 - 2.5 mA
EB
= - 2V, IC = - 1A
CE
V
= - 2V, IC = - 3A
CE
= - 30V, IC = - 3A
CC
= - IB2 = - 6mA
I
B1
= 10Ω
R
L
2000
1000
0.3 µs
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 2
Typical Characteristics
KSB1023
-5
-4
-3
-2
[A], COLLECTOR CURRENT
-1
C
I
-0
-0 -1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
= -300uA
I
B
= -275uA
I
B
= -250uA
I
B
= -225uA
I
B
IB = -200uA
IB = -175uA
IB = 0
10k
1k
, DC CURRENT GAIN
FE
h
100
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
VBE(sat)
-1
VCE(sat)
IC = 500 I
B
-4
-3
-2
VCE = -2V
VCE = -2V
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.1
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturating Voltage
100mS
1mS
10ms
MAX
CEO
V
10
IC,max(pulse)
IC,max(DC)
1
[A], COLLECTOR CURRENT
C
I
0.1
110100
VCE[V], COLLECTOR-EMITTE R VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
-1
[A], COLLECTOR CURRENT
C
I
-0
-0.0 -0.8 -1.6 -2.4 -3.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
32
28
24
20
16
12
8
[W], POWER DISSIPATION
C
P
4
0
050100150
TC[oC], CASE TEMPERATURE
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Page 3
Package Demensions
±0.10
3.30
±0.20
15.80
10.16
(7.00)
TO-220F
±0.20
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54
(0.70)
KSB1023
±0.20
±0.20
15.87
±0.30
9.75
MAX1.47
0.80
0.35
2.54TYP
±0.20
[2.54
±0.10
±0.10
(30°)
#1
0.50
+0.10
–0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 4
TRADEMARKS
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not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
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2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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