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KSB1022
High Power Switching Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Complement to KSD1417
KSB1022
1
TO-220F
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transisto
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
I
P
P
T
T
CBO
CEO
EBO
C
CP
B
C
C
J
STG
Collector-Base Voltage - 60 V
Collector-Emitter Voltage - 60 V
Emitter-Base Voltage - 5 V
Collector Current (DC) - 7 A
Collector Current (Pulse) - 10 A
Base Current - 0.7 A
Collector Dissipation (Ta=25°C) 2 W
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 60 V
CEO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 3A, IB = - 6mA
V
CE
(sat) Base-Emitter Saturation Voltage IC = - 3A, IB = - 6mA - 1.55 - 2.5 V
V
BE
t
ON
t
STG
t
F
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Turn ON Time V
Storage Time 2 µs
Fall Time 2.5 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 60V, IE = 0 - 100 µA
CB
= - 5V, IC = 0 - 4 mA
EB
= - 3V, IC = - 3A
CE
V
= - 3V, IC = - 7A
CE
= - 7A, IB = - 14mA
I
C
= - 45V, IC = - 3A
CC
= - IB2 = - 6mA
I
B1
R
= 15Ω
L
2000
15000
1000
- 0.95
- 1.3
- 1.5
- 2
0.8 µs
V
V
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 2
Typical Characteristics
KSB1022
IB = -2mA
IB = -1.5mA
-10
-8
-6
-4
[A], COLLECTOR CURRENT
-2
C
I
-0
-0 -2 -4 -6 -8 -10
IB = -2.5mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.1
-0.1 -1 -10
IC[A], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB = -1mA
IB = -0.5mA
IB = 0
Ic = 500 I
100k
10k
VCE = -3V
1k
, DC CURRENT GAIN
FE
h
100
-0.1 -1 -10 -100
IC[A], COLLECTOR CURRENT
B
-10
-9
-8
-7
-6
-5
-4
-3
-2
[A], COLLECTOR CURRENT
C
I
-1
-0
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2
VCE = -3V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-100
ICmax(pulse)
-10
ICmax(DC)
-1
-0.1
[A], COLLECTOR CURRENT
C
I
-0.01
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2000 Fairchild Semiconductor International
DC
100mS
10ms
1mS
100uS
Figure 4. Base-Emitter On Voltage
40
35
30
25
MAX
CEO
V
20
15
10
[W], POWER DISSIPATION
C
P
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Rev. A, February 2000
Page 3
Package Demensions
±0.10
3.30
±0.20
15.80
10.16
(7.00)
TO-220F
±0.20
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54
(0.70)
KSB1022
±0.20
±0.20
15.87
±0.30
9.75
MAX1.47
0.80
0.35
2.54TYP
±0.20
[2.54
±0.10
±0.10
(30°)
#1
0.50
+0.10
–0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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