Page 1
KSA931
Low Frequency Amplifier & Medium Speed
Switching
• Complement to KSC2331
• Collector-Base Voltage : V
• Collector Power Dissipation : P
CBO
= -80V
=1W
C
KSA931
1
1. Emitter 2. Collector 3. Base
TO-92L
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -80 V
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -8 V
Collector Current -700 mA
Collector Power Dissipation 1 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.3 -0.7 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.9 -1.2 V
V
BE
f
T
C
ob
* Pulse Test: PW≤350µs, Duty cycle≤2%
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -80 V
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -60 V
Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -8 V
Collector Cut-off Current VCB= -60V, IE=0 -0.1 µA
Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA
* DC Current Gain VCE= -2V, IC= -50mA 40 240
Current Gain Bandwidth Productor VCE= -10V, IC= -50mA 100 MHz
Output Capacitance VCB= -10V, IE=0, f=1MHz 13 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
h
Classification
FE
Classification R O Y
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
40 ~ 80 70 ~ 140 120 ~ 240
Page 2
Typical Characteristics
KSA931
IB = -1.8µA
IB = -1.4µA
IB = -1.2µA
IB = -1.0µA
IB = -0.8µA
-500
-450
-400
-350
-300
-250
-200
-150
-100
[mA], COLLECTOR CURRENT
C
I
-50
0
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IB = -0.6µA
IB = -0.4µA
IB = -0.2µA
IC = 10 I
1000
VCE = -2V
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
-1000
B
-100
-10
[mA], COLLECTOR CURRENT
C
I
-1
0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VCE = -2V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10000
-1000
-100
[mA], COLLECTOR CURRENT
C
I
1. Ta = 25oC
2. * Single Pulse
-10
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
DC Operation
*200ms
Figure 4. Base-Emitter On Voltage
1.4
1.2
1.0
0.8
0.6
0.4
[W], POWER DISSIPATION
C
P
0.2
0.0
0 25 50 75 100 125 150 175
Ta[oC], AMBIENT TEMPERATURE
Rev. A2, September 2002
Page 3
Package Dimensions
±0.20
8.00
±0.20
±0.10
1.70
±0.40
1.00
4.90
±0.20
TO-92L
0.70MAX.
0.80
±0.10
1.00MAX.
KSA931
13.50
0.50
±0.20
3.90
±0.10
±0.20
1.45
3.90
±0.20
1.27TYP
[1.27
2.54 TYP
±0.10
0.45
±0.20
]
±0.10
0.45
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
2
CMOS™
E
EnSigna™
FACT™
FACT Quiet series™
®
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
2
C™
I
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Loading...