Datasheet kmz52 DATASHEETS (Philips)

Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D396
KMZ52
Magnetic Field Sensor
Product specification 2000 Jun 09
Page 2
Philips Semiconductors Product specification

FEATURES

• High sensitivity
• Integrated compensation coil
• Integrated set/reset coil.

APPLICATIONS

• Navigation
• Current and earth magnetic field measurement
• Traffic detection.

DESCRIPTION

The KMZ52 is an extremely sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. The sensor contains two magnetoresistive Wheatstone bridges physicallyoffset from one another by 90° and integrated compensation and set/reset coils. The integrated compensation coils allow magnetic field measurement with current feedback loops to generate outputs that are independent of drift in sensitivity. The orientationofsensitivitymaybesetorchanged(flipped)by means of the integrated set/reset coils. A short current pulse should be applied to the compensation coils to recover(set)thesensorafterexposuretostrongdisturbing magnetic fields. A negative current pulse will reset the sensor to reversed sensitivity. By use of periodically alternated flipping pulses and a lock-in amplifier, the output is made independent of sensor and amplifier offset.

PINNING

SYMBOL PIN DESCRIPTION
+I V
flip2
CC2
1 flip coil
2 bridge supply voltage GND2 3 ground +I
comp2
4 compensation coil GND1 5 ground +I
comp1
−I
comp1
−V
O1
+V
O1
−I
flip1
+I
flip1
V
CC1
−I
comp2
−V
O2
+V
O2
−I
flip2
16
handbook, halfpage
6 compensation coil
7 compensation coil
8 bridge output voltage
9 bridge output voltage
10 flip coil 11 flip coil 12 bridge supply voltage 13 compensation coil 14 bridge output voltage 15 bridge output voltage 16 flip coil
9
2000 Jun 09 2
pin 1 index
1
Fig.1 Simplified outline SOT109-1.
8
MBL201
Page 3
Philips Semiconductors Product specification

QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
CC
S sensitivity (uncompensated) 12 16 −
V
offset
R
bridge
R
comp
A
comp
R
flip
I
flip
t
flip
Notes
1. The compensation coil generates a field H become zero if H
2. Average power consumption of the flipping coil, defined by current, pulse duration and pulse repetition rate may not exceed the specified limit, see Chapter “Limiting values”.
bridge supply voltage − 58V
mV/V
-------------­kA/m
offset voltage per supply voltage −1.5 0 +1.5 mV/V bridge resistance 123kΩ compensation coil resistance 100 170 300 Ω field factor of compensation coil; note 1 19 22 25
A/m
---------­mA
resistance of set/reset coil 1 2 3 Ω recommended flipping current for stable operation; note 2 ±800 ±1000 ±1200 mA flip pulse duration; note 2 1 3 100 µs
× I
ext=Hcomp
comp=Acomp
in addition to the external field H
comp
.
. Sensor output will
ext

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
CC
P
tot
T
stg
T
amb
I
comp
I
flip (max)
P
flip (max)
V
isol
bridge supply voltage − 8V total power dissipation − 130 mW storage temperature −65 +150 °C maximum operating temperature −40 −125 °C maximum compensation current − 15 mA maximum flipping current − 1500 mA maximum flipping power dissipation − 50 mW voltage between isolated systems:
− 60 V flip coil and Wheatstone bridge; compensation coil and Wheatsone bridge; flip coil and compensation coil

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT
R
th j-a
terminal resistance from junction to ambient 105 K/W
2000 Jun 09 3
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Philips Semiconductors Product specification

CHARACTERISTICS

T
=25°C; V
bridge
CC1=VCC2
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CC
bridge supply voltage note 1 − 58V
H field strength operating range in sensor
plane
S sensitivity open circuit 12 16 −
TCS temperature coefficient of sensitivity T k
SX
TCV
R
bridge
TCR
O
bridge
sensitivity synchronism note 2 92 100 108 % temperature coefficient of output voltage VCC=5V;
bridge resistance note 3 123kΩ temperature coefficient of bridge
resistance
V
offset
TCV
offset
offset voltage per supply voltage −1.5 0 +1.5 mV/V temperature coefficient of offset voltage T
FH hysteresis of output voltage −−2 %FS R
comp
A
comp
R
flip
TCR
flip
resistance of compensation coil note 6 100 170 300 Ω field factor of compensation coil 19 22 25
resistance of set/reset coil note 7 1 2 3 Ω temperature coefficient of resistance of
set/reset coil
I
flip
recommended flipping current for stable operation
t
flip
R
isol
V
isol
R
isol_dice
flip pulse duration 1 3 100 µs isolating resistance note 8 1 −−MΩ voltage between isolated systems note 8 −−50 V isolating resistance between dice die 1 to die 2 1 −−MΩ
f operating frequency 0 − 1 MHz
α angle die-to-die note 9 88 90 92 deg β angle dice-to-package note 9 −5 0 +5 deg
= 5 V; unless otherwise specified.
= −25 to +125 °C − 0.31 − %/K
s
T
bridge
T
bridge
note 4
bridge
note 5
T
flip
−0.2 − +0.2 kA/m
mV/V
-------------­kA/m
−−0.4 − %/K
= −25 to +125 °C
= −25 to +125 °C;
= −25 to +125 °C;
− 0.3 − %/K
−30 +3
µ V/V
-------------
K
A/m
---------­mA
= −25 to +125 °C − 0.39 − %/K
±800 ±1000 ±1200 mA
Notes
1. Due to the ratiometric output, the same supply voltage (V
2.
k
SX
100
A
-----------------------------­A
×
comp1S1
×
comp2S2
%×=
) must be applied to both dice in one KMZ52 device.
CC
3. Bridge resistance die 1: between pins 5 and 12; bridge resistance die 2: between pins 2 and 3. R
4. .
TCR
bridge
bridge T2()Rbridge T1()
100=
-------------------------------------------------------------- -
R
bridge T1()T2T1
–
–()
Where T
25°CT2125°C=;–=
1
2000 Jun 09 4
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Philips Semiconductors Product specification
V
TCV
5. .
offset
offset T2()Voffset T1()
=
---------------------------------------------------------
– –()
T
2T1
Where T
25°CT2125°C=;–=
1
6. Resistance of compensation coil die 1: between pins 6 and 7;
resistance of compensation coil die 2: between pins 4 to 13.
7. Resistance of set/reset coil die 1: between pins 10 and 11;
resistance of set/reset coil die 2: between pins 1 to 16.
8. Isolating resistance die 1: pins 7 and 8, 7 and 10 and 8 to 10;
isolating resistance die 2: pins 1 to 2, 1 to 4 and 2 to 4.
9. Angle die-to-die: die 2 is turned by 90 ±2 degrees in anticlockwise direction with respect to die 1;
angle dice-to-package: both dice in their fixed die-to-die position are tilted towards the package edges by 0 ±5 degrees.
2000 Jun 09 5
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Philips Semiconductors Product specification

APPLICATION INFORMATION

If the angle α between external magnetic field H and the long axis of the package is zero, H is parallel to the most sensitive direction of die 2 and perpendicular to the sensitive direction of die 1. A magnetic field turning clockwise (see Fig.2) thus yields an output proportional to cos α (V
) and an output proportional to
out2
sin α (V
out1
).
handbook, halfpage
16
Die 2 Die 1
9
y
x
handbook, full pagewidth
1
y
H
8
MBL202
α
x
Fig.2 Angular relationship of dice.
−I
flip2
Z
+V
16
1
−V
O2
15 14 13 12 11 10 9
bridge
2
O2
−I
comp2VCC1
Z
2
bridge
1
+I
flip1
−I
flip1
Z
4
+V
O1
12345678
+I
flip2
CC2
GND2 −V
+I
comp2
Fig.3 Simplified circuit diagram.
2000 Jun 09 6
Z
3
MBL203
GND1V
+I
comp1−Icomp1
O1
Page 7
Philips Semiconductors Product specification

PACKAGE OUTLINE

SO16: plastic small outline package; 16 leads; body width 3.9 mm

SOT109-1

Z
16
pin 1 index
1
D
c
y
9
A
2
A
1
8
e
w M
b
p
E
H
E
detail X
A
X
v M
A
Q
(A )
L
p
L
A
3
θ
0 2.5 5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
mm
OUTLINE VERSION
SOT109-1
A
max.
1.75
0.069
A1A2A
0.25
1.45
0.10
1.25
0.010
0.057
0.004
0.049
IEC JEDEC EIAJ
076E07 MS-012
0.25
0.01
b
3
p
0.49
0.25
0.36
0.19
0.0100
0.019
0.0075
0.014
UNIT
inches
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
(1)E(1) (1)
cD
10.0
4.0
9.8
3.8
0.39
0.16
0.15
0.050
0.38
REFERENCES
2000 Jun 09 7
eHELLpQZywv θ
1.27
6.2
5.8
0.244
0.228
1.05
0.041
1.0
0.4
0.039
0.016
0.7
0.25
0.6
0.028
0.01 0.004
0.020
EUROPEAN
PROJECTION
0.25 0.1
0.01
0.7
0.3
0.028
0.012
ISSUE DATE
97-05-22 99-12-27
o
8
o
0
Page 8
Philips Semiconductors Product specification

DATA SHEET STATUS

DATA SHEET STATUS
Objective specification Development This data sheet contains the design target or goal specifications for
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
Product specification Production This data sheet contains final specifications. Philips Semiconductors
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS Short-form specification The data in a short-form
specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device attheseorat any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentationorwarrantythat such applications will be suitable for the specified use without further testing or modification.
PRODUCT
STATUS

DEFINITIONS

product development. Specification may change in any manner without notice.
published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
DISCLAIMERS Life support applications These products are not
designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury.Philips Semiconductorscustomersusingorselling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for theuseofanyoftheseproducts,conveysnolicenceortitle under any patent, copyright, or mask work right to these products,andmakes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
(1)
2000 Jun 09 8
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Philips Semiconductors Product specification
NOTES
2000 Jun 09 9
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Philips Semiconductors Product specification
NOTES
2000 Jun 09 10
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Philips Semiconductors Product specification
NOTES
2000 Jun 09 11
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2000
Internet: http://www.semiconductors.philips.com
69
Printed in The Netherlands 613520/01/pp12 Date of release: 2000 Jun 09 Document order number: 9397 750 07049
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