
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
CHARACTERISTICS
=25°C; Hx= 0.5 kA/m; notes 1 and 2; VCC= 5 V unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
H
y
S sensitivity notes 2 and 3 13 − 19
TCV
O
R
bridge
TCR
bridge
V
offset
TCV
offset
FL linearity deviation of output
FH hysteresis of output voltage −−0.5 %⋅FS
f operating frequency 0 − 1 MHz
thermal resistance from junction to ambient 180 K/W
magnetic field strength note 2 −0.5 −+0.5 kA/m
mV V⁄
----------------kA m⁄
temperature coefficient of
output voltage
VCC=5V;
T
= −25 to +125 °C
amb
I
= 3 mA;
CC
T
= −25 to +125 °C
amb
−−0.4 − %/K
−−0.15 − %/K
bridge resistance 0.8 − 1.6 kΩ
temperature coefficient of
T
= −25 to +125 °C − 0.25 − %/K
bridge
bridge resistance
offset voltage −1.5 − +1.5 mV/V
offset voltage drift T
voltage
= −25 to +125 °C −6 −+6
bridge
H
=0to±0.25 kA/m −−0.8 %⋅FS
y
H
=0to±0.4 kA/m −−2.5 %⋅FS
y
=0to±0.5 kA/m −−4.0 %⋅FS
H
y
µ VV⁄
---------------
K
Notes
1. Before first operation or after operation outside the SOAR (Fig.4) the sensor has to be reset by application of an
auxiliary field H
2. No disturbing field (H
= 3 kA/m.
x
) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for
d
decrease of sensitivity.
at Hy0.4 kA m⁄=()V
V
O
=
3. .
S
----------------------------------------------------------------------------------------------------------------
0.4 V
×
CC
at Hy0=()–
O
1998 Mar 24 4

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Printed in The Netherlands 115106/00/03/pp8 Date of release: 1998Mar 24 Document order number: 9397 750 03584