Datasheet KA5H0365R, KA5H0380R, KA5M0380R, KA5M0365R, KA5L0380R Datasheet (Fairchild Semiconductor)

www.fairchildsemi.com

KA5x03xx-SERIES

KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365 RN,
KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)

Features

• Precision Fixed Operating Frequency (100/67/50kHz)

• Low Start-up Current(Typ. 100uA)

• Pulse by Pulse Current Limiting

• Over Current Protection

• Over Voltage Protection (Min. 25V)

• Internal Thermal Shutdown Function

• Under Voltage Lockout

• Internal High Voltage Sense FET

• Auto-Restart Mode

Applications

• SMPS for VCR, SVR, STB, DVD & DVCD

• SMPS for Printer, Facsimile & Scanner

• Adaptor for C amcorder

Description

The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown pro tect ion, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchil d Power S witch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter

TO-220F-4L

1

1. GND 2. Drain 3. V

CC

4. FB

8-DIP

1.6.7.8 Drain

2. GND

3. V

CC

4. FB 5. NC

Internal Block Diagram

#3 V

CC

32V

(*#3 VCC)

µ

5

A

#4 FB

(*#4 FB)

7.5V

27V

*Asterisk - KA5M0365RN, KA5L0365RN

©2002 Fairchild Semiconductor Corporation

9V

1mA

2.5R
1R

+

−

+

−

Thermal S/D

OVER VOLTAGE S/D

−

+

5V

Vref

OSC

L.E.B

0.1V

Good

logic

S
R

Internal

bias

Q

S
R

Power on reset

#2 DRAIN

SFET

(*#1.6.7.8 DRAIN)

Q

#1 GND

(*#2 GND)

Rev.1.0.5

KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Characteristic Symbol Value Unit
KA5H0365R, KA5M0365R, KA5L0365R

Maximum Drain Voltage V
Drain-Gate Voltage (R

=1MΩ)V

GS

D,MAX

Gate-Source (GND) Voltage V
Drain Current Pulsed

(1)

I
Continuous Drain Current (TC=25°C) I
Continuous Drain Current (TC=100°C) I
Single Pulsed Avalanche Energy
Maximum Supply Voltage V

(2)

E

CC,MAX

Analog Input Voltage Range V
Total Power Dissipation

Derating 0.6 W/°C
Operating Junction Temperature. T
Operating Ambient Temperature. T
Storage Temperature Range. T

KA5H0380R, KA5M0380R, KA5L0380R

Maximum Drain Voltage V
Drain-Gate Voltage (R

=1MΩ)V

GS

D,MAX

Gate-Source (GND) Voltage V
Drain Current Pulsed

(1)

I
Continuous Drain Current (TC=25°C) I
Continuous Drain Current (TC=100°C) I
Single Pulsed Avalanche Energy
Maximum Supply Voltage V

(2)

E

CC,MAX

Analog Input Voltage Range V
Total Power Dissipation

Derating 0.6 W/°C
Operating Junction Temperature. T
Operating Ambient Temperature. T
Storage Temperature Range. T

DGR

GS

DM

D
D

AS

FB

P

D

J
A

STG

DGR

GS

DM

D
D

AS

FB

P

D

J
A

STG

650 V
650 V
±30 V

12.0 A

3.0 A

2.4 A

358 mJ

30 V

-0.3 to V

SD

75 W

+160 °C

-25 to +85 °C

-55 to +150 °C

800 V
800 V
±30 V

12.0 A

3.0 A

2.1 A
95 mJ
30 V

-0.3 to V

SD

75 W

+160 °C

-25 to +85 °C

-55 to +150 °C

DC
DC
DC

V

DC
DC
DC

V

Note:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L = 51mH, starting Tj = 25°C

3. L = 13µH, starting Tj = 25°C

2

KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Characteristic Symbol Value Unit
KA5M0365RN, KA5L0365RN

Maximum Drain Voltage V
Drain-Gate Voltage (R

=1MΩ)V

GS

D,MAX

Gate-Source (GND) Voltage V
Drain Current Pulsed

(1)

I
Continuous Drain Current (Ta=25°C) I
Continuous Drain Current (Ta=100°C) I
Single Pulsed Avalanche Energy
Maximum Supply Voltage V

(2)

E

CC,MAX

Analog Input Voltage Range V
Total Power Dissipation

Derating 0.0125 W/°C
Operating Junction Temperature. T
Operating Ambient Temperature. T
Storage Temperature Range. T

DGR

GS

DM

D
D

AS

FB

P

D

J
A

STG

650 V
650 V
±30 V

12.0 A

0.42 A

0.28 A
127 mJ

30 V

-0.3 to V

SD

1.56 W

+160 °C

-25 to +85 °C

-55 to +150 °C

DC
DC
DC

V

Note:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L = 51mH, starting Tj = 25°C

3. L = 13µH, starting Tj = 25°C

3

KA5X03XX-SERIES

Electrical Characteristic s (S enseFET Part)

(Ta = 25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit
KA5H0365R, KA5M0365R, KA5L0365R

Drain-Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Static Drain-Source on Resistance
Forward Transconductance

(Note)

(Note)

DSS

DSS

R

DS(ON)VGS

gfs VDS=50V, ID=0.5A 2.0 - - S

Input Capacitance Ciss

Reverse Transfer Capacitance Crss - 40 ­Turn On Delay Time td(on) V
Rise Time tr - 100 ­Turn Off Delay Time td(off) - 150 ­Fall Time tf - 42 ­Total Gate Charge

(Gate-Source+Gate-Drain)

Qg

Gate-Source Charge Qgs - 7.3 ­Gate-Drain (Miller) Charge Qgd - 13.3 -

VGS=0V, ID=50µA 650 - - V
VDS=Max. Rating, VGS=0V - - 50 µA
V

=0.8Max. Rating,

DS

V

=0V, TC=125°C

GS

- - 200 µA

=10V, ID=0.5A - 3.6 4.5 Ω

- 720 -

V

=0V, VDS=25V,

GS

f=1MHz

DD

=0.5BV

DSS

, ID=1.0A

- 150 ­(MOSFET switching
time is essentially
independent of
operating temperature)

V

=10V, ID=1.0A,

V

GS
DS

=0.5BV

(MOSFET

DSS

--34
switching time is essentially

independent of
operating temperature)

pFOutput Capacitance Coss - 40 -

nS

nC

KA5H0380R, KA5M0380R, KA5L0380R

Drain-Source Breakdown Voltage BV

DSS

VGS=0V, ID=50µA 800 - - V
VDS=Max. Rating, VGS=0V - - 250 µA

Zero Gate Voltage Drain Current I

Static Drain-Source on Resistance
Forward Transconductance

(Note)

(Note)

Input Capacitance Ciss

DSS

R

DS(ON)VGS

V

=0.8Max. Rating,

DS

=0V, TC=125°C

V

GS

- - 1000 µA

=10V, ID=0.5A - 4.0 5.0

gfs VDS=50V, ID=0.5A 1.5 2.5 - S

- 779 -

=0V, VDS=25V,

V

GS

f=1MHz

Reverse Transfer Capacitance Crss - 24.9 ­Turn On Delay Time td(on) V
Rise Time tr - 95 ­Turn Off Delay Time td(off) - 150 ­Fall Time tf - 60 ­Total Gate Charge

(Gate-Source+Gate-Drain)

Qg

Gate-Source Charge Qgs - 7.2 ­Gate-Drain (Miller) Charge

Note:

1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%

2.

1

--- -=

S

R

Qgd - 12.1 -

DD

=0.5BV

DSS

, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)

V

=10V, ID=1.0A,

GS

V

DS

=0.5BV

(MOSFET

DSS

switching time is
essentially independent of
operating temperature)

-40-

--34

Ω

pFOutput Capacitance Coss - 75.6 -

nS

nC

4

KA5X03XX-SERIES

Electrical Characteristic s (S enseFET Part)

(Ta = 25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit
KA5M0365RN, KA5L0365RN

Drain-Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Static Drain-Source on Resistance
Forward Transconductance

(Note)

(Note)

DSS

DSS

R

DS(ON)VGS

gfs VDS=50V, ID=0.5A 2.0 - - S

Input Capacitance Ciss

Reverse Transfer Capacitance Crss - 9 ­Turn On Delay Time td(on) V
Rise Time tr - 34 ­Turn Off Delay Time td(off) - 28.2 ­Fall Time tf - 32 ­Total Gate Charge

(Gate-Source+Gate-Drain)

Qg

Gate-Source Charge Qgs - 1.95 ­Gate-Drain (Miller) Charge Qgd 6.85

VGS=0V, ID=50µA 650 - - V
VDS=Max. Rating, VGS=0V - - 50 µA
V

=0.8Max. Rating,

DS

V

=0V, TC=125°C

GS

- - 200 µA

=10V, ID=0.5A - 3.6 4.5 Ω

- 314.9 -

V

=0V, VDS=25V,

GS

f=1MHz

DD

=0.5BV

DSS

, ID=1.0A

-11.2­(MOSFET switching
time is essentially
independent of
operating temperature)

V

=10V, ID=1.0A,

V

GS
DS

=0.5BV

(MOSFET

DSS

11.93

switching time is
essentially independent of
operating temperature)

pFOutput Capacitance Coss - 47 -

nS

nC

Note:

1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%

2.

1

S

--- -=

R

5

KA5X03XX-SERIES

Electrical Characteristics (Control Part)

(Continued)

(Ta = 25°C unless otherwise specified)

Characteristic Symbol Test condition Min. Typ. Max. Unit
UVLO SECTION

Start Threshold Voltage V
Stop Threshold Voltage V

START

STOP

VFB=GND 14 15 16 V
VFB=GND 8.499.6V

OSCILLATOR SECTION

Initial Accuracy F

OSC

KA5H0365R
KA5H0380R

90 100 110 kHz

KA5M0365R

Initial Accuracy F

OSC

KA5M0365RN

61 67 73 kHz

KA5M0380R
KA5L0365R

Initial Accuracy F

OSC

KA5L0365RN

45 50 55 kHz

KA5L0380R

Frequency Change With Temperature
Maximum Duty Cycle Dmax

(2)

--25°C≤Ta≤+85°C-±5 ±10 %

KA5H0365R
KA5H0380R

62 67 72 %

KA5M0365R
KA5M0365RN

Maximum Duty Cycle Dmax

KA5M0380R
KA5L0365R

72 77 82 %

KA5L0365RN
KA5L0380R

FEEDBACK SECTION

Feedback Source Current I
Shutdown Feedback Voltage V

FB

SD

Shutdown Delay Current Idelay Ta=25°C, 5V≤Vfb≤V

Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA
Vfb>6.5V 6.9 7.5 8.1 V

SD

456µA

REFERENCE SECTION

Output Voltage
Temperature Stability

(1)

(1)(2)

Vref Ta=25°C 4.80 5.00 5.20 V

Vref/∆T-25°C≤Ta≤+85°C-0.30.6mV/°C

CURRENT LIMIT(SELF-PROTECTION)SECTION

Peak Current Limit I

OVER

Max. inductor current 1.89 2.15 2.41 A

PROTECTION SECTION

Over Voltage Protection V
Thermal Shutdown Temperature (Tj)

(1)

OVP

T

SD

VCC>24V 25 27 29 V

- 140 160 - °C

TOTAL STANDBY CURRENT SECTION

Start-up Current I
Operating Supply Current

(Control Part Only)

START

I

OP

VCC=14V - 100 170 µA
VCC<28 - 7 12 mA

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS(water test) process

6

Typ ical Performance Characteristics(Sens eF ET part)

(KA5H0365R, KA5M0365R, KA5L0365R)

KA5X03XX-SERIES

10

V

GS

Top : 15 V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
Bo ttom :4.5 V

1

, Drain Cu rrent [ A]

D

I

0.1
110

@Notes:

1. 300 µs Pulse Test

2. TC = 25 oC

VDS, Drain-S ourc e Voltage [V ]

Figure 1. Ou tput Characteristics

7

6

5

]

4

Ω

, [

3

DS(on)

R

2

1

Drain-Source On-Resistance

0

012345

Vgs=10V

Vgs=20V

@ Note : T j=25

ID,Drain Current [A]

10

150 oC

1

, Drain Current [A]

D

I

25 oC

0.1
246810

-25oC
@Notes:

1. VDS = 30V

2. 300 µs Pulse Test

VGS, G ate-S ource Voltage [V]

Figure 2. Transfer Characteristics

1

0.1

℃

, Reverse Drain Current [A]

DR

I

0.01

0.4 0.6 0.8 1.0 1.2

25 oC150 oC

@Notes :

1. V G S = 0 V

2. 3 0 0 µs Pulse Test

VSD, S o ur ce - D ra in Volta g e [ V]

Figure 3. On-Resistance vs. Drain Current

700

C

= Cgs + Cgd (Cds = shorted)

600

500

400

300

Capacitance [pF]

200

100

0

C

iss

C

oss

C

rss

0

10

iss

C

oss

C

rss

= Cds + C

= C

1

10

gd

gd

VDS, Drain-Source Voltage [V]

Figure 5. Capacitanc e vs. Drain-Source Voltage

Figure 4. Source-Drain Dio d e Forward Voltage

10

8

6

4

,G at e-S ourc e Voltage[V ]

GS

2

V

0

0 5 10 15 20 25

VDS=130 V

VDS=320V

VDS=520 V

@ N o te : ID=3.0A

QG,Total Gate Charge [nC]

Figure 6. Gate Charge vs. Gate-Source Voltage

7

KA5X03XX-SERIES

Typ ical Performance Characteristics

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-50 0 50 100 150

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage vs. Temperature

2

10

1

10

0

10

Operation in This Area
is Limited by R

DS(on)

10 ms

DC

@ Notes :

1. VGS = 0V

2. ID = 250µA

100 µs

1 ms

10 µs

(Continued)

2.5

2.0

1.5

, (Normalized)

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

0.0

Figure 8. On -Resistance vs. Temperature

3.0

2.5

2.0

1.5

@ Notes :

1. VGS = 10 V

2. ID = 1.5 A

-50 0 50 100 150

TJ, Junction Temper ature [oC]

, Drain Current [A]

D

-1

10

I

-2

10

0

10

@ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

1

10

VDS , Drain-Source Voltage [V]

Figure 9. Max. Safe Operating Area

0

10

D=0.5

0.2

0.1

-1

10

0.05

(t) , Thermal Response

0.02

JC

θ

0.01

Z

-2

10

-5

10

1.0

, Drain Current [A ]

D

I

0.5

2

10

3

10

0.0
25 50 75 100 125 150

Figure 10. Max. Drain Current vs. Case Temperature

@ Notes :

1. Z

JC

θ

2. Duty Factor, D=t1/t

3. TJM-TC=PDM*Z

single pulse

-4

10

-3

10

-2

10

-1

10

t1 , Square Wave Pulse Duration [s ec]

TC, Case Temperat ure [oC]

(t)=1.25 oC/W Max.

2

(t)

JC

θ

0

10

1

10

Figure 11. Thermal Response

8

KA5X03XX-SERIES

Typ ical Performance Characteristics

(KA5H0380R, KA5M0380R, KA5L0380R)

1

10

V

GS

Top : 15V
10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V
Botto m:4.5 V

0

10

, Drain Current [A]

D

I

-1

10

0

10

VDS, Drain-S o urc e Voltage [V]

Figure 1. Output Characteristics Figure 2. Thansfer Characteristics

8

7

6

5

]

Ω

4

, [

DS(on)

3

R

2

Drain-So urc e On-Resistance

1

0

01234

Fig3. On-Resistance vs. Drain Current

Vgs=10V

ID,Drain Current

@Notes:

1. 3 0 0µs Pu lse Te st

2. TC = 25 oC

1

10

Vgs=20V

@ N o te : T j=25

℃

(Continued)

1

10

0

10

, Drain Current [ A]

D

I

-1

10

10

1

, Rev erse Drain Current [ A]

DR

I

0.1

0.4 0.6 0.8 1.0

150 oC

-25 oC25 oC

246810

@ Not es:

1. VDS = 30 V

2. 3 0 0 µs Pulse Te st

VGS, Gate-Source Voltage [V]

150 oC

25 oC

@ Not es:

1. VGS = 0V

2. 300 µs Pulse Te st

VSD, Sourc e-Dr ain V oltag e [V]

Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage

1000

C

900
800
700
600
500
400
300

Capacitance [pF]

200
100

0

C

iss

C

oss

C

rss

0

10

VDS, Drain-Sourc e Voltage [V ]

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

1

10

10

8

6

4

,G ate-S ource Voltage[V]

GS

2

V

0

0 5 10 15 20 25 30

VDS=160V

VDS=400V

VDS=640V

@ Note : ID=3.0A

QG,Tot al G at e C harge [ nC]

Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

9

KA5X03XX-SERIES

Typ ical Performance Characteristics

(Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

1.2

1.1

1.0

, (Normalized)

DSS

BV

0.9

Drain- S our ce Breakdown Voltage

0.8

-50 0 50 100 150

, Junction Temperature [oC]

T

J

@ Note s :

1. VGS = 0V

2. ID = 250µA

Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature

2

10

1

10

0

10

, Drain Current [A]

-1

D

10

I

-2

10

Operation in This Area

1

10

is Limited by R

@ Notes :

1. T

2. T

3. Single Pulse

= 25 oC

C

= 150 oC

J

DS(on)

10

DC

2

1 ms

10 ms

VDS , Drain-Source Voltage [V]

100 µs

10 µs

3

10

2.5

2.0

1.5

1.0

, (Normalized)

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-50 0 50 100 150

3.5

3.0

2.5

2.0

1.5

, Drain Current [A]

1.0

D

I

0.5

0.0

TJ, Junction Temperature [oC]

40 60 80 100 120 140

@ Notes:

1. VGS = 10V

2. ID = 1.5 A

TC, Case Temperature [oC]

10

Figure 9. Max. Sa fe Operating Area

0

10

D=0.5

0.2

0.1

-1

10

0.05

0.02

(t) , Thermal Response

0.01

JC

θ

Z

-2

10

-5

10

single pulse

-4

10

t1 , Square Wave Pul se Dura tion [se c]

Figure 10. Max. Drain Current vs. Case Temperature

@ Notes :

1. Z

2. Duty Factor, D=t1/t

3. TJM-TC=PDM*Z

-3

10

-2

10

10

Figure 11. Thermal Response

(t)=1.25 oC/W Max.

JC

θ

-1

10

2

(t)

JC

θ

0

1

10

KA5X03XX-SERIES

Typ i cal Performance Characte ri sti c s(SenseFET part)

(KA5M0365RN, KA5L0365RN)

1

10

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

0

10

, Drain Current [A]

D

I

-1

10

0

10

VDS, Drain-Source Voltage [V]

Figure 1. Outp ut Characteristics

8.0

7.5

7.0

6.5

6.0

],

Ω

5.5

[

5.0

DS(ON)

R

4.5

4.0

3.5

Drain-Source On-Resistance

3.0

2.5
01234567

Figure 3. On -Resistance vs. Drain Curre nt Figure 4. Source-D rain Diode Fo rward Voltage

700

600

500

400

300

200

Capacitances [pF]

100

VGS = 10V

VGS = 20V

ID, Drain Curre nt [A]

C

iss

C

oss

C

rss

※

Note :

1. 2 50μs Pulse Te st

℃

2. TC = 25

1

10

※

= 25

Note : T

J

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

※

Note ;

1. V

GS

2. f = 1 MHz

= 0 V

1

10

℃

150

0

10

, Drain Current [A]

D

I

-1

10

246810

℃

25

VGS , Gate-Source Voltage [V]

Figure 2. Transfer Char acteristics

1

10

0

10

, Rev erse Drain Current [A]

DR

℃

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4

12

10

8

6

4

, Gate-Source Voltage [V]

GS

2

V

℃

150

VSD , Source-Drain Voltage [V]

(Continued)

-55

℃

25

VDS = 130V

VDS = 325V

VDS = 520V

℃

※

Note

1. V

DS

2. 250μs Pulse Test

※

Note :

1. VGS = 0V

2. 250μs Pulse Test

※

Note : I

= 50V

= 3.0 A

D

-1

10

0

10

1

10

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance vs. Drain-Source Voltage

0

024681012

QG, Total Gate Charge [nC]

Figure 6. Gate Charge vs. Gate-Source Voltage

11

KA5X03XX-SERIES

Typ ical Performance Characteristics

( KA5M0365RN, KA5L0365RN)

DC

※

Note :

= 0 V

1. V

GS

2. I

= 250 μA

D

10 µs
100 µs

1 ms

10 ms

100 ms

1 s

10 s

1.15

1.10

1.05

1.00

, (Normalized)

DSS

0.95

BV

0.90

Drain-Source Breakdown Voltage

-50 0 50 100 150

TJ, Junction Temperature [oC]

Figure 7. Breakdown Voltage vs. Temperature

1

10

0

10

-1

10

, Drain Current [A]

-2

D

I

10

Operation in This Area
is Limited by R

DS(on)

(Continued)

2.5

2.0

, (Normalized)

DS(ON)

R

Drain-Source On-Resi stance

1.5

1.0

0.5

-50 0 50 100 150

TJ, Junction Temperature [oC]

Figure 8. On -Resistanc e vs. Temperature

0.5

0.4

0.3

0.2

, Drain Current [A]

D

I

0.1

※

Note :

1. V

= 10 V

GS

= 1.5 A

2. I

D

-3

10

0

10

1

10

VDS, Drain-Source Voltage [V]

Figure 9. Max. Safe Operating Area

10

1

(t), Thermal Response

?JC

Z

0.1

1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000

2

10

D=0.5

0.2

0.1

0.05

0.02

0.01

single p ulse

t1, Square Wave Pulse Duration [sec]

Figure 11. Thermal Response

0.0
25 50 75 100 125 150

TC, Ca s e Te mperatu re [? ]

Figure 10. Max. Drain Current vs. Case Temperature

? Notes :

(t) = 80 ? /W Max.

1. Z

?JC

2. Duty Facto r, D=t

3. TJM - TC = PDM * Z

1/t2

?JC

(t)

12

KA5X03XX-SERIES

Typical Performance Characteristics (Control Part)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.1 Operating Freque ncy

1.2

1.15

1.1

1.05

Fosc

1

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

Figure 1. Operating Frequency

Fig. 3 Operating Current

1.2

1.15

1.1

1.05

Iop

1

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

1.15

1.05

Ifb

0.95

0.85

Ipeak

I

over

Fig.2 Feedbac k Source Current

1.2

1.1

1

0.9

0.8

-25 0 25 50 75 100 125 150

Figure 2. Feedback Sourc e Current

1.1

1.05

0.95

0.9

0.85

0.8

Fig.4 Max I nductor Cur r e nt

1

-25 0 25 50 75 100 125 150

(Continued)

Figure 3. Opera ting Supply Curr ent

Fig.5 Star t up Current

-25 0 25 50 75 100 125 150

Istart

1.5

1.3

1.1

0.9

0.7

0.5

Figure 5. Start up Current

Figure 4. Peak Current Limit

Fig.6 Star t Threshold Voltage

1.15

1.1

1.05

Vstart

1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Figure 6. St art Threshold Voltage

13

KA5X03XX-SERIES

Typ ica l Performance Characteristics

(Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.7 Stop Threshold V oltage

1.15

1.1

1.05
1

Vstop

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Figure 7. Stop Threshold Voltage

1.2

1.15

1.1

1.05

Vz

0.95

0.9

0.85

0.8

Fig.9 Vcc Zener Volt age

1

-25 0 25 50 75 100 125 150

F ig.8 Maximum Duty Cycle

1.15

1.1

1.05
1

Dmax

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Figure 8. Maximum Du ty Cycle

Fig.10 Shutdown Feedback Voltage

1.15

1.1

1.05

Vsd

1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Figure 9. V

Zener Voltage

CC

Fig.11 Shut do wn De lay Curr e nt

1.2

1.15

1.1

1.05

Idelay

1

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

Figure 11. Shutdown Delay Current

Figure 10. Shutdown Feedback Voltage

Fig.12 Over Voltage Pr otection

1.15

1.1

1.05

Vovp

1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Figure 12. Over Voltage Protection

14

KA5X03XX-SERIES

Typ ical Performance Characteristics

(Continued)

(These characteristic graphs are normalized at Ta = 25°C)

1.15

1.1

1.05

Vss

1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Figure13. Soft Start Voltage

Fig.13 Soft Start Voltage

Fig.14 Drain Sour c e Turn-on

Resistance

2.5
2

1.5

()

Rdson

1

0.5
0

-25 0 25 50 75 100 125 150

Figure 14. Stat ic Drain-Sour ce on Resistance

15

KA5X03XX-SERIES

Package Dimensions

TO-220F-4L

16

KA5X03XX-SERIES

Package Dimensions

(Continued)

TO-220F-4L(Forming)

17

KA5X03XX-SERIES

Package Dimensions

(Continued)

8-DIP

18

Ordering Information

KA5X03XX-SERIES

Product Number Package Marking Code BV

KA5H0365RTU TO-220F-4L
KA5H0365RYDTU TO-220F-4L(Forming)

KA5M0365RTU TO-220F-4L
KA5M0365RYDTU TO-220F-4L(Forming)

KA5L0365RTU TO-220F-4L
KA5L0365RYDTU TO-220F-4L(Forming)

5H0365R 650V 100kHz 3.6Ω

5M0365R 650V 67kHz 3.6Ω

5L0365R 650V 50kHz 3.6Ω

DSS

F

OSC

R

DS(on)

KA5M0365RN 8-DIP 5M0365R 650V 67kHz 3.6Ω
KA5L0365RN 8-DIP 5L0365R 650V 50kHz 3.6Ω

Product Number Package Marking Code BV

KA5H0380RTU TO-220F-4L
KA5H0380RYDTU TO-220F-4L(Forming)

KA5M0380RTU TO-220F-4L
KA5M0380RYDTU TO-220F-4L(Forming)

KA5L0380RTU TO-220F-4L
KA5L0380RYDTU TO-220F-4L(Forming)

TU :Non Forming Type
YDTU : Forming type

5H0380R 800V 100kHz 4.6Ω

5M0380R 800V 67kHz 4.6Ω

5L0380R 800V 50kHz 4.6Ω

DSS

F

OSC

R

DS(on)

19

KA5X03XX-SERIES

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURT HER NOTICE TO ANY
PRODUCTS HEREI N TO IMPROVE RELIABILITY, FUNCTIO N OR DESIGN. FAIRCH IL D DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER IT S PATENT RIGHTS, NOR THE RIGHTS OF OTHE RS.

LIFE SUPPORT POL I CY

FAIRCHILD’S PR ODUCTS ARE NOT AUTH ORIZED FOR USE AS C RITICAL COMPONENT S IN LIFE SUPPORT DE VICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein :

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with

2. A critical component in any component of a life support
device or sy stem whose fai lure to perform can be
reasonably expec ted to cause the failur e of the life support
device or system, or to affect its safety or effec t iv ene ss .

instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

www.fairchildsemi.com

12/12/02 0.0m 001

 2002 Fairchild Semiconductor Corporation

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