Datasheet KA5M0365RN Specification

Page 1
KA5x0365RN-SERIES
KA5M0365RN, KA5L0365RN Fairchild Power Switch(FPS)
www.fairchildsemi.com
Features
• Precision Fixed Operating Frequency (67/50kHz)
• Low Start-up Current(Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Current Protection
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
Description
The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter
8-DIP
1.6.7.8 Drain 2.GND 3.Vcc 4.FB 5.NC
Internal Block Diagram
#3 V
CC
32V
µ
A
5
#4 FB
+
7.5V
27V
©2003 Fairchild Semiconductor Corporation
+
5V
Vref
OSC
9V
1mA
2.5R 1R
OVER VOLTAGE S/D
+
Thermal S/D
L.E.B
0.1V
Good
logic
S
R
Internal
bias
Q
S
R
Power on reset
#1,6,7,8
SFET
Q
DRAIN
#2 GND
Rev.1.0.6
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KA5X0365RN-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic Symbol Value Unit
KA5M0365RN, KA5L0365RN
Drain-Gate Voltage (R
=1M)V
GS
Gate-Source (GND) Voltage V
Drain Current Pulsed
(1)
I
Continuous Drain Current (Ta=25°C) I
Continuous Drain Current (Ta=100°C) I
Single Pulsed Avalanche Energy
Maximum Supply Voltage V
(2)
E
CC,MAX
Analog Input Voltage Range V
Total Power Dissipation
Derating 0.0125 W/°C
Operating Junction Temperature. T
Operating Ambient Temperature. T
Storage Temperature Range. T
DGR
GS
DM
D
D
AS
FB
P
D
J
A
STG
650 V
±30 V
3A
0.42 A
0.28 A
127 mJ
30 V
-0.3 to V
SD
1.56 W
+160 °C
-25 to +85 °C
-55 to +150 °C
DC
DC
DC
V
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13µH, starting Tj = 25°C
2
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KA5X0365RN-SERIES
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
KA5M0365RN, KA5L0365RN
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Static Drain-Source on Resistance
Forward Transconductance
(Note)
(Note)
DSS
DSS
R
DS(ON)VGS
gfs VDS=50V, ID=0.5A 2.0 - - S
Input Capacitance Ciss
Reverse Transfer Capacitance Crss - 9 -
Turn On Delay Time td(on) V
Rise Time tr - 34 -
Turn Off Delay Time td(off) - 28.2 -
Fall Time tf - 32 -
Total Gate Charge (Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 1.95 -
Gate-Drain (Miller) Charge Qgd 6.85
VGS=0V, ID=50µA 650 - - V
VDS=Max. Rating, VGS=0V - - 50 µA
=0.8Max. Rating,
V
DS
V
=0V, TC=125°C
GS
- - 200 µA
=10V, ID=0.5A - 3.6 4.5
- 314.9 -
=0V, VDS=25V,
V
GS
f=1MHz
=0.5BV
DD
DSS
, ID=1.0A
-11.2­(MOSFET switching time is essentially independent of operating temperature)
V
=10V, ID=1.0A,
V
GS
=0.5BV
DS
(MOSFET
DSS
11. 93
switching time is essentially independent of operating temperature)
pFOutput Capacitance Coss - 47 -
nS
nC
Note:
1. Pulse test: Pulse width 300µS, duty 2%
2.
1
S
----=
R
3
Page 4
KA5X0365RN-SERIES
Electrical Characteristics (Control Part) (Continued)
(Ta = 25°C unless otherwise specified)
Characteristic Symbol Test condition Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage V
Stop Threshold Voltage V
START
STOP
OSCILLATOR SECTION
Initial Accuracy F
Initial Accuracy F
Frequency Change With Temperature
(2)
OSC
OSC
--25°C≤Ta≤+85°C-±5 ±10 %
Maximum Duty Cycle Dmax 72 77 82 %
FEEDBACK SECTION
Feedback Source Current I
Shutdown Feedback Voltage V
FB
SD
Shutdown Delay Current Idelay Ta=25°C, 5V≤Vfb≤V
REFERENCE SECTION
Output Voltage
(1)
Temperature Stability
(1)(2)
Vref Ta=25°C 4.805.005.20 V
Vref/T-25°C≤Ta≤+85°C-0.30.6mV/°C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit I
OVER Max. inductor current 1.89 2.15 2.41 A
PROTECTION SECTION
Over Voltage Protection V
Thermal Shutdown Temperature (Tj)
(1)
OVP
T
SD
TOTAL STANDBY CURRENT SECTION
Start-up Current I
Operating Supply Current (Control Part Only)
START
I
OP
VFB=GND 14 15 16 V
VFB=GND 8.499.6V
KA5M0365RN 61 67 73 kHz
KA5L0365RN 45 50 55 kHz
Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA
Vfb>6.5V 6.9 7.5 8.1 V
SD
456µA
VCC>24V 25 27 29 V
- 140 160 -
VCC=14V - 100 170 µA
VCC<28 - 7 12 mA
C
°
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
4
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Typical Performance Characteristics(SenseFET part) (Continued)
(KA5M0365RN, KA5L0365RN)
KA5X0365RN-SERIES
1
10
0
10
V Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V Bottom : 5.5 V
GS
1
10
150
0
10
-55
25
, Drain Current [A]
D
I
-1
10
0
10
VDS, Drai n-Source Voltage [V]
Figure 1. Output Characteristics
8.0
7.5
7.0
6.5
6.0
5.5
[],
5.0
DS(ON)
R
4.5
4.0
3.5
Drain-Source On-Resistance
3.0
2.5 01234567
ID, Drain Current [A]
VGS = 20V
VGS = 10V
Note :
1. 250µ s Pulse Test
2. T
= 25
C
1
10
Note : TJ = 25
, Drain Current [A]
D
I
-1
10
246810
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
1
10
0
10
, Reverse Drain Current [A]
DR
I
-1
10
0.2 0.4 0. 6 0.8 1.0 1.2 1.4
150
25
VSD , Source-Drain Voltage [V]
Note
1. VDS = 50V
2. 250µ s Pulse Test
Note :
1. VGS = 0V
2. 250µ s Pulse Test
Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage
700
600
500
400
300
200
Capacitances [pF]
100
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
C
iss
C
oss
C
rss
Note ;
1. VGS = 0 V
2. f = 1 MHz
12
10
8
6
4
, Gate-Source Voltage [V]
GS
2
V
VDS = 130V
VDS = 325V
VDS = 520V
Note : ID = 3.0 A
-1
10
0
10
1
10
VDS, Drain-Source Volt age [V]
Figure 5. Capacitance vs. Drain-Source Voltage
0
024681012
QG, Total Gate Charge [nC]
Figure 6. Gate Charge vs. Gate-Source Voltage
5
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KA5X0365RN-SERIES
Typical Performance Characteristics (Continued)
( KA5M0365RN, KA5L0365RN)
1.15
1.10
1.05
1.00
, (Normalized)
DSS
0.95
BV
1. VGS = 0 V
0.90
Drain-Source Breakdown Voltage
-50 0 50 100 150
2. I
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage vs. Temperature
1
10
0
10
-1
10
, Drain Current [A]
-2
D
I
10
Operation in Thi s Area is Limit ed by R
DS(on)
DC
10 s
1 ms
10 ms
100 ms
1 s
Note :
D
= 250 µ A
10 µs 100 µs
2.5
2.0
, (Normalized)
DS(ON)
R
1.5
1.0
Drain-Source On-Resistance
0.5
-50 0 50 100 150
TJ, Junction Temperature [oC]
Figure 8. On-Resistance vs. Temperature
0.5
0.4
0.3
0.2
, Drain Current [A]
D
I
0.1
Note :
1. VGS = 10 V = 1.5 A
2. I
D
-3
10
0
10
1
10
VDS, Drain-Source Volt age [V]
Figure 9. Max. Safe Operating Area
10
1
(t), Thermal Response
?JC
Z
0.1
1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000
2
10
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
t1, Square Wave Pulse Duration [sec]
Figure 11. Thermal Response
0.0 25 50 75 100 125 150
TC, Case Temperature [? ]
Figure 10. Max. Drain Current vs. Case Temperature
? Notes :
1. Z
(t) = 80 ? /W Max.
?JC
2. Duty Factor, D= t
3. TJM - TC = PDM * Z
1/t2
?JC
(t)
6
Page 7
Typical Performance Characteristics (Control Part) (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
KA5X0365RN-SERIES
Fig.1 Operating Frequency
1.2
1.15
1.1
1.05
Fos c
1
0.95
0.9
0.85
0.8
-25 0 25 50 75 100 125 150
Figure 1. Operating Frequency
Fig.3 Operating Current
1.2
1.15
1.1
1.05
Iop
1
0.95
0.9
0.85
0.8
-25 0 25 50 75 100 125 150
1.15
1.05
Ifb
0.95
0.85
Fig.2 Feedback Source Current
1.2
1.1
1
0.9
0.8
-25 0 25 50 75 100 125 150
Figure 2. Feedback Source Current
Fig.4 Max Inductor Current
1
-25 0 25 50 75 100 125 150
Ipe ak
I
over
1.1
1.05
0.95
0.9
0.85
0.8
Figure 3. Operating Supply Current
Fig.5 Start up Current
-25 0 25 50 75 100 125 150
Istart
1.5
1.3
1.1
0.9
0.7
0.5
Figure 5. Start up Current
Figure 4. Peak Current Limit
Fig.6 Start Threshold Voltage
1.15
1.1
1.05
Vs ta rt
1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Figure 6. Start Threshold Voltage
7
Page 8
KA5X0365RN-SERIES
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
Fig.7 Stop Threshold Voltage
1.15
1.1
1.05
Vs to p
1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Figure 7. Stop Threshold Voltage
1.2
1.15
1.1
1.05
Vz
0.95
0.9
0.85
0.8
Fig.9 Vcc Zener Voltage
1
-25 0 25 50 75 100 125 150
Dmax
Fig.8 Maximum Duty Cycle
1.15
1.1
1.05
1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Figure 8. Maximum Duty Cycle
Fig.10 Shutdown Feedback Voltage
1.15
1.1
1.05
Vs d
1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Figure 9. V
Zener Voltage
CC
Fig.11 Shutdown Delay Current
1.2
1.15
1.1
1.05
Idelay
1
0.95
0.9
0.85
0.8
-25 0 25 50 75 100 125 150
Figure 11. Shutdown Delay Current
Figure 10. Shutdown Feedback Voltage
Fig.12 Over Voltage Protection
1.15
1.1
1.05
Vovp
1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Figure 12. Over Voltage Protection
8
Page 9
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
KA5X0365RN-SERIES
1.15
1.1
1.05
Vs s
1
0.95
0.9
0.85
-25 0 25 50 75 100 125 150
Figure13. Soft Start Voltage
Fig.13 Soft Start Voltage
Fig.14 Drain Source Turn-on
Resistance
2.5
2
1.5
()
Rdson
1
0.5
0
-25 0 25 50 75 100 125 150
Figure 14. Static Drain-Source on Resistance
9
Page 10
KA5X0365RN-SERIES
Package Dimensions
8-DIP
10
Page 11
Ordering Information
KA5X0365RN-SERIES
Product Number Package Marking Code BV
DSS
F
OSC
R
DS(on)
KA5M0365RN 8-DIP 5M0365R 650V 67kHz 3.6
KA5L0365RN 8-DIP 5L0365R 650V 50kHz 3.6
11
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KA5X0365RN-SERIES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with
2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
www.fairchildsemi.com
12/9/03 0.0m 001
2003 Fairchild Semiconductor Corporation
Stock#DSxxxxxxxx
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