Datasheet KA3S1265RF Datasheet (Fairchild Semiconductor)

Page 1
©2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.2
Features
• Wide operatimg frequency range up to (150kHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protecton (Min. 23V)
• Under voltage lockout
• Internal high voltage sense FET
• External sync terminal
• Auto Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal extern al components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included control IC features a trimmed oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. compared to discrete MOSFET and controller or R
CC
switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective C-TV power supply.
TO-3P-5L
1. DRAIN 2. GND 3. Vcc 4. FB 5. Sync
TO-3PF-5L
1
1
Internal Block Diagram
#3 V
CC
32V
2
µ
A
5V
2.5R 1R
1mA
0.1V
+
OVER VOLTAGE S/D
+
7.5V
25V
Thermal S/D
S R
Q
Power on reset
+
L.E.B
S R
Q
OSC
5V
Vref
Internal
bias
Good
logic
SFET
#1 DRAIN
#2 GND
#4 FB
#5 Sync
9V
+
6.4V
KA3S1265R/KA3S1265RF/ KA3S1265RD
Fairchild Power S witch(FPS)
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KA3S1265R/KA3S1265RF/KA3S1265RD
2
Absolute Maximum Ratings
Note:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum juncti on temperature
3. L=10mH, V
DD=
50V, RG=27Ω, starting Tj=25 °C
Characteristic Symbol Value Unit
Maximum drain voltage
(1)
V
D,MAX
650 V
Drain-gate voltage (R
GS
=1MΩ)
V
DGR
650 V
Gate-source (GND) voltage
V
GS
±30 V
Drain current pulsed
(2)
I
DM
48.0 A
DC
Single pulsed avalanche energy
(3)
E
AS
785 mJ
Continuous drain current (T
C
=25°C)
I
D
12 A
DC
Continuous drain current (TC=100°C)
I
D
8.4 A
DC
Maximum supply voltage
V
CC,MAX
30 V
Input voltage range
V
FB
0.3 to V
SD
V
Total power dissipation
P
D
269 W
Derating
2.17 W/°C
Operating ambient temperature
T
A
25 to +85 °C
Storage temperature
T
STG
55 to +150 °C
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KA3S1265R/KA3S1265RF/KA3S1265RD
3
Electrical Characteristics (SFET part)
(Ta = 25°C unless otherwise specified)
Note:
Pulse test: P ulse width ≤ 300µS, duty cycle ≤ 2%
Characteristic Symbol Test condition Min. Typ. Max. Unit
Drain-source breakdown voltage BV
DSS
VGS=0V, ID=50µA 650 - - V
Zero gate voltage drain current I
DSS
VDS=Max., Rating, V
GS
=0V
--50µA
V
DS
=0.8Max., Rating,
V
GS
=0V, TC=125°C
- - 200 mA
Static drain-source on resistance
(note)
R
DS(ON)VGS
=10V, ID=6.0A - 0.72 - W
Forward transconductance
(note)
gfs VDS=50V, ID=6.0A 5.7 - - S
Input capacitance Ciss
V
GS
=0V, VDS=25V,
f=1MHz
- 2700 ­pFOutput capacitance Coss - 300 -
Reverse transfer capacitance Crss - 61 ­Turn on delay time t
d(on)
VDD=0.5BV
DSS
, ID=12.0A (MOSFET switching time are essentially independent of operating temperature)
-18-
nS
Rise time tr - 37 ­Turn off delay time t
d(off)
-88­Fall time tf - 36 ­Total gate charge
(gate-source+gate-drain)
Qg
V
GS
=10V, ID=12.0A,
V
DS
=0.5BV
DSS
(MOSFET switching time are essentially independent of operating temperature)
- - 140 nC
Gate-source charge Qgs - 20 ­Gate-drain (Miller) charge Qgd - 69 -
S
1
R
--- -=
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KA3S1265R/KA3S1265RF/KA3S1265RD
4
Electrical Charcteristics (CONTROL part)
(Ta = 25°C unless otherwise specified)
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
3.The amplitude of the sync. pulse is recommended to be between 2V and 3V for stable sync. function.
Characteristic Symbol Test condition Min. Typ. Max. Unit
UVLO SECTION
Start threshold voltage V
START
-141516V
Stop threshold voltage V
STOP
After turn on 9 10 11 V
OSCILLATOR SECTION
Initial accuracy FOSC Ta=25°C182022kHz Frequency change with temperature
(2)
F/T 25°C Ta +85°C-±5 ±10 %
Maximum duty cycle Dmax - 92 95 98 %
FEEDBACK SECTION
Feedback source current I
FB
Ta=25°C, Vfb=GND 0.8 1 1.2 mA
Shutdown feedback voltage V
SD
-6.97.58.1V
Shutdown delay current I
delay
Ta=25°C, 5V Vfb V
SD
1.4 1.8 2.2 µA
SYNC. & SOFT START SECTION
Soft start voltage V
SS
VFB=2V 4.7 5.0 5.4 V
Soft start current I
SS
Sync & S/S=GND 0.8 - - mA
Sync threshold voltage V
SYTH
KA3S1265R,KA3S1265RF 6.0 6.4 6.8
VSync threshold voltage(ON)
(3)
V
SYTH(ON)
KA3S1265RD
6.86 7.23 7.60
Sync threshold voltage(OFF)
(3)
V
SYTH(OFF)
5.92 6.23 6.54
REFERENCE SECTION
Output voltage
(1)
Vref Ta=25°C 4.80 5.00 5.20 V
Temperature stability
(1)(2)
Vref/∆T 25°C ≤ Ta +85°C-0.30.6mV/°C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit I
OVER
Max. inductor current 7.04 8.00 8.96 A
PROTECTION SECTION
Thermal shutdown temperature (Tj)
(1)
T
SD
- 140 160 - °C
TOTAL DEVICE SECTION
Start Up current I
START
VCC=14V 0.1 0.3 0.55 mA
Operating supply current (Control Part Only)
I
OP
Ta=25°C 6 12 18 mA
V
cc
Zener voltage V
Z
ICC=20mA 30 32.5 35 V
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KA3S1265R/KA3S1265RF/KA3S1265RD
5
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta = 25°C)
Fig. 1 O p era t ing F r equenc y
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Fosc
Fig.2 Feedback Sourc e Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Ifb
Fig.3 Operating Cur rent
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Iop
Fig.4 Max Inductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25 0 25 50 75 100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25 0 25 50 75 100 125 150
Istart
Fig.6 Star t Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstart
Temperature [°C] Temperature [°C]
Temperature [
°
C
] Temperature [
°
C
]
Temperature [°
C
]Temperature [°C]
Figure 1. Operating Frequency Figure 2. Feedback Source Current
Figure 3. Operating Supply Current Figure 4. Peak Current Limit
Figure 5. Start up Current Figure 6. Start Threshold Voltage
Iover
I
ST
V
th(H)
IFB
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KA3S1265R/KA3S1265RF/KA3S1265RD
6
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
Fig.7 Stop Threshold V oltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstop
F i g .8 Maxi mum D u ty Cycl e
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Dmax
Fig.9 V c c Zener Voltage
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Vz
Fig.10 Shut dow n Feedback Voltag e
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vsd
Fig.11 Shut do wn Delay Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Idelay
Fig.12 Over Voltage Protection
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vovp
Temperature [°C] Temperature [°C]
Temperature [°
C
] Temperature [°C]
Temperature [°
C
]Temperature [°C]
Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle
Figure 9. V
CC
Zener Voltage Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection
V
th(L)
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KA3S1265R/KA3S1265RF/KA3S1265RD
7
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
Figure13. Soft Start Voltage
Figure 14. Static Drain-Source on Resistance
Fig.13 Soft Start Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vss
Fig.14 Drain Source Turn-on
Resistance
0
0.5
1
1.5
2
2.5
-25 0 25 50 75 100 125 150
Rdson
R
DS(on)
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KA3S1265R/KA3S1265RF/KA3S1265RD
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Package Dimensions
TO-3P-5L
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KA3S1265R/KA3S1265RF/KA3S1265RD
9
Package Dimensions
(Continued)
TO-3P-5L (Forming)
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KA3S1265R/KA3S1265RF/KA3S1265RD
10
Package Dimensions
(Continued)
TO-3PF-5L
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KA3S1265R/KA3S1265RF/KA3S1265RD
11
Package Dimensions
(Continued)
TO-3PF-5L(Forming)
Page 12
KA3S1265R/KA3S1265RF/KA3S1265RD
10/17/01 0.0m 001
Stock#DSxxxxxxxx
2001 Fairchild Semiconductor Corporation
LIFE SUPPORT POL I CY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein :
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support device or sys tem whose failure to perform can be reasonably expec ted to cause the failur e of the life support device or system, or to affect its safety or effec tiveness.
www.fairchildsemi.com
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREI N TO IMPROVE RELIABILITY, FUNCTION OR DES IGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RI GHTS OF OTHERS.
Ordering Information
TU : Non Forming Type YDTU : Forming Type
Product Number Package Rating Operating Temperature
KA3S1265R-YDTU TO-3P-5L
650V, 12A -25°C to +85°C
KA3S1265R-TU TO-3P-5L(Forming) KA3S1265RF-YDTU TO-3PF-5L
650V, 12A -25°C to +85°C
KA3S1265RF-TU TO-3PF-5L(Forming) KA3S1265RD-YDTU TO-3P-5L
650V, 12A -25°C to +85°C
KA3S1265RD-TU TO-3P-5L(Forming)
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