Datasheet SST270, SST271, J270, J271 Datasheet (Vishay)

J/SST270 Series

Vishay Siliconix

P-Channel JFETs

J270 SST270
J271 SST271

PRODUCT SUMMARY

Part Number V

J/SST270 0.5 to 2.0 30 6 –2
J/SST271 1.5 to 4.5 30 8 –6

FEATURES BENEFITS APPLICATIONS

D Low Cutoff Voltage: J270 <2 V
D High Input Impedance
D Very Low Noise
D High Gain

GS(off)

(V) V

(BR)GSS

Min (V) gfs Min (mS) I

Min (mA)

DSS

D Full Performance from Low-Voltage Power

Supply: Down to 2 V

D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality, Low-Level Signal Amplification

D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage Battery

Amplifiers

D Ultrahigh Input Impedance Pre-Amplifiers
D High-Side Switching

DESCRIPTION

The J/SST270 series consists of all-purpose amplifiers for
designs requiring p-channel operation.

The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package

TO-226AA

(TO-92)

D

G

S

1

2

3

Top View

J270
J271

provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).

TO-236

(SOT-23)

1

D

3

G

2

S

Top View

SST270 (S0)*
SST271 (S1)*

*Marking Code for TO-236

ABSOLUTE MAXIMUM RATINGS

Gate-Drain Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate-Source Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .

Document Number: 70258
S-04233—Rev. D, 02-Jul-01

Lead Temperature (
Power Dissipation

Notes
a. Derate 2.8 mW/_C above 25_C

1

/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .

a

350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

www.vishay.com

8-1

J/SST270 Series

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions TypaMin Max Min Max Unit

Static

Limits

J/SST270 J/SST271

Gate-Source Breakdown Voltage V
Gate-Source Cutoff Voltage V
Saturation Drain Current

b

(BR)GSS

GS(off)

I

DSS

IG = 1 mA , VDS = 0 V
VDS = –15 V, ID = –1 nA 0.5 2.0 1.5 4.5
VDS = –15 V, VGS = 0 V –2 –15 –6 –50 mA

45 30 30

V

VGS = 20 V, VDS = 0 V 10 200 200 pA

Gate Reverse Current I

Gate Operating Current I
Drain Cutoff Current I
Gate-Source Forward Voltage V

GSS

G

D(off)

GS(F)

TA = 125_C

5 nA
VDG = –15 V, ID = –1 mA 10
VDS = –15 V, VGS = 10 V –10

IG = –1 mA , VDS = 0 V –0.7 V

pA

Dynamic

Common-Source Forward Transconductance g
Common-Source Output Conductance g
Common-Source Input Capacitance C
Common-Source

Reverse Transfer Capacitance

Equivalent Input Noise Voltage e

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PSCIA
b. Pulse test: PW v300 ms duty cycle v3%.

fs

os

iss

C

rss

n

VDS = –15 V, VGS = 0 V

VDS = –15 V, VGS = 0 V

f = 1 kHz

VDS = –15 V, VGS = 0 V

f = 1 MHz

VDG = –10 V, VGS = 0 V

f = 1 kHz

6 15 8 18 mS

200 500

20

4

20

mS

pF

nV⁄

√Hz

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

200

160

120

80

– Drain-Source On-Resistance ( Ω )

40

DS(on)

r

0

0681042

www.vishay.com

8-2

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage

I

DSS

r

DS

rDS @ ID = –1 mA, VGS = 0 V

@ VDS = –15 V, VGS = 0 V

I

DSS

V

– Gate-Source Cutoff Voltage (V)

GS(off)

Forward Transconductance and Output Conductance

–100

I

DSS

–80

– Saturation Drain Current (mA)

–60

–40

–20

0

18

15

12

– Forward Transconductance (mS)

fs

g

vs. Gate-Source Cutoff Voltage

g

fs

g

os

9

6

gfs and gos @ VDS = –15 V

= 0 V, f = 1 kHz

V

GS

3

0

V

GS(off)

4

68102

– Gate-Source Cutoff Voltage (V)

250

200

150

100

50

0

g

os

– Output Conductance (µS)

Document Number: 70258

S-04233—Rev. D, 02-Jul-01

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Output Characteristics

VGS = 0 V

0.5 V

–1.6

–1.2

–2

Output Characteristics

VGS = 0 V

0.2 V

0.4 V

0.6 V

–2

–1.6

–1.2

J/SST270 Series

Vishay Siliconix

1.0 V

1.5 V

2.0 V

–0.8

– Drain Current (mA)

D

I

–0.4

0

0 –0.6 –0.8 –1

–25

V

GS(off)

–20

–15

–10

– Drain Current (mA)

D

I

–5

0

0 –12 –16 –20

–0.4–0.2

VDS – Drain-Source Voltage (V)

Output Characteristics

= 3 V

–8–4

VDS – Drain-Source Voltage (V)

Transfer Characteristics

–10

= 1.5 V

GS(off)

V

GS(off)

VDS = –15 VV

0.8 V

= 1.5 V

VGS = 0 V

0.5 V

1.0 V

1.5 V

2.0 V

–0.8

– Drain Current (mA)

D

I

–0.4

0

0 –0.3 –0.4 –0.5

30

24

18

12

Capacitance (pF)

6

0

01216820

–40

GS(off)

V

= 3 V

GS(off)

–0.2–0.1

VDS – Drain-Source Voltage (V)

Capacitance vs. Gate-Source Voltage

VDS = 0 V
f = 1 MHz

C

iss

C

rss

4

VGS – Gate-Source Voltage (V)

Transfer Characteristics

= 3 V

VDS = –15 VV

–8

–6

–4

– Drain Current (mA)

D

I

–2

0

0 0.2 0.4 0.6 0.8 1.0

Document Number: 70258
S-04233—Rev. D, 02-Jul-01

125_C

TA = –55_C

25_C

V

– Gate-Source Voltage (V)

GS

–32

–24

–16

– Drain Current (mA)

D

I

–8

TA = –55_C

125_C

0

012345

25_C

VGS – Gate-Source Voltage (V)

www.vishay.com

8-3

J/SST270 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

100

Transconductance vs. Drain Current Output Conductance vs. Drain Current

V

= 3 V

GS(off)

10

– Forward Transconductance (mS)

fs

g

1

–0.1 –1 –10

250

TA = 25_C

200

V

GS(off)

150

100

– Drain-Source On-Resistance ( Ω )

50

DS(on)

r

0

–1 –10 –100

100

25_C

– Drain Current (mA) ID – Drain Current (mA)

I

D

On-Resistance vs. Drain Current

= 1.5 V

3 V

ID – Drain Current (mA)

Noise Voltage vs. Frequency

VDS = –15 V
f = kHz

TA = –55_C

125_C

5 V

100

V

= 3 V

GS(off)

TA = –55_C

10

– Output Conductance (µS)

os

g

1

–0.1 –1 –10

300

240

180

120

60

– Drain-Source On-Resistance ( Ω )

DS(on)

r

0

–55 25 125

100 nA

On-Resistance vs. Temperature

ID = –1 mA
r

changes X 0.7%/_C

DS

V

= 1.5 V

GS(off)

–15 85

–35 5 45 65 105

TA – Temperature (_C)

Gate Leakage Current

25_C

VDS = –15 V
f = kHz

3 V

125_C

5 V

10

n – Noise Voltage nV / Hz

e

1

www.vishay.com

8-4

ID = –0.1 mA

–1 mA

VDS = –10 V

10 100 1 k 100 k10 k

f – Frequency (Hz)

10 nA

1 nA

100 pA

– Gate Leakage

10 pA

G

I

1 pA

0.1 pA
0 –40–20–10 –50

–1 mA

TA = 125_C

–10 mA

TA = 25_C

VDG – Drain-Gate Voltage (V)

–1 mA

ID = –10 mA

I

@ 125_C

GSS

I

@ 25_C

GSS

–30

Document Number: 70258

S-04233—Rev. D, 02-Jul-01