Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
J210; J211; J212
N-channel field-effect transistors
Product specification
File under Discrete Semiconductors, SC07
1997 Dec 01
Page 2
Philips Semiconductors Product specification
N-channel field-effect transistors J210; J211; J212
FEATURES
• High speed switching
• Interchangeability of drain and source connections
• High impedance.
APPLICATIONS
• Analog switches
• Choppers, multiplexers and commutators
• Audio amplifiers.
DESCRIPTION
N-channel symmetrical junction field-effect transistor in a
TO-92 (SOT54) package.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
PINNING - TO-92 (SOT54)
PIN SYMBOL DESCRIPTION
1 g gate
2 s source
3 d drain
handbook, halfpage
Marking codes:
J210: J210.
J211: J211.
J212: J212.
1
2
3
g
MAM197
Fig.1 Simplified outline and symbol.
d
s
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
DS
GSoff
drain-source voltage −±25 V
gate-source cut-off voltage ID= 1 nA; VDS=15V
J210 −1 −3V
J211 −2.5 −4.5 V
J212 −4 −6V
I
DSS
drain current VGS= 0; VDS=15V
J210 2 15 mA
J211 7 20 mA
J212 15 40 mA
P
tot
y
common-source transfer admittance VGS= 0; VDS=15V
fs
total power dissipation T
≤ 50 °C − 400 mW
amb
J210 4 12 mS
J211 6 12 mS
J212 7 12 mS
1997 Dec 01 2
Page 3
Philips Semiconductors Product specification
N-channel field-effect transistors
J210; J211; J212
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
DS
GSO
DGO
G
tot
stg
j
drain-source voltage −±25 V
gate-source voltage open drain −−25 V
drain-gate voltage open source −−25 V
forward gate current (DC) − 10 mA
total power dissipation T
≤ 50 °C; note 1; see Fig.13 − 400 mW
amb
storage temperature −65 150 °C
operating junction temperature − 150 °C
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient; note 1 250 K/W
2
.
Note
1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm
2
.
1997 Dec 01 3
Page 4
Philips Semiconductors Product specification
N-channel field-effect transistors
J210; J211; J212
STATIC CHARACTERISTICS
T
=25°C.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)GSS
V
GSoff
gate-source breakdown voltage IG= −1 µA; VDS=0 −−25 V
gate-source cut-off voltage ID= 1 nA; VDS=15V
J210 −1 −3V
J211 −2.5 −4.5 V
J212 −4 −6V
V
GSS
I
DSS
gate-source forward voltage IG= 0; VDS=0 − 1V
drain current VGS= 0; VDS=15V
J10 2 15 mA
J11 7 20 mA
J12 15 40 mA
I
GSS
y
common-source transfer admittance VGS= 0; VDS=15V
fs
reverse gate leakage current VGS= −15 V; VDS=0 −−100 pA
J210 4 12 mS
J211 6 12 mS
J212 7 12 mS
y
common source output admittance VGS= 0; VDS=15V
os
J210 − 150 µS
J211 − 200 µS
J212 − 200 µS
DYNAMIC CHARACTERISTICS
T
=25°C.
amb
SYMBOL PARAMETER CONDITIONS TYP. UNIT
C
is
C
os
C
rs
g
is
g
fs
g
rs
g
os
V
n
input capacitance VDS=15V; VGS= −10 V; f = 1 MHz 2 pF
V
=15V; VGS= 0; f = 1 MHz 4 pF
DS
output capacitance VDS=15V; VGS= −10 V; f = 1 MHz 0.8 pF
V
=15V; VGS= 0; f = 1 MHz 2 pF
DS
feedback capacitance VDS=15V; VGS= −10 V; f = 1 MHz 0.8 pF
V
=15V; VGS= 0; f = 1 MHz 0.9 pF
DS
common source input conductance VDS=15V; VGS= 0; f = 100 MHz 70 µS
V
=15V; VGS= 0; f = 450 MHz 1.1 mS
DS
common source transfer conductance VDS=15V; VGS= 0; f = 100 MHz 7.5 mS
=15V; VGS= 0; f = 450 MHz 7.5 mS
V
DS
common source feedback conductance VDS=15V; VGS= 0; f = 100 MHz −8 µS
V
=15V; VGS= 0; f = 450 MHz −90 µS
DS
common source output conductance VDS=15V; VGS= 0; f = 100 MHz 95 µS
V
=15V; VGS= 0; f = 450 MHz 200 µS
DS
equivalent input noise voltage VDS=15V; VGS= 0; f = 1 kHz 5 nV/√Hz
1997 Dec 01 4
Page 5
Philips Semiconductors Product specification
N-channel field-effect transistors
V
GSoff
MGM277
(V)
40
handbook, halfpage
I
DSS
(mA)
30
20
10
0
0 −2 −4 −6
VDS= 15V; Tj=25°C.
Fig.2 Drain current as a function of gate-source
cut-off voltage; typical values.
J210; J211; J212
V
GSoff
MGM278
(V)
12
handbook, halfpage
y
fs
(mS)
8
4
0
0 −2 −4 −6
VDS= 15 V; Tj=25°C.
Fig.3 Common-source transfer admittance as a
function of gate-source cut-off voltage;
typical values.
V
GSoff
MGM279
(V)
80
handbook, halfpage
g
os
(µS)
60
40
20
0
0 −2 −4 −6
VDS= 15 V; T
amb
=25°C.
Fig.4 Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
handbook, halfpage
8
I
D
(mA)
6
4
2
−1.4 V
0
010
J210.
Tj=25°C.
2468
Fig.5 Output characteristics; typical values.
MGM280
VGS = 0 V
−200 mV
−400 mV
−600 mV
−800 mV
−1 V
−1.2 V
VDS (V)
1997 Dec 01 5
Page 6
Philips Semiconductors Product specification
N-channel field-effect transistors
handbook, halfpage
8
I
D
(mA)
6
4
2
0
−2.5 0−0.5
J210.
VDS= 10 V; Tj=25°C.
−1.5 −1−2
MGM281
VGS (V)
20
handbook, halfpage
I
D
(mA)
16
12
8
4
0
010
J211.
Tj=25°C.
J210; J211; J212
MGM282
VGS = 0 V
−200 mV
−400 mV
−600 mV
−800 mV
−1 V
−1.2 V
−1.4 V
2468
VDS (V)
Fig.6 Input characteristics; typical values.
20
handbook, halfpage
I
D
(mA)
16
12
8
4
0
−6 −4 −20
J211.
VDS= 10 V; Tj=25°C.
MGM283
VGS (V)
Fig.7 Output characteristics; typical values.
24
handbook, halfpage
I
D
(mA)
16
8
0
010
J212.
Tj=25°C.
2468
MGM284
VGS = 0 V
−200 mV
−400 mV
−600 mV
−800 mV
−1 V
−1.2 V
−1.4 V
VDS (V)
Fig.8 Input characteristics; typical values.
1997 Dec 01 6
Fig.9 Output characteristics; typical values.
Page 7
Philips Semiconductors Product specification
N-channel field-effect transistors
24
handbook, halfpage
I
D
(mA)
16
8
0
−6 −4 −20
J212.
VDS= 10 V; Tj=25°C.
Fig.10 Input characteristics; typical values.
MGM285
VGS (V)
J210; J211; J212
handbook, halfpage
2
C
rs
(pF)
1.5
1
0.5
0
−10 0−2
VDS= 15 V; f = 1 Mhz; T
amb
−6 −4−8
=25°C.
Fig.11 Feedback capacitance as a function of
gate-source voltage; typical values.
MGM286
VGS (V)
handbook, halfpage
5
C
is
(pF)
4
3
2
1
0
−10 0
VDS= 15 V; f = 1 Mhz; T
−8 −6 −4 −2
=25°C.
amb
Fig.12 Input capacitance as a function of
gate-source voltage; typical values.
MGM287
VGS (V)
500
handbook, halfpage
P
tot
(mW)
400
300
200
100
0
0 50 100 150
T
amb
Fig.13 Power derating curve.
MGM290
(°C)
1997 Dec 01 7
Page 8
Philips Semiconductors Product specification
N-channel field-effect transistors
3
10
handbook, halfpage
I
D
(µA)
2
10
10
1
−1
10
−2
10
−3
10
−4
10
MGM289
5
−10
handbook, halfpage
I
G
(pA)
4
−10
3
−10
2
−10
−10
−1
−1
−10
J210; J211; J212
MGM288
ID = 10 mA
1 mA
0.1 mA
I
GSS
201681240
VDG (V)
−5
10
VGS (V)
VDS= 15 V; Tj=25°C.
0−2 −1−3−4
Fig.14 Drain current as a function of gate-source
voltage; typical values.
Tj=25°C.
Fig.15 Gate current as a function of drain-gate
voltage; typical values.
1997 Dec 01 8
Page 9
Philips Semiconductors Product specification
N-channel field-effect transistors
f (MHz)
MGM291
10
2
10
handbook, halfpage
y
is
(mS)
10
1
−1
10
−2
10
10 10
VDS= 15 V; VGS= 0; T
amb
=25°C.
b
is
g
is
2
J210; J211; J212
f (MHz)
MGM292
3
10
2
10
handbook, halfpage
y
fs
(mS)
10
3
1
10 10
VDS= 15 V; VGS= 0; T
amb
=25°C.
g
fs
−b
fs
2
Fig.16 Common source input admittance as a
function of frequency; typical values.
10
handbook, halfpage
y
rs
(mS)
1
−1
10
−2
10
−3
10
10 10
−b
rs
−g
rs
2
f (MHz)
MGM293
Fig.17 Common source transfer admittance as
a function of frequency; typical values.
f (MHz)
MGM294
3
10
10
handbook, halfpage
y
os
(mS)
b
1
−1
10
−2
3
10
10
10 10
os
g
os
2
VDS= 15 V; VGS= 0; T
amb
=25°C.
Fig.18 Common source reverse admittance as
a function of frequency; typical values.
1997 Dec 01 9
VDS= 15 V; VGS= 0; T
amb
=25°C.
Fig.19 Common source output admittance as
a function of frequency; typical values.
Page 10
Philips Semiconductors Product specification
N-channel field-effect transistors
J210; J211; J212
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT54
c
E
d
1
D
2
A L
b
e
1
e
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
A
5.2
mm
5.0
OUTLINE
VERSION
SOT54 TO-92 SC-43
b
0.48
0.40
b
c
D
d
1
0.66
0.45
0.40
4.8
4.4
0.56
IEC JEDEC EIAJ
E
1.7
4.2
1.4
3.6
REFERENCES
2.54
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
2.5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1997 Dec 01 10
Page 11
Philips Semiconductors Product specification
N-channel field-effect transistors
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
J210; J211; J212
1997 Dec 01 11
Page 12
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© Philips Electronics N.V. 1997 SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 117067/00/01/pp12 Date of release: 1997 Dec01 Document order number: 9397 750 02789
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