Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
J174; J175;
J176; J177
P-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
April 1995
Page 2
Philips Semiconductors Product specification
P-channel silicon field-effect transistors
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in a plastic TO-92
envelope and intended for application
with analog switches, choppers,
commutators etc.
A special feature is the
interchangeability of the drain and
source connections.
PINNING
1 = source
2 = gate
3 = drain
Note: Drain and source are
interchangeable.
handbook, halfpage
Fig.1 Simplified outline and symbol, TO-92.
J174; J175;
J176; J177
1
2
3
g
MAM388
d
s
QUICK REFERENCE DATA
Drain-source voltage ± V
Gate-source voltage V
Gate current −I
Total power dissipation
up to T
=50°CP
amb
Drain current
−V
= 15 V; VGS=0 −I
DS
Drain-source ON-resistance
= 0.1 V; VGS=0 R
−V
DS
DS
GSO
G
tot
DSS
DS on
max. 30 V
max. 30 V
max. 50 mA
max. 400 mW
J174 J175 J176 J177
min.
max.
20
135
70
7
35
2
1.520mA
mA
max. 85 125 250 300 Ω
April 1995 2
Page 3
Philips Semiconductors Product specification
P-channel silicon field-effect transistors
J174; J175;
J176; J177
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage ± V
Gate-source voltage V
Gate-drain voltage V
Gate current (DC) −I
DS
GSO
GDO
G
Total power dissipation
up to T
Storage temperature range T
Junction temperature T
=50°CP
amb
tot
stg
j
THERMAL RESISTANCE
From junction to ambient in free air R
th j-a
STATIC CHARACTERISTICS
Tj=25°C unless otherwise specified J174 J175 J176 J177
Gate cut-off current
V
= 20 V; VDS=0 I
GS
GSS
Drain cut-off current
−V
= 15 V; VGS= 10 V −I
DS
DSX
Drain current
−V
= 15 V; VGS= 10 V −I
DS
DSS
Gate-source breakdown voltage
I
=1µA; VDS=0 V
G
(BR)GSS
Gate-source cut-off voltage
−I
= 10 nA; VDS= −15 V V
D
GS off
Drain-source ON-resistance
−V
= 0.1 V; VGS=0 R
DS
DSon
max. 30 V
max. 30 V
max. 30 V
max. 50 mA
max. 400 mW
−65 to +150 °C
max. 150 °C
= 250 K/W
max. 1 1 1 1 nA
max. 1 1 1 1 nA
min. 20 7 2 1.5 mA
max. 135 70 35 20 mA
min. 30 30 30 30 V
min. 5 3 1 0.8 V
max. 10 6 4 2.25 V
max. 85 125 250 300 Ω
April 1995 3
Page 4
Philips Semiconductors Product specification
P-channel silicon field-effect transistors
J174; J175;
J176; J177
DYNAMIC CHARACTERISTICS
T
=25°C unless otherwise specified
j
Input capacitance, f = 1 MHz
V
= 10 V; VDS=0V C
GS
V
GS=VDS
=0 C
is
is
Feedback capacitance, f = 1 MHz
V
= 10 V; VDS=0V C
GS
rs
Switching times (see Fig.2 + 3) J174 J175 J176 J177
Delay time t
Rise time t
Turn-on time t
Storage time t
Fall time t
Turn-off time
Test conditions: −V
d
r
on
s
f
t
off
V
R
V
DD
GS off
L
GS on
typ. 8 pF
typ. 30 pF
typ. 4 pF
typ. 2 5 15 20 ns
typ. 5 10 20 25 ns
typ. 7 15 35 45 ns
typ. 5 10 15 20 ns
typ. 10 20 20 25 ns
typ. 15 30 35 45 ns
10 6 6 6 V
12 8 6 3 V
560 1200 2000 2900 Ω
00 00V
50 Ω
−V
DD
50 Ω
R
L
D.U.T
MBK292
V
out
handbook, halfpage
V
in
Fig.2 Switching times test circuit.
April 1995 4
V
GSoff
INPUT
10%
10%
OUTPUT
90%
t
f
t
s
Fig.3 Input and output waveforms;
td+ tr=ton;ts+tf=t
90%
10%
90%
t
r
t
d
.
off
MBK293
Page 5
Philips Semiconductors Product specification
P-channel silicon field-effect transistors
J174; J175;
J176; J177
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT54
c
E
d
1
D
2
A L
b
e
1
e
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
A
5.2
mm
5.0
OUTLINE
VERSION
SOT54 TO-92 SC-43
b
0.48
0.40
b
c
D
d
1
0.66
0.45
0.40
4.8
4.4
0.56
IEC JEDEC EIAJ
E
1.7
4.2
1.4
3.6
REFERENCES
2.54
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
2.5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
April 1995 5
Page 6
Philips Semiconductors Product specification
P-channel silicon field-effect transistors
J174; J175;
J176; J177
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Short-form specification The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995 6
Loading...