Datasheet J113, J111, J112 Datasheet (Philips)

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DISCRETE SEMICONDUCTORS

DATA SH EET

J111; J112; J113

N-channel silicon field-effect transistors

Product speciﬁcation File under Discrete Semiconductors, SC07

July 1993

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Philips Semiconductors Product speciﬁcation

N-channel silicon ﬁeld-effect transistors J111; J112; J113

DESCRIPTION

Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.

FEATURES

• High speed switching

• Interchangeability of drain and

source connections

• Low R

at zero gate voltage

DS on

PINNING

1 = gate 2 = source 3 = drain

Note: Drain and source are interchangeable.

QUICK REFERENCE DATA

Drain-source voltage ±V Drain current

VDS= 15 V; VGS=0 I

Total power dissipation

up to T

=50°CP

amb

Gate-source cut-off voltage

= 5 V; ID=1µA −V

handbook, halfpage

MAM042

Fig.1 Simplified outline and symbol, TO-92.

J111 J112 J113

DSS

tot

GS off

max. 40 40 40 V

min. 20 5 2 mA

max. 400 400 400 mW

min. max.

1 5

d s

0.53V V

Drain-source on-state resistance

= 0.1 V; VGS=0 R

DS on

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max. 30 50 100 Ω

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Philips Semiconductors Product speciﬁcation

N-channel silicon ﬁeld-effect transistors J111; J112; J113

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage ±V Gate-source voltage −V Gate-drain voltage −V Gate forward current (DC) I Total power dissipation

up to T

=50°CP

amb

Storage temperature range T Junction temperature T

THERMAL RESISTANCE

DS GSO GDO

tot stg j

max. 40 V max. 40 V max. 40 V max. 50 mA

max. 400 mW

−65 to + 150 °C

max. 150 °C

From junction to ambient in free air R

STATIC CHARACTERISTICS

=25°C unless otherwise speciﬁed

Gate reverse current

= 15 V; VDS=0 −I

−V

GSS

Drain cut-off current

VDS=5 V;−VGS= 10 V −I

DSX

Drain saturation current

= 15 V; VGS=0 I

DSS

Gate-source breakdown voltage

−I

=1µA; VDS=0 −V

(BR)GSS

Gate-source cut-off voltage

= 5 V; ID=1µA −V

GS off

Drain-source on-state resistance

= 0.1 V; VGS=0 R

DSon

th j-a

= 250 K/W

J111 J112 J113

max. 1 1 1 nA

min. 20 5 2 mA

min. 40 40 40 V

min. 3 1 0.5 V max. 10 5 3 V

max. 30 50 100 Ω

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Philips Semiconductors Product speciﬁcation

N-channel silicon ﬁeld-effect transistors J111; J112; J113

DYNAMIC CHARACTERISTICS

=25°C unless otherwise speciﬁed

Input capacitance

=0;−VGS= 10 V; f = 1 MHz C

= −VGS= 0; f = 1 MHz C

Feedback capacitance

=0;−VGS= 10 V; f = 1 MHz C

Switching times

test conditions

= 10 V; VGS= 0 to V

−V

= 12 V; RL= 750 Ω for J111

GS off

= 7 V; RL= 1550 Ω for J112

GS off

= 5 V; RL= 3150 Ω for J113

GS off

GSoff

Rise time t Turn-on time t Fall time t Turn-off time t

r on f off

typ. 6 pF typ. 22 pF max. 28 pF

typ. 3 pF

typ. 6 ns typ. 13 ns typ. 15 ns typ. 35 ns

k, halfpage

10 nF

50 Ω

10 µF

50 Ω

Fig.2 Switching times test circuit.

DUT

1 µF

SAMPLING

SCOPE

50 Ω

MBK289

VGS = 0 V

GS off

10%

90%

off

90%

10%

Fig.3 Input and output waveforms.

MBK288

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Philips Semiconductors Product speciﬁcation

N-channel silicon ﬁeld-effect transistors J111; J112; J113

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

A L

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

5.2

5.0

OUTLINE VERSION

SOT54 TO-92 SC-43

0.48

0.40

0.66

0.45

0.40

4.8

4.4

0.56

IEC JEDEC EIAJ

1.7

4.2

1.4

3.6

REFERENCES

2.54

1.27

14.5

12.7

(1)

2.5

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

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Philips Semiconductors Product speciﬁcation

N-channel silicon ﬁeld-effect transistors J111; J112; J113

DEFINITIONS

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Short-form speciﬁcation The data in this speciﬁcation is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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