Page 1
01/99 B-51
J111, J112, J113
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 35 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ111, SMPJ112, SMPJ113
At 25°C free air temperature
J111 J112 J113 Process NJ132
Static Electrical Characteristics
Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 35 – 35 – 35 V IG= – 1µA, VDS= ØV
Gate Reverse Current I
GSS
– 1– 1– 1nAV
GS
= – 15V, VDS= ØV
Gate Source Cutoff Voltage V
GS(OFF)
– 3 – 10 – 1 – 5 – 3 V VDS= 5V, ID= 1 µA
Drain Saturation Current (Pulsed) I
DSS
20 5 2 mA VDS= 15V, VGS= ØV
Drain Cutoff Current I
D(OFF)
– 1– 1– 1nAV
DS
= 15V, VGS= – 10V
Dynamic Electrical Characteristics
Drain Source ON Resistance r
ds(on)
30 50 100 Ω VGS= ØV, VDS= 0.1V f = 1 kHz
Drain Gate Capacitance C
dg
555pFV
DS
= ØV, VGS= – 10V f = 1 MHz
Source Gate Capacitance C
gs
555pFV
DS
= ØV, VGS= – 10V f = 1 MHz
Drain Gate + Source Gate Capacitance C
gd
+ C
gs
28 28 28 pF VDS= VGS= ØV f = 1 MHz
Switching Characteristics Typ Typ Typ
Turn ON Delay Time t
d(on)
777ns J111 J112 J113
Rise Time t
r
662nsVDD10 10 10 V
Turn OFF Delay Time t
d(off)
20 20 20 ns V
GS(OFF)
– 12 – 7 – 5 V
Fall Time t
f
15 15 15 ns R
L
800 1600 3200 Ω
¥ Choppers
¥ Commutators
¥ Analog Switches
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-51
Loading...