Page 1
B-50 01/99
J110, J110A
N-Channel Silicon Junction Field-Effect Transistor
¥ Choppers
¥ Commutators
¥ Analog Switches
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ110, SMPJ110A
At 25°C free air temperature: J110 J110A Process NJ450
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 25 – 25 V IG= – 1 µA, VDS= ØV
Gate Reverse Current I
GSS
– 3 – 3 nA VGS= – 15V, VDS= ØV
Gate Source Cutoff Voltage V
GS(OFF)
– 0.5 – 4 – 0.5 – 4 V VDS= 5V, ID= 1 µA
Drain Saturation Current (Pulsed) I
DSS
10 10 mA VDS= 15V, VGS= ØV
Drain Cutoff Current I
D(OFF)
33nAV
DS
= 5V, VGS= – 10V
Dynamic Electrical Characteristics
Drain Source ON Resistance r
ds(on)
18 25 Ω VGS= Ø, VDS< = 0.1V f = 1 kHz
Drain Gate Capacitance C
gd
15 15 pF VDS= ØV, VGS= – 10V f = 1 MHz
Source Gate Capacitance C
gs
15 15 pF VDS= ØV, VGS= – 10V f = 1 MHz
Drain Gate + Source Gate Capacitance Cgd+ C
gs
85 85 pF VDS= VGS= ØV f = 1 MHz
Switching Characteristics Typ Typ
Turn ON Delay Time td
(on)
44ns J110 J110A
Rise Time t
r
11nsVDD1.5 1.5 V
Turn OFF Delay Time td
(off)
66ns
V
GS(OFF)
– 5 – 5 V
Fall Time t
f
30 30 ns
R
L
150 150 Ω
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-50
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