Datasheet J110, J108, J109 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

J108; J109; J110

N-channel silicon junction FETs

Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07

1996 Jul 30

Philips Semiconductors Product specification

N-channel silicon junction FETs J108; J109; J110

FEATURES

• High speed switching

• Interchangeability of drain and source connections

• Low R

at zero gate voltage (<8 Ω for J108).

DSon

PINNING - TO-92

PIN SYMBOL DESCRIPTION

1 g gate
2 s source
3 d drain

APPLICATIONS

• Analog switches

• Choppers and commutators.

DESCRIPTION

handbook, halfpage

1

2

3

g

N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.

MAM197

CAUTION

The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V

DS
GSoff

drain-source voltage −±25 V
gate-source cut-off voltage ID=1µA; VDS=5V

J108 −3 −10 V
J109 −2 −6V
J110 −0.5 −4V

I

DSS

drain current VGS= 0; VDS=5V

J108 80 − mA
J109 40 − mA
J110 10 − mA

P

tot

total power dissipation up to T

=50°C − 400 mW

amb

d
s

1996 Jul 30 2

Philips Semiconductors Product specification

N-channel silicon junction FETs J108; J109; J110

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

GSO

V

GDO

I

G

P

tot

T

stg

T

j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

drain-source voltage −±25 V
gate-source voltage open drain −−25 V
gate-drain voltage open source −−25 V
forward gate current (DC) − 50 mA
total power dissipation up to T

=50°C − 400 mW

amb

storage temperature −65 150 °C
operating junction temperature − 150 °C

thermal resistance from junction to ambient 250 K/W

STATIC CHARACTERISTICS

T

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)GSS

V

GSoff

gate-source breakdown voltage IG= −1 µA; VDS=0 −−−25 V
gate-source cut-off voltage ID=1µA; VDS=5V V

J108 −3 −−10 V
J109 −2 −−6V
J110 −0.5 −−4V

I

DSS

drain current VGS= 0; VDS=15V

J108 80 −−mA
J109 40 −−mA
J110 10 −−mA

I

GSS

I

DSX

R

DSon

gate leakage current VGS= −15 V; VDS=0 −−−3nA
drain-source cut-off current VGS= −10 V; VDS=5V −−3nA
drain-source on-state resistance VGS= 0; VDS= 100 mV

J108 −−8Ω
J109 −−12 Ω
J110 −−18 Ω

1996 Jul 30 3

Philips Semiconductors Product specification

N-channel silicon junction FETs J108; J109; J110

DYNAMIC CHARACTERISTICS

T

=25°C; unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

C

is

C

rs

Switching times; see Fig.2
t

d

t

on

t

s

t

off

Note

1. Test conditions for switching times are as follows:
V

DD

V

GSoff

V

GSoff

V

GSoff

input capacitance VDS= 0; VGS= −10 V; f = 1 MHz 15 30 pF

= 0; VGS= 0; f = 1 MHz;

V

DS

T

=25°C

amb

50 85 pF

reverse transfer capacitance VDS= 0; VGS= −10 V; f = 1 MHz 8 15 pF

delay time note 1 2 − ns
turn-on time 4 − ns
storage time 4 − ns
turn-off time 6 − ns

= 1.5 V; VGS= 0 to V

GSoff

(all types)
= −12 V; RL= 100 Ω (J108)
= −7 V; RL= 100 Ω (J109)
= −5 V; RL= 100 Ω (J110).

R

DUT

0.1 µF

L

SAMPLING

SCOPE

50 Ω

MGE773

handbook, halfpage

V

DD

10 nF

50 Ω

10 µF

50 Ω

Fig.2 Switching circuit.

1996 Jul 30 4

Philips Semiconductors Product specification

N-channel silicon junction FETs J108; J109; J110

handbook, full pagewidth

VGS = 0 V

V

i

V

GS off

V

o

10%

90%

t

off

t

t

s

f

90%

10%

Fig.3 Input and output waveforms.

t

on

t

t

d

r

MGE774

1996 Jul 30 5

Philips Semiconductors Product specification

N-channel silicon junction FETs J108; J109; J110

PACKAGE OUTLINE

ndbook, full pagewidth

0.40
min

4.2 max

1.7

1.4

5.2 max 12.7 min

1

4.8

2.54

max

Dimensions in mm.
(1) Terminal dimensions in this zone are uncontrolled.

2
3

0.66

0.56

Fig.4 TO-92 (SOT54).

2.0 max

0.48

0.40

(1)

MBC014 - 1

1996 Jul 30 6

Philips Semiconductors Product specification

N-channel silicon junction FETs J108; J109; J110

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Jul 30 7