Datasheet IXSX35N120AU1 Datasheet (IXYS)

High Voltage IXSX 35N120AU1 IGBT with Diode

Combi Pack Short Circuit SOA Capability

V

CES

I

C25

V

CE(SAT)

= 1200 V = 70 A = 4 V

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V (RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V

t

SC

(SCSOA) RG = 22 W, non repetitive P

C

T

J

T

JM

T

stg

T

L

TJ= 25°C to 150°C 1200 V TJ= 25°C to 150°C; RGE = 1 MW 1200 V

Continuous ±20 V Transient ±30 V

TC= 25°C70A TC= 90°C35A TC= 25°C, 1 ms 140 A

= 15 V, TJ = 125°C, RG = 22 W ICM = 70 A

GE

CES

VGE= 15 V, VCE = 720 V, TJ = 125°C 10ms

TC= 25°C IGBT 300 W

Diode 190 W

-55 ... +150 °C 150 °C

-55 ... +150 °C

1.6 mm (0.063 in) from case for 10 s 300 °C

Weight TO-247 HL 6 g

PLUS TO-247

TM

(IXSX35N120AU1)

G

C

E

G = Gate, C = Collector, E = Emitter, TAB = Collector

C (TAB)

Features

• Hole-less TO-247 package for clip mounting

• High frequency IGBT and anti-parallel FRED in one package

• Low V

CE(sat)

- for minimum on-state conduction

losses

• MOS Gate turn-on

- drive simplicity

• Fast Recovery Epitaxial Diode (FRED)

- soft recovery with low I

RM

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

V

GE(th)

I

 VCE= 0.8 • V

CES

I

GES

V

CE(sat)

IXYS reserves the right to change limits, test conditions, and dimensions.

IC= 5 mA, VGE = 0 V 1200 V IC= 4 mA, VCE = V

VGE= 0 V TJ = 125°C15mA

CES

GE

TJ = 25°C 750 mA

48V

VCE= 0 V, VGE = ±20 V ±100 nA IC= I

, VGE = 15 V 4 V

C90

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode

power supplies

Advantages

• Space savings (two devices in one

package)

• Reduces assembly time and cost

• High power density

97514D (7/00)

1 - 5

IXSX 35N120AU1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

fs

IC= I

; VCE = 10 V, 20 26 S

C90

Pulse test, t £ 300 ms, duty cycle £ 2 %

I

C C C

Q Q Q

t

t t t E

t t E t t E

C(on)

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

VGE = 15 V, VCE = 10 V 170 A

3900 pF

VCE = 25 V, VGE = 0 V, f = 1 MHz 295 pF

60 pF

150 190 nC

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

CES

40 60 nC 70 100 nC

Inductive load, TJ = 25°C

I

= I

, VGE = 15 V,

C

C90

L = 100 mH, VCE = 0.8 V Switching times may increase for V (Clamp) > 0.8 • V increased R

CES

G

, RG = 2.7 W

CES

, higher TJ or

Inductive load, TJ = 125°C

I

= I

, VGE = 15 V,

C

C90

L = 100 mH, VCE = 0.8 V Switching times may increase for V (Clamp) > 0.8 • V increased R

CES

G

, RG = 2.7 W

CES

, higher TJ or

CE

80 ns 150 ns 400 900 ns 500 700 ns

10 mJ

80 ns 150 ns

8mJ 400 ns 700 ns

15 mJ

PLUS247TM (IXSX)

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

2.29 2.54 .090 .100

A

1

A21.91 2.16 .075 .085 b 1.14 1.40 .045 .055

b

1.91 2.13 .075 .084

1

b22.92 3.12 .115 .123 C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 .244 R 4.32 4.83 .170 .190

R

thJC

R

thCK

0.15 K/W

0.42 K/W

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

I

RM

t

rr

R

thJC

IF = I

, VGE = 0 V, Pulse test, 2.35 V

C90

t £ 300 ms, duty cycle d £ 2 %, TJ = 125°C IF = I

, VGE = 0 V, -diF/dt = 480 A/ms3236A

C90

VR = 540 V TJ = 100°C 225 ns IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ =25°C4060ns

0.65 K/W

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

2 - 5

IXSX 35N120AU1

Fig.1 Saturation Characteristics Fig.2 Output Characterstics

70 60 50 40

TJ = 25°C

VGE =15V

13V

11V

250

TJ = 25°C

200

150

VGE = 15V

13V

30

- Amperes

C

I

20 10

0

012345

VCE - Volts

9V

7V

100

- Amperes

C

I

50

0

02468101214161820

VCE - Volts

Fig.3 Collector-Emitter Voltage Fig.4 Temperature Dependence

vs. Gate-Emitter Voltage of Output Saturation Voltage

10

9

TJ = 25°C

8 7 6

I

- Volts V

5

CE

4 3 2

= 70A

C

I

= 35A

C

I

= 17.5A

C

1 0

8 9 10 11 12 13 14 15

1.4

VGE=15V

1.3

1.2

1.1

1.0

- Normalized

0.9

CE(sat)

V

0.8

0.7

-50 -25 0 25 50 75 100 125 150

= 70A

I

C

I

= 35A

C

IC =1 7.5A

11V

9V 7V

VGE - Volts

TJ - Degrees C

Fig.5 Input Admittance Fig.6 Temperature Dependence of

Breakdown and Threshold Voltage

50

VCE = 10V

40

30

20

- Amperes

C

I

10

= 125°C

T

J

T

= 25°C

J

TJ = - 40C

0

4 5 6 7 8 9 10 11 12 13 14 15

VGE - Volts

1.3

- Normalized

BV / V

1.2

1.1

1.0

GE(th)

0.9

0.8

V

GE(th)

IC = 4mA

BV

CES

IC = 3mA

0.7

-50 -25 0 25 50 75 100 125 150

TJ - Degrees C

3 - 5

Fig.7 Turn-Off Energy per Pulse and Fig.8 Dependence of Turn-Off Energy

Z

K/W

1250

1000

750

- nanoseconds

fi

t

500

IXSX 35N120AU1

Fall Time on Collector Current Per Pulse and Fall Time on R

= 125°C

T

J

R

= 10

G

25



20

t

fi

E

off

15

10

- millijoules

off

E

1250

1000

750

- nanoseconds

fi

t

500

TJ = 125°C I

= 35A

C

t

fi

E

off

G

18

17

16

- millijoules

off

E

15

250

0 10203040506070

IC - Amper es

5

250

0 1020304050

RG - Ohms

Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area

15

IC = 35A V

= 500V

CE

12

9

- Volts

GE

6

V

3

0

0 50 100 150 200

QG - nanocoulombs

- Amperes I

100

TJ = 125°C

10

R

= 2.7



G

dV/dt < 5V/ns

1

C

0.1

0.01 0 200 400 600 800 1000 1200

VCE - Volts

Fig.11 Transient Thermal Impedance

1

14

D=0.5

D=0.2

0.1

D=0.1

0.01

D=0.05 D=0.02

D=0.01

Single Pulse

D = Duty Cycle

-

thjJC

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

4 - 5

IXSX 35N120AU1

Fig.12 Maximum Forward Voltage Drop Fig.13 Peak Forward Voltage VFR and

Forward Recovery Time t

90 80 70 60 50

T

= 100°C

40 30

Curren t - Amper es

20 10

J

TJ = 150°C

TJ = 25°C

0

0123

60

T

= 125°C

J

I

50

= 60A

F

40

30

- Volts

FR

V

20

10

0

0 200 400 600 800 1000

FR

1200

V

FR

1000

800

600

400

- nanoseconds

fr

tfr

t

200

0

Voltage Drop - Volts

Fig.14 Junction Temperature Dependence Fig.15 Reverse Recovery Chargee

off IRM and Q

1.4

1.2

r

1.0

/ Q

RM

0.8

0.6

0.4

Normalized I

0.2

0.0 04080120160

I

RM

Q

r

TJ - Degrees C

r

Fig.16 Peak Reverse Recovery Current Fig.17 Reverse Recovery Time

- Amperes

RM

I

80

60

40

20

TJ = 100°C V

= 540V

R

max. I

= 60A

F

typ. I

= 120A

F

I

= 60A

F

I

= 30A

F

diF /dt - A/µs

12

TJ = 100°C V

= 540V

10

R

8

typ. I

= 120A

F

I

= 60A

F

I

= 30A

F

coulombs

m

Q

6

r

4

2

0

10 100 1000

diF /dt - A/µs

1.0

0.8

0.6

seconds

m

0.4

-

rr

t

0.2

max. I

= 60A

F

typ. I

= 120A

F

I

= 60A

F

I

= 30A

F

max. I

= 60A

F

TJ = 100°C V

= 540V

R

0

200 400 600 800 1000

diF /dt - A/µs

0.0 0 200 400 600 800 1000

diF /dt - A/µs

5 - 5

Datasheet IXSX35N120AU1 Datasheet (IXYS)

Specifications and Main Features

Frequently Asked Questions

User Manual