High Speed IGBT with Diode
Short Circuit SOA Capability
IXSH 30N60BD1
IXSK 30N60BD1
IXST 30N60BD1
V
CES
I
C25
V
CE(sat)
t
fi
= 600 V
= 55 A
= 2.0 V
= 140 ns
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, VCL = 0.8 V
t
SC
(SCSOA) RG = 33 W, non repetitive
P
C
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C55A
TC= 90°C30A
TC= 25°C, 1 ms 110 A
= 15 V, TJ = 125°C, RG = 10 W ICM = 60 A
GE
CES
VGE= 15 V, VCE = 360 V, TJ = 125°C 10ms
TC= 25°C 200 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.13/10 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight TO-247/TO-268 6/4 g
TO-264 10 g
TO-247AD
(IXSH)
G
C
E
TO-268 (D3)
(IXST)
G
E
C
TO-264
(IXSK)
G
C
E
G = Gate C = Collector
E = Emitter TAB = Collector
Features
• International standard packages:
JEDEC TO-247, TO-264& TO-268
• Short Circuit SOA capability
• Medium freqeuncy IGBT and antiparallel FRED in one package
• New generation HDMOSTM process
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 750 mA, VGE = 0 V 600 V
IC= 2.5 mA, VCE = V
VCE= 0.8 • V
VGE= 0 V TJ = 125°C3mA
CES
GE
TJ = 25°C 200 mA
47V
VCE= 0 V, VGE = ±20 V ±100 nA
VGE = 15 V IC = I
IC = I
C90
C25
2.0 V
2.7 V
© 2000 IXYS All rights reserved
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Surface mountable, high power case
style
• Reduces assembly time and cost
• High power density
98517A (7/00)
1 - 5
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
thCK
IC= I
Pulse test, t £ 300 ms, duty cycle £ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz 240 pF
IC = I
Inductive load, T
= I
I
C
V
CE
Note 1.
Inductive load, TJ = 125°C
IC = I
V
CE
Note 1
; VCE = 10 V, 10 S
C90
3100 pF
30 pF
100 nC
, VGE = 15 V, VCE = 0.5 V
C90
= 25°C
J
; VGE = 15 V
C90
= 0.8 V
; RG = 4.7 W
CES
CES
30 nC
38 nC
30 ns
30 ns
150 270 ns
140 270 ns
1.5 2.5 mJ
30 ns
35 ns
; VGE = 15 V
C90
= 0.8 V
; RG = 4.7 W
CES
0.5 mJ
270 ns
250 ns
2.5 mJ
TO-247 0.25 K/W
TO-264 0.15 K/W
0.62 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-264 AA (IXSK) Outline
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
IF = I
V
F
I
RM
t
rr
R
thJC
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • V
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
TO-268AA (IXST) (D3 PAK)
, VGE = 0 V TJ = 150 °C 1.7 V
C90
Note 2 TJ = 25 °C 2.5 V
IF = 50A; VGE = 0 V; TJ = 100 °C 2 2.5 A
VR = 100 V; -diF/dt = 100 A/ms
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C3550ns
.09 K/W
, higher TJ or increased RG.
CES
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
2.7 2.9 .106 .114
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
1.9 2.1 .75 .83
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
13.3 13.6 .524 .535
E
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
Millimeter Inches
Dim.
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2 - 5
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
Fig.1 Saturation Characteristics Fig.2 Output Characterstics
100
TJ = 25°C
VGE = 15V
13V
80
60
11V
40
- Amperes
C
I
9V
20
7V
0
012345
VCE - Volts
200
TJ = 25°C
VGE = 15V
13V
11V
160
120
80
- Amperes
C
I
40
0
0246810
VCE - Volts
9V
7V
5V
Fig.3 Collector-Emitter Voltage Fig.4 Temperature Dependence
vs. Gate-Emitter Voltage of Output Saturation Voltage
120
TJ = 125°C
100
80
VGS=15V
13V
11V
60
- Amperes
C
40
I
20
9V
7V
0
0246810
VCE - Volts
1.6
= 60A
VGE = 15V
I
C
1.4
1.2
= 30A
I
C
- Normalized
1.0
CE (sat)
V
0.8
IC = 15A
0.6
25 50 75 100 125 150
TJ - Degrees C
Fig.5 Input Admittance Fig.6 Temperature Dependence of
140
120
100
- Amperes
C
I
V
= 10V
CE
80
60
T
= 125°C
40
J
20
0
4 6 8 10121416
VGE - Volts
© 2000 IXYS All rights reserved
TJ = 25°C
Capacitance - pF
Breakdown and Threshold Voltage
10000
1000
100
10
0 5 10 15 20 25 30 35 40
VCE-Volts
C
C
oss
C
f = 1Mhz
iss
rss
3 - 5
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
Fig.7 Turn-Off Energy per Pulse and Fig.8 Dependence of Turn-Off Energy
Fall Time on Collector Current Per Pulse and Fall Time on R
1.5
TJ = 125°C
RG = 10
1.0
- millijoules
E
(ON)
0.5
E
(ON)
E
(OFF)
0.0
0 20406080
IC - Amperes
Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area
7.5
5.0
2.5
0.0
(OFF)
2.0
TJ = 125°C
E
1.5
E
(OFF)
IC = 60A
- milliJoules
1.0
- millijoules
(ON)
E
0.5
0.0
E
(ON)
I
C
I
C
= 30A
= 15A
0 1020304050
RG - Ohms
G
8
E
6
E
(ON)
(OFF)
- millijoules
(OFF)
(OFF)
4
2
0
E
(ON)
E
E
15
12
V
I
C
CE
=30A
= 300V
9
- Volts
GE
6
V
3
0
0 25 50 75 100 125
Qg - nanocoulom bs
Fig.11 Transient Thermal Resistance
1
D=0.5
D=0.2
0.1
D=0.1
D=0.05
(K/W)
D=0.02
thJC
D=0.01
Z
0.01
D = Duty Cycle
100
10
- Amperes
C
1
I
TJ = 125°C
RG = 4.7
dV/dt < 5V/ns
0.1
0 100 200 300 400 500 600
VCE - Volts
Single pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4 - 5
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
60
A
50
I
F
40
TVJ=150°C
30
TVJ=100°C
20
TVJ=25°C
10
0
0123
V
F
Fig. 12Forward current IF versus V
2.0
1.5
K
f
1.0
0.5
I
RM
Q
r
I
RM
30
A
25
20
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
1000
Q
r
nC
800
600
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
15
400
10
200
0
V
100 1000
A/ms
-diF/dt
F
Fig. 13Reverse recovery charge Q
versus -diF/dt
r
90
TVJ= 100°C
ns
t
rr
VR = 300V
80
5
0
200 600 10000 400 800
-di
Fig. 14Peak reverse current I
versus -diF/dt
20
TVJ= 100°C
IF = 30A
V
V
FR
15
t
fr
V
FR
F
A/ms
/dt
RM
1.00
µs
t
fr
0.75
IF= 60A
IF= 30A
IF= 15A
10
0.50
70
5
0.25
0.0
0 40 80 120 160
T
VJ
Fig. 15Dynamic parameters Qr, I
versus T
VJ
°C
RM
60
200 600 10000 400 800
-di
A/ms
/dt
F
Fig. 16Recovery time trr versus -diF/dt Fig. 17Peak forward voltage VFR and t
1
K/W
0.1
Z
thJC
0.01
0.001
0.00001 0.0001 0.001 0.01 0.1 1
s
t
Fig. 18Transient thermal resistance junction to case
DSEP 29-06
0
0 200 400 600 800 1000
A/ms
diF/dt
versus diF/dt
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.502 0.0052
2 0.193 0.0003
3 0.205 0.0162
0.00
fr
© 2000 IXYS All rights reserved
5 - 5
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