Low V
CE(sat)
IGBT IXSH 45N100 V
Short Circuit SOA Capability
IXSM 45N100 I
CES
C25
V
CE(sat)
= 1000 V
= 75 A
= 2.7 V
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V
t
SC
(SCSOA) RG = 22 W, non repetitive
P
C
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGE = 1 MW 1000 V
Continuous ±20 V
Transient ±30 V
TC= 25°C75A
TC= 90°C45A
TC= 25°C, 1 ms 180 A
= 15 V, TJ = 125°C, RG = 2.7 W ICM = 90 A
GE
CES
VGE= 15 V, VCE = 0.6 • V
, TJ = 125°C 10ms
CES
TC= 25°C 300 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
V
I
CES
I
GES
V
CES
GE(th)
CE(sat)
IC= 3 mA, VGE = 0 V 1000 V
IC= 4 mA, VCE = V
VCE= 0.8 • V
VGE= 0 V TJ = 125°C1mA
CES
GE
TJ = 25°C 250 mA
58V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 2.7 V
C90
TO-247 AD (IXSH)
G
C
E
TO-204 AE (IXSM)
C
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
• International standard packages
• Guaranteed Short Circuit SOA
capability
• Low V
CE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
93013E (12/96)
1 - 4
IXSH 45N100 IXSM 45N100
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
I
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
C(on)
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
IC= I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
VGE = 15 V, VCE = 10 V 195 A
; VCE = 10 V, 20 25 S
C90
4150 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 300 pF
60 pF
165 260 nC
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
40 60 nC
80 200 nC
Inductive load, TJ = 25°C
I
= I
, VGE = 15 V, L = 100 mH
C
C90
VCE = 0.8 V
, RG = 2.7 W
CES
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R
G
Inductive load, TJ = 125°C
IC = I
, VGE = 15 V, L = 100 mH
C90
VCE = 0.8 V
, RG = 2.7 W
CES
Remarks: Switching times
may increase for
V
(Clamp) > 0.8 • V
CE
higher TJ or increased R
CES
,
G
CES
,
80 ns
150 ns
400 ns
1000 1500 ns
15 mJ
100 ns
300 ns
5.4 mJ
550 900 ns
2200 2900 ns
25 mJ
0.42 K/W
0.25 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-204 AE (IXSM) Outline
© 2000 IXYS All rights reserved
Dim. Millimeter Inches
Min. Max. Min. Max.
A 38.61 39.12 1.520 1.540
B - 22.22 - 0.875
C 6.40 11.40 0.252 0.449
D 1.45 1.60 0.057 0.063
E 1.52 3.43 0.060 0.135
F 30.15 BSC 1.187 BSC
G 10.67 11.17 0.420 0.440
H 5.21 5.71 0.205 0.225
J 16.64 17.14 0.655 0.675
K 11.18 12.19 0.440 0.480
Q 3.84 4.19 0.151 0.165
R 25.16 26.66 0.991 1.050
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2 - 4
IXSH 45N100 IXSM 45N100
Fig.1 Saturation Characteristics Fig.2 Output Characterstics
70
60
50
= 25°C
T
J
VGE = 15V
13V
11V
300
250
200
T
= 25°C
J
40
150
30
- Amperes
C
I
20
10
0
012345
VCE - Volts
9V
7V
- Amperes
C
I
100
50
0
02468101214161820
VCE - Volts
Fig.3 Collector-Emitter Voltage Fig.4 Temperature Dependence
vs. Gate-Emitter Voltage of Output Saturation Voltage
10
T
= 25°C
J
9
8
7
6
5
- Volts
V
CE
4
3
2
1
IC = 90A
IC = 45A
IC = 22.5A
0
8 9 10 11 12 13 14 15
1.8
VGE = 15V
1.6
1.4
1.2
- Normalized
1.0
CE(sat)
V
0.8
0.6
-50 -25 0 25 50 75 100 125 150
VGE = 15V
13V
11V
9V
IC = 90A
IC = 45A
IC = 22.5A
VGE - Volts
Fig.5 Input Admittance Fig.6 Temperature Dependence of
90
V
= 10V
CE
80
70
60
50
40
- Amperes
C
I
30
20
10
0
4 5 6 7 8 9 10 11 12 13 14 15
© 2000 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
VGE - Volts
TJ = - 40°C
TJ - Degrees C
Breakdown and Threshold Voltage
1.3
- Normalized
BV / V
1.2
V
GE(th)
IC = 4mA
1.1
1.0
(th)
0.9
BV
CES
IC = 3mA
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
3 - 4
IXSH 45N100 IXSM 45N100
Fig.7 Turn-Off Energy per Pulse and Fig.8 Dependence of Turn-Off Energy
Fall Time on Collector Current Per Pulse and Fall Time on R
3000
E
2750
TJ = 125°C
= 10
W
R
G
off
2500
2250
2000
- nanoseconds
fi
t
1750
60
50
40
t
fi
30
- millijoules
20
off
E
10
2600
TJ = 125°C
= 45A
I
C
2400
t
fi
2200
E
- nanoseconds
fi
t
2000
off
G
40
35
30
- millijoules
off
E
25
1500
0 20406080100
IC - Amperes
0
1800
0 1020304050
RG - Ohms
Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area
15
IC = 45A
= 500V
V
CE
12
9
- Volts
GE
6
V
3
0
0 50 100 150 200
Qg - nanocoulombs
100
10
TJ = 125°C
= 2.7
W
R
G
dV/dt < 6V/ns
1
Ic - Amperes
0.1
0.01
0 200 400 600 800 1000
VCE - Volts
Fig.11 Transient Thermal Impedance
20
1
D=0.5
D=0.2
0.1
D=0.1
(K/W)
D=0.05
thJC
D=0.02
Z
0.01
D=0.01
Single Pulse
D = Duty Cycle
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - seconds
© 2000 IXYS All rights reserved
4 - 4
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