Page 1
Low V
CE(sat)
IGBT
IXGR 60N60U1
with Diode
ISOPLUS247
(Electrically Isolated Back Surface)
Preliminary data
TM
V
CES
I
C25
V
CE(sat)
= 600 V
= 75 A
= 1.7 V
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C100
I
CM
SSOA V
(RBSOA) Clamped inductive load; V
P
C
T
J
T
JM
T
stg
T
L
V
ISOL
Weight 5 g
Symbol Test Conditions Characteristic Values
BV
V
GE(th)
I
CES
I
GES
V
CE(sat)
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 7 5 A
TC= 90°C 6 0 A
TC= 25°C, 1 ms 200 A
= 15 V, TVJ = 125°C, RG = 10 W ICM = 100 A
GE
TC= 25°C 300 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
50/60Hz, RMS, t = 1minute, leads-to tab 2500 V
CES
IC= 1 mA, VGE = 0 V 600 V
IC= 250 mA, VCE = V
VCE= V
VGE= 0 V TJ = 150°C2mA
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
CES
, VGE = 15 V 1.7 V
C100
= 0.8 V
CL
GE
TJ = 25°C 250 mA
CES
-55 ..+ 150 °C
150 °C
-55...+ 150 °C
(TJ = 25°C, unless otherwise specified)
min. typ. max.
2.5 5.5 V
ISOPLUS247
G = Gate, C = Collector,
E = Emitter, TAB = Collector
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low collector to tab capacitance
(<25pF)
• Rugged polysilicon gate cell structure
• Fast intrinsic Rectifier
• Low V
for minimum on-state conduction
losses
• MOS Gate turn-on for drive simplicity
Applications
• Solid state relays
• Capacitor discharge circuits
• High power ignition circuits
Advantages
• Space savings (two devices in one
package)
• Reduces assembly time and cost
• High power density
TM
G
C
E
Isolated back surface*
IGBT and standard diode
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98595C (7/00)
1 - 5
Page 2
IXGR 60N60U1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
d(off)
fi
off
thJC
thCK
IC= I
Pulse test, t £ 300 ms, duty cycle £ 2 %
Inductive load, TJ = 25°C
IC = I
VCE = 0.8 V
Remarks: Switching times may increase
for V
increased R
Inductive load, T
I
VCE = 0.8 V
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R
; VCE = 10 V, 30 40 S
C100
4000 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 340 pF
100 pF
200 nC
IC = I
, VGE = 15 V, VCE = 0.5 V
C100
CES
35 nC
80 nC
50 ns
, VGE = 15 V, L = 100 mH,
C100
, RG = R
CES
= 2.7 W
off
200 ns
600 800 ns
500 700 ns
(Clamp) > 0.8 • V
CE
G
= I
, VGE = 15 V, L = 100 mH
C
C100
, RG = R
CES
= 125°C
J
, higher TJ or
CES
= 2.7 W
off
16 mJ
50 ns
240 ns
1000 ns
1000 ns
, higher TJ or
CES
G
26 mJ
0.5 K/W
0.15 K/W
ISOPLUS 247 (IXGR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
1.91 2.13 .075 .084
b
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080
Reverse Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
R
thJC
© 2000 IXYS All rights reserved
IF = I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
, VGE = 0 V, 2.2 V
C100
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
1.0 K/W
2 - 5
Page 3
IXGR 60N60U1
100
90
TJ = 25°C
350
300
TJ = 25°C
VGE = 15V
13V
80
70
VGE = 15V
60
50
40
- Amperes
C
I
30
20
10
0
012345
VCE - Volts
13V
11V
9V
7V
250
11V
200
150
- Amperes
C
I
100
50
0
0246810
VCE - Volts
9V
7V
Figure 1. Saturation Voltage Characteristics Figure 2. Extended Output Characteristics
- Amperes
C
I
200
175
150
125
100
75
50
25
= 15V
V
GE
TJ = 25oC
TJ = 125oC
- Normalized
CE (sat)
V
1.8
1.6
1.4
1.2
1.0
0.8
VGE = 15V
= 120A
I
C
I
C
IC = 30A
= 60A
0
01234
VCE - Volts
0.6
25 50 75 100 125 150
TJ - Degrees C
Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of V
1.3
100
10
TJ = 125oC
R
= 4.7
W
- Amperes
I
C
1
G
dV/dt < 5V/ns
0.1
0 100 200 300 400 500 600
VCE - Volts
Figure 5. Admittance Curves
1.2
1.1
1.0
- Normalized
0.9
GE(th)
0.8
BV/V
0.7
0.6
-50 -25 0 25 50 75 100 125 150
Figure 6. Capacitance Curves
V
GE(th)
= 250µA
IC
TJ - Degrees C
BV
CES
IC = 250µA
CE(sat)
© 2000 IXYS All rights reserved
3 - 5
Page 4
IXGR 60N60U1
1000
TJ = 125°C
RG = 10
750
tfi
500
E
- nanoseconds
fi
t
250
off
0
0 20406080100120
IC - Amperes
Figure 7. Dependence of EON and E
15
12
9
- Volts
GE
6
V
3
V
I
C
CE
= 60A
= 300V
OFF
on IC.
40
30
20
10
0
1000
E
off
- milliJoules
800
600
- nanoseconds
fi
t
400
200
TJ = 125°C
I
= 60A
C
E
off
tfi
18
16
14
12
10
E
off
- millijoules
0 1020304050
RG - Ohms
Figure 8. Dependence of EON and E
on RG.
OFF
10000
Cies
1000
100
Capacitance - picofards
0
0 50 100 150 200 250
QG - nanocoulombs
Figure 9. Gate Charge
1
0.1
10
0 10203040
VCE - Volts
Figure 10. Turn-off Safe Operating Area
(K/W)
thJC
Z
0.01
0.001
D = Duty Cycle
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Seconds
Figure 11. IGBT Transient Thermal Resistance
© 2000 IXYS All rights reserved
4 - 5
Page 5
IXGR 60N60U1
Fig. 12 Forward current Fig. 13 Recovery charge versus -diF/dt. Fig. 14 Peak reverse current versus
versus voltage drop. -diF/dt.
Fig. 15. Dynamic parameters versus Fig. 16 Recovery time versus -diF/dt. Fig. 17 Peak forward voltage vs. diF/dt.
junction temperature.
Fig. 18 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
5 - 5
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