Datasheet IXGN50N60B Datasheet (IXYS)

HiPerFASTTM IGBT IXGN 50N60B V

I V

Preliminary data sheet

E

CES

C25

CE(sat)

= 600 V = 75 A

= 2.5 V

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V (RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V

P

C

T

J

T

JM

T

stg

M

d

TJ= 25°C to 150°C 600 V TJ= 25°C to 150°C; RGE = 1 MW 600 V

Continuous ±20 V Transient ±30 V

TC= 25°C75A TC= 90°C50A TC= 25°C, 1 ms 200 A

= 15 V, TVJ = 125°C, RG = 10 W ICM = 100 A

GE

CES

TC= 25°C 250 W

-55 ... +150 °C 150 °C

-55 ... +150 °C

Mounting torque 1.5/13 Nm/lb.in.

Terminal connection torque (M4) 1.5/13 Nm/lb.in. Weight 30 g Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

SOT-227B miniBLOC

E ①

G

E ①

C

G = Gate, C = Collector, E = Emitter ① Either emitter terminal can be used

as Main or Kelvin Emitter

Features

• International standard package SOT-227B

• Aluminium nitride isolation

- high power dissipation

• Isolation voltage 3000 V~

• Very high current, fast switching IGBT

• Low V conduction losses

for minimum on-state

CE(sat)

• MOS Gate turn-on drive simplicity

• Low collector-to-case capacitance (< 50 pF)

• Low package inductance (< 5 nH)

- easy to drive and to protect

Symbol Test Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

J

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

IXYS reserves the right to change limits, test conditions, and dimensions.

IC= 250 mA, VGE = 0 V 600 V IC= 250 mA, VCE = V

VCE= 0.8 • V VGE= 0 V TJ = 125°C1mA

CES

GE

VCE= 0 V, VGE = ±20 V ±100 nA IC= I

, VGE = 15 V 2.5 V

C90

min. typ. max.

2.5 5 V 200 mA

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode power supplies

Advantages

• Easy to mount with 2 screws

• Space savings

• High power density

97531A (7/00)

1 - 4

IXGN 50N60B

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

C C C

Q Q Q

t t t t E

t t E t t E

R R

fs

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

thJC

thCK

IC= I Pulse test, t £ 300 ms, duty cycle £ 2 %

; VCE = 10 V, 25 35 S

C90

4000 pF

VCE = 25 V, VGE = 0 V, f = 1 MHz 340 pF

100 pF 110 180 nC

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

CES

30 50 nC 40 100 nC

, RG = R

CES

G

, RG = R

CES

G

= 25°C

J

off

= 2.7 W

, higher TJ or

CES

= 2.7 W

off

, higher TJ or

CES

50 ns

30 ns 200 ns 150 ns

3mJ

50 ns

25 ns

3mJ 280 ns 250 ns

4.2 mJ

Inductive load, T

IC = I

, VGE = 15 V, L = 100 mH,

C90

VCE = 0.8 V Remarks: Switching times may increase

for VCE (Clamp) > 0.8 • V increased R

Inductive load, TJ = 125°C

IC = I

, VGE = 15 V, L = 100 mH

C90

V

= 0.8 V

CE

Remarks: Switching times may increase for VCE (Clamp) > 0.8 • V increased R

0.50 K/W

0.05 K/W

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505

J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

2 - 4

IXGN 50N60B

100

TJ = 25°C

80

= 15V

V

GE

13V 11V 9V

60

40

- Amperes

C

I

20

0

012345

VCE - Volts

7V

5V

200

160

TJ = 25°C

VGE = 15V 13V

11V

9V

120

80

- Amperes

C

I

7V

40

5V

0

0246810

VCE - Volts

Figure 1. Saturation Voltage Characteristics Figure 2. Extended Output Characteristics

100

TJ = 125°C

80

60

40

- Amperes

C

I

VGE = 15V 13V

11V

9V

7V

5V

20

- Normalized

CE (sat)

V

1.6

1.4

1.2

1.0

0.8

0.6

VGE = 15V

IC = 25A

= 50A

I

C

= 100A

I

C

0

012345

VCE - Volts

0.4

25 50 75 100 125 150

TJ - Degrees C

Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of V

100

V

= 10V

CE

80

60

40

- Amperes

C

I

T

= 125°C

J

20

0

0246810

VGE - Volts

Figure 5. Admittance Curves

TJ = 25°C

10000

1000

100

Capacitance - pF

10

0 5 10 15 20 25 30 35 40

VCE-Volts

Figure 6. Capacitance Curves

C

f = 1Mhz

iss

oss

rss

CE(sat)

3 - 4

IXGN 50N60B

6

TJ = 125°C

5

RG = 4.7



4 3

- millijoules

2

(ON)

E

1 0

0 20406080100

IC - Amp e res

on IC.

OFF

16

12

- Volts

GE

V

8

4

V

I

CE

C

=25A

= 250V

12

E

(ON)

10

E

(OFF)

8

E

(OFF)

- milliJoules

6

4

2

0

6

TJ = 125°C

E

(ON)

5

= 100A

I

C

4

E

(ON)

3

- millijou les

2

(ON)

E

IC = 50A

1

E

(ON)

IC =25A

0

12

10

E

(OFF)

E

(OFF)

8

- millijoules

6

E

(OFF)

4

E

(OFF)

2

0

0 102030405060

RG - Ohms

Figure 8. Dependence of EON and E

OFF

on RG.Figure 7. Dependence of EON and E

600

100

10

- Amp e res

C

I

TJ = 125°C

RG = 6.2



dV/dt < 5V/ns

1

0

0 20406080100120

Qg - nanocoulombs

Figure 9. Gate Char-

0.1 0 100 200 300 400 500 600

VCE - Volts

Figure 10. Turn-off Safe Operating Area

ge

1

0.1

(K/W)

thJC

Z

0.01

Single pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1

Figure 11. IGBT Transient Thermal Resistance

4 - 4