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P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
IT1700
CORPORATION
FEATURES
Low ON-Re si stance
••
High Gain
••
Low Noise Voltage
••
High Input Impedance
••
Low Leakage
••
PIN CONFIGU R ATION
1503
ABSOLUTE MAXIMUM RATINGS
= 25oC unless otherwise specified)
(T
A
Drain-Source an d Gate- Sour ce V olt age . . . . . . . . . . . . . -40V
Peak Gate-Sour ce Voltage (Not e 1) . . . . . . . . . . . . . . . ±125V
Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50m A
Storage Temperatur e . . . . . . . . . . . . . . . . . . -65
Operating Temperatur e Ra nge . . . . . . . . . . . -55
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25
NOTE: Stresses above those listed under "Absolute Maxi mum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
TO-72
C
S
G
D
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package Temperature Range
IT1700 Hermetic T O- 72 -55
XIT1700 Sorted Chips in Carriers -55
o
C . . . . . . . . . . . . . . . . . . . . . . . . 3mW /oC
o
C to +200oC
o
C to +150oC
o
C to +150oC
o
C to +150oC
o
C
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CORPORATION
ELECTRICAL CHARACTERISTIC S (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS
BV
DSS
Drain to Source Breakdown Voltage
-40 V
VGS = 0, ID = -10µA
IT1700
BV
SDS
I
GSS
I
DSS
I
(150oC) Drain to Source Leakage Current
DSS
I
SDS
I
(150oC) Source to Drain Leakage Current
SDS
V
GS(th)
r
DS(on)
I
DS(on)
g
fs
C
iss
C
rss
C
oss
Source to Drain Breakdown Voltage
-40 V
Gate Leakage Current
Drain to Source Leakage Current
Source to Drain Leakage Current
Gate Threshold Voltage -2 -5 V VGS = VDS, ID = -10µA
Static Drain to Source "on" Resistance 400 ohms VGS = -10V, VDS = 0
Drain to Source "on" Current 2 mA VGS = -10V, VDS = -15V
Forward Transconductance Common Source 2000 4000 µSVDS = -15V, ID = -10mA, f = 1kHz
Small Signal, Short Circuit, Common Source,
Input Capacitance
Small Signal, Short Circuit, Common Source,
Reverse Transfer Capacitance
Small Signal, Short Circuit, Common Source,
Output Capacitance
NOTES: 1. Device must not be tested at ±125V more than once nor longer than 300ms.
2. Actual gate current is immeasurable. Package suppliers are required to guarantee a package leakage of < 10pA.
External package leakage is the dominant mode which is sensitive to both transient and storage environment, which cannot be guaranteed.
3. For design reference only, not 100% tested.
(See note 2)
200 pA
0.4 µA
400 pA
0.8 µA
5pF
1.2 pF
3.5 pF
VGS = 0, ID = -10µA
= 0, VDS = -20V
V
GS
V
= -15V, ID = -10mA
DS
f = 1MHz (Note 3)
V
= -15V, ID = 0
DG
f = 1MHz (Note 3)
V
= -15V, ID = -10mA
DS
f = 1MHz (Note 3)
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