Datasheet ISTS802B, ISTS802A, ISTS802, ISTS802C Datasheet (ISOCOM)

Page 1
ISTS802, ISTS802A, ISTS802B, ISTS802C
0.5mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL WIDE GAP SLOTTED INTERRUPTER
SWITCHES WITH TRANSISTOR SENSORS
The ISTS802 series of opaque photointerrupters are single channel switches consisting of a Gallium Arsenide infrared emitting diode and a NPN silicon photo transistor mounted in a polycarbonate housing. The package is designed to optimise the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. Operating on the principle that objects opaque to infrared will interrupt the transmission of light between an infrared emitting diode and a photo sensor switching the output from an "ON" state to an "OFF" state.
FEATURES
l High Sensing Accuracy Aperture - 0.5mm
l 5mm Gap between LED and Detector
l Also available with flying leads, with or
without connector, supplied as required
APPLICATIONS
l Copiers, Printers, Facsimilies, Record
Players, Casette Decks, Optoelectronic Switches, VCR's
1
2
4
3
3.3 DIA
1
2
11.3
10.9
ISTS802A
1
0.5 2
8.3
7.9
ISTS802B
20.2
+ E
14.2
5.0
8.3
7.9
10.16 2.54
26.2
20.2
+ E
14.2
5.0
10.16 2.54
Dimensions in mmDESCRIPTION
417.2
0.5 3
0.45
0.40
4
3
11.3
10.9
0.45
0.40
6.6
3.3
3.0
2.8
3.3
3.0
OPTICAL CENTRE LINE
3.3 DIA
6.6
3.3
3.0
2.8
3.3
3.0
OPTICAL CENTRE LINE
1
0.5
2
8.3
7.9
ISTS802
20.2
+ E
14.2
10.16
17.2
5.0
4
6.6
3
11.3
10.9
0.45
0.40
2.54
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
24/9/97
3.3 DIA
3.3
3.0
2.8
3.3
3.0 OPTICAL
CENTRE LINE
1
0.5 2
8.3
7.9
ISTS802C
11.3
10.9
0.45
0.40
4
3
6.6
3.3
3.0
2.54
+ E
14.2
10.16
5.0
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Fax: (972) 422-4549
DB91084-AAS/A1
2.8
OPTICAL CENTRE LINE
Page 2
ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified)
Storage Temperature -40°C to + 85°C Operating Temperature -25°C to + 85°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA Reverse Voltage 5V Power Dissipation 75mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV Emitter-collector Voltage BV Collector Current I Power Dissipation 75mW
C
CEO ECO
30V 5V 20mA
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.0 1.15 1.3 V IF = 10mA
Reverse Voltage (VR)3VI Reverse Current (IR)10µAV
Output Collector-emitter Breakdown (BV
)30 V IC = 1mA
CEO
= 10µA
R
= 3V
R
( Note 1 )
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
) 5 V IE = 100µA
ECO
) 100 nA VCE = 24V
CEO
Coupled Current Transfer Ratio ( CTR ) 2 % 20mA IF , 5V V
( Note 1 )
CE
Collector-emitter Saturation VoltageV
CE(SAT)
Output Rise Time tr 6 µsV Output Fall Time tf 6 µsI
Note 1 Special Selections are available on request. Please consult the factory.
24/9/97
0.4 V 20mA I
= 5V ,
CE
= 2mA,RL= 100
C
, 200µA I
F
DB91084-AAS/A1
C
Page 3
Collector Power Dissipation vs. Ambient Temperature
100
(mW)
C
75
50
25
Collector power dissipation P
0
-25 0 25 50 75 100 125 Ambient temperature TA ( °C )
Normalized Output Current vs.
Collector-emitter Voltage
10
4 2
1
0.4
0.2
0.1
0.04
Normalized output current
0.02
TA = 25°C
0.01
Normalized to IF = 20mA V
CE
Pulsed PW = 100µs PRR = 100pps
0.1 1 10 100 Collector-emitter voltage V
IF = 30mA
20mA
10mA
5mA
= 5V
( V )
CE
Forward Current vs. Ambient Temperature
60
50
(mA)
40
F
30
20
Forward current I
10
0
-25 0 25 50 75 100 125 Ambient temperature TA ( °C )
Normalized Output Current
vs. Ambient Temperature
1.5 IF = 20mA
VCE = 5V
Normalized Output Current vs.
2.0
1.8
1.6
1.4
1.2
Normalized to IF = 20mA V
CE
Pulsed PW = 100µs PRR = 100pps
Forward Current
= 0.4V
1.0
0.8
0.6
0.4
Normalized output current
0.2 0
1 2 5 10 20 50
Forward current IF (mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
(V)
0.28
CE(SAT)
0.24
0.20
IF = 20mA IC = 200µ A
TA = 25°C
24/9/97
1.0
0.5
Normalized output current
0
-25 0 25 50 75 100 Ambient temperature TA ( °C )
0.16
0.12
0.08
0.04 0
Collector-emitter saturation voltage V
-25 0 25 50 75 100 Ambient temperature TA ( °C )
DB91084-AAS/A1
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