Page 1
ISTS149, ISTS703A, ISTS708
REFLECTIVE OPTICAL
SWITCHES
DESCRIPTION
The ISTS149, ISTS703A, ISTS708 each consist
of an infrared emitting diode and a NPN silicon
photo transistor mounted side by side on
converging axes in a polycarbonate housing. The
package is designed to optimise the mechanical
resolution, coupling efficiency, ambient light
rejection, cost and reliability.The phototransistor
responds to radiation from the emitter only when
a reflective object passes within its field of view
FEATURES
l Phototransistor output
l Opaque housing provides improved
visible light rejection
l Three available package types
l Adjustable side-mounting provision
l Also available with flying leads, with or
without connector, supplied as required
APPLICATIONS
l Copiers, Printers, Facsimilies, Record
Players, Casette Decks, Optoelectronic
Switches, VCR's,
ISTS708
5.1
point of
optimum
response
3.3
3.0
4.1
3.5
ISTS149
5.1
point of
optimum
response
ISTS703A
5.1
5.1
12.3
3.8
9.7
9.5
9.15
3.18 nom.
0.5
sq.
2.54
3.18 nom.
2.54
Dimensions in mm
12
15.5
15.0
12
2.3
0.5
sq.
43
34
17.8
34
17.8
2.54
4.6
8.9
21
1
2
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
24/9/97
4
point of
optimum
response
8.0
5.5
3
2.54
4.45 nom.
1.70
1.45
0.5
sq.
3.3
3.0
17.0
15.0
22.8
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
DB92074-AAS/A1
Page 2
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -40°C to + 85°C
Operating Temperature -25°C to + 85°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 3V
Power Dissipation 90mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
Emitter-collector Voltage BV
Collector Current I
Power Dissipation 50mW
C
CEO
ECO
30V
5V
20mA
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.6 V IF = 40mA
Reverse Voltage (VR)3VI
Reverse Current (IR) 100 µAV
Output Collector-emitter Breakdown (BV
)30 V IC = 1mA
CEO
= 100µA
R
= 3V
R
( Note 1 )
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
) 5 V IE = 100µA
ECO
) 100 nA VCE = 15V
CEO
Coupled On-State Collector Current IC ( ON )
( Note 1 )
ISTS149 25 µA 40mA I
D(mm) = 3.8mm
ISTS703A 200 µA 40mA I
D(mm) = 3.8mm
ISTS708 10 µA 40mA I
D(mm) = 3.8mm
, 5V V
F
, 5V V
F
, 5V V
F
CE
CE
CE
Collector-emitter Saturation VoltageV
CE(SAT)
ISTS149 0.4 V 40mA I
ISTS703A 0.4 V 40mA I
ISTS708 0.4 V 40mA I
Note 1 Special Selections are available on request. Please consult the factory.
24/9/97
, 3µA I
F
D(mm) = 3.8mm
, 100µA I
F
D(mm) = 3.8mm
, 3µA I
F
D(mm) = 3.8mm
DB92074-AAS/A1
C
C
C
Page 3
Collector Power Dissipation vs. Ambient Temperature
60
Normalized Output Current vs.
Collector-emitter Voltage
10
50
(mW)
C
40
30
20
10
Collector power dissipation P
0
-25 0 25 50 75 100 125
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
80
70
60
(mA)
F
50
40
30
20
Forward current I
10
0
-25 0 25 50 75 100 125
Ambient temperature TA ( °C )
4
2
1
0.4
0.2
0.1
0.04
Normalized output current
0.02
TA = 25°C
0.01
Normalized to
IF = 40mA
V
CE
Pulsed
PW = 100µs
PRR = 100pps
0.1 1 10 100
Collector-emitter voltage V
Normalized Output Current vs.
2.0
1.8
1.6
1.4
1.2
Normalized to
IF = 40mA
V
CE
Pulsed
PW = 100µs
PRR = 100pps
Forward Current
TA = 25°C
= 0.4V
1.0
0.8
0.6
0.4
Normalized output current
0.2
0
1 2 5 10 20 50
Forward current IF (mA)
IF = 60mA
40mA
20mA
10mA
= 5V
( V )
CE
24/9/97
Normalized Output Current
vs. Ambient Temperature
1.5
IF = 40mA
VCE = 5V
1.0
0.5
Normalized output current
0
-25 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
(V)
0.28
CE(SAT)
0.24
0.20
IF = 40mA
IC = 100µ A
0.16
0.12
0.08
0.04
0
Collector-emitter saturation voltage V
-25 0 25 50 75 100
Ambient temperature TA ( °C )
DB92074-AAS/A1
Loading...