Datasheet ISL9V5036P3, ISL9V5036S3S Datasheet (Fairchild Semiconductor)

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

September 2002

General Description

The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next
generation IGBTs that offer outstanding SCIS capability in the D² ­Pak (TO-263) and TO-220 plastic package. These devices are
intended for use in automotive ignition circuits, specifically as coil
drivers. Internal diodes provide voltage clamping without the need
for external components.

EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.

Formerly Developmental Type 49443

Package

JEDEC TO-263AB

D²-Pak

G

E

COLLECTOR

(FLANGE)

Device Maximum Ratings T

JEDEC TO-220AB

JEDEC TO-262AA

E

C

G

COLLECTOR

(FLANGE)

= 25°C unless otherwise noted

A

Applications

• Automotive Ignition Coil Driver Circuits

• Coil- On Plug Applications

Features

• Industry Standard D-Pak package

• SCIS Energy = 500mJ at T

• Logic Level Gate Drive

= 25oC

J

Symbol

E

C

G

GATE

R

1

R

2

COLLECTOR

EMITTER

Symbol Parameter Ratings Units

BV
BV

E

SCIS25

E

SCIS150

I

C25

I

C110

V

GEM

P

T

T

STG

T

T

CER
ECS

pkg

Collector to Emitter Breakdown Voltage (IC = 1 mA) 390 V
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V
At Starting TJ = 25°C, I
At Starting TJ = 150°C, I

= 38.5A, L = 670 µHy 500 mJ

SCIS

= 30A, L = 670 µHy 300 mJ

SCIS

Collector Current Continuous, At TC = 25°C, See Fig 9 46 A
Collector Current Continuous, At TC = 110°C, See Fig 9 31 A
Gate to Emitter Voltage Continuous ±10 V
Power Dissipation Total TC = 25°C 250 W

D

Power Dissipation Derating T
Operating Junction Temperature Range -40 to 175 °C

J

> 25°C 1.67 W/°C

C

Storage Junction Temperature Range -40 to 175 °C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C

L

Max Lead Temp for Soldering (Package Body for 10s) 260 °C

ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4kV

©2002 Fairchild Semiconductor Corporation

ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

V5036S ISL9V5036S3S TO-263AB 24mm 800
V5036P ISL9V5036P3 TO-220AA - ­V5036S ISL9V5036S3 TO-262AA - -

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

BV

BV

BV

BV

I

CER

I

ECS

R
R

Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,

CER

Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,

CES

Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,

ECS

Gate to Emitter Breakdown Voltage I

GES

Collector to Emitter Leakage Current V

Emitter to Collector Leakage Current VEC = 24V , See

Series Gate Resistance - 75 - Ω

1

Gate to Emitter Resistance 10K - 30K Ω

2

= 1KΩ, See Fig. 15

R

G

= -40 to 150°C

T

J

R

= 0, See Fig. 15

G

= -40 to 150°C

T

J

= 25°C

T

C

= ± 2mA ±12 ±14 - V

GES

= 250V,

CER

R

= 1KΩ,

G

See Fig. 11

= 25°C- - 25 µA

T

C

= 150°C- - 1 mA

T

C

TC = 25°C- - 1 mA

Fig. 11

T

= 150°C- - 40 mA

C

330 360 390 V

360 390 420 V

30 - - V

On State Characteristics

V

CE(SAT)

V

CE(SAT)

Collector to Emitter Saturation Voltage IC = 10A,

= 4.0V

V

GE

Collector to Emitter Saturation Voltage IC = 15A,

= 4.5V

V

GE

T

= 25°C,

C

- 1.17 1.60 V

See Fig. 4
T

= 150°C - 1.50 1.80 V

C

Dynamic Characteristics

Q

G(ON)

V

GE(TH)

V

GEP

Switching Characteristics

t

d(ON)R

t

t

d(OFF)L

Gate Charge IC = 10A, VCE = 12V,

Gate to Emitter Threshold Voltage IC = 1.0mA,

Gate to Emitter Plateau Voltage IC = 10A,

Current T urn-On Delay Time-Resistive V
Current Rise Time-Resistive - 2.1 7 µs

rR

Current T urn-Off Delay Time-Inductive V
Current Fall Time-Inductive - 2.8 15 µs

t

fL

SCIS Self Clamped Inductive Switching T

= 5V, See Fig. 14

V

GE

V

= V

CE

GE,

See Fig. 10

= 12V

V

CE

= 14V, RL = 1Ω,

CE

= 5V, RG = 1KΩ

V

GE

T

= 25°C, See Fig. 12

J

= 300V, RL = 46Ω,

CE

= 5V, RG = 1KΩ

V

GE

= 25°C, See Fig. 12

T

J

= 25°C, L = 670 µH,

J

R

= 1KΩ, VGE = 5V, See

G

= 25°C1.3 - 2.2 V

T

C

T

= 150°C0.75 - 1.8 V

C

Fig. 1 & 2

-32-nC

-3.0- V

-0.74µs

- 4.8 15 µs

- - 500 mJ

Thermal Characteristics

R

©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

Thermal Resistance Junction-Case T O-263, TO-220 - - 0.6 °C/W

θJC

Typical Characteristics

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

45

40

35

30

25

20

15

10

, INDUCTIVE SWITCHING CURRENT (A)

5

SCIS

I

0

TJ = 150°C

SCIS Curves valid for V

RG = 1KΩ, VGE = 5V,Vdd = 14V

TJ = 25°C

Voltages of <390V

clamp

t

, TIME IN CLAMP (µS)

CLP

350300025010050 150 200

Figure 1. Self Clamped Inductive Switching

Current vs Time in Clamp

1.10
ICE = 6A

1.05

VGE = 3.7V

1.00

0.95

0.90

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

V

0.85

VGE = 4.5V

VGE = 5.0V

VGE = 8.0V

25-25 17512575-50 0 50 100 150

, JUNCTION TEMPERATURE (°C)

T

J

VGE = 4.0V

Figure 3. Collector to Emitter On-State Voltage vs

Junction Temperature

45

40

35

30

25

20

15

10

, INDUCTIVE SWITCHING CURRENT (A)

5

SCIS

I

0

0102468

TJ = 150°C

SCIS Curves valid for V

RG = 1KΩ, VGE = 5V,Vdd = 14V

Voltages of <390V

clamp

L, INDUCTANCE (mHy)

TJ = 25°C

Figure 2. Self Clamped Inductive Switching

Current vs Inductance

1.25
ICE = 10A

1.20

1.15

1.10

1.05

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

V

1.00

VGE = 4.5V

VGE = 5.0V

T

J

VGE = 3.7V

VGE = 8.0V

25-25 17512575-50 0 50 100 150

, JUNCTION TEMPERATURE (°C)

VGE = 4.0V

Figure 4. Collector to Emitter On-State Voltage

vs Junction Temperature

50

VGE = 8.0V
VGE = 5.0V

40

VGE = 4.5V
VGE = 4.0V
VGE = 3.7V

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

02.01.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = - 40°C

Figure 5. Collector Current vs Collector Emitter

On-State Voltage

©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

50

VGE = 8.0V
VGE = 5.0V

40

VGE = 4.5V
VGE = 4.0V
VGE = 3.7V

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

02.01.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 25°C

Figure 6. Collector Current vs Collector Emitter

On-State Voltage

Typical Characteristics (Continued)

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

50

VGE = 8.0V

VGE = 5.0V
VGE = 4.5V

40

VGE = 4.0V
VGE = 3.7V

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

02.01.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 175°C

Figure 7. Collector to Emitter On-State Voltage vs

Collector Current

50

VGE = 4.0V

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

50

DUTY CYCLE < 0.5%, VCE = 5V

PULSE DURATION = 250µs

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

TJ = 175°C

TJ = 25°C

2.51.5 3.5 4.5

2.01.0 3.0 4.0

VGE, GATE TO EMITTER VOLTAGE (V)

Figure 8. Transfer Characteristics

2.0

1.8

1.6

1.4

, THRESHOLD VOLTAGE (V)

TH

V

1.2

TJ = -40°C

VCE = VGE
ICE = 1mA

0

25 1751257550 100 150

TC, CASE TEMPERATURE (°C)

Figure 9. DC Collector Current vs Case

Temperature

10000

V

= 24V

ECS

1000

100

10

LEAKAGE CURRENT (µA)

1

0.1
25-25 17512575-50 0 50 100 150

TJ, JUNCTION TEMPERATURE (°C)

V

CES

V

= 300V

= 250V

CES

Figure 11. Leakage Current vs Junction

Temperature

©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

1.0

-50 7525-25

TJ JUNCTION TEMPERATURE (°C)

1500 125

Figure 10. Threshold Voltage vs Junction

Temperature

20

ICE = 6.5A, VGE = 5V, RG = 1KΩ

18

16

14

12

10

8

SWITCHING TIME (µS)

6

4

2

25 1751257550 100 150

TJ, JUNCTION TEMPERATURE (°C)

Resistive t

Inductive t

Resistive t

Figure 12. Switching Time vs Junction

Temperature

17550 100

OFF

OFF

ON

Typical Characteristics (Continued)

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

3000

2500

2000

C

1500

1000

C, CAPACITANCE (pF)

500

0

IES

C

RES

0105 152025

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FREQUENCY = 1 MHz

C

OES

Figure 13. Capacitance vs Collector to Emitter

Voltage

360

I

= 10mA

CER

358
356
354
352
350
348
346

, BREAKDOWN VOLTAGE (V)

CER

344

BV

342
340

10 20001000 3000

100

RG, SERIES GATE RESISTANCE (kΩ)

TJ = 175°C

8

I

= 1mA, RL = 0.6Ω, TJ = 25°C

G(REF)

7

6

5

V

= 12V

CE

4

3

2

, GATE TO EMITTER VOLTAGE (V)

GE

V

1

0

0 10203040

VCE = 6V

Q

, GATE CHARGE (nC)

G

Figure 14. Gate Charge

TJ = 25°C

50

TJ = - 40°C

Figure 15. Breakdown Voltage vs Series Gate Resistance

0

10

0.5

0.2

0.1

-1

10

10

10

, NORMALIZED THERMAL RESPONSE

thJC

Z

10

0.05

0.02

0.01

-2

-3

SINGLE PULSE

-4

-6

10

-5

10

-4

10

T1, RECTANGULAR PULSE DURATION (s)

10

DUTY FACTOR, D = t1 / t
PEAK TJ = (PD X Z

-3

t

1

P

D

t

2

2

X R

θ

JC

-2

10

) + T

θ

JC

C

-1

10

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case

©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

Test Circuits and Waveforms

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

L

C

R

PULSE

GEN

G

DUT

G

E

Figure 17. Inductive Switching Test Circuit

V

CE

L

TO OBTAIN

VARY t

P

REQUIRED PEAK I

V

GS

t

0V

P

AS

R

G

DUT

I

AS

0.01Ω

V

CE

R

or

LOAD

L

C

5V

RG = 1KΩ

G

DUT

+

V

CE

-

E

Figure 18. t

+

V

DD

-

0

ON

and t

I

AS

Switching Test Circuit

OFF

BV

CES

t

P

t

AV

V

CE

V

DD

Figure 19. Energy Test Circuit Figure 20. Energy Waveforms

©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

SPICE Thermal Model

REV 1 May 2002
ISL9V5036S3S / ISL9V3536P3 / ISL9V5036S3
CTHERM1 th 6 4.0e2

CTHERM2 6 5 3.6e-3
CTHERM3 5 4 4.9e-2
CTHERM4 4 3 3.2e-1
CTHERM5 3 2 3.0e-1
CTHERM6 2 tl 1.6e-2

RTHERM1 th 6 1.0e-2
RTHERM2 6 5 1.4e-1
RTHERM3 5 4 1.0e-1
RTHERM4 4 3 9.0e-2
RTHERM5 3 2 9.4e-2
RTHERM6 2 tl 1.9e-2

SABER Thermal Model

SABER thermal model
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 t h 6 = 4.0e2
ctherm.ctherm2 6 5 = 3.6e-3
ctherm.ctherm3 5 4 = 4.9e-2
ctherm.ctherm4 4 3 = 3.2e-1
ctherm.ctherm5 3 2 = 3.0e-1
ctherm.ctherm6 2 tl = 1.6e-2

rtherm.rtherm1 th 6 = 1.0e-2
rtherm.rtherm2 6 5 = 1.4e-1
rtherm.rtherm3 5 4 = 1.0e-1
rtherm.rtherm4 4 3 = 9.0e-2
rtherm.rtherm5 3 2 = 9.4e-2
rtherm.rtherm6 2 tl = 1.9e-2
}

RTHERM1

RTHERM2

RTHERM3

RTHERM4

RTHERM5

JUNCTION

th

CTHERM1

6

CTHERM2

5

CTHERM3

4

CTHERM4

3

CTHERM5

2

RTHERM6

tl

©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

CTHERM6

CASE

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I1