ISL9K8120P3
8A, 1200V Stealt h™ Dual Diode
ISL9K8120P3
May 2002
General Description
The ISL9K8120P3 is a Stealth™ dual diode optimized for low
loss performance i n high frequency hard s witched applica tions.
The Stealth™ family exhibits low reverse recovery current
(I
operating co nditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The lo w I
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49413
) and exceptionally soft recovery under typical
RM(REC)
and short ta phase reduce loss
RM(REC)
.
Features
• Soft Recover y . . . . . . . . . . . . . . . . . . . . . . . .tb / ta > 5.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package Symbol
JEDEC TO-220AB
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
K
< 32ns
rr
o
C
A
Device Maximum Ratings (per leg) T
= 25°C unless otherwise noted
C
A
1
Symbol Parameter Ratings Units
V
RRM
V
RWM
V
I
F(AV)
I
FRM
I
FSM
P
E
AVL
, T
T
J
T
T
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
Repetitive Peak Reverse Voltage 1200 V
Working Peak Reverse Voltage 1200 V
DC Blocking Voltage 1200 V
R
Average Rectified Forw ard Current (TC = 105oC)
Total Device Current (Both Legs)
Repetitive Peak Surge Current (20kHz Square Wave) 16 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A
Power Dissipation 71 W
D
Avalanche Energy (1A, 40mH) 20 mJ
Operating and Storage Temperature Range -55 to 150 °C
STG
Maximum Temperature for Soldering
L
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
8
16
300
260
2
A
A
°C
°C
ISL9K8120P3 Rev. A
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
K8120P3 ISL9K8120P3 TO-220AB N/A 50
ISL9K8120P3
Electrical Characteristics (per leg)
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
I
Instantaneous Reverse Current VR = 1200V TC = 25°C - - 100 µA
R
T
= 125°C--1.0mA
C
On State Characteristics
V
Instantaneous Forward Voltage IF = 8A TC = 25°C-2.83.3V
F
= 125°C-2.73.1V
T
C
Dynamic Characteristics
C
Junction Capacitance VR = 10V, IF = 0A - 30 - pF
J
Switching Characteristics
t
Reverse Recovery Time IF = 1A, dIF/dt = 100A/µs, VR = 30V - 25 32 ns
rr
Reverse Recovery Time IF = 8A,
t
rr
I
RM(REC)
Q
Maximum Reverse Recovery Current - 4.3 - A
Reverse Recovered Charge - 525 - nC
RR
t
Reverse Recovery Time IF = 8A,
rr
S Softness Factor (t
I
RM(REC)
Q
Maximum Reverse Recovery Current - 5.5 - A
Reverse Recovered Charge - 1.1 - µC
RR
Reverse Recovery Time IF = 8A,
t
rr
S Softness Factor (t
I
RM(REC)
Q
dI
Maximum Reverse Recovery Current - 11 - A
Reverse Recovered Charge - 1.2 - µC
RR
/dt Maximum di/dt during t
M
)-9--
b/ta
)-5.5--
b/ta
b
= 8A, dIF/dt = 100A/µs, VR = 30V - 35 44 ns
I
F
- 300 - ns
/dt = 200A/µs,
dI
F
V
= 780V, TC = 25°C
R
- 375 - ns
/dt = 200A/µs,
dI
F
V
= 780V,
R
= 125°C
T
C
- 200 - ns
/dt = 1000A/µs,
dI
F
V
= 780V,
R
= 125°C
T
C
- 310 - A/µs
Thermal Characteristics
R
R
©2002 Fairchild Semiconductor Corporation ISL9K8120P3 Rev. A
Thermal Resistance Junction to Case TO-220 - - 1.75 °C/W
θJC
Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
θJA
Typical Performance Curves (per leg)
ISL9K8120P3
20
18
16
14
12
10
8
6
, FORWARD CURRENT (A)
F
I
4
2
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
150oC
125oC
25oC
, FORWARD VOLTAGE (V)
F
4.50
1000
100
10
1
, REVERSE CURRENT (µA)
R
I
0.1
0.01
200 300 400 500 600 700 800 900 1000 1100 1200
V
150oC
125oC
o
100
C
75oC
25oC
, REVERSE VOLTAGE (V)
R
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
500
VR = 780V, TC = 125oC
tb AT d IF/dt = 200A/µs, 500A/µs, 800A/µs
450
400
350
300
250
200
150
t, RECOVERY TIMES (ns)
100
50
0
02468 12 16
Figure 3. t
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
I
, FORWARD CURRENT (A)
F
and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt
a
10 14
500
450
400
350
300
250
200
150
t, RECOVERY TIMES (ns)
100
ta AT IF = 16A, 8A, 4A
50
0
200 300 400 500 600 700 800 900 1000
/dt, CURRENT RATE OF CHANGE (A/µs)
dI
F
VR = 780V, TC = 125oC
tb AT IF = 16A, 8A, 4A
14
VR = 780V, TC = 125oC
13
12
11
10
9
8
7
6
, MAX REVERSE RECOVERY CURRENT (A)
5
RM(REC)
4
I
0246 10 1416
I
, FORWARD CURRENT (A)
F
812
dIF/dt = 800A/µs
dIF/dt = 600A/µs
dIF/dt = 200A/µs
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
©2002 Fairchild Semiconductor Corporation ISL9K8120P3 Rev. A
16
VR = 780V, TC = 125oC
14
12
10
8
6
, MAX REVERSE RECOVERY CURRENT (A)
RM(REC)
4
I
100 200 300 400 700 800 900 1000
dI
/dt, CURRENT RATE OF CHANGE (A/µs)
F
500 600
IF = 16A
IF = 8A
IF = 4A
Figure 6. Maximum Reverse Recovery Current vs
dI
/dt
F
Typical Performance Curves (per leg) (Continued)
ISL9K8120P3
12
11
10
9
8
7
6
5
4
3
S, REVERSE RECOVERY SOFTNESS FACTOR
2
100 200 300 400 500 600 700 800 1000
IF = 16A
IF = 4A
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
VR = 780V, TC = 125oC
IF = 8A
900
Figure 7. Reverse Recovery Softness Factor vs
dI
/dt
F
500
400
300
200
, JUNCTION CAPACITANCE (pF)
J
100
C
f = 1MHZ
2000
VR = 780V, TC = 125oC
1800
1600
1400
1200
1000
800
, REVERSE RECOVERED CHARGE (nC)
600
RR
Q
400
100 200 400 500 600 700 800 900 1000
300
dI
/dt, CURRENT RATE OF CHANGE (A/µs)
F
IF = 16A
IF = 8A
IF = 4A
Figure 8. Reve rse Recove red Charge vs dI
-4.4
-4.8
-5.2
-5.6
, MAX REVERSE RECOVERY CURRENT (A)
IF = 8A, VR = 780V, dIF/dt = 200A/µs
I
RM(REC)
t
RR
F
500
400
350
450
/dt
, RECOVERY TIMES (ns)
RR
t
RM(REC)
0
0.1
0.03 101
, REVERSE VOLTAGE (V)
V
R
Figure 9. Junction Capacitance vs Reverse
Voltage
8
6
4
2
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
100 110 13090 150120
, CASE TEMPERATURE (oC)
T
C
100
I
-6.0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
300
Figure 10. Reverse Recovery Current and Times
vs Case Temperature
140
Figure 11. DC Current Derating Curve
©2002 Fairchild Semiconductor Corporation ISL9K8120P3 Rev. A
Typical Performance Curves (per leg) (Continued)
DUTY CYCLE - DESCENDING ORDER
0.5
1.0
0.2
0.1
0.05
0.02
0.01
ISL9K8120P3
P
DM
0.1
, NORMALIZED
θJA
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-5
10
-4
10
Figure 12. Normalized Maximum Transient Thermal Impedance
Test Circuit and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
CONTROL I
t
1 AND t2
V
GE
t
1
F
t
2
RG
L
DUT
MOSFET
CURRENT
SENSE
-3
10
-2
10
t, RECTANGULAR PULSE DURATION (s)
I
F
+
V
DD
-
0
t
1
t
θJA
2
1/t2
x R
+ T
θJA
A
0
t
b
0.25 I
I
RM
1
10
RM
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
dI
F
dt
10
t
rr
t
a
Figure 13. Itrr Test Circuit
I = 1A
L = 40mH
R < 0.1Ω
V
= 50V
DD
E
AVL
Q
= IGBT (BV
1
= 1/2LI2 [V
R(AVL)
CES
/(V
> DUT V
R(AVL)
Q
1
R(AVL)
- VDD)]
)
CURRENT
SENSE
DUT
LR
Figure 15. Avalanche Energy Test Circuit
Figure 14. t
+
V
DD
V
DD
IV
-
t
0
Figure 16. Avalanche Current and Voltage
Waveforms and Definitions
rr
V
AVL
I
L
I
L
t
1
t
2
t
Waveforms
©2002 Fairchild Semiconductor Corporation ISL9K8120P3 Rev. A
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not intended to be an exhaustive list of all such trademarks.
ACEx
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CROSSVOL T
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DOME
EcoSPARK
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EnSigna
TM
TM
FACT
FACT Quiet Series
STAR*POWER is used under license
FAST
FASTr
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HiSeC
2
I
C
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
OPTOLOGIC
â
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
â
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER
SMART START
SPM
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
ââ
UHC
UltraFET
VCX
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
â
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5
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